Image not available
Illustrative purposes only
F3L50R06W1E3B11BOMA1
IGBT Module, Three level Inverter, 75 A, 1.45 V, 175 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Product Range: EconoPACK 4
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 175W
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 75A
- Power Dissipation Pd: 175W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 75A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Voltage V(br)ceo: 600V
- Collector Emitter Saturation Voltage: 1.45V
- Collector Emitter Saturation Voltage Vce(on): 1.45V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 23.01 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules ## F3L50R06W1E3_B11 **==> picture [20 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> m J y<br>**----- End of picture text -----**<br> VCES = 600V IC nom = 50A / ICRM = 100A - 3-Level-Applikationen - - USV-Systeme - 3-Level-Applications - - - - - CEsat - - - CEsat - Al2O3 Substrat mit kleinem thermischen Widerstand - - - Robuste Montage durch integrierte Befestigungsklammern - Al2O3 - - - Rugged mounting due to integrated mounting clamps **Digit** 1 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules F3L50R06W1E3_B11 **==> picture [86 x 38] intentionally omitted <==** ## **IGBT,Wechselrichter�/�IGBT,Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>F3L50R06W1E3_B11<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:CM<br>approvedby:AKDA<br>dateofpublication:2014-03-13<br>revision:3.1<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>50<br>75<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>175<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,50<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>3,10<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,095<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 8,2Ω<br>td on<br>0,025<br>0,025<br>0,025<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 8,2Ω<br>tr<br>0,013<br>0,016<br>0,017<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 8,2Ω<br>td off<br>0,18<br>0,20<br>0,21<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 50 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 8,2Ω<br>tf<br>0,06<br>0,075<br>0,085<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 3000 A/µs (Tvj= 150°C)<br>RGon= 8,2Ω<br>Eon<br>0,20<br>0,35<br>0,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 4400 V/µs (Tvj= 150°C)<br>RGoff= 8,2Ω<br>Eoff<br>1,20<br>1,50<br>1,60<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>350<br>250<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,75<br>0,85<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,70<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 IGBT-Module IGBT-modules F3L50R06W1E3_B11 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|600||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|50|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|100|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|370<br>330|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||74,0<br>87,0<br>91,0||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,30<br>4,70<br>5,10||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,70<br>1,30<br>1,50||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||1,00|1,10|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,85||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| prepared�by:�CM date�of�publication:�2014-03-13 approved�by:�AKDA revision:�3.1 3 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules F3L50R06W1E3_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�D5-D6�/�Diode,�D5-D6** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|50|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|100|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|560<br>500<br>|A²s<br>A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,50<br>1,45<br>1,40|1,90|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||74,0<br>87,0<br>91,0||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,30<br>4,70<br>5,10||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,70<br>1,30<br>1,50||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,80|0,90|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,70||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�CM date�of�publication:�2014-03-13 approved�by:�AKDA revision:�3.1 4 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules F3L50R06W1E3_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||15||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||2,00||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N| |Gewicht<br>Weight||G||24||g| Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin. prepared�by:�CM date�of�publication:�2014-03-13 approved�by:�AKDA revision:�3.1 5 IGBT-Module IGBT-modules ## F3L50R06W1E3_B11 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>100 | 100 es<br>aa<br>Tvj = 25°C VGE = 19 V<br>90 Tvj = 125°C / / 90 P VGE = 17 V oo<br>E Tvj = 150°C WU] / c VGE = 15 V | / = -_—<br>VGE = 13 V<br>80 80 VGE = 11 V<br>VGE = 9 V<br>EL MA<br>70 70<br>p o | |<br>60 60<br>Pe ee eee Pee<br>l wa<br>50 50<br>Pr ar eee): ae<br>ff jiehi | /<br>40 40<br>/<br>/<br>30 30<br>20 20<br>ee eee eee) )a e<br>10 10<br>Se/ hi.