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F3L400R07W3S5B59BPSA1
IGBT Module, Six Pack, 200 A, 1.17 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK Series
- IGBT Technology: Trench Stop 5
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: Six Pack
- Transistor Mounting: Panel
- DC Collector Current: 200A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 200A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.17V
- Collector Emitter Saturation Voltage Vce(on): 1.17V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 76.74 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**F3L400R07W3S5_B59** **EasyPACK[™] module** ## **EasyPACK[™] module with TRENCHSTOP[™] 5 and Emitter Controlled 3 diode and PressFIT / NTC** ## **Features** - Electrical features - VCES = 650 V - IC nom = 200 A / ICRM = 400 A - Low switching losses - Mechanical features - Al2O3 substrate with low thermal resistance - Compact design - PressFIT contact technology - Integrated NTC temperature sensor - High power density ## **Potential applications** - Solar applications - 3-level-applications ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** Please read the Important Notice and Warnings at the end of this document Datasheet **www.infineon.com** 1.00 2021-06-25 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, T1.1 / T1.2 / T4.1 / T4.2**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**IGBT, T2 / T3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**Diode, D1 / D4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6| |**5**|**Diode, D2 / D3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7| |**6**|**Diode, D5 / D6**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8| |**7**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9| |**8**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10| |**9**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19| |**10**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20| |**11**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22| Datasheet 2 1.00 2021-06-25 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**| |---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|3.2|kV| |Internal Isolation||basic insulation (class 1, IEC 61140)|Al2O3|| |Creepage distance|_d_Creep|terminal to heatsink|11.2|mm| |Creepage distance|_d_Creep|terminal to terminal|6.8|mm| |Clearance|_d_Clear|terminal to heatsink|9.4|mm| |Clearance|_d_Clear|terminal to terminal|5.5|mm| |Comparative tracking index|_CTI_||> 400|| |RTI Elec.|_RTI_|housing|140|°C| ## **Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 2**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||12||nH| |Storage temperature|_T_stg|||-40||125|°C| |Mounting torque for modul<br>mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|1.3||1.5|Nm| |Weight|_G_||||78||g| _Note: The current under continuous operation is limited to 25A rms per connector pin._ ## **2 IGBT, T1.1 / T1.2 / T4.1 / T4.2** |**2**<br>**IGBT, T1.1 / T1.2 / T4.1 / T4.2**|**2**<br>**IGBT, T1.1 / T1.2 / T4.1 / T4.2**|**2**<br>**IGBT, T1.1 / T1.2 / T4.1 / T4.2**|**2**<br>**IGBT, T1.1 / T1.2 / T4.1 / T4.2**|**2**<br>**IGBT, T1.1 / T1.2 / T4.1 / T4.2**|**2**<br>**IGBT, T1.1 / T1.2 / T4.1 / T4.2**| |---|---|---|---|---|---| |**Table 3**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|650|V| |Implemented collector<br>current|_I_CN|||200|A| |Continous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|130|A| |Repetitive peak collector<br>current|_I_CRM|_t_P= 1 ms||400|A| |Gate-emitter peak voltage|_V_GES|||±20|V| Datasheet 3 1.00 2021-06-25 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, T1.1 / T1.2 / T4.1 / T4.2** |**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 100 A,_V_GE= 15 V|_T_vj= 25 °C||1.17|1.50|V| ||||_T_vj= 125 °C||1.20||| ||||_T_vj= 150 °C||1.21||| |Gate threshold voltage|_V_GEth|_I_C= 2 mA, VCE= VGE,_T_vj= 25 °C||3.25|4|4.75|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 400 V|||0.84||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||14.3||nF| |Reverse