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F3L400R10W3S7B11BPSA1
IGBT Module, Three level Inverter, 235 A, 1.61 V, 20 mW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK TRENCHSTOP
- IGBT Technology: IGBT 7 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 20mW
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Continuous Collector Current: 235A
- Collector Emitter Voltage Max: 950V
- Collector Emitter Saturation Voltage: 1.61V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 109.78 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## F3L400R10W3S7_B11
**==> picture [117 x 23] intentionally omitted <==**
**----- Start of picture text -----**<br>
VCES = 950V<br>IC nom = 400A / ICRM = 800A<br>**----- End of picture text -----**<br>
- 3-Level-Applikationen
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- Trenchstop[TM]
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- 3-level-applications
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- • Trenchstop[TM]
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## **Digit**
Datasheet www.infineon.com
2020-02-27
F3L400R10W3S7_B11
**==> picture [86 x 38] intentionally omitted <==**
|**IGBT,T1/T4/IGBT,T1/T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,T1/T4/IGBT,T1/T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|950|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|400|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|235|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|800|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 150 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,40<br>1,48<br>1,50|1,61|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 6,50 mA, VCE= VGE, Tvj= 25°C|VGEth|4,35|5,10|5,85|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,90||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,75||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||25,2||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,078||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 950 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,07|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,089<br>0,092<br>0,093||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,022<br>0,026<br>0,027||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,27<br>0,34<br>0,36||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,041<br>0,075<br>0,088||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>di/dt = 5800 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||5,00<br>7,05<br>7,50||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>du/dt = 4000 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||4,30<br>7,16<br>8,00||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 600 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||1200||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,224||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
2
V�3.0 2020-02-27
Datasheet
F3L400R10W3S7_B11
**==> picture [86 x 38] intentionally omitted <==**
|**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|950|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|400|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|380|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|800|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 150 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,07<br>1,04<br>1,02|1,14|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 6,50 mA, VCE= 20 V, Tvj= 