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F3L600R10W4S7FC22BPSA1
IGBT Module, Three level Inverter, 600 A, 1.63 V, 150 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK Series
- IGBT Technology: IGBT7 [Trench Stop]
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Screw
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Continuous Collector Current: 600A
- Collector Emitter Voltage Max: 950V
- Collector Emitter Saturation Voltage: 1.63V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 196.39 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**F3L600R10W4S7F_C22 EasyPACK[™] module** ee ## **EasyPACK[™] module with TRENCHSTOP[™] IGBT7 and CoolSiC[™] Schottky diode and PressFIT / NTC** ## **Features** - Electrical features - VCES = 950 V - IC nom = 600 A / ICRM = 800 A - CoolSiC[TM] Schottky diode gen 5 - TRENCHSTOP[TM] IGBT7 - T = 150°C vj,op - Mechanical features - Package with CTI > 400 - PressFIT contact technology - Integrated NTC temperature sensor ## **Potential applications** - Solar applications - Three-level applications ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2022-05-06 **F3L600R10W4S7F_C22 EasyPACK[™] module** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, T1 / T4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**3**|**IGBT, T2 / T3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**IGBT, T5 / T6**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**5**|**Diode, D1 / D4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8| |**6**|**Diode, D2 / D3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9| |**7**|**Diode, D5 / D6**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9| |**8**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10| |**9**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |**10**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24| |**11**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25| |**12**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28| Datasheet Revision 1.00 2022-05-06 2 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** ## **Insulation coordination** |||||| |---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|3.2|kV| |Internal isolation||basic insulation (class 1, IEC 61140)|Al2O3|| |Creepage distance|_d_Creep|terminal to heatsink|11.0|mm| |Clearance|_d_Clear|terminal to heatsink|9.2|mm| |Comparative tracking<br>index|_CTI_||> 400|| |Relative thermal index<br>(electrical)|_RTI_|housing|140|°C| |**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||20||nH| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TH=25°C, per switch|||1.8||mΩ| |Storage temperature|_T_stg|||-40||125|°C| |Terminal connection<br>torque|_M_|- Mounting according to<br>valid application note|M5, Screw|1.3||1.5|Nm| |Weight|_G_||||112||g| _Note: The current under continuous operation is limited to 25A rms per connector pin._ ## **2 IGBT, T1 / T4** **Table 3 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|950|V| |Implemented collector<br>current|_I_CN|||600|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|310|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||800|A| |Gate-emitter peak voltage|_V_GES|||±20|V| Datasheet Revision 1.00 2022-05-06 3 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, T1 / T4** |**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 400 A,_V_GE= 15 V|_T_vj= 25 °C||1.63|1.89|V| ||||_T_vj= 125 °C||1.79||| ||||_T_vj= 150 °C||1.82||| |Gate threshold voltage|_V_GEth|_I_C= 9.25 mA, VCE= VGE,_T_vj= 25 °C||4.35|5.10|5.85|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 600 V|||1.35||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0.5||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||37.9||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.117||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 950 V,_V_GE= 0 V|_T_vj= 25 °C|||0.1|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 400 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gon= 5 Ω|_T_vj= 25 °C||0.145||µs| ||||_T_vj= 125 °C||0.145||| ||||_T_vj= 150 °C||0.145||| |Rise time (inductive load)|_t_r|_I_C= 400 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gon= 