transfer capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.05||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 650 V,_V_GE= 0 V|_T_vj= 25 °C|||0.019|mA| |Gate-emitter leakage current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 100 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 4.7 Ω|_T_vj= 25 °C||0.022||µs| ||||_T_vj= 125 °C||0.021||| ||||_T_vj= 150 °C||0.021||| |Rise time (inductive load)|_t_r|_I_C= 100 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 4.7 Ω|_T_vj= 25 °C||0.013||µs| ||||_T_vj= 125 °C||0.015||| ||||_T_vj= 150 °C||0.015||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 100 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 4.7 Ω|_T_vj= 25 °C||0.117||µs| ||||_T_vj= 125 °C||0.145||| ||||_T_vj= 150 °C||0.158||| |Fall time (inductive load)|_t_f|_I_C= 100 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 4.7 Ω|_T_vj= 25 °C||0.044||µs| ||||_T_vj= 125 °C||0.046||| ||||_T_vj= 150 °C||0.047||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 100 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 4.7 Ω, di/dt = 12.5<br>kA/µs (Tvj= 150 °C)|_T_vj= 25 °C||1||mJ| ||||_T_vj= 125 °C||1.4||| ||||_T_vj= 150 °C||1.49||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 100 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 4.7 Ω, dv/dt =<br>4400 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.78||mJ| ||||_T_vj= 125 °C||1.28||| ||||_T_vj= 150 °C||1.4||| |Thermal resistance, junction<br>to heatsink|_R_thJH|per IGBT,λgrease= 3.3 W/(m*K)|||0.478||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| Datasheet 1.00 4 2021-06-25 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **3 IGBT, T2 / T3** ## **3 IGBT, T2 / T3** |**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|650|V| |Implemented collector<br>current|_I_CN|||300|A| |Continous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|255|A| |Repetitive peak collector<br>current|_I_CRM|_t_P= 1 ms||600|A| |Gate-emitter peak voltage|_V_GES|||±20|V| **Table 6 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 100 A,_V_GE= 15 V|_T_vj= 25 °C||0.88|1.13|V| ||||_T_vj= 125 °C||0.80||| ||||_T_vj= 150 °C||0.77||| |Gate threshold voltage|_V_GEth|_I_C= 4 mA, VCE= 20 V,_T_vj=|25 °C|4.25|5|5.75|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 400 V|||3.7||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||47.1||nF| |Reverse transfer capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.168||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 650 V,_V_GE= 0 V|_T_vj= 25 °C|||0.019|mA| |Gate-emitter leakage current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 100 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 6.8 Ω|_T_vj= 25 °C||0.128||µs| ||||_T_vj= 125 °C||0.108||| ||||_T_vj= 150 °C||0.103||| |Rise time (inductive load)|_t_r|_I_C= 100 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 6.8 Ω|_T_vj= 25 °C||0.025||µs| ||||_T_vj= 125 °C||0.030||| ||||_T_vj= 150 °C||0.031||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 100 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 6.8 Ω|_T_vj= 25 °C||0.693||µs| ||||_T_vj= 125 °C||0.821||| ||||_T_vj= 150 °C||0.853||| Datasheet 1.00 2021-06-25 5 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Diode, D1 / D4** ## **Characteristic values (continued)** ||||||||| |---|---|---|---|---|---|---|---| |**Table 6**<br>**Characteristic values (continued)**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Fall time (inductive load)|_t_f|_I_C= 100 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 6.8 Ω|_T_vj= 25 °C||0.129||µs| ||||_T_vj= 125 °C||0.213||| ||||_T_vj= 150 °C||0.234||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 100 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 6.8 Ω, di/dt =<br>2700 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||1.06||mJ| ||||_T_vj= 125 °C||1.44||| ||||_T_vj= 150 °C||1.54||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 100 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 