25°C|VGEth|4,15|4,90|5,65|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||4,10||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,75||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||49,2||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,228||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 950 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,07|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,189<br>0,191<br>0,192||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,026<br>0,032<br>0,034||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,76<br>0,92<br>0,94||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,23<br>0,44<br>0,49||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>di/dt = 5200 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||3,10<br>4,00<br>4,30||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>du/dt = 1200 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||24,5<br>35,3<br>37,9||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 600 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||1200||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,200||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
3
V�3.0 2020-02-27
Datasheet
F3L400R10W3S7_B11
**==> picture [86 x 38] intentionally omitted <==**
|**IGBT,T5/T6/IGBT,T5/T6**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,T5/T6/IGBT,T5/T6**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|950|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|200|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|140|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|400|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 150 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VCE sat||1,68<br>1,88<br>1,92|1,98|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 3,25 mA, VCE= VGE, Tvj= 25°C|VGEth|4,35|5,10|5,85|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,45||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,5||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||12,6||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,039||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 950 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,05|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||0,086<br>0,095<br>0,096||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||0,02<br>0,022<br>0,023||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||0,18<br>0,22<br>0,23||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 150 A, VCE= 500 V<br>VGE= -15 / 15 V<br>RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||0,032<br>0,089<br>0,112||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>di/dt = 5300 A/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGon= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||5,00<br>6,43<br>6,79||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 150 A, VCE= 500 V, Lσ= 35 nH<br>du/dt = 6000 V/µs (Tvj= 150°C)<br>VGE= -15 / 15 V, RGoff= 3,9Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||3,73<br>6,35<br>7,26||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 600 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>tP ≤0 µs,|ISC||600||A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,340||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
V�3.0 2020-02-27
Datasheet
4
F3L400R10W3S7_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Diode,�D1�/�D4�/�Diode,�D1�/�D4 Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|950|950||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|200|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1620<br>1530|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||2,33<br>2,12<br>2,08|2,58|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 5300 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||119<br>173<br>189||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 5300 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||5,84<br>11,6<br>14,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 5300 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,70<br>3,62<br>4,53||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||0,460||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
**Diode,�D2�/�D3�/�Diode,�D2�/�D3 Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|950|950||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|200|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1620<br>1530|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||2,33<br>2,12<br>2,08|2,58|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||154<br>189<br>200||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||6,65<br>14,9<br>20,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 5200 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||2,39<br>6,24<br>7,49||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||0,552||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
V�3.0 2020-02-27
Datasheet
5
F3L400R10W3S7_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Diode,�D5-D6�/�Diode,�D5-D6**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|950|950||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|200|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1620<br>1530|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||2,33<br>2,12<br>2,08|2,58|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 5800 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||145<br>189<br>205||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 5800 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||7,70<br>15,0<br>18,7||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 5800 A/µs (Tvj=150°C)<br>VR= 500 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||2,59<br>5,01<br>6,44||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||0,490||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
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## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|3,2<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||9,6<br>5,8<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||8,8<br>4,7<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||15||nH|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|Schraube-Montagegem.gültigerApplikationsschrift<br>Screw-Mountingaccordingtovalidapplicationnote|M|1,30||1,50|Nm|
|Gewicht<br>Weight||G||78||g|
Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25 A rms per connector pin. IGBT- und Dioden-RthJH-Parameter mit einer Wärmeleitpaste λ Paste = 3.3 W/(m·K) gemessen IGBT- and diode- RthJH parameters measured with thermal grease of λ paste = 3.3 W/(m·K)
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**Ausgangskennlinie�IGBT,�T1�/�T4�(typisch) output�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VCE) VGE�=�15�V
**Ausgangskennlinienfeld�IGBT,�T1�/�T4�(typisch) output�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VCE) Tvj�=�150°C
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300 300<br>T T vj vj = 25°C = 125 ° C V V GE GE = 19V = 17V<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>250 250 VGE = 11V<br>VGE = 9V<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0,0 0,5 1,0 1,5 2,0 0,0 1,0 2,0 3,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
