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F3L500R12W3H7H11BPSA1
IGBT Module, 325 A, 1.69 V, 20 mW, 175 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: Lead (25-Jun-2025)
- Product Range: EasyPACK Series
- IGBT Technology: -
- IGBT Termination: Press Fit
- Power Dissipation: 20mW
- IGBT Configuration: -
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Continuous Collector Current: 325A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.69V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 102.11 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**F3L500R12W3H7_H11 EasyPACK[™] module** _ ## **Final datasheet** ## **EasyPACK[™] module with active "Neutral Point Clamp 2" topology and PressFIT / NTC** ## **Features** - Electrical features - VCES = 1200 V - IC nom = 500 A / ICRM = 1000 A - Ultra fast IGBT chips - Low inductive design - Low switching losses - Low V CE,sat - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder - Mechanical features - 3.2 kV AC 1 minute insulation - High current pin - PressFIT contact technology - Rugged mounting due to integrated mounting clamps - Al2O3 substrate with low thermal resistance ## **Potential applications** - Three-level applications - Solar applications ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** Datasheet www.infineon.com Please read the sections "Important n document Revision 1.00 2024-02-29 **F3L500R12W3H7_H11 EasyPACK[™] module** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, T1 / T2**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**3**|**Diode, D1 / D2**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5| |**4**|**IGBT, T3 / T4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**5**|**Diode, D3 / D4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7| |**6**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8| |**7**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9| |**8**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17| |**9**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17| |**10**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20| Datasheet Revision 1.00 2024-02-29 2 **F3L500R12W3H7_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||||| |---|---|---|---|---|---|---|---| |**Table 1**<br>**Insulation coordination**|||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|||3.2||kV| |Isolation test voltage NTC|_V_ISOL(NTC)|RMS, f = 50 Hz,_t_= 1 min|||3.2||kV| |Internal isolation||basic insulation (class 1, IEC 61140)|||Al2O3||| |Comparative tracking<br>index|_CTI_||||> 400||| |Relative thermal index<br>(electrical)|_RTI_|housing|||140||°C| |**Table 2**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||15||nH| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TH= 25 °C, per switch|||1.6||mΩ| |Storage temperature|_T_stg|||-40||125|°C| |Mounting torque for<br>module mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|1.3||1.5|Nm| |Weight|_G_||||78||g| _**Note** : The current under continuous operation is limited to 50 A rms per connector pin._ ## **2 IGBT, T1 / T2** |**2**<br>**IGBT, T1 / T2**|**2**<br>**IGBT, T1 / T2**|**2**<br>**IGBT, T1 / T2**|**2**<br>**IGBT, T1 / T2**|**2**<br>**IGBT, T1 / T2**|**2**<br>**IGBT, T1 / T2**| |---|---|---|---|---|---| |**Table 3**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1200|V| |Implemented collector<br>current|_I_CN|||510|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|325|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||1020|A| |Gate-emitter peak voltage|_V_GES|||±20|V| Datasheet Revision 1.00 2024-02-29 3 **F3L500R12W3H7_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, T1 / T2** ## **Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 4**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 500 A,_V_GE= 15 V|_T_vj= 25 °C||1.69|2.23|V| ||||_T_vj= 125 °C||1.89||| ||||_T_vj= 175 °C||1.98||| |Gate threshold voltage|_V_GEth|_I_C= 8.16 mA, VCE= VGE,_T_vj= 25 °C||4.85|5.5|6.15|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 600 V|||7.52||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||1.7||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||57.9||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.37||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||22|µA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 500 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gon= 0.68 Ω|_T_vj= 25 °C||0.410||µs| ||||_T_vj= 125 °C||0.460||| ||||_T_vj= 175 °C||0.480||| |Rise time (inductive load)|_t_r|_I_C= 500 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gon= 0.68 Ω|_T_vj= 25 °C||0.037||µs| ||||_T_vj= 125 °C||0.041||| ||||_T_vj= 175 °C||0.044||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 500 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gof= 6.8 Ω|_T_vj= 25 °C||0.010||µs| ||||_T_vj= 125 °C||0.014||| ||||_T_vj= 175 °C||0.015||| |Fall time (inductive load)|_t_f|_I_C= 500 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gof= 6.8 Ω|_T_vj= 25 °C||0.027||µs| ||||_T_vj= 125 °C||0.055||| ||||_T_vj= 175 °C||0.082||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 500 A,_V_CC= 500 V,<br>_L_σ= 10 nH,_V_GE= ±15 V,<br>_R_Gon= 0.68 Ω, di/dt =<br>11300 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||18.3||mJ| ||||_T_vj= 125 °C||19.9||| ||||_T_vj= 175 °C||21.7||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 500 A,_V_CC= 500 V,<br>_L_σ= 10 nH,_V_GE= ±15 V,<br>_R_Gof= 6.8 Ω, dv/dt =<br>5400 V/µs (Tvj= 175 °C)|_T_vj= 25 °C||16.3||mJ| ||||_T_vj= 125 °C||22.6||| ||||_T_vj= 175 °C||26.6||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT,λgrease= 3.3 W/(m·K)|||0.157||K/W| |**(table continues...)**|||||||| Datasheet Revision 1.00 2024-02-29 4 **F3L500R12W3H7_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, D1 / D2** |**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Temperature under<br>switching conditions|_T_vj op||-40||175|°C| _**Note** : T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **3 Diode, D1 / D2** **Table 5 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |---|---|---|---|---|---|---| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C||1200|V| |Implemented forward<br>current|_I_FN||||300|A| |Continuous DC forward<br>current|_I_F||||165|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms|||600|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C||1920|A²s| ||||_T_vj= 175 °C||1310|| |**Table 6**<br>**Characteristic values**|**Table 6**<br>**Characteristic values**|**Table 6**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 300 A,_V_GE= 0 V|_T_vj= 25 °C||2.50|3.05|V| ||||_T_vj= 125 °C||2.18||| ||||_T_vj= 175 °C||1.98||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 500 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>5290 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||115||A| ||||_T_vj= 125 °C||190||| ||||_T_vj= 175 °C||240||| |Recovered charge|_Q_r|_V_CC= 500 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>5290 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||7.1||µC| ||||_T_vj= 125 °C||17.8||| ||||_T_vj= 175 °C||23.1||| |Reverse recovery energy|_E_rec|_V_CC= 500 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>5290 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||2.14||mJ| ||||_T_vj= 125 °C||5.3||| ||||_T_vj= 175 °C||8.08||| **(table continues...)** Datasheet Revision 1.00 2024-02-29 5 **F3L500R12W3H7_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **4 IGBT, T3 / T4** |**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,λgrease= 3.3 W/(m·K)||0.370||K/W| |Temperature under<br>switching conditions|_T_vj op||-40||175|°C| _**Note** : T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **4 IGBT, T3 / T4** |**Table 7**<br>**Maximum rated values**|**Table 7**<br>**Maximum rated values**|**Table 7**<br>**Maximum rated values**|**Table 7**<br>**Maximum rated values**|**Table 7**<br>**Maximum rated values**|**Table 7**<br>**Maximum rated values**| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|950|V| |Implemented collector<br>current|_I_CN|||400|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 150 °C|_T_H= 65 °C|180|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||800|A| |Gate-emitter peak voltage|_V_GES|||±20|V| ## **Table 8 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 400 A,_V_GE= 15 V|_T_vj= 25 °C||1.85|2.25|V| ||||_T_vj= 125 °C||2.10||| ||||_T_vj= 150 °C||2.15||| |Gate threshold voltage|_V_GEth|_I_C= 6.5 mA, VCE= VGE,_T_vj=|25 °C|4.35|5.10|5.85|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 600 V|||0.9||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0.75||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||25.2||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.078||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 950 V,_V_GE= 0 V|_T_vj= 25 °C|||120|µA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| **(table continues...)