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F3L75R07W2E3B11BOMA1
IGBT Module, EasyPACK 2B, Three level Inverter, 75 A, 1.45 V, 250 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:250W; Collector Emitt; Available until stocks are exhausted
- SVHC: No SVHC (23-Jan-2024)
- Product Range: -
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 250W
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 75A
- Power Dissipation Pd: 250W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 75A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.45V
- Collector Emitter Saturation Voltage Vce(on): 1.45V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 22.12 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-模块 IGBT-modules
## F3L75R07W2E3_B11
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o J y<br>**----- End of picture text -----**<br>
VCES = 650V IC nom = 75A / ICRM = 150A
**典型应用** • 三电平应用 • 太阳能应用 • UPS系统
- 3-Level-Applications
-
-
**电气特性**
- 增加阻断电压至650V
- • 低电感设计 • 低开关损耗 • 1. V CEsat
-
-
-
- CEsat
## **机械特性**
- (RAR =Sib—a ( Al 2O3
- • 紧凑型设计
-
- 集成的安装夹使安装坚固
- Al2O3
-
-
• Rugged mounting due to integrated mounting clamps
1
IGBT-模块 IGBT-modules F3L75R07W2E3_B11
## 技术信息�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **初步数据 Preliminary�Data**
## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values**
|技术信息/TechnicalInformation<br>F3L75R07W2E3_B11<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-11-05<br>revision:2.1<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 75°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>75<br>95<br>A<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>150<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>250<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 1,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>4,60<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,145<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 5,1Ω<br>td on<br>0,025<br>0,025<br>0,025<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 5,1Ω<br>tr<br>0,02<br>0,023<br>0,024<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>td off<br>0,20<br>0,225<br>0,23<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 75 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 5,1Ω<br>tf<br>0,085<br>0,12<br>0,14<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 75 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 3100 A/µs (Tvj= 150°C)<br>RGon= 5,1Ω<br>Eon<br>0,45<br>0,60<br>0,70<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 75 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 5,1Ω<br>Eoff<br>1,70<br>2,30<br>2,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>530<br>380<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,55<br>0,60<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,55<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
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IGBT-模块 IGBT-modules F3L75R07W2E3_B11
## 技术信息�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **初步数据 Preliminary�Data**
## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values**
|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|75|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|490<br>460|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 75 A, - diF/dt = 3600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||95,0<br>105<br>110||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 75 A, - diF/dt = 3600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||3,70<br>6,40<br>7,00||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 75 A, - diF/dt = 3600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,90<br>1,50<br>1,75||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||0,70|0,80|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,70||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
date�of�publication:�2013-11-05 revision:�2.1
prepared�by:�DK approved�by:�MB
3
IGBT-模块 IGBT-modules F3L75R07W2E3_B11