<br>0 0<br>| ) DAP<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =82 Ω ,R Goff =82 Ω ,V CE =300V<br>100 3,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>90 Mm Tvj = 125°C 1. Le I Mm Eoff, Tvj = 125°C hh<br>Tvj = 150°C Eon, Tvj = 150°C o<br>—Se 2,5 I F Eoff, Tvj = 150°C boppe<br>80<br>| ty | “<br>70<br>pf : TT Aa<br>i¢ 2,0 Pp e t<br>60<br>pt |p t Va<br>50 Pt tttaFE |) 1,5 CPPEe<br>40<br>1,0<br>30 eeAy ee ee ee eee<br>20<br>pt | lA) | : ye<br>ee 0,5 ATEs<br>10<br>ee aan<br>0 0,0<br>5 6 7 8 9 10 11 12 0 10 20 30 40 50 60 70 80 90 100<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 6 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## F3L50R06W1E3_B11 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =50A,V CE =300V<br>6,0 Ss | 10 [—TTITIt_1.tit1st s7Ttftotes s+7+tto<br>Eon, Tvj = 125°C ZthJH : IGBT<br>Eoff, Tvj = 125°C oo<br>Eon, Tvj = 150°C<br>5,0 | Eoff, Tvj = 150°C TT TTT<br>ae Ho] tf] Co ___<br>on e l ae PCCMSTCorn Cn CTT CO<br>4,0 | |tr | 1<br>pt ee en<br>P| | | f | Ky fy LIMEt LUEeeLINtect<br>P| | ft | WyZ ff | PEEeTEH<br>3,0<br>JZ a<br>2,0 0,1<br>es Seer ceeest aeeetiiieemeiiieeesia<br>1,0 rT AYTuA mereTT yyy A eeTT<br>i: 1 2 3 4<br>ri[K/W]: 0,083 0,193 0,586 0,588<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0,0 0,01<br>0 10 20 30 40 50 60 70 80 90 0,0001 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =+15V,R Goff =82 Ω ,T vj =150°C<br>110 100<br>IC, Modul Tvj = 25°C<br>100 I C , Chip 90 Tvj = 125°C<br>fF F Tvj = 150°C L<br>90<br>80<br>80<br>70<br>70<br>60<br>60 Pt EEE H<br>50<br>50 Pte EE Hf<br>40<br>40<br>30<br>Ht PEE EEE A<br>30<br>20 PPE pe Pye 20 PPLE LaZr<br>10 Se 10 EPA<br>0 Pt | | 0 Ba n ecanneee<br>0 100 200 300 400 500 600 700 800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 7 IGBT-Module IGBT-modules ## F3L50R06W1E3_B11 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F) Erec =f(R G)<br>RGon ae Ω ,V CE =300V IF -50RV CE = 300 V<br>2,8 2,4<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>[es el ee ee qt)<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>2,4<br>2,0<br>Bee) [Bee] tf 4<br>2,0<br>1,6<br>FO<br>1,6<br>PE Pe a ee<br>c ere TT 1,2 PAS | ET | ee |<br>1,2 Pot tL eT— | Nee\ eee<br>EEE Yo<br>CZ eee<br>0,8<br>0,8<br>Ploy | | Et | PSSA<br>Pia | | | tl ae<br>0,4<br>0,4<br>PPE Pi} pe Pre<br>0,0 0,0<br>0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Durchlasskennlinie der Diode, D5-D6 (typisch)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, D5-D6 (typical)<br>ZthJH = f(t) IF =f(V F)<br>10 100<br>H ZthJH : Diode S eo Tvj = 25°C<br>Tt pe ioo Ty] EH 90 mH Tvj = 125°C | ii) gil.H<br>Tvj = 150°C<br>Pra PI ETE ee ECT| 8070 Eb PL][TTty) ty aR||<br>60<br>1 50<br>YT | TT AA TTT TTT TTT A<br>a ee el 40 ray<br>a)7241 | 30 Pi | t |) ; ATE/ yd<br>IE ETE EEE 20 Pt] | Lay py dd<br>i: 1 2 3 4<br>71 PTI FEC r τ ii[K/W]:[s]: 0,1570,0005 0,3370,005 0,7580,05 A 0,5980,2 10 RAPP<br>0,1 a ivesesenres e n 0 | ber | EE<br>0,001 0,01 0,1 1 10 0,0 0,4 0,8 1,2 1,6 2,0 2,4<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJH [A]IF<br>Z<br>**----- End of picture text -----**<br> 8 IGBT-Module IGBT-modules F3L50R06W1E3_B11 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =fil F) Erec =f(R G)<br>RGon ho Ω ,V CE =300V IF = 50K V CE = 300 V<br>2,8 2,4<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>= fF<br>2,4<br>2,0<br>2,0<br>1,6<br>UU ee eee<br>1,6<br>1,2<br>ey] ETT PvS| | | tt ye<br>1,2 oat NS<br>0,8<br>at te} HARREH<br>0,8<br>Swe<br>Yoo) 0,4 bt<br>0,4<br>eee<br>0,0 0,0<br>0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, D5-D6 NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, D5-D6 NTC-Thermistor-temperature characteristic (typical)<br>ZthJH = f (t) R=f(T)<br>10 100000<br>ZthJH : Diode Rtyp<br>[ee = =—— —————<br>a [J p<br>PT TTT EET EET ETT es s e<br>l l es ee<br>a ry.<br>10000<br>PE TTIN LEHI LEHI LEHI = Xp<br>te rt ES NN se ee<br>1<br>MM) ESSE SE<br>eeAa ee eel aNNX<br>| 1000 ————_————<br>2A | eer nnn Gn nTSSG<br>at Ra || | ee<br>i: 1 2 3 4<br>ri[K/W]: 0,118 0,26 0,617 0,505<br>τ i[s]: 0,0005 0,005 0,05 0,2 pT<br>0,1 Toon 100 Pt<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br> 9 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules F3L50R06W1E3_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�circuit_diagram_headline** **==> picture [213 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>Infineon<br>**----- End of picture text -----**<br> ## **Gehäuseabmessungen�/�package�outlines** **==> picture [128 x 50] intentionally omitted <==** **==> picture [190 x 244] intentionally omitted <==** **==> picture [218 x 202] intentionally omitted <==** prepared�by:�CM date�of�publication:�2014-03-13 approved�by:�AKDA revision:�3.1 10 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## F3L50R06W1E3_B11 **==> picture [110 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> Nutzungsbedingungen<br>**----- End of picture text -----**<br> **==> picture [42 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> application.<br>**----- End of picture text -----**<br> 11
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →