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F3L400R12PT4B26BOSA1
IGBT Module, Three level Inverter, 600 A, 1.75 V, 2.15 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Product Range: EconoPACK 4
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 2.15kW
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 600A
- Power Dissipation Pd: 2.15kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 600A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 202.87 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT-Module IGBT-modules
## F3L400R12PT4_B26
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VCES = 1200V<br>IC nom = 400A / ICRM = 800A<br>**----- End of picture text -----**<br>
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1
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules F3L400R12PT4_B26
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
**IGBT,�T1�/�T4�/�IGBT,�T1�/�T4 Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>F3L400R12PT4_B26<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:MK<br>approvedby:MK<br>dateofpublication:2013-11-11<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,T1/T4/IGBT,T1/T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>400<br>600<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>800<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>2150<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 400 A, VGE= 15 V<br>IC= 400 A, VGE= 15 V<br>IC= 400 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 15,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>3,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,8<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>25,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>1,35<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>td on<br>0,20<br>0,22<br>0,23<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>tr<br>0,11<br>0,12<br>0,12<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>td off<br>0,40<br>0,48<br>0,50<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>tf<br>0,07<br>0,10<br>0,11<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 400 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 2650 A/µs (Tvj= 150°C)<br>RGon= 1,5Ω<br>Eon<br>8,75<br>13,0<br>13,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 400 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 2300 V/µs (Tvj= 150°C)<br>RGoff= 1,5Ω<br>Eoff<br>18,0<br>26,0<br>28,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>2200<br>1900<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤10 µs,<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,07<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,046<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules F3L400R12PT4_B26
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Diode,�D2�/�D3�/�Diode,�D2�/�D3**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|400|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|800|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|6700<br>6150<br>|A²s<br>A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 400 A, VGE= 0 V<br>IF= 400 A, VGE= 0 V<br>IF= 400 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 400 A, - diF/dt = 2650 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||145<br>205<br>215||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 400 A, - diF/dt = 2650 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||13,5<br>26,0<br>28,5||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 400 A, - diF/dt = 2650 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||3,40<br>6,35<br>7,15||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,22|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,077||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
date�of�publication:�2013-11-11 revision:�2.0
prepared�by:�MK approved�by:�MK
3
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules F3L400R12PT4_B26
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
**IGBT,�T2�/�T3�/�IGBT,�T2�/�T3 Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>F3L400R12PT4_B26<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:MK<br>approvedby:MK<br>dateofpublication:2013-11-11<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 0°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>400<br>360<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>800<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>880<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 400 A, VGE= 15 V<br>IC= 400 A, VGE= 15 V<br>IC= 400 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,00<br>2,10<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 4,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>3,20<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>18,5<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,57<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>td on<br>0,08<br>0,10<br>0,10<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>tr<br>0,09<br>0,10<br>0,10<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>td off<br>0,35<br>0,37<br>0,38<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 400 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>tf<br>0,08<br>0,11<br>0,11<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 400 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, di/dt = 3300 A/µs (Tvj= 150°C)<br>RGon= 1,5Ω<br>Eon<br>6,30<br>9,40<br>11,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 400 A, VCE= 300 V, LS= 35 nH<br>VGE= ±15 V, du/dt = 3350 V/µs (Tvj= 150°C)<br>RGoff= 1,5Ω<br>Eoff<br>20,0<br>23,5<br>24,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1800<br>1400<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤10 µs,<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,17<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,074<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
4
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules F3L400R12PT4_B26
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Diode,�D1�/�D4�/�Diode,�D1�/�D4**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|400|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|800|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|15500<br>11500<br>|A²s<br>A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 400 A, VGE= 0 V<br>IF= 400 A, VGE= 0 V<br>IF= 400 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,85<br>1,90|2,30|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 400 A, - diF/dt = 3300 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||255<br>310<br>325||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 400 A, - diF/dt = 3300 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||29,0<br>56,0<br>65,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 400 A, - diF/dt = 3300 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||8,70<br>16,5<br>19,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,16|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,056||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�MK date�of�publication:�2013-11-11 approved�by:�MK revision:�2.0
5
IGBT-Module IGBT-modules
## F3L400R12PT4_B26
|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||25,0<br>12,5||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||11,0<br>7,0||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität||LsCE||38||nH|
|Modulleitungswiderstand, Anschlusse -|||||||
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||0,75||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee eee~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>-40<br>125<br>M<br>3,00<br>-<br>6,00<br>~~eee~~||||°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M6<br>- Montage gem. gultiger Applikationsschrift<br>Screw M6<br>- Mounting according to valid application note|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||400||g|
6
## IGBT-Module IGBT-modules
## F3L400R12PT4_B26
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IC =f(V CE) IC =f(V CE)<br>VGE ts Vv Tvj = i50°C<br>800 a | / ra 800 es<br>Tvj = 25°C VGE = 19V<br>720 Tvj = 125°C 720 F VGE = 17V oR<br>E Tvj = 150°C OL) VGE = 15V |<br>VGE = 13V<br>640 es i se 640 || VGE = 11V Ea7rann<br>VGE = 9V<br>po p e e<br>560 560<br>480 480<br>eeSeeve ee ee eeeeeeV’ F; ceeee<br>400 400<br>ae eee eee) Zee<br>320 320<br>240 240<br>|Pe| eef oe eeeeri‘77 |<br>160 160<br>80 80<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
