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F3L400R10N3S7FC1BPSA1
IGBT Module, Three level Inverter, 105 A, 1.38 V, 20 mW, 175 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPACK Series
- IGBT Technology: IGBT7 [Trench Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 20mW
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Continuous Collector Current: 105A
- Collector Emitter Voltage Max: 950V
- Collector Emitter Saturation Voltage: 1.38V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 176.68 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**F3L400R10N3S7F_C1 EconoPACK[™] 3 module** ## **Final datasheet** ## **EconoPACK[™] 3 module with TRENCHSTOP[™] IGBT7 and CoolSiC[™] Schottky diode and NTC** ## **Features** - Electrical features - VCES = 950 V - IC nom = 200 A / ICRM = 200 A - Low switching losses - TRENCHSTOP[TM] IGBT7 - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder - Mechanical features - Compact design - PressFIT contact technology - Integrated NTC temperature sensor - High power density ## **Potential applications** - Solar applications ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** J J ~~i~~ oJ J ~~ai~~ Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.10 2025-02-05 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, T11 / T21**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**3**|**IGBT, T12 / T22**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**Diode, D11 / D21**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**5**|**Diode, D12 / D22**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**6**|**Diode, D13 / D23**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8| |**7**|**Diode, D14 / D24**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9| |**8**|**Diode, D15 / D25**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10| |**9**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11| |**10**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |**11**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22| |**12**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23| |**13**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26| Datasheet Revision 1.10 2025-02-05 2 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||| |---|---|---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|||3.2|kV| |Isolation test voltage NTC|_V_ISOL(NTC)|RMS, f = 50 Hz,_t_= 1 min|||3.2|kV| |Material of module<br>baseplate|||||Cu|| |Internal isolation||basic insulation (class 1, IEC 61140)|||Al2O3|| |Creepage distance|_d_Creep nom|terminal to baseplate, nom.|||10.0|mm| |Clearance|_d_Clear nom|terminal to baseplate, nom.|||7.5|mm| |Comparative tracking<br>index|_CTI_||||> 200|| |Relative thermal index<br>(electrical)|_RTI_|housing|||140|°C| |Clearance<br>_d_Clear nom terminal to baseplate, nom.<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|Clearance<br>_d_Clear nom terminal to baseplate, nom.<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|Clearance<br>_d_Clear nom terminal to baseplate, nom.<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|Clearance<br>_d_Clear nom terminal to baseplate, nom.<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|7.5<br>mm<br>> 200<br>140<br>°C|7.5<br>mm<br>> 200<br>140<br>°C|7.5<br>mm<br>> 200<br>140<br>°C|7.5<br>mm<br>> 200<br>140<br>°C| |---|---|---|---|---|---|---|---| |**Table 2**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||40||nH| |Module lead resistance,<br>terminals - chip|_R_AA'+CC'|TC= 25 °C, per switch|||2.3||mΩ| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TC= 25 °C, per switch|||2.2||mΩ| |Storage temperature|_T_stg|||-40||125|°C| |Mounting torque for<br>module mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|3||6|Nm| |Weight|_G_||||300||g| _**Note** : The current under continuous operation is limited to 50 A rms per connector pin_ ## **2** ## **IGBT, T11 / T21** **Table 3 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|950|V| |Implemented collector<br>current|_I_CN|||200|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_C= 115 °C|105|A| |**(table continues...)