5 Ω|_T_vj= 25 °C||0.068||µs| ||||_T_vj= 125 °C||0.068||| ||||_T_vj= 150 °C||0.068||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 400 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gof= 18 Ω|_T_vj= 25 °C||0.914||µs| ||||_T_vj= 125 °C||0.967||| ||||_T_vj= 150 °C||0.991||| |Fall time (inductive load)|_t_f|_I_C= 400 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gof= 18 Ω|_T_vj= 25 °C||0.054||µs| ||||_T_vj= 125 °C||0.059||| ||||_T_vj= 150 °C||0.061||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 400 A,_V_CE= 500 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 5 Ω, di/dt = 4800<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||19.3||mJ| ||||_T_vj= 125 °C||19.3||| ||||_T_vj= 150 °C||19.3||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 400 A,_V_CE= 500 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 18 Ω, dv/dt = 3200<br>V/µs (Tvj= 150 °C)|_T_vj= 25 °C||22.8||mJ| ||||_T_vj= 125 °C||24.5||| ||||_T_vj= 150 °C||25.4||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT,_λ_grease= 3.3 W/(m·K)|||0.182||K/W| **(table continues...)** Datasheet Revision 1.00 2022-05-06 4 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **3 IGBT, T2 / T3** |**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Temperature under<br>switching conditions|_T_vj op||-40||150|°C| ## **3 IGBT, T2 / T3** |**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|950|V| |Implemented collector<br>current|_I_CN|||400|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|320|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||800|A| |Gate-emitter peak voltage|_V_GES|||±20|V| ## **Table 6 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 400 A,_V_GE= 15 V|_T_vj= 25 °C||1.30|1.40|V| ||||_T_vj= 125 °C||1.35||| ||||_T_vj= 150 °C||1.35||| |Gate threshold voltage|_V_GEth|_I_C= 6.5 mA, VCE= 20 V,_T_vj|= 25 °C|4.15|4.90|5.65|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 600 V|||4.1||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0.75||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||49.2||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.228||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 950 V,_V_GE= 0 V|_T_vj= 25 °C|||0.1|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 400 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gon= 12 Ω|_T_vj= 25 °C||0.445||µs| ||||_T_vj= 125 °C||0.409||| ||||_T_vj= 150 °C||0.400||| ## **(table continues...)** Datasheet Revision 1.00 2022-05-06 5 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **4 IGBT, T5 / T6** |**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Rise time (inductive load)|_t_r|_I_C= 400 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gon= 12 Ω|_T_vj= 25 °C||0.099||µs| ||||_T_vj= 125 °C||0.113||| ||||_T_vj= 150 °C||0.117||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 400 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gof= 27 Ω|_T_vj= 25 °C||2.293||µs| ||||_T_vj= 125 °C||2.409||| ||||_T_vj= 150 °C||2.439||| |Fall time (inductive load)|_t_f|_I_C= 400 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gof= 27 Ω|_T_vj= 25 °C||0.203||µs| ||||_T_vj= 125 °C||0.396||| ||||_T_vj= 150 °C||0.452||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 400 A,_V_CE= 500 V,<br>_L_σ= 64 nH,_V_GE= ±15 V,<br>_R_Gon= 12 Ω, di/dt = 2700<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||13.9||mJ| ||||_T_vj= 125 °C||14.5||| ||||_T_vj= 150 °C||14.9||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 400 A,_V_CE= 500 V,<br>_L_σ= 64 nH,_V_GE= ±15 V,<br>_R_Gof= 27 Ω, dv/dt = 2060<br>V/µs (Tvj= 150 °C)|_T_vj= 25 °C||60.6||mJ| ||||_T_vj= 125 °C||74.3||| ||||_T_vj= 150 °C||78.1||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT,_λ_grease= 3.3 W/(m·K)|||0.254||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **4 IGBT, T5 / T6** |**4**<br>**IGBT, T5 / T6**|**4**<br>**IGBT, T5 / T6**|**4**<br>**IGBT, T5 / T6**|**4**<br>**IGBT, T5 / T6**|**4**<br>**IGBT, T5 / T6**|**4**<br>**IGBT, T5 / T6**| |---|---|---|---|---|---| |**Table 7**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|950|V| |Implemented