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F3L600R10N3S7FBPSA1
IGBT Module, Three level Inverter, 335 A, 1.43 V, 20 mW, 175 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPACK Series
- IGBT Technology: IGBT7 [Trench Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 20mW
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Continuous Collector Current: 335A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.43V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 237.34 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**F3L600R10N3S7F EconoPACK[™] 3 module** ## **Final datasheet** ## **EconoPACK[™] 3 module with TRENCHSTOP[™] IGBT7 and emitter controlled 7 diode and NTC** ## **Features** - Electrical features - VCES = 950 V - IC nom = 600 A / ICRM = 600 A - Low switching losses - TRENCHSTOP[TM] IGBT7 - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder - Mechanical features - Compact design - Copper base plate - Integrated NTC temperature sensor - High power density ## **Potential applications** - Solar applications - Three-level applications ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** **==> picture [4 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2024-12-18 **F3L600R10N3S7F EconoPACK[™] 3 module** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, T1 / T4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**3**|**IGBT, T2 / T3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**Diode, D1 / D4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7| |**5**|**Diode, D2 / D3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8| |**6**|**Diode, D5 / D6**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8| |**7**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9| |**8**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |**9**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20| |**10**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21| |**11**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24| Datasheet Revision 1.00 2024-12-18 2 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||| |---|---|---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|||3.2|kV| |Isolation test voltage NTC|_V_ISOL(NTC)|RMS, f = 50 Hz,_t_= 1 min|||3.2|kV| |Material of module<br>baseplate|||||Cu|| |Internal isolation||basic insulation (class 1, IEC 61140)|||Al2O3|| |Creepage distance|_d_Creep nom|terminal to baseplate, nom.|||10.0|mm| |Creepage distance|_d_Creep min|terminal to baseplate, min.|||7.5|mm| |Comparative tracking<br>index|_CTI_||||> 200|| |Relative thermal index<br>(electrical)|_RTI_|housing|||140|°C| |Creepage distance<br>_d_Creep min terminal to baseplate, min.<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|Creepage distance<br>_d_Creep min terminal to baseplate, min.<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|Creepage distance<br>_d_Creep min terminal to baseplate, min.<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|Creepage distance<br>_d_Creep min terminal to baseplate, min.<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|7.5<br>mm<br>> 200<br>140<br>°C|7.5<br>mm<br>> 200<br>140<br>°C|7.5<br>mm<br>> 200<br>140<br>°C|7.5<br>mm<br>> 200<br>140<br>°C| |---|---|---|---|---|---|---|---| |**Table 2**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||20||nH| |Module lead resistance,<br>terminals - chip|_R_AA'+CC'|TC= 25 °C, per switch|||2||mΩ| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TC= 25 °C, per switch|||1.5||mΩ| |Storage temperature|_T_stg|||-40||125|°C| |Mounting torque for<br>module mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|3||6|Nm| |Weight|_G_||||300||g| _**Note** : The current under continuous operation is limited to 50A rms per connector pin_ ## **2** ## **IGBT, T1 / T4** **Table 3 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|950|V| |Implemented collector<br>current|_I_CN|||600|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_C= 115 °C|290|A| |**(table continues...)