**Übertragungscharakteristik�IGBT,�T1�/�T4�(typisch) transfer�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VGE) VCE�=�20�V
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300<br>T T vj vj = 25°C = 125 ° C<br>Tvj = 150°C<br>250<br>200<br>150<br>100<br>50<br>0<br>4 5 6 7 8<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
**Schaltverluste�IGBT,�T1�/�T4�(typisch) switching�losses�IGBT,�T1�/�T4�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC)
VGE�=�±15�V,�RGon�=�3,9� Ω ,�RGoff�=�3,9� Ω ,�VCE�=�500�V
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18<br>E E on on , T , T vj vj = 125°C = 150 ° C<br>Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>15<br>12<br>9<br>6<br>3<br>0<br>0 50 100 150 200 250 300<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br>
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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =150A,V CE =500V VGE =415V,R Gon =39 Ω ,R Goff =39 Ω ,V CE =500V,T vj =150°C<br>30 10<br>E E on on , T , T vj vj = 125°C = 150 ° C 4 Y Z ———————i ttdon r eeee ee<br>Eoff, Tvj = 125°C 4 | t doff a es<br>Eoff, Tvj = 150°C “4 t f<br>25<br>1<br>20 a ee ee<br>15 0,1<br>ee ee<br>10 in ee —_e ———_—<br>0,01<br>Toe<br>5<br>0 0,001<br>0 10 20 30 40 0 50 100 150 200 250 300<br>RG [ Ω ] IC [A]<br>E [mJ] t [µs]<br>**----- End of picture text -----**<br>
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tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) ZthJH =f (t)<br>VGE =+15V,1 C =150A,V CE =500V,T vj = 150°C<br>10 a a a a 1 a ee<br>tdon ZthJH : IGBT<br>——| t r a HEHee| eeeeee<br>t doff<br>t f<br>1 0,1<br>eee fe<br>a eeA<br>0,1 0,01<br>Z<br>a<br>Zz<br>7<br>i: 1 2 3 4<br>ri[K/W]: 0,0046 0,0214 0,099 0,099<br>τ i[s]: 0,00058 0,00991 0,146 0,146<br>0,01 0,001<br>0 10 20 30 40 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>t [µs]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
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IC =f(V CE) C=f(V CE)<br>VGE =415V,R Goff =3,9 Ω ,T vj =150°C VGE =0V,T vj = 25°C,f = 100kHz<br>900 1000<br>I C , Modul 1 | C ies a a<br>IC, Chip Coes<br>800 E_ (a C res<br>100<br>700<br>600 10 Pfft<br>ett iT<br>500<br>400 Hn a ee ee<br>1 =e~~<br>300 \ Poe<br>A<br>N.<br>200<br>0,1<br>100 ee —————————<br>0 0,01<br>PERERA) = EERE<br>0 100 200 300 400 500 600 700 800 900 1000 0 10 20 30 40 50 60 70 80 90 100<br>VCE [V] VCE [V]<br>Gateladungs Charakteristik IGBT, T1 / T4 (typisch) Ausgangskennlinie IGBT, T2 / T3 (typisch)<br>gate charge characteristic IGBT, T1 / T4 (typical) output characteristic IGBT, T2 / T3 (typical)<br>VGE = f(Q G) IC =f(V CE)<br>IC =400A,T vj =25°C VGE =15V<br>15 300<br>VCC = 600 V T T vj vj = 25°C = 125 ° C<br>Tvj = 150°C<br>10 250<br>|<br>5 200<br>/<br>0 150 //<br>i]<br>-5 100<br>I<br>-10 50<br>yf<br>-15 0<br>0,0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1,0 0,0 0,5 1,0 1,5<br>QG [µC] VCE [V]<br> [A]<br>IC C [nF]<br> [V]<br> [A]<br>VGE IC<br>**----- End of picture text -----**<br>
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IC =f(V CE) IC =f(V GE)<br>Tvj = 150°C VCE =20V<br>300 300<br>V V GE GE = 19V = 17V HF | T T vj vj = 25°C = 125 ° C i!<br>VGE = 15V Tvj = 150°C<br>VGE = 13V<br>250 VGE = 11V 250<br>VGE = 9V ifai| ij<br>ef i |<br>ty | 1<br>t/j i]<br>200 jitHical : 200 |I I |<br>fli/ : ii |<br>150 150 i]<br>fi; 1 |<br>al / /<br>hi i |<br>A !<br>100 f yf 100 /<br>/]<br>y if/<br>/<br>i /<br>50 f 50 /<br>/ [/]<br>//<br>“ /<br>0 0<br>0,0 0,5 1,0 1,5 4,0 5,0 6,0 7,0 8,0<br>VCE [V] VGE [V]<br>Schaltverluste IGBT, T2 / T3 (typisch) Schaltverluste IGBT, T2 / T3 (typisch)<br>switching losses IGBT, T2 / T3 (typical) switching losses IGBT, T2 / T3 (typical)<br>Eon =f(l),E C off =f(I C) Eon =f(R),E G off =f(R G)<br>VGE =415V,R Gon =39 Ω ,R Goff =39 Ω ,V CE =500V VGE =+15V,1 C =150A,V CE =500V<br>60 50<br>E E on on , T , T vj vj = 125°C = 150 ° C EEonon, T, Tvjvj = 125°C = 150°C<br>Eoff, Tvj = 125°C E off , T vj = 125°C<br>Eoff, Tvj = 150°C Eoff, Tvj = 150°C<br>50<br>ro “aw ae a oo 40 Ee |<br>oe 7 ee A Se Ee<br>“ue<br>“ vw ee<br>o “<br>40 “oY<br>“oy<br>ey 30<br>“ / =<br>“ff a<br>“7 a<br>30 r/7 L =~<br>oy a<br>oe a“<br>errar 20 a Zz<br>A z<br>20 af ,<br>af Zz<br>“7 Z<br>yf 10 17<br>10 7<br>_ Ya<br>= G<br>0 0<br>0 50 100 150 200 250 300 0 10 20 30 40<br>IC [A] RG [ Ω ]<br> [A] [A]<br>IC IC<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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tdon =f(l),t=f(l)t C r C doff =f(l),t C f =f(l C) tdon =f{(R)t=f(R),t G r G doff =f(R),t=f(R G f G)<br>VGE =415V,R Gon =39 Ω ,R Goff =39 Ω ,V CE =500V,T vj =150°C VGE =+15V,1 C =300A,V CE =500V,T vj =150°C<br>100 EE———— tdon 10 oe tdon<br>t r t r<br>t doff t doff<br>t f t f<br>= 2<br>10<br>sana nnaaanal<br>a 1<br>\<br>a —————<br>. ~~, rrr|<br>1 Te a<br>0,1 =—<br>————————————_— To<br>0,1 ee<br>Za<br>0,01 0,01<br>0 50 100 150 200 250 300 0 10 20 30 40<br>IC [A] RG [ Ω ]<br>Transienter Warmewiderstand IGBT, T2 / T3 Sicherer Riickwarts-Arbeitsbereich IGBT, T2 / T3 (RBSOA)<br>transient thermal impedance IGBT, T2 / T3 reverse bias safe operating area IGBT, T2 / T3 (RBSOA)<br>ZthJH =f (t) IC =f(V CE)<br>VGE =415V,R Goff =3,9 Ω ,T vj =150°C<br>1 a eeee ee 900<br>ZthJH : IGBT I C , Modul<br>eee IC, Chip<br>PoHES| ee 800 =] TT]<br>TT -<br>700 |<br>|<br>0,1 600<br>eee rie imemeatiimemeeat<br>PN oe 500<br>400<br>0,01 300<br>200<br>i: 1 2 3 4<br>ri[K/W]: 0,0044 0,0191 0,0882 0,0883 100<br>τ i[s]: 0,00058 0,00991 0,146 0,146<br>0,001 0<br>0,001 0,01 0,1 1 10 0 100 200 300 400 500 600 700 800 900 1000<br>t [s] VCE [V]<br>t [µs] t [µs]<br> [K/W]thJH [A]IC<br>Z<br>**----- End of picture text -----**<br>
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## **Kapazitäts�Charakteristik�IGBT,�T2�/�T3�(typisch) capacity�characteristic�IGBT,�T2�/�T3�(typical)**
**Gateladungs�Charakteristik�IGBT,�T2�/�T3�(typisch) gate�charge�characteristic�IGBT,�T2�/�T3�(typical)** VGE�=�f(QG) IC�=�400�A,�Tvj�=�25°C
C�=�f(VCE) VGE�=�0�V,�Tvj�=�25°C,�f�=�100kHz
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1000 15<br>C ies VCC = 600 V<br>Coes<br>C res<br>10<br>100<br>5<br>10<br>0<br>1<br>-5<br>0,1<br>-10<br>0,01 -15<br>0 10 20 30 40 50 60 70 80 90 100 0,0 1,0 2,0 3,0 4,0 5,0<br>VCE [V] QG [µC]<br>Ausgangskennlinie�IGBT,�T5�/�T6�(typisch) Ausgangskennlinienfeld�IGBT,�T5�/�T6�(typisch)<br>output�characteristic�IGBT,�T5�/�T6�(typical) output�characteristic�IGBT,�T5�/�T6�(typical)<br>C�=�f�(VCE)�=�f�(VCE)CE)) IC�=�f�(VCE)<br>GE�=�15�V�=�15�V Tvj�=�150°C<br>300 300<br>T T vj vj = 25°C = 125 ° C V V GE GE = 19V = 17V<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>250 250 VGE = 11V<br>VGE = 9V<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0,0 1,0 2,0 3,0 0,0 1,0 2,0 3,0 4,0<br>VCE [V] VCE [V]<br> [V]<br>GE<br>C [nF] V<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