6.8 Ω, dv/dt = 760<br>V/µs (Tvj= 150 °C)|_T_vj= 25 °C||5.24||mJ| ||||_T_vj= 125 °C||8.18||| ||||_T_vj= 150 °C||8.84||| |Thermal resistance, junction<br>to heatsink|_R_thJH|per IGBT,λgrease= 3.3 W/(m*K)|||0.300||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **4 Diode, D1 / D4** |**4**<br>**Diode, D1 / D4**|**4**<br>**Diode, D1 / D4**|**4**<br>**Diode, D1 / D4**|||| |---|---|---|---|---|---| |**Table 7**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|650|V| |Implemented forward<br>current|_I_FN|||225|A| |Continous DC forward<br>current|_I_F|||100|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||450|A| |I2t - value|_I_2_t_|_V_R= 0 V,_t_P= 10 ms|_T_vj= 125 °C|3030|A²s| ||||_T_vj= 150 °C|2760|| **Table 8 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 100 A,_V_GE= 0 V|_T_vj= 25 °C||1.26|1.55|V| ||||_T_vj= 125 °C||1.16||| ||||_T_vj= 150 °C||1.11||| Datasheet 6 1.00 2021-06-25 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Diode, D2 / D3** |**Table 8**<br>**Characteristic values (continued)**|**Table 8**<br>**Characteristic values (continued)**|**Table 8**<br>**Characteristic values (continued)**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Peak reverse recovery<br>current|_I_RM|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>2700 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||105||A| ||||_T_vj= 125 °C||141||| ||||_T_vj= 150 °C||151||| |Recovered charge|_Q_r|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>2700 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||5.94||µC| ||||_T_vj= 125 °C||11.6||| ||||_T_vj= 150 °C||13.5||| |Reverse recovery energy|_E_rec|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>2700 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||1.3||mJ| ||||_T_vj= 125 °C||2.58||| ||||_T_vj= 150 °C||3.01||| |Thermal resistance, junction<br>to heatsink|_R_thJH|per diode,λgrease= 3.3 W/(m*K)|||0.431||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **5 Diode, D2 / D3** |**5**<br>**Diode, D2 / D3**|**5**<br>**Diode, D2 / D3**|**5**<br>**Diode, D2 / D3**|||| |---|---|---|---|---|---| |**Table 9**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|650|V| |Implemented forward<br>current|_I_FN|||225|A| |Continous DC forward<br>current|_I_F|||100|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||450|A| |I2t - value|_I_2_t_|_V_R= 0 V,_t_P= 10 ms|_T_vj= 125 °C|3030|A²s| ||||_T_vj= 150 °C|2760|| |**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 100 A,_V_GE= 0 V|_T_vj= 25 °C||1.26|1.55|V| ||||_T_vj= 125 °C||1.16||| ||||_T_vj= 150 °C||1.11||| Datasheet 1.00 2021-06-25 7 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Diode, D5 / D6** |**Table 10**<br>**Characteristic values (continued)**|**Table 10**<br>**Characteristic values (continued)**|**Table 10**<br>**Characteristic values (continued)**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Peak reverse recovery<br>current|_I_RM|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>2700 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||105||A| ||||_T_vj= 125 °C||141||| ||||_T_vj= 150 °C||151||| |Recovered charge|_Q_r|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>2700 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||5.94||µC| ||||_T_vj= 125 °C||11.6||| ||||_T_vj= 150 °C||13.5||| |Reverse recovery energy|_E_rec|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>2700 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||1.3||mJ| ||||_T_vj= 125 °C||2.58||| ||||_T_vj= 150 °C||3.01||| |Thermal resistance, junction<br>to heatsink|_R_thJH|per diode,λgrease= 3.3 W/(m*K)|||0.390||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **6 Diode, D5 / D6** |**6**<br>**Diode, D5 / D6**|**6**<br>**Diode, D5 / D6**|**6**<br>**Diode, D5 / D6**|||| |---|---|---|---|---|---| |**Table 11**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|650|V| |Implemented forward<br>current|_I_FN|||300|A| |Continous DC forward<br>current|_I_F|||100|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||600|A| |I2t - value|_I_2_t_|_V_R= 0 V,_t_P= 10 ms|_T_vj= 125 °C|6610|A²s| ||||_T_vj= 150 °C|6050|| |**Table 12**<br>**Characteristic values**|**Table 12**<br>**Characteristic values**|**Table 12**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 100 A,_V_GE= 0 V|_T_vj= 25 °C||1.19|1.47|V| ||||_T_vj= 125 °C||1.07||| ||||_T_vj= 150 °C||1.02||| Datasheet 8 1.00 2021-06-25 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 NTC-Thermistor** |**Table 12**<br>**Characteristic values (continued)**|**Table 12**<br>**Characteristic values (continued)**|**Table 12**<br>**Characteristic values (continued)**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Peak reverse recovery<br>current|_I_RM|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt = 12.5<br>kA/µs (Tvj= 150 °C)|_T_vj= 25 °C||135||A| ||||_T_vj= 125 °C||186||| ||||_T_vj= 150 °C||199||| |Recovered charge|_Q_r|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt = 12.5<br>kA/µs (Tvj= 150 °C)|_T_vj= 25 °C||5.05||µC| ||||_T_vj= 125 °C||12||| ||||_T_vj= 150 °C||14.4||| |Reverse recovery energy|_E_rec|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt = 12.5<br>kA/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.931||mJ| ||||_T_vj= 125 °C||2.64||| ||||_T_vj= 150 °C||3.26||| |Thermal resistance, junction<br>to heatsink|_R_thJH|per diode,λgrease= 3.3 W/(m*K)|||0.479||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **7 NTC-Thermistor** |**7**<br>**NTC-Thermistor**|**7**<br>**NTC-Thermistor**|**7**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 13**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|_ΔR/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _Note: Specification according to the valid application note._ Datasheet 9 1.00 2021-06-25 **F3L400R07W3S5_B59 EasyPACK[™] module** **8 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **output characteristic (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2** IC = f(VCE) VGE = 15 V **output characteristic (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2** IC = f(VCE) T = 150 °C vj **==> picture [539 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 200 200<br>180 180<br>160 160<br>140 140<br>120 120<br>100 100<br>80 80<br>60 60<br>40 40<br>20 20<br>0 0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>transfer characteristic (typical), IGBT, T1.1 / T1.2 / switching losses (typical), IGBT, T1.1 / T1.2 / T4.1 /<br>T4.1 / T4.2 T4.2<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 4.7 Ω, RGon = 4.7 Ω, VCE = 300 V, VGE = ± 15 V<br>200 3.00<br>2.75<br>180<br>2.50<br>160<br>2.25<br>140<br>2.00<br>120<br>1.75<br>100 1.50<br>1.25<br>80<br>1.00<br>60<br>0.75<br>40<br>0.50<br>20<br>0.25<br>0 0.00<br>3 4 5 6 7 0 20 40 60 80 100 120 140 160 180 200<br>**----- End of picture text -----**<br> Datasheet 10 1.00 2021-06-25 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **switching losses (typical), IGBT, T1.1 / T1.2 / T4.1 / switching times (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2 T4.2** t = f(IC) E = f(RG)G)) RGoff = 4.7 Ω, RGon = 4.7 Ω, VCE = 300 V, VGE = ± 15 V, Tvj = IC = 100 A, VCE = 300 V, VGE = ± 15 V = 100 A, VCE = 300 V, VGE = ± 15 V = 300 V, VGE = ± 15 V = ± 15 V 150 °C E = f(RG)G)) IC = 100 A, VCE = 300 V, VGE = ± 15 V **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>**----- End of picture text -----**<br> **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0 20 40 60 80 100 120 140 160 180 200<br>**----- End of picture text -----**<br> **switching times (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2 transient thermal impedance , IGBT, T1.1 / T1.2 / T4.1 /** t = f(RG) **T4.2** IC = 100 A, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0 5 10 15 20 25 30 35 40 45 50<br>**----- End of picture text -----**<br> Zth = f(t) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet 1.00 2021-06-25 11 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **reverse bias safe operating area (RBSOA), IGBT, T1.1 / T1.2 / T4.1 / T4.2** IC = f(VCE) RGoff = 4.7 