**|||||| Datasheet Revision 1.00 2024-12-18 3 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, T1 / T4** |**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||600|||A| |Gate-emitter peak voltage|_V_GES|||±20|||V| |**Table 4**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 250 A,_V_GE= 15 V|_T_vj= 25 °C||1.43|1.64|V| ||||_T_vj= 125 °C||1.53||| ||||_T_vj= 150 °C||1.55||| |Gate threshold voltage|_V_GEth|_I_C= 9.75 mA, VCE= VGE,_T_vj= 25 °C||4.35|5.1|5.85|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 600 V, Tvj= 25 °C|||1.35||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0.5||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||37.9||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.117||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 950 V,_V_GE= 0 V|_T_vj= 25 °C|||0.11|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 250 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gon= 1.8 Ω|_T_vj= 25 °C||0.059||µs| ||||_T_vj= 125 °C||0.070||| ||||_T_vj= 150 °C||0.070||| |Rise time (inductive load)|_t_r|_I_C= 250 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gon= 1.8 Ω|_T_vj= 25 °C||0.020||µs| ||||_T_vj= 125 °C||0.022||| ||||_T_vj= 150 °C||0.023||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 250 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gof= 0.75 Ω|_T_vj= 25 °C||0.190||µs| ||||_T_vj= 125 °C||0.240||| ||||_T_vj= 150 °C||0.250||| |Fall time (inductive load)|_t_f|_I_C= 250 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gof= 0.75 Ω|_T_vj= 25 °C||0.040||µs| ||||_T_vj= 125 °C||0.080||| ||||_T_vj= 150 °C||0.090||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 250 A,_V_CC= 500 V,<br>_L_σ= 15 nH,_V_GE= ±15 V,<br>_R_Gon= 1.8 Ω, di/dt = 8.8<br>kA/µs (Tvj= 150 °C)|_T_vj= 25 °C||3.1||mJ| ||||_T_vj= 125 °C||3.88||| ||||_T_vj= 150 °C||3.88||| ## **(table continues...)** Datasheet Revision 1.00 2024-12-18 4 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **3 IGBT, T2 / T3** |**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 250 A,_V_CC= 500 V,<br>_L_σ= 15 nH,_V_GE= ±15 V,<br>_R_Gof= 0.75 Ω, dv/dt =<br>4910 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||6.1||mJ| ||||_T_vj= 125 °C||10.2||| ||||_T_vj= 150 °C||11.5||| |Thermal resistance,<br>junction to case|_R_thJC|per IGBT||||0.108|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per IGBT,λgrease= 5 W/(m·K)|||0.0240||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **3 IGBT, T2 / T3** |**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1200|V| |Implemented collector<br>current|_I_CN|||450|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_C= 115 °C|335|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||600|A| |Gate-emitter peak voltage|_V_GES|||±20|V| |**Table 6**<br>**Characteristic values**|**Table 6**<br>**Characteristic values**|**Table 6**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 250 A,_V_GE= 15 V|_T_vj= 25 °C||1.33|1.50|V| ||||_T_vj= 125 °C||1.34||| ||||_T_vj= 175 °C||1.35||| |Gate threshold voltage|_V_GEth|_I_C= 10.5 mA, VCE= VGE,_T_vj= 25 °C||5.15|5.8|6.45|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 600 V, Tvj= 25 °C|||7.5||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0.33||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||90.4||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.315||nF| **(table continues...)