collector<br>current|_I_CN|||400|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|200|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||800|A| |Gate-emitter peak voltage|_V_GES|||±20|V| Datasheet Revision 1.00 2022-05-06 6 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **4 IGBT, T5 / T6** |**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 400 A,_V_GE= 15 V|_T_vj= 25 °C||1.85|2.25|V| ||||_T_vj= 125 °C||2.10||| ||||_T_vj= 150 °C||2.15||| |Gate threshold voltage|_V_GEth|_I_C= 6.5 mA, VCE= VGE,_T_vj|= 25 °C|4.35|5.10|5.85|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 600 V|||0.9||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0.75||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||25.2||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.078||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 950 V,_V_GE= 0 V|_T_vj= 25 °C|||1|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 400 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gon= 8 Ω|_T_vj= 25 °C||0.167||µs| ||||_T_vj= 125 °C||0.169||| ||||_T_vj= 150 °C||0.170||| |Rise time (inductive load)|_t_r|_I_C= 400 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gon= 8 Ω|_T_vj= 25 °C||0.096||µs| ||||_T_vj= 125 °C||0.102||| ||||_T_vj= 150 °C||0.104||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 400 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gof= 27 Ω|_T_vj= 25 °C||0.862||µs| ||||_T_vj= 125 °C||0.919||| ||||_T_vj= 150 °C||0.940||| |Fall time (inductive load)|_t_f|_I_C= 400 A,_V_CE= 500 V,<br>_V_GE= ±15 V,_R_Gof= 27 Ω|_T_vj= 25 °C||0.054||µs| ||||_T_vj= 125 °C||0.058||| ||||_T_vj= 150 °C||0.060||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 400 A,_V_CE= 500 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 8 Ω, di/dt = 3100<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||40.8||mJ| ||||_T_vj= 125 °C||38||| ||||_T_vj= 150 °C||37.8||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 400 A,_V_CE= 500 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 27 Ω, dv/dt = 3050<br>V/µs (Tvj= 150 °C)|_T_vj= 25 °C||25.2||mJ| ||||_T_vj= 125 °C||28||| ||||_T_vj= 150 °C||29.1||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT,_λ_grease= 3.3 W/(m·K)|||0.281||K/W| **(table continues...)** Datasheet Revision 1.00 2022-05-06 7 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Diode, D1 / D4** |**Table 8**<br>**(continued) Characteristic values**|**Table 8**<br>**(continued) Characteristic values**|**Table 8**<br>**(continued) Characteristic values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Temperature under<br>switching conditions|_T_vj op||-40||150|°C| ## **5 Diode, D1 / D4** |**5**<br>**Diode, D1 / D4**|**5**<br>**Diode, D1 / D4**|**5**<br>**Diode, D1 / D4**|||| |---|---|---|---|---|---| |**Table 9**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|950|V| |Continuous DC forward<br>current|_I_F|||300|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||600|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|3100|A²s| ||||_T_vj= 150 °C|2900|| **Table 10 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 300 A,_V_GE= 0 V|_T_vj= 25 °C||2.60|2.90|V| ||||_T_vj= 125 °C||2.40||| ||||_T_vj= 150 °C||2.35||| |Peak reverse recovery<br>current|_I_RM|_V_R= 500 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>3000 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||102||A| ||||_T_vj= 125 °C||147||| ||||_T_vj= 150 °C||163||| |Recovered charge|_Q_r|_V_R= 500 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>3000 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||11.3||µC| ||||_T_vj= 125 °C||20.3||| ||||_T_vj= 150 °C||24.1||| |Reverse recovery energy|_E_rec|_V_R= 500 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>3000 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||3.37||mJ| ||||_T_vj= 125 °C||5.93||| ||||_T_vj= 150 °C||7.06||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,_λ_grease= 3.3 W/(m·K)|||0.597||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| Datasheet Revision 1.00 2022-05-06 8 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Diode, D2 / D3** ## **6 Diode, D2 / D3** |**6**<br>**Diode, D2 / D3**|**6**<br>**Diode, D2 / D3**|**6**<br>**Diode, D2 / D3**|||| |---|---|---|---|---|---| |**Table 