**|||||| Datasheet Revision 1.10 2025-02-05 3 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, T11 / T21** |**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||200|||A| |Gate-emitter peak voltage|_V_GES|||±20|||V| |**Table 4**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 70 A,_V_GE= 15 V|_T_vj= 25 °C||1.38|1.57|V| ||||_T_vj= 125 °C||1.45||| ||||_T_vj= 150 °C||1.46||| |Gate threshold voltage|_V_GEth|_I_C= 3.33 mA, VCE= VGE,_T_vj= 25 °C||4.35|5.1|5.85|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 600 V, Tvj= 25 °C|||0.46||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0.75||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||13||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.04||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 950 V,_V_GE= 0 V|_T_vj= 25 °C|||0.025|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 70 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gon= 2.2 Ω|_T_vj= 25 °C||0.038||µs| ||||_T_vj= 125 °C||0.039||| ||||_T_vj= 150 °C||0.043||| |Rise time (inductive load)|_t_r|_I_C= 70 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gon= 2.2 Ω|_T_vj= 25 °C||0.007||µs| ||||_T_vj= 125 °C||0.008||| ||||_T_vj= 150 °C||0.008||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 70 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gof= 3.9 Ω|_T_vj= 25 °C||0.168||µs| ||||_T_vj= 125 °C||0.241||| ||||_T_vj= 150 °C||0.256||| |Fall time (inductive load)|_t_f|_I_C= 70 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gof= 3.9 Ω|_T_vj= 25 °C||0.055||µs| ||||_T_vj= 125 °C||0.085||| ||||_T_vj= 150 °C||0.100||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 70 A,_V_CC= 500 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 2.2 Ω, di/dt =<br>6450 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.03||mJ| ||||_T_vj= 125 °C||0.32||| ||||_T_vj= 150 °C||0.48||| ## **(table continues...)** Datasheet Revision 1.10 2025-02-05 4 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **3 IGBT, T12 / T22** |**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 70 A,_V_CC= 500 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 3.9 Ω, dv/dt =<br>3890 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||1.72||mJ| ||||_T_vj= 125 °C||3.04||| ||||_T_vj= 150 °C||3.47||| |Thermal resistance,<br>junction to case|_R_thJC|per IGBT||||0.281|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per IGBT,λgrease= 5 W/(m·K)|||0.0590||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **3 IGBT, T12 / T22** |**3**<br>**IGBT, T12 / T22**|**3**<br>**IGBT, T12 / T22**|**3**<br>**IGBT, T12 / T22**|**3**<br>**IGBT, T12 / T22**|**3**<br>**IGBT, T12 / T22**|**3**<br>**IGBT, T12 / T22**| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|950|V| |Implemented collector<br>current|_I_CN|||200|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_C= 115 °C|105|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||200|A| |Gate-emitter peak voltage|_V_GES|||±20|V| **Table 6 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 70 A,_V_GE= 15 V|_T_vj= 25 °C||1.38|1.57|V| ||||_T_vj= 125 °C||1.45||| ||||_T_vj= 150 °C||1.46||| |Gate threshold voltage|_V_GEth|_I_C= 3.33 mA, VCE= VGE,_T_vj= 25 °C||4.35|5.1|5.85|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 600 V, Tvj= 25 °C|||0.46||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0.75||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||13||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.04||nF| **(table continues...)** Datasheet Revision 1.10 2025-02-05 5 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Diode, D11 / D21** |**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 950 V,_V_GE= 0 V|_T_vj= 25 °C|||0.025|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 70 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gon= 2.2 Ω|_T_vj= 25 °C||0.038||µs| ||||_T_vj= 125 °C||0.039||| ||||_T_vj= 150 °C||0.043||| |Rise time (inductive load)|_t_r|_I_C= 70 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gon= 2.2 Ω|_T_vj= 25 °C||0.007||µs| ||||_T_vj= 125 °C||0.008||| ||||_T_vj= 150 °C||0.008||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 70 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gof= 3.9 Ω|_T_vj= 25 °C||0.168||µs| ||||_T_vj= 125 °C||0.241||| ||||_T_vj= 150 °C||0.256||| |Fall time (inductive load)|_t_f|_I_C= 70 A,_V_CC= 500 V,<br>_V_GE= ±15 V,_R_Gof= 3.9 Ω|_T_vj= 25 °C||0.055||µs| ||||_T_vj= 125 °C||0.085||| ||||_T_vj= 150 °C||0.100||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 70 A,_V_CC= 500 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 2.2 Ω, di/dt =<br>6450 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.03||mJ| ||||_T_vj= 125 °C||0.32||| ||||_T_vj= 150 °C||0.48||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 70 A,_V_CC= 500 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 3.9 Ω, dv/dt =<br>3890 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||1.72||mJ| ||||_T_vj= 125 °C||3.04||| ||||_T_vj= 150 °C||3.47||| |Thermal resistance,<br>junction to case|_R_thJC|per IGBT||||0.281|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per IGBT,λgrease= 5 W/(m·K)|||0.0590||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **4 Diode, D11 / D21** |**Table 7**<br>**Maximum rated values**|**Table 7**<br>**Maximum rated values**|**Table 7**<br>**Maximum rated values**|**Table 7**<br>**Maximum rated values**|**Table 7**<br>**Maximum rated values**|**Table 7**<br>**Maximum rated values**| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |**(table continues...)**|||||| Datasheet Revision 1.10 2025-02-05 6 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Diode, D12 / D22** |**Table 7**<br>**(continued) Maximum rated values**|**Table 7**<br>**(continued) Maximum rated values**|**Table 7**<br>**(continued) Maximum rated values**|||| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Implemented forward<br>current|_I_FN|||100|A| |Continuous DC forward<br>current|_I_F|||70|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||200|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|1430|A²s| ||||_T_vj= 175 °C|1170|| |**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 70 A,_V_GE= 0 V|_T_vj= 25 °C||1.53|1.80|V| ||||_T_vj= 125 °C||1.41||| ||||_T_vj= 175 °C||1.33||| |Thermal resistance,<br>junction to case|_R_thJC|per diode||||0.655|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 5 W/(m·K)|||0.0830||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| _**Note** : T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **5 Diode, D12 / D22** ## **Table 9 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |---|---|---|---|---|---| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |Implemented forward<br>current|_I_FN|||100|A| |Continuous DC forward<br>current|_I_F|||70|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||200|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|1430|A²s| ||||_T_vj= 175 °C|1170|| Datasheet Revision 1.10 2025-02-05 7 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Diode, D13 / D23** |**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 70 A,_V_GE= 0 V|_T_vj= 25 °C||1.53|1.80|V| ||||_T_vj= 125 °C||1.41||| ||||_T_vj= 175 °C||1.33||| |Thermal resistance,<br>junction to case|_R_thJC|per diode||||0.655|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 5 W/(m·K)|||0.0830||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| _**Note** : T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **6 Diode, D13 / D23** |**6**<br>**Diode, D13 / D23**|**6**<br>**Diode, D13 / D23**|**6**<br>**Diode, D13 / D23**|||| |---|---|---|---|---|---| |**Table 11**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |Implemented forward<br>current|_I_FN|||100|A| |Continuous DC forward<br>current|_I_F|||70|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||200|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|1820|A²s| ||||_T_vj= 150 °C|939|| **Table 12 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 70 A,_V_GE= 0 V|_T_vj= 25 °C||1.32|1.54|V| ||||_T_vj= 125 °C||1.48||| ||||_T_vj= 150 °C||1.56||| **(table continues...)** Datasheet Revision 1.10 2025-02-05 8 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Diode, D14 / D24** |**Table 12**<br>**(continued) Characteristic values**|**Table 12**<br>**(continued) Characteristic values**|**Table 12**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Peak reverse recovery<br>current|_I_RM|_V_CC= 500 V,_I_F= 70 A,<br>_V_GE= ±15 V, -diF/dt =<br>6450 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||52.1||A| ||||_T_vj= 125 °C||52.1||| ||||_T_vj= 150 °C||52.1||| |Recovered charge|_Q_r|_V_CC= 500 V,_I_F= 70 A,<br>_V_GE= ±15 V, -diF/dt =<br>6450 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.8||µC| ||||_T_vj= 125 °C||0.8||| ||||_T_vj= 150 °C||0.8||| |Reverse recovery energy|_E_rec|_V_CC= 500 V,_I_F= 70 A,<br>_V_GE= ±15 V, -diF/dt =<br>6450 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.14||mJ| ||||_T_vj= 125 °C||0.14||| ||||_T_vj= 150 °C||0.14||| |Thermal resistance,<br>junction to case|_R_thJC|per diode||||0.288|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 5 W/(m·K)|||0.105||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| |**7**<br>**Diode, D14 / D24**|**7**<br>**Diode, D14 / D24**|**7**<br>**Diode, D14 / D24**|||| |---|---|---|---|---|---| |**Table 