## 技术信息�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **初步数据 Preliminary�Data**
## **二极管,�D5-D6�/�Diode,�D5-D6**
## **最大额定值�/�Maximum�Rated�Values**
|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|75|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1500<br>1400|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,45<br>1,35<br>1,30|1,85|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 75 A, - diF/dt = 3100 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||82,0<br>100<br>105||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 75 A, - diF/dt = 3100 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||3,70<br>7,00<br>8,00||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 75 A, - diF/dt = 3100 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,00<br>1,80<br>2,05||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC||0,60|0,65|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,50||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **负温度系数热敏电阻�/�NTC-Thermistor**
## **特征值�/�Characteristic�Values**
|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||
prepared�by:�DK date�of�publication:�2013-11-05 approved�by:�MB revision:�2.1
4
## 技术信息�/�Technical�Information
## IGBT-模块 IGBT-modules F3L75R07W2E3_B11
**==> picture [86 x 38] intentionally omitted <==**
## **初步数据 Preliminary�Data**
## **模块�/�Module**
|**模块/Module**|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|内部绝缘<br>Internalisolation|基本绝缘(class1,IEC61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|爬电距离<br>Creepagedistance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||11,5<br>6,3|||mm|
|电气间隙<br>Clearance|端子-散热片/terminaltoheatsink<br>端子-端子/terminaltoterminal||10,0<br>5,0|||mm|
|相对电痕指数<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|杂散电感,模块<br>Strayinductancemodule||LsCE||15||nH|
|模块引线电阻,端子-芯片<br>Moduleleadresistance,terminals-chip|TC=25°C,每个开关/perswitch|RCC'+EE'||2,00||mΩ|
|储存温度<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|重量<br>Weight||G||39||g|
Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt The current under continuous operation is limited to 25 A rms per connector pin
prepared�by:�DK approved�by:�MB
date�of�publication:�2013-11-05 revision:�2.1
5
## IGBT-模块 IGBT-modules
## F3L75R07W2E3_B11
## **初步数据**
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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>150 SS | , 150 es | /<br>Tvj = 25°C VGE = 19V<br>135 Tvj = 125°C 135 VGE = 17V<br>E Tvj = 150°C OE P VGE = 15V oe<br>VGE = 13V<br>120 [TT ,_ |i 120 VGE = 11V [}<br>Pao e y | eee aT |<br>VGE = 9V<br>PE Ae Jd<br>105 105<br>90 Se /|eef 90 e See/<br>; /<br>ie /<br>75 75<br>vs i<br>60 BEREREE?Fonte 60 (eeie e<br>45 PEPE 45<br>30 30<br>SERRE) eT TEE La R e<br>A AnRRR ee )Ae<br>15 15<br>A pi LTTET ay,AREEEEEE<br>0 0<br>b eyl ET } LT<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feaistt IGBT, Ses (AD) FFHIR IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =51 Ω ,R Goff =5.1 Ω ,V CE =300V<br>150 5,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>135 Tvj = 125°C 4,5 Eoff, Tvj = 125°C<br>F Tvj = 150°C F || Eon, Tvj = 150°C Litt ty<br>Eoff, Tvj = 150°C<br>120 4,0<br>et Ee f eo<br>/ f A)<br>/ f ] an<br>105 3,5<br>ee<br>90 3,0<br>75 2,5<br>Pt |pe Eee<br>ee ae 4? eee<br>60 2,0<br>if A400<br>45 1,5<br>eee<br>30 1,0<br>AeeVane?eT<br>15 0,5<br>pe ee<br>0 0,0<br>5 6 7 8 9 10 11 12 0 15 30 45 60 75 90 105 120 135 150<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
6