11**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|950|V| |Continuous DC forward<br>current|_I_F|||300|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||600|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|3100|A²s| ||||_T_vj= 150 °C|2900|| |**Table 12**<br>**Characteristic values**|**Table 12**<br>**Characteristic values**|**Table 12**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 300 A,_V_GE= 0 V|_T_vj= 25 °C||2.60|2.90|V| ||||_T_vj= 125 °C||2.40||| ||||_T_vj= 150 °C||2.35||| |Peak reverse recovery<br>current|_I_RM|_V_R= 500 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>2200 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||146||A| ||||_T_vj= 125 °C||194||| ||||_T_vj= 150 °C||207||| |Recovered charge|_Q_r|_V_R= 500 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>2200 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||8.45||µC| ||||_T_vj= 125 °C||17.9||| ||||_T_vj= 150 °C||21.3||| |Reverse recovery energy|_E_rec|_V_R= 500 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>2200 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||4.22||mJ| ||||_T_vj= 125 °C||8.19||| ||||_T_vj= 150 °C||9.6||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,_λ_grease= 3.3 W/(m·K)|||0.393||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **7 Diode, D5 / D6** |**7**<br>**Diode, D5 / D6**|**7**<br>**Diode, D5 / D6**|**7**<br>**Diode, D5 / D6**|**7**<br>**Diode, D5 / D6**|**7**<br>**Diode, D5 / D6**|**7**<br>**Diode, D5 / D6**| |---|---|---|---|---|---| |**Table 13**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |**(table continues...)**|||||| Datasheet Revision 1.00 2022-05-06 9 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 NTC-Thermistor** |**Table 13**<br>**(continued) Maximum rated values**|**Table 13**<br>**(continued) Maximum rated values**|**Table 13**<br>**(continued) Maximum rated values**|||| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Continuous DC forward<br>current|_I_F|||160|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||320|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|3050|A²s| ||||_T_vj= 150 °C|2780|| **Table 14 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 160 A,_V_GE= 0 V|_T_vj= 25 °C||1.45|1.75|V| ||||_T_vj= 125 °C||1.75||| ||||_T_vj= 150 °C||1.85||| |Peak reverse recovery<br>current|_I_RM|_V_R= 500 V,_I_F= 160 A,<br>_V_GE= -15 V, -diF/dt =<br>3500 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||71.4||A| ||||_T_vj= 125 °C||71.4||| ||||_T_vj= 150 °C||71.4||| |Recovered charge|_Q_r|_V_R= 500 V,_I_F= 160 A,<br>_V_GE= -15 V, -diF/dt =<br>3500 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||1.29||µC| ||||_T_vj= 125 °C||1.29||| ||||_T_vj= 150 °C||1.29||| |Reverse recovery energy|_E_rec|_V_R= 500 V,_I_F= 160 A,<br>_V_GE= -15 V, -diF/dt =<br>3500 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.66||mJ| ||||_T_vj= 125 °C||0.66||| ||||_T_vj= 150 °C||0.66||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,_λ_grease= 3.3 W/(m·K)|||0.430||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **8 NTC-Thermistor** |**8**<br>**NTC-Thermistor**|**8**<br>**NTC-Thermistor**|**8**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 15**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|_ΔR/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| **(table continues...)** Datasheet Revision 1.00 2022-05-06 10 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 NTC-Thermistor** |**Table 15**<br>**(continued) Characteristic values**|**Table 15**<br>**(continued) Characteristic values**|**Table 15**<br>**(continued) Characteristic values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _Note: Specification according to the valid application note._ Datasheet Revision 1.00 2022-05-06 11 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** ## **9 Characteristics diagrams** ## **Output characteristic (typical), IGBT, T1 / T4** IC = f(VCE) VGE = 15 V **Output characteristic field (typical), IGBT, T1 / T4** IC = f(VCE) T = 150 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 800 800<br>700 700<br>600 600<br>500 500<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 1.0 