** Datasheet Revision 1.00 2024-12-18 5 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **3 IGBT, T2 / T3** |**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||0.024|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 250 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gon= 0.47 Ω|_T_vj= 25 °C||0.120||µs| ||||_T_vj= 125 °C||0.130||| ||||_T_vj= 175 °C||0.138||| |Rise time (inductive load)|_t_r|_I_C= 250 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gon= 0.47 Ω|_T_vj= 25 °C||0.030||µs| ||||_T_vj= 125 °C||0.034||| ||||_T_vj= 175 °C||0.035||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 250 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gof= 0.47 Ω|_T_vj= 25 °C||0.360||µs| ||||_T_vj= 125 °C||0.490||| ||||_T_vj= 175 °C||0.560||| |Fall time (inductive load)|_t_f|_I_C= 250 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gof= 0.47 Ω|_T_vj= 25 °C||0.065||µs| ||||_T_vj= 125 °C||0.150||| ||||_T_vj= 175 °C||0.210||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 250 A,_V_CC= 500 V,<br>_L_σ= 15 nH,_V_GE= ±15 V,<br>_R_Gon= 0.47 Ω, di/dt =<br>7.68 kA/µs (Tvj= 175 °C)|_T_vj= 25 °C||4.45||mJ| ||||_T_vj= 125 °C||6.96||| ||||_T_vj= 150 °C||8.6||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 250 A,_V_CC= 500 V,<br>_L_σ= 15 nH,_V_GE= ±15 V,<br>_R_Gof= 0.47 Ω, dv/dt =<br>2200 V/µs (Tvj= 175 °C)|_T_vj= 25 °C||16.5||mJ| ||||_T_vj= 125 °C||28||| ||||_T_vj= 150 °C||35.7||| |Thermal resistance,<br>junction to case|_R_thJC|per IGBT||||0.0930|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per IGBT,λgrease= 5 W/(m·K)|||0.0220||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| _**Note** : T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ Datasheet Revision 1.00 2024-12-18 6 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Diode, D1 / D4** ## **4 Diode, D1 / D4** |**4**<br>**Diode, D1 / D4**|**4**<br>**Diode, D1 / D4**|**4**<br>**Diode, D1 / D4**||||| |---|---|---|---|---|---|---| |**Table 7**<br>**Maximum rated values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C||950|V| |Implemented forward<br>current|_I_FN||||300|A| |Continuous DC forward<br>current|_I_F||||250|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms|||600|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C||3100|A²s| ||||_T_vj= 150 °C||2900|| |**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 250 A,_V_GE= 0 V|_T_vj= 25 °C||2.42|2.67|V| ||||_T_vj= 125 °C||2.22||| ||||_T_vj= 150 °C||2.16||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 500 V,_I_F= 250 A,<br>_V_GE= -15 V, -diF/dt = 7.8<br>kA/µs (Tvj= 150 °C)|_T_vj= 25 °C||208||A| ||||_T_vj= 125 °C||290||| ||||_T_vj= 150 °C||312||| |Recovered charge|_Q_r|_V_CC= 500 V,_I_F= 250 A,<br>_V_GE= -15 V, -diF/dt = 7.8<br>kA/µs (Tvj= 150 °C)|_T_vj= 25 °C||8.6||µC| ||||_T_vj= 125 °C||18||| ||||_T_vj= 150 °C||22||| |Reverse recovery energy|_E_rec|_V_CC= 500 V,_I_F= 250 A,<br>_V_GE= -15 V, -diF/dt = 7.8<br>kA/µs (Tvj= 150 °C)|_T_vj= 25 °C||3||mJ| ||||_T_vj= 125 °C||6.6||| ||||_T_vj= 150 °C||8||| |Thermal resistance,<br>junction to case|_R_thJC|per diode||||0.257|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 5 W/(m·K)|||0.0300||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| Datasheet Revision 1.00 2024-12-18 7 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Diode, D2 / D3** ## **5 Diode, D2 / D3** |**5**<br>**Diode, D2 / D3**|**5**<br>**Diode, D2 / D3**|**5**<br>**Diode, D2 / D3**||||| |---|---|---|---|---|---|---| |**Table 9**<br>**Maximum rated values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C||1200|V| |Implemented forward<br>current|_I_FN||||300|A| |Continuous DC forward<br>current|_I_F||||250|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms|||600|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C||4150|A²s| ||||_T_vj= 175 °C||3600|| |**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 250 A,_V_GE= 0 V|_T_vj= 25 °C||1.62|1.93|V| ||||_T_vj= 125 °C||1.49||| ||||_T_vj= 175 °C||1.42||| |Thermal resistance,<br>junction to case|_R_thJC|per diode||||0.204|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 5 W/(m·K)|||0.0290||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| _**Note** : T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **6 Diode, D5 / D6** **Table 11 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---|---| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |Continuous DC forward<br>current|_I_F|||200|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||400|A| |**(table continues...)