13**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |Implemented forward<br>current|_I_FN|||100|A| |Continuous DC forward<br>current|_I_F|||70|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||200|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|1820|A²s| ||||_T_vj= 150 °C|939|| Datasheet Revision 1.10 2025-02-05 9 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Diode, D15 / D25** |**Table 14**<br>**Characteristic values**|**Table 14**<br>**Characteristic values**|**Table 14**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 70 A,_V_GE= 0 V|_T_vj= 25 °C||1.32|1.54|V| ||||_T_vj= 125 °C||1.48||| ||||_T_vj= 150 °C||1.56||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 500 V,_I_F= 70 A,<br>_V_GE= ±15 V, -diF/dt =<br>6450 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||52.1||A| ||||_T_vj= 125 °C||52.1||| ||||_T_vj= 150 °C||52.1||| |Recovered charge|_Q_r|_V_CC= 500 V,_I_F= 70 A,<br>_V_GE= ±15 V, -diF/dt =<br>6450 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.8||µC| ||||_T_vj= 125 °C||0.8||| ||||_T_vj= 150 °C||0.8||| |Reverse recovery energy|_E_rec|_V_CC= 500 V,_I_F= 70 A,<br>_V_GE= ±15 V, -diF/dt =<br>6450 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.14||mJ| ||||_T_vj= 125 °C||0.14||| ||||_T_vj= 150 °C||0.14||| |Thermal resistance,<br>junction to case|_R_thJC|per diode||||0.288|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 5 W/(m·K)|||0.105||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **8 Diode, D15 / D25** |**8**<br>**Diode, D15 / D25**|**8**<br>**Diode, D15 / D25**|**8**<br>**Diode, D15 / D25**|||| |---|---|---|---|---|---| |**Table 15**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |Implemented forward<br>current|_I_FN|||100|A| |Continuous DC forward<br>current|_I_F|||70|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||200|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|954|A²s| ||||_T_vj= 175 °C|873|| Datasheet Revision 1.10 2025-02-05 10 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **9 NTC-Thermistor** |**Table 16**<br>**Characteristic values**|**Table 16**<br>**Characteristic values**|**Table 16**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 70 A,_V_GE= 0 V|_T_vj= 25 °C||1.53|1.80|V| ||||_T_vj= 125 °C||1.41||| ||||_T_vj= 175 °C||1.33||| |Thermal resistance,<br>junction to case|_R_thJC|per diode||||0.655|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 5 W/(m·K)|||0.0830||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| _**Note** : T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ **9 NTC-Thermistor** |**9**<br>**NTC-Thermistor**|**9**<br>**NTC-Thermistor**|**9**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 17**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|Δ_R/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _**Note** : For an analytical description of the NTC characteristics please refer to AN2009-10, chapter 4._ Datasheet Revision 1.10 2025-02-05 11 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **10 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **10 Characteristics diagrams** ## **Output characteristic (typical), IGBT, T11 / T21** IC = f(VCE) VGE = 15 V ## **Output characteristic field (typical), IGBT, T11 / T21** IC = f(VCE) T = 150 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 140 140<br>120 120<br>100 100<br>80 80<br>60 60<br>40 40<br>20 20<br>0 0<br>0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 2.5<br>Transfer characteristic (typical), IGBT, T11 / T21 Gate charge characteristic (typical), IGBT, T11 / T21<br>IC = f(VGE) VGE = f(QG)<br>VCE = 20 V IC = 200 A, Tvj = 25 °C<br>140 15<br>120<br>10<br>100<br>5<br>80<br>0<br>60<br>-5<br>40<br>-10<br>20<br>0 -15<br>4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 0.0 0.1 0.2 0.3 0.4 0.5<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2025-02-05 12 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Characteristics diagrams** ## **Capacity characteristic (typical), IGBT, T11 / T21** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1<br>0.01<br>0 20 40 60 80 100<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, T11 / T21** t = f(RG) VGE = ±15 V, IC = 70 A, VCC = 500 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, T11 / T21** t = f(IC) RGoff = 3.9 Ω, RGon = 2.2 Ω, VGE = ±15 V, VCC = 500 V, Tvj = 150 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0 20 40 60 80 100 120 140<br>**----- End of picture text -----**<br> ## **Switching losses (typical), IGBT, T11 / T21** E = f(IC) VCC = 500 V, RGoff = 3.9 Ω, RGon = 2.2 Ω, VGE = ±15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2025-02-05 13 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Characteristics diagrams** **==> picture [540 x 634] intentionally omitted <==** **----- Start of picture text -----**<br> Switching losses (typical), IGBT, T11 / T21 Reverse bias safe operating area (RBSOA), IGBT, T11 /<br>E = f(RG) T21<br>VGE = ±15 V, IC = 70 A, VCC = 500 V IC = f(VCE)<br>RGoff = 3.9 Ω, VGE = ±15 V, Tvj = 150 °C<br>4.0 250<br>3.5<br>200<br>3.0<br>2.5<br>150<br>2.0<br>100<br>1.5<br>1.0<br>50<br>0.5<br>0.0 0<br>0 5 10 15 20 25 30 35 40 0 200 400 600 800 1000<br>Transient thermal impedance, IGBT, T11 / T21 Output characteristic (typical), IGBT, T12 / T22<br>Zth = f(t) IC = f(VCE)<br>VGE = 15 V<br>1 140<br>120<br>100<br>80<br>0.1<br>60<br>40<br>20<br>0.01 0<br>0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2025-02-05 14 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Characteristics diagrams** ## **Output characteristic field (typical), IGBT, T12 / T22** IC = f(VCE) T = 150 °C vj ## **Transfer characteristic (typical), IGBT, T12 / T22** IC = f(VGE) VCE = 20 V **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 140 140<br>120 120<br>100 100<br>80 80<br>60 60<br>40 40<br>20 20<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0<br>Gate charge characteristic (typical), IGBT, T12 / T22 Capacity characteristic (typical), IGBT, T12 / T22<br>VGE = f(QG) C = f(VCE)<br>IC = 200 A, Tvj = 25 °C f = 100 kHz, VGE = 0 V, Tvj = 25 °C<br>15 100<br>10<br>10<br>5<br>0 1<br>-5<br>0.1<br>-10<br>-15 0.01<br>0.0 0.1 0.2 0.3 0.4 0.5 0 20 40 60 80 100<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2025-02-05 15 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Characteristics diagrams** **Switching times (typical), IGBT, T12 / T22 Switching times (typical), IGBT, T12 / T22** t = f(IC) t = f(RG) RGoff = 3.9 Ω, RGon = 2.2 Ω, VGE = ±15 V, VCC = 500 V, Tvj = 150 VGE = ±15 V, IC = 70 A, VCC = 500 V, Tvj = 150 °C °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0 20 40 60 80 100 120 140<br>**----- End of picture text -----**<br> ## **Switching losses (typical), IGBT, T12 / T22** E = f(IC) VCC = 500 V, RGoff = 3.9 Ω, RGon = 2.2 Ω, VGE = ±15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 20 40 60 80 100 120 140<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br> **Switching losses (typical), IGBT, T12 / T22** E = f(RG) VGE = ±15 V, IC = 70 A, VCC = 500 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2025-02-05 16 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Characteristics diagrams** **Reverse bias safe operating area (RBSOA), IGBT, T12 / Transient thermal impedance, IGBT, T12 / T22 T22** Zth = f(t) IC = f(VCE) RGoff = 3.9 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>200<br>150<br>100<br>50<br>0<br>0 200 400 600 800 1000<br>**----- End of picture text -----**<br> **Forward characteristic (typical), Diode, D11 / D21** IF = f(VF) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> ## **Transient thermal impedance, Diode, D11 / D21** Zth = f(t) **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 140 1<br>120<br>100<br>80<br>0.1<br>60<br>40<br>20<br>0 0.01<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2025-02-05 17 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Characteristics diagrams** **==> picture [540 x 607] intentionally omitted <==** **----- Start of picture text -----**<br> Forward characteristic (typical), Diode, D12 / D22 Transient thermal impedance, Diode, D12 / D22<br>IF = f(VF) Zth = f(t)<br>140 1<br>120<br>100<br>80<br>0.1<br>60<br>40<br>20<br>0 0.01<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0.001 0.01 0.1 1 10<br>Forward characteristic (typical), Diode, D13 / D23 Switching losses (typical), Diode, D13 / D23<br>IF = f(VF) Erec = f(IF)<br>RGon = 2.2 Ω, VCE = 500 V<br>140 0.18<br>0.16<br>120<br>0.14<br>100<br>0.12<br>80<br>0.10<br>0.08<br>60<br>0.06<br>40<br>0.04<br>20<br>0.02<br>0 0.00<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 0 20 40 60 80 100 120 140<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2025-02-05 18 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Characteristics diagrams** **Switching losses (typical), Diode, D13 / D23 Transient thermal impedance, Diode, D13 / D23** Erec = f(RG) Zth = f(t) VCE = 500 V, IF = 70 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0.18<br>0.16<br>0.14<br>0.12<br>0.10<br>0.08<br>0.06<br>0.04<br>0.02<br>0.00<br>0 