2.0 3.0 4.0<br>Transfer characteristic (typical), IGBT, T1 / T4 Switching losses (typical), IGBT, T1 / T4<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 18 Ω, RGon = 5 Ω, VCE = 500 V, VGE = -15 / 15 V<br>800 70<br>700<br>60<br>600<br>50<br>500<br>40<br>400<br>30<br>300<br>20<br>200<br>10<br>100<br>0 0<br>4.0 5.0 6.0 7.0 8.0 9.0 0 100 200 300 400 500 600 700 800<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-05-06 12 **F3L600R10W4S7F_C22 EasyPACK[™] module** **9 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Switching losses (typical), IGBT, T1 / T4** ## E = f(RG) IC = 400 A, VCE = 500 V, VGE = -15 / 15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 240<br>220<br>200<br>180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 20 40 60 80 100 120 140 160 180<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, T1 / T4** ## t = f(RG) ## **Switching times (typical), IGBT, T1 / T4** ## t = f(IC) RGoff = 18 Ω, RGon = 5 Ω, VGE = ±15 V, VCE = 500 V, Tvj = 150 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 100 200 300 400 500 600 700 800<br>**----- End of picture text -----**<br> **Transient thermal impedance , IGBT, T1 / T4** Zth = f(t) IC = 400 A, VCE = 500 V, VGE = -15 / 15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 20 40 60 80 100 120 140 160 180<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-05-06 13 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** **Reverse bias safe operating area (RBSOA), IGBT, T1 / Capacity characteristic (typical), IGBT, T1 / T4 T4** C = f(VCE) IC = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C RGoff = 18 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>900<br>800<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0 100 200 300 400 500 600 700 800 900 1000<br>**----- End of picture text -----**<br> **Gate charge characteristic (typical), IGBT, T1 / T4** VGE = f(QG) IC = 600 A, Tvj = 25 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0.1<br>0.01<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> **Output characteristic (typical), IGBT, T2 / T3** IC = f(VCE) VGE = 15 V **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 15 800<br>700<br>10<br>600<br>5<br>500<br>0 400<br>300<br>-5<br>200<br>-10<br>100<br>-15 0<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.0 0.5 1.0 1.5 2.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-05-06 14 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** **Output characteristic field (typical), IGBT, T2 / T3 Transfer characteristic (typical), IGBT, T2 / T3** IC = f(VCE) IC = f(VGE) T = 150 °C VCE = 20 V T = 150 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 800 800<br>700 700<br>600 600<br>500 500<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 4.0 5.0 6.0 7.0 8.0<br>Switching losses (typical), IGBT, T2 / T3 Switching losses (typical), IGBT, T2 / T3<br>E = f(IC) E = f(RG)<br>RGoff = 27 Ω, RGon = 12 Ω, VCE = 500 V, VGE = -15 / 15 V IC = 400 A, VCE = 500 V, VGE = -15 / 15 V<br>180 400<br>360<br>150<br>320<br>280<br>120<br>240<br>90 200<br>160<br>60<br>120<br>80<br>30<br>40<br>0 0<br>0 100 200 300 400 500 600 700 800 0 30 60 90 120 150 180 210 240 270<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-05-06 15 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** ## **Switching times (typical), IGBT, T2 / T3** t = f(IC) RGoff = 27 Ω, RGon = 12 Ω, VCE = 500 V, VGE = -15 / 15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1<br>0.01<br>0.001<br>0 100 200 300 400 500 600 700 800<br>**----- End of picture text -----**<br> **Transient thermal impedance , IGBT, T2 / T3** Zth = f(t) **Switching times (typical), IGBT, T2 / T3** t = f(RG) IC = 400 A, VCE = 500 V, VGE = -15 / 15 V, Tvj = 150 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1<br>0.01<br>0 30 60 90 120 150 180 210 240 270 300<br>**----- End of picture text -----**<br> **Reverse bias safe operating area (RBSOA), IGBT, T2 / T3** IC = f(VCE) RGoff = 27 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>900<br>800<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0 100 200 300 400 500 600 700 800 900 1000<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-05-06 