**|||||| Datasheet Revision 1.00 2024-12-18 8 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **7 NTC-Thermistor** |**Table 11**<br>**(continued) Maximum rated values**|**Table 11**<br>**(continued) Maximum rated values**|**Table 11**<br>**(continued) Maximum rated values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C||1800||A²s| ||||_T_vj= 150 °C||1460||| ||||||||| |**Table 12**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 200 A,_V_GE= 0 V|_T_vj= 25 °C||1.45|1.75|V| ||||_T_vj= 125 °C||1.75||| ||||_T_vj= 150 °C||1.85||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 500 V,_I_F= 200 A,<br>_V_GE= -15 V, -diF/dt = 9.2<br>kA/µs (Tvj= 150 °C)|_T_vj= 25 °C||76||A| ||||_T_vj= 125 °C||76||| ||||_T_vj= 150 °C||76||| |Recovered charge|_Q_r|_V_CC= 500 V,_I_F= 200 A,<br>_V_GE= -15 V, -diF/dt = 9.2<br>kA/µs (Tvj= 150 °C)|_T_vj= 25 °C||1.28||µC| ||||_T_vj= 125 °C||1.28||| ||||_T_vj= 150 °C||1.28||| |Reverse recovery energy|_E_rec|_V_CC= 500 V,_I_F= 200 A,<br>_V_GE= -15 V, -diF/dt = 9.2<br>kA/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.32||mJ| ||||_T_vj= 125 °C||0.32||| ||||_T_vj= 150 °C||0.32||| |Thermal resistance,<br>junction to case|_R_thJC|per diode||||0.231|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 5 W/(m·K)|||0.0290||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **7 NTC-Thermistor** |**7**<br>**NTC-Thermistor**|**7**<br>**NTC-Thermistor**|**7**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 13**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|Δ_R/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| Datasheet Revision 1.00 2024-12-18 9 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **7 NTC-Thermistor** _**Note** : For an analytical description of the NTC characteristics please refer to AN2009-10, chapter 4._ Datasheet Revision 1.00 2024-12-18 10 **F3L600R10N3S7F EconoPACK[™] 3 module** **8 Characteristics diagrams** **8 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Output characteristic (typical), IGBT, T1 / T4** IC = f(VCE) VGE = 15 V **Output characteristic field (typical), IGBT, T1 / T4** IC = f(VCE) T = 150 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 500 500<br>450 450<br>400 400<br>350 350<br>300 300<br>250 250<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5<br>Transfer characteristic (typical), IGBT, T1 / T4 Gate charge characteristic (typical), IGBT, T1 / T4<br>IC = f(VGE) VGE = f(QG)<br>VCE = 20 V IC = 600 A, Tvj = 25 °C<br>500 15<br>450<br>10<br>400<br>350<br>5<br>300<br>250 0<br>200<br>-5<br>150<br>100<br>-10<br>50<br>0 -15<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0.00 0.25 0.50 0.75 1.00 1.25 1.50<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-12-18 11 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **Capacity characteristic (typical), IGBT, T1 / T4 Switching times (typical), IGBT, T1 / T4** C = f(VCE) t = f(IC) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0.1<br>0.01<br>0 20 40 60 80 100<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, T1 / T4** ## t = f(RG) IC = 250 A, VCC = 500 V, -15 / 15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 2 4 6 8 10 12 14 16 18 20<br>**----- End of picture text -----**<br> VCC = 500 V, Tvj = 150 °C, RGoff = 0.75 Ω, RGon = 1.8 Ω, VGE = ±15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0.001<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br> ## **Switching losses (typical), IGBT, T1 / T4** E = f(IC) RGoff = 0.75 Ω, RGon = 1.8 Ω, VCC = 500 V, -15 / 15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 25.0<br>22.5<br>20.0<br>17.5<br>15.0<br>12.5<br>10.0<br>7.5<br>5.0<br>2.5<br>0.0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-12-18 12 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **Switching losses (typical), IGBT, T1 / T4** E = f(RG) ## IC = 250 A, VCC = 500 V, -15 / 15 V **Reverse bias safe operating area (RBSOA), IGBT, T1 / T4** IC = f(VCE) RGoff = 0.75 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 30.0 800<br>27.5<br>700<br>25.0<br>22.5 600<br>20.0<br>500<br>17.5<br>15.0 400<br>12.5<br>300<br>10.0<br>7.5 200<br>5.0<br>100<br>2.5<br>0.0 0<br>0 2 4 6 8 10 12 14 16 18 20 0 100 200 300 400 500 600 700 800 900 1000<br>Transient thermal impedance, IGBT, T1 / T4 Output characteristic (typical), IGBT, T2 / T3<br>Zth = f(t) IC = f(VCE)<br>VGE = 15 V<br>1 500<br>450<br>400<br>350<br>0.1<br>300<br>250<br>200<br>0.01<br>150<br>100<br>50<br>0.001 0<br>0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-12-18 13 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **==> picture [237 x 43] intentionally omitted <==** **----- Start of picture text -----**<br> Output characteristic field (typical), IGBT, T2 / T3<br>IC = f(VCE)<br>T = 175 °C<br>vj<br>**----- End of picture text -----**<br> **Transfer characteristic (typical), IGBT, T2 / T3** IC = f(VGE) VCE = 20 V **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 500 500<br>450 450<br>400 400<br>350 350<br>300 300<br>250 250<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0<br>Gate charge characteristic (typical), IGBT, T2 / T3 Capacity characteristic (typical), IGBT, T2 / T3<br>VGE = f(QG) C = f(VCE)<br>IC = 450 A, Tvj = 25 °C f = 100 kHz, VGE = 0 V, Tvj = 25 °C<br>15 1000<br>10<br>100<br>5<br>10<br>0<br>1<br>-5<br>0.1<br>-10<br>-15 0.01<br>0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 20 40 60 80 100<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-12-18 14 **F3L600R10N3S7F EconoPACK[™] 3 module** **8 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Switching times (typical), IGBT, T2 / T3** ## t = f(IC) RGoff = 0.47 Ω, RGon = 0.47 Ω, VCC = 500 V, ± 15 V, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0.001<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br> ## **Switching losses (typical), IGBT, T2 / T3** E = f(IC) RGoff = 0.47 Ω, RGon = 0.47 Ω, VCC = 500 V, ± 15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 70.0<br>60.0<br>50.0<br>40.0<br>30.0<br>20.0<br>10.0<br>0.0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, T2 / T3** t = f(RG) IC = 250 A, VCC = 500 V, ± 15 V, Tvj = 175 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>**----- End of picture text -----**<br> **Switching losses (typical), IGBT, T2 / T3** E = f(RG) IC = 250 A, VCC = 500 V, ± 15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-12-18 15 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **Reverse bias safe operating area (RBSOA), IGBT, T2 / T3** **Transient thermal impedance, IGBT, T2 / T3** Zth = f(t) **==> picture [43 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> IC = f(VCE)<br>**----- End of picture text -----**<br> RGoff = 0.47 Ω, VGE = ±15 V, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 800<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br> **Forward characteristic (typical), Diode, D1 / D4** IF = f(VF) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **Switching losses (typical), Diode, D1 / D4** Erec = f(IF) RG = 0.47 Ω, VCC = 500 V **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 500 12<br>11<br>450<br>10<br>400<br>9<br>350<br>8<br>300<br>7<br>250 6<br>5<br>200<br>4<br>150<br>3<br>100<br>2<br>50<br>1<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-12-18 16 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **Switching losses (typical), Diode, D1 / D4** Erec = f(RG) IF = 250 A, VCC = 500 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 1 2 3 4 5<br>**----- End of picture text -----**<br> **Forward characteristic (typical), Diode, D2 / D3** IF = f(VF) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 500<br>450<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5<br>**----- End of picture text -----**<br> ## **Transient thermal