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 500<br>450<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 100 200 300 400 500 600 700<br>**----- End of picture text -----**<br> **gate charge characteristic (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2** VGE = f(QG) **capacity characteristic (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>0.1<br>0.01<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> ## **output characteristic (typical), IGBT, T2 / T3** IC = f(VCE) VGE = 15 V IC = 200 A, Tvj = 25 °C **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 15 200<br>180<br>10<br>160<br>140<br>5<br>120<br>0 100<br>80<br>-5<br>60<br>40<br>-10<br>20<br>-15 0<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>**----- End of picture text -----**<br> Datasheet 12 1.00 2021-06-25 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **output characteristic (typical), IGBT, T2 / T3** ## **transfer characteristic (typical), IGBT, T2 / T3** IC = f(VCE) IC = f(VGE) VCE = 20 V T = 150 °C vj **==> picture [539 x 311] intentionally omitted <==** **----- Start of picture text -----**<br> 200 200<br>180 180<br>160 160<br>140 140<br>120 120<br>100 100<br>80 80<br>60 60<br>40 40<br>20 20<br>0 0<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3 4 5 6 7<br>switching losses (typical), IGBT, T2 / T3 switching losses (typical), IGBT, T2 / T3<br>E = f(IC) E = f(RG)<br>RGoff = 6.8 Ω, RGon = 6.8 Ω, VCE = 300 V, VGE = ± 15 V IC = 100 A, VCE = 300 V, VGE = ± 15 V<br>**----- End of picture text -----**<br> **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 16 12<br>11<br>14<br>10<br>12 9<br>8<br>10<br>7<br>8 6<br>5<br>6<br>4<br>4 3<br>2<br>2<br>1<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 10 20 30 40 50 60 70<br>**----- End of picture text -----**<br> Datasheet 13 1.00 2021-06-25 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **switching times (typical), IGBT, T2 / T3** ## t = f(IC) RGoff = 6.8 Ω, RGon = 6.8 Ω, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 20 40 60 80 100 120 140 160 180 200<br>**----- End of picture text -----**<br> **transient thermal impedance , IGBT, T2 / T3** Zth = f(t) ## **switching times (typical), IGBT, T2 / T3** t = f(RG) IC = 100 A, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 10 20 30 40 50 60 70<br>**----- End of picture text -----**<br> **reverse bias safe operating area (RBSOA), IGBT, T2 / T3** IC = f(VCE) RGoff = 6.8 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0 100 200 300 400 500 600 700<br>**----- End of picture text -----**<br> Datasheet 1.00 2021-06-25 14 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **capacity characteristic (typical), IGBT, T2 / T3** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **gate charge characteristic (typical), IGBT, T2 / T3** VGE = f(QG) IC = 200 A, Tvj = 25 °C **==> picture [539 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 15<br>10<br>100<br>5<br>10 0<br>-5<br>1<br>-10<br>0.1 -15<br>0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>forward characteristic (typical), Diode, D1 / D4 switching losses (typical), Diode, D1 / D4<br>IF = f(VF) Erec = f(IF)<br>RGon = 6.8 Ω, VCE = 300 V<br>200 5.0<br>180 4.5<br>160 4.0<br>140 3.5<br>120 3.0<br>100 2.5<br>80 2.0<br>60 1.5<br>40 1.0<br>20 0.5<br>0 0.0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 180 200<br>**----- End of picture text -----**<br> Datasheet 1.00 2021-06-25 15 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **switching losses (typical), Diode, D1 / D4 transient thermal impedance , Diode, D1 / D4** Erec = f(RG) Zth = f(t) VCE = 300 V, IF = 100 A **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 3.6<br>3.3<br>3.0<br>2.7<br>2.4<br>2.1<br>1.8<br>1.5<br>1.2<br>0.9<br>0.6<br>0.3<br>0.0<br>0 10 20 30 40 50 60 70<br>**----- End of picture text -----**<br> **forward characteristic (typical), Diode, D2 / D3** IF = f(VF) **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **switching losses (typical), Diode, D2 / D3** Erec = f(IF) RGon = 6.8 Ω, VCE = 300 V **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 200 5.0<br>180 4.5<br>160 4.0<br>140 3.5<br>120 3.0<br>100 2.5<br>80 2.0<br>60 1.5<br>40 1.0<br>20 0.5<br>0 0.0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 100 120 140 160 180 200<br>**----- End of picture text -----**<br> Datasheet 16 1.00 2021-06-25 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **switching losses (typical), Diode, D2 / D3** Erec = f(RG) **transient thermal impedance , Diode, D2 / D3** Zth = f(t) VCE = 300 V, IF = 100 A **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 3.6<br>3.3<br>3.0<br>2.7<br>2.4<br>2.1<br>1.8<br>1.5<br>1.2<br>0.9<br>0.6<br>0.3<br>0.0<br>0 10 20 30 40 50 60 70<br>**----- End of picture text -----**<br> **forward characteristic of (typical), Diode, D5 / D6** IF = f(VF) **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **switching losses (typical), Diode, D5 / D6** Erec = f(IF) RGon = 4.7 Ω, VCE = 300 V **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 200 5.5<br>180 5.0<br>4.5<br>160<br>4.0<br>140<br>3.5<br>120<br>3.0<br>100<br>2.5<br>80<br>2.0<br>60<br>1.5<br>40<br>1.0<br>20 0.5<br>0 0.0<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50 0 20 40 60 80 100 120 140 160 180 200<br>**----- End of picture text -----**<br> Datasheet 1.00 2021-06-25 17 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **switching losses (typical), Diode, D5 / D6 transient thermal impedance , Diode, D5 / D6** Erec = f(RG) Zth = f(t) VCE = 300 V, IF = 100 A **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>1.5<br>1.0<br>0.5<br>0.0<br>0 5 10 15 20 25 30 35 40 45 50<br>**----- End of picture text -----**<br> **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> ## **temperature characteristic (typical), NTC-Thermistor** R = f(TNTC) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>10000<br>1000<br>100<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br> Datasheet 18 1.00 2021-06-25 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Circuit diagram** **9 Circuit diagram** **==> picture [395 x 622] intentionally omitted <==** **Figure 2** Datasheet 19 1.00 2021-06-25 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Package outlines** ## **10 Package outlines** **==> picture [520 x 261] intentionally omitted <==** **----- Start of picture text -----**<br> dimensioned for EJOT Delta PT WN5451 25<br>choose length according to pcb thickness<br>( � 4,2) max. screw-in depth 8,5mm 4x 4x � 3,5 pcb hole pattern<br>26 DC+ DC+DC+DC+ N1 N1 N2 N2 DC- DC- DC- DC-<br>24<br>14 20,817,6 DC+ DC+ N1N1 N1N1 N2N2 N2N2 DC- DC-G4.1 HE4 HE4 G4.2<br>HE1 HE1<br>0 4,80 G1.1 G1.2<br>4,88 HE3 NTC1<br>14 11,2 G3 NTC2<br>20,817,624 Phase1Phase1 G2 Phase1Phase1 Phase2Phase2 Phase2<br>26 Phase1 HE2 Phase1 Phase2 Phase2 Phase2<br>(99,3 � 0,1) Distance of threaded holes in heatsink<br>109,9 � 0,45<br>- Details about hole specification for contacts refer to AN2009-01 chapter 2<br>- Diameters of drill � 1,15mm<br>- Copper thickness in hole 25~50um<br>recommended design hight<br>0,1<br>� 12<br>5,4 �<br>� 2x according to screw head washer<br>2x<br>0,45<br> �<br>62<br>3,4)<br>� (<br>47,43 0 47,43<br>44,43 36,08 29,68 26,48 23,28 20,08 16,88 13,68 7,28 4,08 0 4,08 7,28 13,68 16,88 20,08 23,28 26,48 29,68 32,88 36,08 44,43<br>0,1<br> � (12)<br>12,2 (16,4)<br>**----- End of picture text -----**<br> **Figure 3** ## **11 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)<br><br> <br> <br> <br> <br>|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 4** Datasheet 20 1.00 2021-06-25 **F3L400R07W3S5_B59 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2021-04-28|Target datasheet| |1.00|2021-06-25|Final datasheet| Datasheet 21 1.00 2021-06-25 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2021-06-25 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2021 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-AAS474-002** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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