## IGBT-模块 IGBT-modules F3L75R07W2E3_B11
## **初步数据**
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**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =75A,V CE =300V<br>10 10<br>Eon, Tvj = 125°C ZthJH : IGBT<br>HH— EE HH} tH<br>9 mH Eoff, Tvj = 125°C J ill i i 4 ooo ToS or TT I TTETTTT]<br>EEonoff, T, Tvjvj = 150°C = 150°C a ell<br>8 Efe re<br>7<br>oa ) 1 Ee<br>6 Pt} | | | Lae td | pa<br>5 PT] | |LAT]ZL E E<br>Ls ) Pact<br>4 Pt | | ATlh Tt fd PTACeee ee<br>0,1<br>3 PPL : et ==Lee)a Llctfaie dee<br>2 | Labeese eT | | | | | taee ee e e e ee e e |<br>i: 1 2 3 4<br>1 eeera ee e el e r τ ii[K/W]: [s]: l 0,051 0,0005 e 0,117 0,005 0,426 0,05 0,506 0,2<br>PPE IE oo l<br>0 0,01<br>0 5 10 15 20 25 30 35 40 45 50 55 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RRSER IGBT, #22 ( RBSOA ) EARS MES ( HB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE SVR Goff =5.1 Ω ,T vj =150°C<br>165 150<br>IC, Modul Tvj = 25°C<br>150 I C , Chip 135 Tvj = 125°C<br>es e Tvj = 150°C e<br>135<br>120<br>120<br>F R EES) P R E ECE<br>105<br>105<br>90<br>90<br>75<br>75<br>60<br>pp fe CORP<br>60<br>45<br>| fe 4<br>45 Pt | LEE AE<br>30<br>30<br>aaa po Af<br>15 15<br>HEE SEE Cee CCE<br>0 0<br>0 100 200 300 400 500 600 700 800 0,0 0,4 0,8 1,2 1,6 2,0 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
7
IGBT-模块 IGBT-modules
## F3L75R07W2E3_B11
## **初步数据**
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Erec =f(I F) Erec =f(R G)<br>RGon ay Ω ,V CE =300V IF 7h y CE = 300 V<br>4,0 3,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>3,5 a ee<br>2,5<br>3,0<br>2,0<br>2,5<br>2,0 1,5<br>po ps ERUERRRUEEE<br>1,5<br>1,0<br>1,0 Lec |p aS<br>0,5<br>0,5<br>0,0 0,0<br>0 15 30 45 60 75 90 105 120 135 150 0 5 10 15 20 25 30 35 40 45 50 55<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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ZthJH =f (t) IF =f(V F)<br>10 150<br>H ZthJH : Diode S eo Tvj = 25°C<br>1(ttt eeI cetteTToo 135 mM Tvj = 125°C 1 . 1] 1 i]<br>Tvj = 150°C<br>C e C A Eb<br>a a 120 [TT i<br>e l 105 PT TT | |] | aed<br>LTA ELM ETL LEI TA<br>90<br>1 Se im = 75 CE ec<br>Yr P t| TTTTTT H 60 P| fd) | leea / yy |<br>ZAI Yi 45 Po) tf tL iARAL Ff<br>a a Il Sean aaa<br>30<br>i: 1 2 3 4<br>G r τ ii[K/W]: [s]: e 0,097 0,0005 0,219 0,005 0,576 0,05 0,508 0,2 ee 15 ee<br>0,1 (ll eso l) 0 Co ee @ocece<br>0,001 0,01 0,1 1 10 0,0 0,4 0,8 1,2 1,6 2,0<br>t [s] VF [V]<br> [K/W]thJH [A]IF<br>Z<br>**----- End of picture text -----**<br>
8
IGBT-模块 IGBT-modules
## F3L75R07W2E3_B11
## **初步数据**
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Erec =f(I F) Erec =f(R G)<br>RGon ay Ω ,V CE =300V IF 76K CE = 300 V<br>4,0 3,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C 2,7 Erec, Tvj = 150°C<br>3,5 ee ee ee<br>2,4<br>3,0<br>2,1<br>2,5 SP eee eee<br>Li eh 1,8<br>2,0 1,5<br>PyTPP]A 1,2 ENGRNRE<br>1,5<br>0,9<br>1,0 TITa TTT FT] OLENASs<br>PP<br>0,6<br>PZaGRaaae PLPete<br>0,5<br>0,3<br>MESEEReee CEE RRF E E<br>0,0 0,0<br>0 15 30 45 60 75 90 105 120 135 150 0 5 10 15 20 25 30 35 40 45 50 55<br>IF [A] RG [ Ω ]<br>transientRAABinthermal—iB,impedanceD5-D6 Diode, D5-D6 RBEABARNTC-Thermistor-temperatureBH BER characteristic (typical)<br>ZthJH =f (t) R=f(T)<br>10 100000<br>ZthJH : Diode Rtyp<br>{— et [I ———<br>Re pe<br>PT a TT TTT TTT a e eee ee<br>PT TUT TENE ETEll a e ee e e<br>1 SR 10000<br>e e NT<br>Pt ett a<br>pT TTT eT TT ES NN se ee<br>PTa TT TTT TTT TTT a Ne a eeee<br>a PN<br>SD a te Pal 2 ee eee<br>0,1 acu TUTN 1000 EN<br>PE tH a<br>a a a<br>PT TTT ETT NS<br>P| PT [TT] TTT TTT aa eeeeeeee<br>i: 1 2 3 4<br>ri[K/W]: 0,062 0,145 0,444 0,449<br>PT T τ i[s]: 0,0005 0,005 T 0,05 0,2 ee<br>ME mom df|<br>0,01 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>
9
## 技术信息�/�Technical�Information
IGBT-模块 IGBT-modules F3L75R07W2E3_B11
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接线图�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>
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## **初步数据 Preliminary�Data**
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## **封装尺寸�/�package�outlines**
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Infineon<br>**----- End of picture text -----**<br>
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prepared�by:�DK date�of�publication:�2013-11-05 approved�by:�MB revision:�2.1
10
IGBT-模块 IGBT-modules
## F3L75R07W2E3_B11
## **初步数据**
## **使用条件和条款**
使用条件和条款
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Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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