impedance, Diode, D1 / D4** Zth = f(t) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **Transient thermal impedance, Diode, D2 / D3** Zth = f(t) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-12-18 17 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **Forward characteristic (typical), Diode, D5 / D6** IF = f(VF) ## **Switching losses (typical), Diode, D5 / D6** Erec = f(IF) RGon = 1.8 Ω, VCE = 500 V **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 400 1.0<br>360<br>320 0.8<br>280<br>240 0.6<br>200<br>160 0.4<br>120<br>80 0.2<br>40<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 40 80 120 160 200 240 280 320 360 400<br>Switching losses (typical), Diode, D5 / D6 Transient thermal impedance, Diode, D5 / D6<br>Erec = f(RG) Zth = f(t)<br>VCE = 500 V, IF = 200 A<br>1.0 1<br>0.8<br>0.6<br>0.1<br>0.4<br>0.2<br>0.0 0.01<br>0 2 4 6 8 10 12 14 16 18 20 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-12-18 18 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **==> picture [540 x 291] intentionally omitted <==** **----- Start of picture text -----**<br> Temperature characteristic (typical), NTC-Thermistor<br>R = f(TNTC)<br>100000<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-12-18 19 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Circuit diagram** **9 Circuit diagram** **==> picture [363 x 505] intentionally omitted <==** **==> picture [11 x 12] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> ## **Figure 1** Datasheet Revision 1.00 2024-12-18 20 **F3L600R10N3S7F EconoPACK[™] 3 module** **10 Package outlines** **==> picture [105 x 47] intentionally omitted <==** ## **10 Package outlines** **==> picture [337 x 618] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>122 ` 0,5<br>According to Application Note<br>E<br>(28,75) j n 0,3 A B C<br>25<br>Y<br>X<br>0<br>25<br>(28,75)<br>B D n (5,5) j n 0,3 A D E<br>j n 0,3 A B C 110 ` 0,1 Distance of threaded holes in heatsink 2x<br>A<br>j 0,5 A<br>4x<br>j 1 A c 0,3 CZ<br>40x j 0,7 A<br>according to screw head washer<br>according to screw head<br>28,7529,21 37 36 35 34 33 32 31 30 29 28 27 26 25 24<br>25<br>9,53 23<br>5,72 22<br>1,91 21<br>0 38<br>1,91 39<br>5,729,53 40 20<br>13,34 19<br>25<br>28,75<br>29,21 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18<br>Tolerance of PCB hole pattern j n 0,1<br>For PressFIT pin: Details about hole specification for contacts refer to AN2007-09<br>For Solderpin: Details about hole specification for contacts refer to AN2017-03<br>Dimensions according to ISO 14405 GG (Method of least squares (LSQ)).<br>Reference D and E defined with GG<br>ISO 8015 - Independency principle<br>120,8305<br>( n<br>5,5)<br>( n<br>5,5)<br>24,444°<br>55 (47,25) 0 (47,25) 55<br>0,5 ` 0,5 `<br>62,5 62<br>0,1 Distance of threaded holes in heatsink<br> `<br>50<br>6,85<br>20,6 17<br>41,91 38,1 19,05 15,24 11,43 7,62 3,81 0 3,81 7,62 11,43 15,24 38,1 41,91<br>59,06 55 47,25 40,01 36,2 32,39 28,58 24,77 13,34 9,53 5,72 1,91 0 1,91 5,72 9,53 13,34 24,77 28,58 32,39 36,2 40,01 47,25 55 59,06<br>W00255462.01<br>**----- End of picture text -----**<br> ## **Figure 2** Datasheet Revision 1.00 2024-12-18 21 **F3L600R10N3S7F EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **11 Module label code** ## **11 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.00 2024-12-18 22 **F3L600R10N3S7F EconoPACK[™] 3 module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2024-11-05|Initial version| |1.00|2024-12-18|Final datasheet| Datasheet Revision 1.00 2024-12-18 23 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2024-12-18 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2024 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABK178-002** Infineon Technologies in customer’s applications. ## 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For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
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