**Ausgangskennlinie�IGBT,�T5�/�T6�(typisch) output�characteristic�IGBT,�T5�/�T6�(typical)** IC�=�f�(VCE)�=�f�(VCE)CE)) VGE�=�15�V�=�15�V
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IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =39 Ω ,R Goff +=39 Ω ,V CE =500V<br>300 15<br>T T vj vj = 25°C = 125 ° C EEonon, T, Tvjvj = 125°C = 150°C<br>Tvj = 150°C E off , T vj = 125°C<br>Eoff, Tvj = 150°C<br>250<br>12<br>fi ao<br>200<br>9<br>150<br>f ee fl<br>if Lf<br>6<br>100<br>i Poa<br>ai 3 +<br>ff wf,<br>50<br>a<br>0 0<br>4 5 6 7 8 9 0 50 100 150 200 250 300<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =150A,V CE =500V VGE =415V,R Gon =39 Ω ,R Goff =39 Ω ,V CE =500V,T vj =150°C<br>30 10 a a<br>E E on on , T , T vj vj = 125°C = 150 ° C ttdon r<br>Eoff, Tvj = 125°C t doff<br>25 Eoff, Tvj = 150°C ‘ t f<br>Z<br>FZ<br>Fm<br>A<br>a,<br>20 Oo 1<br>7<br>ww<br>15<br>sO nn ie<br>J Z A<br>10 0,1<br>Va y, wee Le \<br>5<br>|<br>0 0,01<br>0 10 20 30 40 0 50 100 150 200 250 300<br>RG [ Ω ] IC [A]<br>E [mJ] t [µs]<br>**----- End of picture text -----**<br>
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tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) ZthJH =f (t)<br>VGE =+15V,1 C =150A,V CE =500V,T vj = 150°C<br>1 1<br>tdon ZthJH : IGBT<br>ee Se<br>tr<br>tdoff<br>tf<br>= ee fereesti etmcet ft oeetectil eee<br>a<br>wetvee nl<br><an eZ<br>| 0,1 Se TL<br>SE eo<br>nL<br>iP /. ne<br>0,1<br>- 0,01 VA<br>7 SS<br>/ ee<br>i: 1 2 3 4<br>ri[K/W]: 0,0075 0,0325 0,15 0,15<br>τ i[s]: 0,00058 0,00991 0,146 0,146<br>0,01 tee 0,001 UN TT VT<br>0 10 20 30 40 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT, T5 / T6 (RBSOA) Kapazitats Charakteristik IGBT, T5 / T6 (typisch)<br>reverse bias safe operating area IGBT, T5 / T6 (RBSOA) capacity characteristic IGBT, T5 / T6 (typical)<br>IC =f(V CE) C=f(V CE)<br>VGE NS V.R Goff =3,9 Ω ,T vj =150°C VGE OO V.T vj = 25°C, f = 100kHz<br>500 100<br>IC, Modul Cies<br>IC, Chip C oes<br>C res<br>400<br>Lp | | | tT<br>10 aee eee<br>300<br>SSSceacae=<br>1<br>Ree<br>(i<br>PS<br>200 a<br>0,1 \<br>rere<br>100<br>0 0,01<br>0 PERE 100 200 300 400 500 600 700 800 900 1000 0 eeePPPEPESSS= 10 20 30 oe 40 oe 50 ee 60 ooo 70 80 90 100<br>VCE [V] VCE [V]<br> [K/W]<br>t [µs]<br>thJH<br>Z<br> [A]<br>IC C [nF]<br>**----- End of picture text -----**<br>
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VGE = f(Q G) IF =f(V F)<br>IC =200A,T vj =25°C<br>15 300<br>VCC = 600 V T T vj vj = 25°C = 125 ° C<br>Tvj = 150°C<br>10 250<br>i1<br>i<br>5 200 it<br>itI<br>‘i<br>i!/<br>0 150 fi<br>I!i<br>ii<br>it<br>-5 / 100 (i 7<br>fi<br>ff<br>e/<br>-10 50 “ul<br>af<br>YY<br>“we<br>rs<br>-15 0 iad<br>0,0 0,1 0,2 0,3 0,4 0,5 0,0 1,0 2,0 3,0 4,0<br>QG [µC] VF [V]<br> [V]<br> [A]<br>VGE IF<br>**----- End of picture text -----**<br>
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Erec =f il F) Erec =f(R G)<br>RGon =3,9 Ω ,V CE =500V IF =150A,V CE =500V<br>8 6<br>EErecrec, T, Tvjvj = 125°C = 150°C E E rec rec , T , T vj vj = 125°C = 150 ° C<br>a<br>a“<br>6 oO - \ |<br>4<br>ne 7 \\<br>7 7 \<br>‘<br>7 [r]<br>4 L [7] ~Q<br>/ ~~<br>vo 77 2 _—< ~~ >~{ TS<br>7<br>}<br>2<br>|<br>0 0<br>0 50 100 150 200 250 300 0 10 20 30 40<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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ZthJH =f (t) IF =f(V F)<br>1 300<br>ST ZthJH : Diode Tvj = 25°C°<br>Tvj = 125 C<br>ea] UE Tvj = 150°C<br>250<br>oe th i<br>PE Teri ETT i<br>u<br>0,1 va 200 i!<br>Pt i!<br>/<br>Patiilignmaiitiietmastiitmaail4 i! i!<br>150 fi<br>ii<br>i<br>fi<br>0,01 100<br>SSE f<br>et cl f<br>50<br>ii 0 y,<br>i: 1 2 3 4<br>ri[K/W]: 0,025 0,114 0,16 0,161 af<br>τ i[s]: 0,000563 0,0126 0,103 0,103 ao<br>MTT anné<br>0,001 0<br>0,001 0,01 0,1 1 10 0,0 1,0 2,0 3,0 4,0<br>t [s] VF [V]<br>Schaltverluste Diode, D2 / D3 (typisch) Schaltverluste Diode, D2 / D3 (typisch)<br>switching losses Diode, D2 / D3 (typical) switching losses Diode, D2 / D3 (typical)<br>Erec =f (I F) Erec =f(R G)<br>RGon =3,9 Ω ,V CE =500V IF =150A,V CE =500V<br>12 10<br>E E rec rec , T , T vj vj = 125°C = 150 ° C EErecrec, T, Tvjvj = 125°C = 150°C<br>10<br>8<br>L [_]<br>Lo<br>8 al “ | aN “N<br>~<br>6<br>6<br>4<br>4 eee ~™ ~<br>2<br>2<br>0 0<br>0 50 100 150 200 250 300 0 10 20 30 40<br>IF [A] RG [ Ω ]<br> [K/W]thJH [A]IF<br>Z<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