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IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =15 Ω ,R Goff =1.5 Ω ,V CE =300V<br>800 80<br>Tvj = 25°C Eon, Tvj = 125°C<br>720 H Tvj o] = 125°C a [e Eon, T es vj = 150°C | ee<br>Tvj = 150°C 70 Eoff, Tvj = 125°C<br>Ti | Ht ttt Et<br>Eoff, Tvj = 150°C<br>ee e | PEP<br>640<br>60<br>C C A) Pe e<br>560<br>50<br>480<br>Fe Pt tT ty ty<br>400 rT aTT |)[jiRYT 40 PTPET TTETTTTTETTeETLereet |<br>ee<br>320<br>30<br>y ae<br>Ae SERRRREEP Zany ane<br>240<br>ee seeseer eee<br>20<br>eee<br>160<br>Pt cae aeecee<br>Pra 10 ep| | e ele| eteco tT<br>80 Per) epee<br>0 nes 0 Peet tT TT TT TT TT<br>5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600 700 800<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-Module IGBT-modules
## F3L400R12PT4_B26
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Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =400A,V CE =300V<br>80 0,1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eon, Tvj = 150°C<br>70 | Eoff, Tvj = 125°C FT tT | | tt dd |<br>| Eoff, Tvj = 150°C PTT TL a ee |<br>60<br>TT St T TTT tt i tt tt PLEAAACETTEETH<br>50 Pt ey ITY III<br>| Pt Et | TT ee re vi<br>FERRERS LUI UIEELH<br>40 PT TTT tT cere EE 0,01 LL<br>Pt tt | | | vr EE fomnnpan<br>30 P|Sn| | | joeyae| | dleeee es ooee ee |<br>20<br>Sapp20aSRR ESREEEEE a | a| | ||<br>ee || || i: 1 2 3 4<br>10 ri[K/W]: 0,00481 0,00743 0,05654 0,00346<br>τ i[s]: 0,00048 0,00808 0,03994 4,14691<br>0 COCSEEeeUuEEEEEEEEFit TT TT tT tt | | 0,001 aiiLUT oe ETT ELL |<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>
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IC =f(V CE) IF =f(V F)<br>VGE rT IBVLR Goff =1.5 Ω ,T vj =150°C<br>900 800<br>IC, Modul Tvj = 25°C<br>800 IC, Chip 720 Tvj = 125°C<br>EID) e Tvj = 150°C o<br>640<br>700<br>TTT LLL p o | ide<br>560<br>600<br>480<br>500<br>CATT) HA gh<br>400<br>PPLEELLE |<br>400<br>| SERRE eee<br>320<br>300<br>ee eee aeeee<br>240<br>PELE ELLER i<br>200<br>160<br>100 PPLEELLE ELE 80 PELE EEE<br>PLETE EEE napeae 74nnnnne<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
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IGBT-Module IGBT-modules
## F3L400R12PT4_B26
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Erec =f(I F) Erec =f(R G)<br>RGon JM. Ω ,V CE =300V IF = 400A, V CE = 300 V<br>10 10<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>9 Erec, Tvj = 150°C 9 Erec, Tvj = 150°C<br>a ee ee<br>8 ee 8 ne eeeeennne<br>7 e e 7 u<br>6 a ee 6 eee<br>Pe ENR EE<br>5 5<br>YA aN | =e<br>4 4<br>EVA HELPS<br>3 3<br>Py ALLE PSL<br>2 2<br>1 1<br>0 0<br>0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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ZthJC =f IC =f(V CE)<br>(t) VGE We<br>1 800<br>H ZthJC : Diode S eo Tvj = 25°C ve<br>Le Tt ioo Ty]ns ot i 720 eee Tvj = 125°C ee j ae<br>Tvj = 150°C<br>| a ll 640 E_ TTI_ be ye<br>PINE AE 560 PEL TT TELA Lae ty<br>PLEIN | CHIN EMEeS Je’<br>480<br>0,1 400<br>rT | TT TT TTT TTT TTT a<br>STeeCOA200 |Iee iyel 320240 epPE] TL |iAAfe“ E TEEpe<br>PACU TET ETT ET 160 PTTL | WELT EL PE<br>i: 1 2 3 4<br>SEAN ||| AG r τ ii[K/W]: [s]: 0,02066 0,00031 0,03561 0,0085 0,14341 0,04141 0,02234 0,9406 80 SUS OReeeneneee<br>a LIAL EEL EEE EE<br>0,01 0<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0<br>t [s] VCE [V]<br> [K/W]thJC [A]IC<br>Z<br>**----- End of picture text -----**<br>
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## IGBT-Module IGBT-modules F3L400R12PT4_B26
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IC =f(V CE) IC =f(V GE)<br>Tvj = {Sorc VCE OO Vv<br>800 800<br>VGE = 19V Tvj = 25°C<br>r V e GE = 17V eee ——EL} Tvj = 125°C<br>700 I VGE = 15V 700 Tvj = 150°C | I<br>I VGE = 13V EE Aa et TET I i ae<br>VGE = 11V<br>600 I VGE = 9V te a Te rT 600 p—— | |<br>PT Ht Ala Ta pt t<br>500 PELPTT TTTttAefaa etEE 500 ee a ee ee<br>400 PLL TE ee TT 400 Pot |<br>PLT A | ee r eee<br>tL rr eT TT ET Potte<br>300 300<br>PELL ere ee eee<br>|<br>200 PELL | aeAe TE EE E EE 200 Potee| | UA a<br>BERR? 7/42c ee po | | TA |<br>100 BEG) ZAR 100 re Aree<br>Filia ttt tT re ae<br>0 TIA TTT TE 0 p oet| UT |<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5 6 7 8 9 10 11 12 13<br>VCE [V] VGE [V]<br>Schaltverluste IGBT, T2 / T3 (typisch) Schaltverluste IGBT, T2 / T3 (typisch)<br>switching losses IGBT, T2 / T3 (typical) switching losses IGBT, T2 / T3 (typical)<br>Eon =f(l),E C off =f(I C) Eon =f(R),E G off =f(R G)<br>VGE =415V,R Gon =15 Ω ,R Goff =1.5 Ω ,V CE =300V VGE =+15V,1 C =400A,V CE =300V<br>100 100<br>Eon, Tvj = 125°C Eon, Tvj = 125°C<br>90 Eon, Tvj = 150°C 90 Eon, Tvj = 150°C<br>Eoff, Tvj = 125°C Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C Eoff, Tvj = 150°C<br>80 80<br>70 70<br>60 60<br>7 ee R E<br>50 50<br>pt ee ee<br>40 ee 40<br>ee ee ee cee<br>BR<br>30 30<br>& An eee dense coe<br>ae<br>20 20<br>eae ee eeQe e<br>10 10<br>ee ee<br>aT |<br>0 0<br>ce ee<br>0 100 200 300 400 500 600 700 800 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15<br>IC [A] RG [ Ω ]<br> [A] [A]<br>IC IC<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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## F3L400R12PT4_B26
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Z rans thJC impedance IGBT, T2/ T3 I er C CE bias ) safe operating area IGBT, T2 / T3 (RBSOA)<br>VGE =+15V,R Goff =1.5 Ω ,T vj =150°C<br>1 900<br>ZthJC : IGBT IC, Modul<br>Sea a e ee ee ll 800700 L PTT IC, Chi TT p ELEY L A<br>HHH<br>ne<br>0,1 600<br>ee<br>500<br>YT a<br>6| Tt TTT TTT eT TTT 400 PLL EL EP LLY\<br>0,01 300<br>PeSeHHH 9 TTA\<br>eea ee ee ll 200<br>i: 1 2 3 4<br>ae ri[K/W]: 0,01921 0,12312 0,02338 0,00837 | | 100 SK<br>| τ i[s]: 0,00113 0,03104 I 0,17309 3,25128 |<br>Amo l LLL<br>0,001 0<br>0,001 0,01 0,1 1 10 0 100 200 300 400 500 600 700<br>t [s] VCE [V]<br>Durchlasskennlinie der Diode, D1 / D4 (typisch) Schaltverluste Diode, D1 / D4 (typisch)<br>forward characteristic of Diode, D1 / D4 (typical) switching losses Diode, D1 / D4 (typical)<br>IF =f(V F) Erec =f(l F)<br>RGon = { 5 Ω ,V CE =300V<br>800 30<br>Tvj = 25°C 28 Erec, Tvj = 125°C<br>Tvj = 125°C Erec, Tvj = 150°C<br>pao S$ fF<br>700 Tvj = 150°C 26<br>FEJee JE<br>Po o tt 24 a e e eee<br>600<br>22<br>ptf tt et Oe ea<br>ptt ttt ttt ye 20 Pb<br>500 S D a<br>18<br>Fe ee ee ee<br>a ee<br>16<br>400<br>So 14 ee<br>12<br>300 SEE oACee | Oe<br>RRRRREREAREEH eZ<br>10<br>es 8 a ae ee ee<br>200<br>Pi} tt tt tT iy tt y<br>rT oT Pe TT 6 7} | |tT<br>100 PT | TE Ler ET 4 Pot ft tt<br>2<br>P| tT er TT PF | | | tt<br>0 PEL de r EEE 0 FP | [| | [ [ {| [|<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 0 100 200 300 400 500 600 700 800<br>VF [V] IF [A]<br> [K/W]thJC [A]IC<br>Z<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>
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## IGBT-Module IGBT-modules
## F3L400R12PT4_B26
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Erec =f(R G) ZthJC =f(t<br>IF = 400A, V CE = 300 V °<br>24 SS 1 Pt i TTT<br>Erec, Tvj = 125°C ZthJC : Diode<br>22 Erec, Tvj = 150°C eee H— Et<br>rn | ee<br>Mo ot 1 Ttit Titi ft tii FT Till<br>20<br>18 TTT dd em<br>SP PSEEEPP TT TTT TTT EEETy a PINE ETI eeEET FETT]ll<br>16<br>14 PT ft IEAIIE LTT<br>12 PE ee| Pe Pe 0,1 aT) Pearin<br>EEee<br>108 PTTPTT | | dt tt LTNLSAL PS [PS] a (|YT TTT TTT ZTA TTTTT TTT0TTT EsTTT] TTTEt<br>6 TTT TT TTdT yyTTT TTTLLL a PINE<br>4 PLE EEE EEE al ||| SAUEEE, ETI ETT ]<br>i: 1 2 3 4<br>ri[K/W]: 0,02046 0,10956 0,02205 0,00681<br>2 τ i[s]: 0,00108 0,03036 0,16873 3,29829<br>SERRRRPT ERE Ree a TOMI On|<br>0 0,01<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R=f(T)<br>100000<br>—— Rtyp ————————<br>Rar ce r<br>a e s es es<br>a e e<br>a ee ee<br>10000<br>Ki—————————|p tt |<br>[_<br>a Ne es es es<br>a NS<br>pp Nf<br>1000 EaaNEEEe<br>poNT<br>eea COes es<br>a ee<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
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Technische�Information�/�Technical�Information<br>IGBT-Module<br>IGBT-modules F3L400R12PT4_B26<br>Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�circuit_diagram_headline<br>J<br>Gehäuseabmessungen�/�package�outlines<br>prepared�by:�MK date�of�publication:�2013-11-11<br>approved�by:�MK revision:�2.0<br>**----- End of picture text -----**<br>
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Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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