** Datasheet Revision 1.00 2024-02-29 6 **F3L500R12W3H7_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Diode, D3 / D4** |**Table 8**<br>**(continued) Characteristic values**|**Table 8**<br>**(continued) Characteristic values**|**Table 8**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 400 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gon= 3.9 Ω|_T_vj= 25 °C||0.094||µs| ||||_T_vj= 125 °C||0.096||| ||||_T_vj= 150 °C||0.097||| |Rise time (inductive load)|_t_r|_I_C= 400 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gon= 3.9 Ω|_T_vj= 25 °C||0.055||µs| ||||_T_vj= 125 °C||0.058||| ||||_T_vj= 150 °C||0.059||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 400 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gof= 22 Ω|_T_vj= 25 °C||0.760||µs| ||||_T_vj= 125 °C||0.800||| ||||_T_vj= 150 °C||0.820||| |Fall time (inductive load)|_t_f|_I_C= 400 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gof= 22 Ω|_T_vj= 25 °C||0.055||µs| ||||_T_vj= 125 °C||0.056||| ||||_T_vj= 150 °C||0.063||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 400 A,_V_CC= 500 V,<br>_L_σ= 40 nH,_V_GE= ±15 V,<br>_R_Gon= 3.9 Ω, di/dt =<br>5290 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||23.5||mJ| ||||_T_vj= 125 °C||24.4||| ||||_T_vj= 150 °C||24.9||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 400 A,_V_CC= 500 V,<br>_L_σ= 40 nH,_V_GE= ±15 V,<br>_R_Gof= 22 Ω, dv/dt = 4270<br>V/µs (Tvj= 150 °C)|_T_vj= 25 °C||17.1||mJ| ||||_T_vj= 125 °C||18.9||| ||||_T_vj= 150 °C||21.2||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT,λgrease= 3.3 W/(m·K)|||0.269||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **5 Diode, D3 / D4** |**5**<br>**Diode, D3 / D4**|**5**<br>**Diode, D3 / D4**|**5**<br>**Diode, D3 / D4**|**5**<br>**Diode, D3 / D4**|**5**<br>**Diode, D3 / D4**|**5**<br>**Diode, D3 / D4**| |---|---|---|---|---|---| |**Table 9**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|950|V| |Implemented forward<br>current|_I_FN|||500|A| |Continuous DC forward<br>current|_I_F|||185|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||1000|A| **(table continues...)** Datasheet Revision 1.00 2024-02-29 7 **F3L500R12W3H7_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **6 NTC-Thermistor** |**Table 9**<br>**(continued) Maximum rated values**|**Table 9**<br>**(continued) Maximum rated values**|**Table 9**<br>**(continued) Maximum rated values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C||4500||A²s| ||||_T_vj= 150 °C||3740||| |**Table 10**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 500 A,_V_GE= 0 V|_T_vj= 25 °C||2.60|2.90|V| ||||_T_vj= 125 °C||2.40||| ||||_T_vj= 150 °C||2.35||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 500 V,_I_F= 500 A,<br>_V_GE= -15 V, -diF/dt =<br>11300 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||251||A| ||||_T_vj= 125 °C||383||| ||||_T_vj= 150 °C||419||| |Recovered charge|_Q_r|_V_CC= 500 V,_I_F= 500 A,<br>_V_GE= -15 V, -diF/dt =<br>11300 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||15||µC| ||||_T_vj= 125 °C||31.5||| ||||_T_vj= 150 °C||37.7||| |Reverse recovery energy|_E_rec|_V_CC= 500 V,_I_F= 500 A,<br>_V_GE= -15 V, -diF/dt =<br>11300 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||3.79||mJ| ||||_T_vj= 125 °C||9.67||| ||||_T_vj= 150 °C||11.8||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,λgrease= 3.3 W/(m·K)|||0.294||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **6 NTC-Thermistor** |**6**<br>**NTC-Thermistor**|**6**<br>**NTC-Thermistor**|**6**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 11**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|Δ_R/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _**Note** : For an analytical description of the NTC characteristics please refer to AN2009-10, chapter 4_ Datasheet Revision 1.00 2024-02-29 8 **F3L500R12W3H7_H11 EasyPACK[™] module** **7 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** **Output characteristic (typical), IGBT, T1 / T2** IC = f(VCE) ## VGE = 15 V **Output characteristic field (typical), IGBT, T1 / T2** IC = f(VCE) T = 175 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>900 900<br>800 800<br>700 700<br>600 600<br>500 500<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>Transfer characteristic (typical), IGBT, T1 / T2 Gate charge characteristic (typical), IGBT, T1 / T2<br>IC = f(VGE) VGE = f(QG)<br>VCE = 20 V IC = 500 A, Tvj = 25 °C<br>1000 15<br>13<br>900<br>11<br>800 9<br>8<br>700 6<br>4<br>600<br>2<br>500 0<br>-2<br>400<br>-4<br>300 -6<br>-8<br>200 -9<br>-11<br>100<br>-13<br>0 -15<br>5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-02-29 9 **F3L500R12W3H7_H11 EasyPACK[™] module** **7 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Capacity characteristic (typical), IGBT, T1 / T2** ## C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, T1 / T2** ## t = f(RG) VGE = ±15 V, IC = 500 A, VCC = 500 V, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0 1 2 3 4 5 6 7<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, T1 / T2** ## t = f(IC) RGoff = 6.8 Ω, RGon = 0.68 Ω, VGE = ±15 V, VCC = 500 V, Tvj = 175 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0 100 200 300 400 500 600 700 800 900 1000<br>**----- End of picture text -----**<br> ## **Switching losses (typical), IGBT, T1 / T2** E = f(IC) RGoff = 6.8 Ω, RGon = 0.68 Ω, VCC = 500 V, VGE = ± 15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 100 200 300 400 500 600 700 800 900 1000<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-02-29 10 **F3L500R12W3H7_H11 EasyPACK[™] module** **7 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Switching losses (typical), IGBT, T1 / T2** E = f(RG) ## IC = 500 A, VCC = 500 V, VGE = ± 15 V **Reverse bias safe operating area (RBSOA), IGBT, T1 / T2** **==> picture [43 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> IC = f(VCE)<br>**----- End of picture text -----**<br> RGoff = 6.8 Ω, VGE = ±15 V, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 1 2 3 4 5 6 7<br>**----- End of picture text -----**<br> **Transient thermal impedance, IGBT, T1 / T2** Zth = f(t) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1200<br>1100<br>1000<br>900<br>800<br>700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br> ## **Forward characteristic (typical), Diode, D1 / D2** IF = f(VF) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>500<br>400<br>300<br>200<br>100<br>0<br>0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-02-29 11 **F3L500R12W3H7_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** ## **Switching losses (typical), Diode, D1 / D2** Erec = f(IF) RGon = 3.9 Ω, VCE = 500 V **Switching losses (typical), Diode, D1 / D2** Erec = f(RG) VCE = 500 V, IF = 300 A **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 12.5 12.5<br>10.0 10.0<br>7.5 7.5<br>5.0 5.0<br>2.5 2.5<br>0.0 0.0<br>0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40<br>Transient thermal impedance, Diode, D1 / D2 Output characteristic (typical), IGBT, T3 / T4<br>Zth = f(t) IC = f(VCE)<br>VGE = 15 V<br>1 800<br>700<br>600<br>500<br>0.1 400<br>300<br>200<br>100<br>0.01 0<br>0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-02-29 12 **F3L500R12W3H7_H11 EasyPACK[™] module** **7 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Output characteristic field (typical), IGBT, T3 / T4** IC = f(VCE) T = 150 °C vj ## **Transfer characteristic (typical), IGBT, T3 / T4** IC = f(VGE) VCE = 20 V **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 800 800<br>700 700<br>600 600<br>500 500<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0<br>Gate charge characteristic (typical), IGBT, T3 / T4 Capacity characteristic (typical), IGBT, T3 / T4<br>VGE = f(QG) C = f(VCE)<br>IC = 400 A, Tvj = 25 °C f = 100 kHz, VGE = 0 V, Tvj = 25 °C<br>15 100<br>10<br>10<br>5<br>0 1<br>-5<br>0.1<br>-10<br>-15 0.01<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-02-29 13 **F3L500R12W3H7_H11 EasyPACK[™] module** **7 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Switching times (typical), IGBT, T3 / T4** ## t = f(IC) RGoff = 22 Ω, RGon = 3.9 Ω, VGE = ±15 V, VCC = 