17
Datasheet
2020-02-27
F3L400R10W3S7_B11
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ZthJH =f (t) IF =f(V F)<br>1 300<br>Sa ZthJH : Diode Tvj = 25°C°<br>Tvj = 125 C<br>eee Tvj = 150°Cvj = 150°C = 150°C<br>eee ee<br>250<br>eo i<br>PI a TT ETT i<br>0,1 N20i 200 i!uu<br>PTA i fi<br> TA TT i<br>At f<br>W4 150 fi<br>ii<br>i<br>0,01 100<br>SSE fiff<br>“i<br>ii 0 50 vyaa<br>i: 1 2 3 4<br>ri[K/W]: 0,021 0,1 0,215 0,216<br>τ i[s]: 0,0005 0,0114 0,112 0,112 ao<br>AG<br>Dh ae<br>0,001 0<br>0,001 0,01 0,1 1 10 0,0 1,0 2,0 3,0 4,0<br>t [s] VF [V]F [V] [V]<br>Schaltverluste Diode, D5-D6 (typisch) Schaltverluste Diode, D5-D6 (typisch)<br>switching losses Diode, D5-D6 (typical) switching losses Diode, D5-D6 (typical)<br>Erec =f il F) Erec =f(R G)<br>RGon {4 Ω ,V CE =500V IF = 180A, V CE = 500 V<br>15 8<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>/ |<br>12<br>6 \<br>SS<br>9<br>4<br>6<br>2<br>3 easia _“N 3<br>0 0<br>0 50 100 150 200 250 300 0 10 20 30 40<br>IF [A] RG [ Ω ]<br> [K/W]thJH [A]IFF<br>Z<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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300<br>Tvj = 25°C° Tvj = 125 vj = 25°C° vj = 125 = 25°C° = 125 ° C<br>Tvj = 150°Cvj = 150°C = 150°C<br>250<br>i<br>i<br>200 i!uu<br>i fi<br>i<br>f<br>150 fi<br>ii<br>i<br>100<br>fiff<br>“i<br>50<br>vyaa<br>ao<br>AG<br>ae<br>0<br>0,0 1,0 2,0 3,0 4,0<br>VF [V]F [V] [V]<br>IF [A]IFF<br>**----- End of picture text -----**<br>
18
Datasheet
2020-02-27
F3L400R10W3S7_B11
ZthJH
NTC)
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1 TTI 7. 7ITTI) 7 |) °&| | 11D 100000<br>ZthJH : Diode<br>fe po<br>Poae aee ee<br>PIE Dall 10000<br>At TTT Tl N<br>0,1 UATESSS UI | SSNN<br>A eeoeee ~~<br>PYTT<br>PZT TTP 1000 PN<br>ee<br>a a ee<br>0,01 po<br>Pt 100 pS<br>Seimei a a a ee<br>| aSSa<br>i: 1 2 3 4<br>ri[K/W]: 0,029 0,121 0,17 0,17<br>τ i[s]: 0,000563 0,0126 0,103 0,103<br>0,001 10<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TNTC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJH<br>Z<br>**----- End of picture text -----**<br>
19
Datasheet
2020-02-27
F3L400R10W3S7_B11
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dimensioned for EJOT Delta PT WN5451 25<br>B choose length according to pcb thickness 4x 0,25 A B C ( 2,3) Dome 3,5 4x pcb hole pattern<br>4x<br>= (e111 1 & 2<br>26 DC+ N N DC-<br>24 NTC1<br>\ \ > 00000000088 | @808800000 8| s = 20,817,6 OR E4 NTC2 > \<br>| 14 L A & || |Iesss l929 9 900@Q )ec09090|eq | pojo oe d0sG)so000e0 o)| 000 | \S)5 ) . o 14,4 I i eeemri pt irr G4 j \i<br>r y 8 88See0san n | S ossen0sooa| — | = \ ! Peri di}titta | |<br>0 0<br>pe, possecs o c t e | pobs cee e cs e NL pH 4,88 C1 G1 pe E1 G5 E5 G6 E6 C2 E3G3 |<br>14<br>4+ fe llle e gess eooco @) | bitit Gf fi iid /<br>20,8 G2<br>26 24 E2 AC AC<br>4 |<br>109,9 0,45<br>C HEEL SOU<br>O A<br>___ WIV zy T\ T/T<br>recommended design hight<br>,2)<br>,4)<br>ABC<br>0,25<br>2x<br>0,1 2x 12<br>5,4 2x according to screw head washer<br>0,45<br>62<br>49,7 47,4 44,4 0 44,4 47,4 49,7<br>29,68 26,48 23,28 20,08 16,88 13,68 10,48 7,28 4,08 0 4,08 7,28 10,48 13,68 16,88 20,08 23,28 26,48 29,68 36,08<br>0,1<br>12,2 (12) (16,4)<br>**----- End of picture text -----**<br>
20
Datasheet
2020-02-27
## **Trademarks**
## **WARNHINWEIS**
## **WARNINGS**
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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