5 10 15 20 25<br>**----- End of picture text -----**<br> **Forward characteristic (typical), Diode, D14 / D24** IF = f(VF) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **Switching losses (typical), Diode, D14 / D24** Erec = f(IF) RGon = 2.2 Ω, VCE = 500 V **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 140 0.18<br>0.16<br>120<br>0.14<br>100<br>0.12<br>80<br>0.10<br>0.08<br>60<br>0.06<br>40<br>0.04<br>20<br>0.02<br>0 0.00<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 0 20 40 60 80 100 120 140<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2025-02-05 19 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Characteristics diagrams** **Switching losses (typical), Diode, D14 / D24 Transient thermal impedance, Diode, D14 / D24** Erec = f(RG) Zth = f(t) VCE = 500 V, IF = 70 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0.18<br>0.16<br>0.14<br>0.12<br>0.10<br>0.08<br>0.06<br>0.04<br>0.02<br>0.00<br>0 5 10 15 20 25<br>**----- End of picture text -----**<br> **Forward characteristic (typical), Diode, D15 / D25** IF = f(VF) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **Transient thermal impedance, Diode, D15 / D25** Zth = f(t) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2025-02-05 20 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Characteristics diagrams** **==> picture [540 x 291] intentionally omitted <==** **----- Start of picture text -----**<br> Temperature characteristic (typical), NTC-Thermistor<br>R = f(TNTC)<br>100000<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.10 2025-02-05 21 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **11 Circuit diagram** **==> picture [541 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 11 Circuit diagram<br>D13 D14<br>33, 34 29, 30 31<br>T11 1, 2 NTC1 J<br>D11<br>32<br>5<br>6<br>7<br>D15<br>T12 3,4<br>D12<br>26<br>25<br>27, 28<br>D23 D24<br>15, 16 19, 20 17<br>T21 NTC2 J<br>13, 14<br>D21<br>18<br>10<br>9<br>8<br>D25<br>T22 11, 12<br>D22<br>23<br>24<br>21, 22<br>**----- End of picture text -----**<br> **Figure 1** Datasheet Revision 1.10 2025-02-05 22 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **12 Package outlines** **==> picture [105 x 47] intentionally omitted <==** ## **12 Package outlines** **==> picture [335 x 615] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>122 ` 0,5<br>According to Application Note<br>E<br>(28,75) j n 0,3 A B C<br>25<br>Y<br>X<br>0<br>25<br>(28,75)<br>B D n (5,5) j n 0,3 A D E<br>j n 0,3 A B C 110 ` 0,1 Distance of threaded holes in heatsink 2x<br>A<br>j 0,5 A<br>4x<br>j 1 A c 0,3 CZ<br>40x j 0,7 A<br>according to screw head washer<br>according to screw head<br>28,7529,21 30 29 28 27 26 25 24 23 22 21 20 19<br>25<br>13,349,53 3132 1817<br>0<br>13,349,53 3334 1615<br>25<br>28,75<br>29,21 1 2 3 4 5 6 7 8 9 10 11 12 13 14<br>Tolerance of PCB hole pattern j n 0,1<br>For PressFIT pin: Details about hole specification for contacts refer to AN2007-09<br>For Solderpin: Details about hole specification for contacts refer to AN2017-03<br>Dimensions according to ISO 14405 GG (Method of least squares (LSQ)).<br>Reference D and E defined with GG<br>ISO 8015 - Independency principle<br>120,8305<br>( n<br>5,5)<br>( n<br>5,5)<br>24,444°<br>55 (47,25) 0 (47,25) 55<br>0,5 ` 0,5 `<br>62,5 62<br>0,1 Distance of threaded holes in heatsink<br> `<br>50<br>6,85<br>20,6 17<br>38,1 34,29 19,05 15,24 11,43 7,62 0 7,62 11,43 15,24 19,05 34,29 38,1<br>55 47,25 40,01 36,2 24,77 20,96 17,15 13,34 5,72 0 5,72 13,34 17,15 20,96 24,77 36,2 40,01 47,25 55 59,06<br>W00269676.00<br>**----- End of picture text -----**<br> ## **Figure 2** Datasheet Revision 1.10 2025-02-05 23 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **13 Module label code** ## **13 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.10 2025-02-05 24 **F3L400R10N3S7F_C1 EconoPACK[™] 3 module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2024-09-25|Initial version| |1.00|2025-01-17|Final datasheet| |1.10|2025-02-05|Final datasheet| Datasheet Revision 1.10 2025-02-05 25 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2025-02-05 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2025 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABK934-003** Infineon Technologies in customer’s applications. ## 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Updated at April 28, 2026
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