500 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 100 200 300 400 500 600 700 800<br>**----- End of picture text -----**<br> ## **Switching losses (typical), IGBT, T3 / T4** ## E = f(IC) RGoff = 22 Ω, RGon = 3.9 Ω, VGE = ±15 V, VCC = 500 V ## **Switching times (typical), IGBT, T3 / T4** t = f(RG) VGE = ±15 V, IC = 400 A, VCC = 500 V, Tvj = 150 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br> **Switching losses (typical), IGBT, T3 / T4** E = f(RG) VGE = ±15 V, IC = 400 A, VCC = 500 V **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 60 350<br>300<br>50<br>250<br>40<br>200<br>30<br>150<br>20<br>100<br>10<br>50<br>0 0<br>0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-02-29 14 **F3L500R12W3H7_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** **==> picture [540 x 628] intentionally omitted <==** **----- Start of picture text -----**<br> Reverse bias safe operating area (RBSOA), IGBT, T3 / Transient thermal impedance, IGBT, T3 / T4<br>T4 Zth = f(t)<br>IC = f(VCE)<br>RGoff = 22 Ω, VGE = ±15 V, Tvj = 150 °C<br>1000 1<br>900<br>800<br>700<br>600<br>500 0.1<br>400<br>300<br>200<br>100<br>0 0.01<br>0 100 200 300 400 500 600 700 800 900 1000 0.001 0.01 0.1 1 10<br>Forward characteristic (typical), Diode, D3 / D4 Switching losses (typical), Diode, D3 / D4<br>IF = f(VF) Erec = f(IF)<br>RGon = 0.68 Ω, VCE = 500 V<br>1000 20<br>900<br>800<br>15<br>700<br>600<br>500 10<br>400<br>300<br>5<br>200<br>100<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 100 200 300 400 500 600 700 800 900 1000<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-02-29 15 **F3L500R12W3H7_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Characteristics diagrams** ## **Switching losses (typical), Diode, D3 / D4** Erec = f(RG) ## **Transient thermal impedance, Diode, D3 / D4** ## Zth = f(t) ## VCE = 500 V, IF = 500 A **==> picture [540 x 557] intentionally omitted <==** **----- Start of picture text -----**<br> 20 1<br>15<br>10 0.1<br>5<br>0 0.01<br>0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0.001 0.01 0.1 1 10<br>Temperature characteristic (typical), NTC-Thermistor<br>R = f(TNTC)<br>100000<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-02-29 16 **F3L500R12W3H7_H11 EasyPACK[™] module** **8 Circuit diagram** **==> picture [105 x 47] intentionally omitted <==** ## **8 Circuit diagram** **==> picture [541 x 636] intentionally omitted <==** **----- Start of picture text -----**<br> P1<br>X5<br>G4 E4 J NTC<br>T4 T1<br>D3 D1<br>G1 X4<br>X2<br>E1<br>X1<br>X3<br>T2<br>D4 D2<br>T3 G2<br>E3 G3<br>E2<br>N1<br>Figure 1<br>9 Package outlines<br>dimensioned for EJOT Delta PT WN5451 25<br>choose length according to pcb thickness<br>max. screw-in depth 8,5mm<br>4x 4x n 3,5 pcb hole pattern<br>( n 4,214)<br>2x dimensioned for M5 screw<br>26 P1 E2 N1 X5 X4<br>24<br>20,8<br>17,6 G2<br>14<br>4,8 G1 E1<br>0 4,80 E4 X3<br>14 14,411,28 X2 G4 E3 G3<br>20,8<br>24<br>26 X1<br>(99,3 ` 0,1) Distance of threaded holes in heat sink<br>110 ` 0,45<br>- Details about hole specification for contacts refer to AN2009-01 chapter 2<br>- Diameters of drill n 1,15mm<br>- Copper thickness in hole 25~50um<br>recommended pcb design height<br>12<br>n<br>2x according to screw head washer<br>3,414)<br>n (<br>47,4 0 47,4 44,43 36,08 32,88 29,68 23,28 20,08 7,28 4,08 0 4,08 7,28 10,48 13,68 16,88 20,08 23,28 29,68 32,88 36,08 44,43<br>0,1<br> ` (12)<br>12,2 (16,4) W00220026.03<br>**----- End of picture text -----**<br> ## **Figure 2** Datasheet Revision 1.00 2024-02-29 17 **F3L500R12W3H7_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Module label code** ## **10 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.00 2024-02-29 18 **F3L500R12W3H7_H11 EasyPACK[™] module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2023-03-21|Initial version| |1.00|2024-02-29|Final datasheet| Datasheet Revision 1.00 2024-02-29 19 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2024-02-29 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2024 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABF401-002** Infineon Technologies in customer’s applications. ## 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Updated at April 28, 2026
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