16 **F3L600R10W4S7F_C22 EasyPACK[™] module** **9 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Capacity characteristic (typical), IGBT, T2 / T3** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0.1<br>0.01<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> **Output characteristic (typical), IGBT, T5 / T6** IC = f(VCE) VGE = 15 V ## **Gate charge characteristic (typical), IGBT, T2 / T3** VGE = f(QG) IC = 400 A, Tvj = 25 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>10<br>5<br>0<br>-5<br>-10<br>-15<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>**----- End of picture text -----**<br> **Output characteristic field (typical), IGBT, T5 / T6** IC = f(VCE) T = 150 °C vj **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 800 800<br>700 700<br>600 600<br>500 500<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-05-06 17 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** ## **Transfer characteristic (typical), IGBT, T5 / T6** IC = f(VGE) ## VCE = 20 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>500<br>400<br>300<br>200<br>100<br>0<br>4.0 5.0 6.0 7.0 8.0 9.0<br>**----- End of picture text -----**<br> ## **Switching losses (typical), IGBT, T5 / T6** ## E = f(RG) IC = 400 A, VCE = 500 V, VGE = -15 / 15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>270<br>240<br>210<br>180<br>150<br>120<br>90<br>60<br>30<br>0<br>0 30 60 90 120 150 180 210 240 270<br>**----- End of picture text -----**<br> ## **Switching losses (typical), IGBT, T5 / T6** ## E = f(IC) RGoff = 27 Ω, RGon = 8 Ω, VCE = 500 V, VGE = -15 / 15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 100 200 300 400 500 600 700 800<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, T5 / T6** ## t = f(IC) RGoff = 27 Ω, RGon = 8 Ω, VGE = ±15 V, VCE = 500 V, Tvj = 150 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 100 200 300 400 500 600 700 800<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-05-06 18 **F3L600R10W4S7F_C22 EasyPACK[™] module** **9 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** **Switching times (typical), IGBT, T5 / T6 Transient thermal impedance , IGBT, T5 / T6** t = f(RG) Zth = f(t) IC = 400 A, VCE = 500 V, Tvj = 150 °C, VGE = ±15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 30 60 90 120 150 180 210 240 270<br>**----- End of picture text -----**<br> ## **Reverse bias safe operating area (RBSOA), IGBT, T5 / T6** IC = f(VCE) RGoff = 27 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>900<br>800<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0 100 200 300 400 500 600 700 800 900 1000<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **Capacity characteristic (typical), IGBT, T5 / T6** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0.1<br>0.01<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-05-06 19 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** ## **Gate charge characteristic (typical), IGBT, T5 / T6** VGE = f(QG) IC = 400 A, Tvj = 25 °C **Forward characteristic (typical), Diode, D1 / D4** IF = f(VF) **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 15 600<br>10 500<br>5 400<br>0 300<br>-5 200<br>-10 100<br>-15 0<br>0.00 0.25 0.50 0.75 1.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>Switching losses (typical), Diode, D1 / D4 Switching losses (typical), Diode, D1 / D4<br>Erec = f(IF) Erec = f(RG)<br>RG = 8 Ω, VR = 500 V IF = 300 A, VR = 500 V<br>10 9<br>9 8<br>8<br>7<br>7<br>6<br>6<br>5<br>5<br>4<br>4<br>3<br>3<br>2<br>2<br>1 1<br>0 0<br>0 100 200 300 400 500 600 0 10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-05-06 20 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** **==> picture [540 x 607] intentionally omitted <==** **----- Start of picture text -----**<br> Transient thermal impedance, Diode, D1 / D4 Forward characteristic (typical), Diode, D2 / D3<br>Zth = f(t) IF = f(VF)<br>1 600<br>500<br>400<br>0.1 300<br>200<br>100<br>0.01 0<br>0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>Switching losses (typical), Diode, D2 / D3 Switching losses (typical), Diode, D2 / D3<br>Erec = f(IF) Erec = f(RG)<br>RG = 12 Ω, VR = 500 V IF = 300 A, VR = 500 V<br>16 12<br>14<br>10<br>12<br>8<br>10<br>8 6<br>6<br>4<br>4<br>2<br>2<br>0 0<br>0 100 200 300 400 500 600 0 10 20 30 40 50 60 70 80 90 100 110 120<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-05-06 21 **F3L600R10W4S7F_C22 EasyPACK[™] module** **9 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** **Transient thermal impedance, Diode, D2 / D3** Zth = f(t) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **Switching losses (typical), Diode, D5 / D6** Erec = f(IF) RG = 5 Ω, VR = 500 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 40 80 120 160 200 240 280 320<br>**----- End of picture text -----**<br> **==> picture [228 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> Forward characteristic (typical), Diode, D5 / D6<br>IF = f(VF)<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 320<br>280<br>240<br>200<br>160<br>120<br>80<br>40<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>**----- End of picture text -----**<br> **Switching losses (typical), Diode, D5 / D6** Erec = f(RG) IF = 160 A, VR = 500 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0.0<br>0 5 10 15 20 25 30 35 40 45 50<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-05-06 22 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** **==> picture [540 x 297] intentionally omitted <==** **----- Start of picture text -----**<br> Transient thermal impedance, Diode, D5 / D6 Temperature characteristic (typical), NTC-Thermistor<br>Zth = f(t) R = f(TNTC)<br>1 100000<br>10000<br>0.1<br>1000<br>0.01 100<br>0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-05-06 23 **F3L600R10W4S7F_C22 EasyPACK[™] module** **10 Circuit diagram** **==> picture [105 x 47] intentionally omitted <==** ## **10 Circuit diagram** **==> picture [363 x 427] intentionally omitted <==** **----- Start of picture text -----**<br> P<br>T1<br>G1<br>D1<br>HE1<br>HC5 HC2<br>X1<br>T5<br>T2<br>NTC �<br>G5 G2<br>D5 D2<br>X2<br>HE5 HE2<br>M1 AC<br>M2 X3<br>T6 T3 NTC �<br>G6 G3<br>D6 D3<br>X4<br>HE6 HE3<br>HC4<br>T4<br>G4<br>D4<br>HE4<br>N<br>W00173365.04<br>**----- End of picture text -----**<br> **Figure 1** Datasheet Revision 1.00 2022-05-06 24 **F3L600R10W4S7F_C22 EasyPACK[™] module** **11 Package outlines** **==> picture [105 x 47] intentionally omitted <==** ## **11 Package outlines** **==> picture [487 x 614] intentionally omitted <==** **----- Start of picture text -----**<br> dimensioned f�r EJOT Delta PT WN5451 25;<br>choose length according to PCB-thickness;<br>max. screw depth 8,5 mm<br>4x screws<br>26<br>14<br>0<br>14<br>26<br>(139,5) distance for threaded holes in heatsink<br>150 � 0,5<br>module labeling<br>recommended design height (1) mid of pressfit-zone<br>according to screw head<br>(26) N M2 M1 P<br>24 HC4 HE3<br>20,8 G3<br>17,6<br>X4 X3<br>11,2<br>HE5 G5 HE1 G1<br>4,8<br>0<br>4,8 HE4 G4 HC2<br>11,2<br>HE6 G6<br>14,4<br>17,6<br>G2 X2<br>20,8<br>HC4 HC5<br>24 X 1<br>(26) HE2<br>AC<br>- Details about hole specification for contacts refer to AN2009-01 chapter 2<br>- Copper thickness in hole 25~50um<br>4,2)<br>( �<br>3,4)<br>( �<br>dimensioned for M5 screw<br>0,5<br> �<br>62<br>67,5 64,5 0 64,5 67,5<br>0,1<br> � (12)<br>12,2 (16,4)<br>according to screw head washer<br>(64,5) 56,15 52,95 49,75 46,55 43,35 40,15 36,95 33,75 30,55 24,15 16 12,8 9,6 6,4 3,2 0 3,2 6,4 9,6 12,8 16 24,15 27,35 30,55 33,75 36,95 43,35 46,55 49,75 52,95 56,15 (64,5) W00192655.06<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 1.00 2022-05-06 25 **F3L600R10W4S7F_C22 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **12 Module label code** ## **12 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.00 2022-05-06 26 **F3L600R10W4S7F_C22 EasyPACK[™] module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2021-08-17|Target datasheet| |1.00|2022-05-06|Final datasheet| Datasheet Revision 1.00 2022-05-06 27 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2022-05-06 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2022 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-AAK433-002** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **Warnings** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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