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F3L3MR12W3M1HH11BPSA1
IGBT Module, Three level Inverter, 180 A, 1.3 V, 150 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK Series
- IGBT Technology: Trench
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Continuous Collector Current: 180A
- Collector Emitter Voltage Max: 950V
- Collector Emitter Saturation Voltage: 1.3V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 286.2 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**F3L3MR12W3M1H_H11 EasyPACK[™] module** _ ## **Final datasheet** ## **EasyPACK[™] module with CoolSiC[™] Trench MOSFET and PressFIT / NTC** ## **Features** - Electrical features - VCES = 1200 V - IC nom = 200 A / ICRM = 400 A - Increased DC-link voltage - High current density - Low switching losses - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder - Mechanical features - High current pin - Integrated NTC temperature sensor - PressFIT contact technology - Rugged mounting due to integrated mounting clamps ## **Potential applications** - Three-level applications - High-frequency switching application - Solar applications ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** **==> picture [3 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2024-11-12 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, T1 / T4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**3**|**MOSFET, T2 / T3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**Body diode (MOSFET, T2 / T3)**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**5**|**IGBT, T5 / T6**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8| |**6**|**Diode, D1 / D4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9| |**7**|**Diode, D5 / D6**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10| |**8**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11| |**9**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |**10**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27| |**11**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28| |**12**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .31| Datasheet Revision 1.00 2024-11-12 2 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||||| |---|---|---|---|---|---|---|---| |**Table 1**<br>**Insulation coordination**|||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|||3.2||kV| |Isolation test voltage NTC|_V_ISOL(NTC)|RMS, f = 50 Hz,_t_= 1 min|||3.2||kV| |Internal isolation||basic insulation (class 1, IEC 61140)|||Al2O3||| |Comparative tracking<br>index|_CTI_||||> 400||| |Relative thermal index<br>(electrical)|_RTI_|housing|||140||°C| |**Table 2**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||39||nH| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TH= 25 °C, per switch|||2.4||mΩ| |Storage temperature|_T_stg|||-40||125|°C| |Mounting torque for<br>module mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|1.3||1.5|Nm| |Weight|_G_||||78||g| _**Note** : The current under continuous operation is limited to 50A rms per connector pin._ ## **2 IGBT, T1 / T4** |**2**<br>**IGBT, T1 / T4**|**2**<br>**IGBT, T1 / T4**|**2**<br>**IGBT, T1 / T4**|**2**<br>**IGBT, T1 / T4**|**2**<br>**IGBT, T1 / T4**|**2**<br>**IGBT, T1 / T4**| |---|---|---|---|---|---| |**Table 3**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|950|V| |Implemented collector<br>current|_I_CN|||200|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|180|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||400|A| |Gate-emitter peak voltage|_V_GES|||±20|V| Datasheet Revision 1.00 2024-11-12 3 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, T1 / T4** |**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 200 A,_V_GE= 15 V|_T_vj= 25 °C||1.30|1.40|V| ||||_T_vj= 125 °C||1.35||| ||||_T_vj= 150 °C||1.35||| |Gate threshold voltage|_V_GEth|_I_C= 3.25 mA, VCE= 20 V,_T_vj= 25 °C||4.15|4.9|5.65|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 600 V, Tvj= 25 °C|||2.05||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||1.5||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||24.6||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.114||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 950 V,_V_GE= 0 V|_T_vj= 25 °C|||37|µA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 200 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gon= 18 Ω|_T_vj= 25 °C||0.298||µs| ||||_T_vj= 125 °C||0.268||| ||||_T_vj= 150 °C||0.254||| |Rise time (inductive load)|_t_r|_I_C= 200 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gon= 18 Ω|_T_vj= 25 °C||0.045||µs| ||||_T_vj= 125 °C||0.056||| ||||_T_vj= 150 °C||0.059||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 200 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gof= 82 Ω|_T_vj= 25 °C||3.390||µs| ||||_T_vj= 125 °C||3.580||| ||||_T_vj= 150 °C||3.590||| |Fall time (inductive load)|_t_f|_I_C= 200 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gof= 82 Ω|_T_vj= 25 °C||0.212||µs| ||||_T_vj= 125 °C||0.372||| ||||_T_vj= 150 °C||0.443||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 200 A,_V_CC= 600 V,<br>_L_σ= 7 nH,_V_GE= ±15 V,<br>_R_Gon= 18 Ω, di/dt = 2800<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||21.9||mJ| ||||_T_vj= 125 °C||27||| ||||_T_vj= 150 °C||28.5||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 200 A,_V_CC= 600 V,<br>_L_σ= 7 nH,_V_GE= ±15 V,<br>_R_Gof= 82 Ω, dv/dt = 1600<br>V/µs (Tvj= 150 °C)|_T_vj= 25 °C||32||mJ| ||||_T_vj= 125 °C||40.3||| ||||_T_vj= 150 °C||42.8||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT,λgrease= 3.3 W/(m·K)|||0.439||K/W| |**(table continues...)**|||||||| Datasheet Revision 1.00 2024-11-12 4 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **3 MOSFET, T2 / T3** |**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Temperature under<br>switching conditions|_T_vj op||-40||150|°C| ## **3 MOSFET, T2 / T3** |**3**<br>**MOSFET, T2 / T3**|**3**<br>**MOSFET, T2 / T3**|**3**<br>**MOSFET, T2 / T3**|**3**<br>**MOSFET, T2 / T3**|**3**<br>**MOSFET, T2 / T3**||| |---|---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Drain-source voltage|_V_DSS||_T_vj= 25 °C||1200|V| |Implemented drain current|_I_DN||||240|A| |Continuous DC drain<br>current|_I_DDC|_T_vj= 175 °C,_V_GS= 18 V|_T_H= 65 °C||215|A| |Repetitive peak drain<br>current|_I_DRM|verified by design, tplimited by Tvjmax|||400|A| |Gate-source voltage, max.<br>transient voltage|_V_GS|_D_< 0.01|||-10/23|V| |Gate-source voltage, max.<br>static voltage|_V_GS||||-7/20|V| |Gate-source voltage, max.<br>static voltage<br>_V_GS|Gate-source voltage, max.<br>static voltage<br>_V_GS|Gate-source voltage, max.<br>static voltage<br>_V_GS|||-7/20<br>V|-7/20<br>V| |---|---|---|---|---|---|---| |**Table 6**<br>**Recommended values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |On-state gate voltage|_V_GS(on)||||15...18|V| |Of-state gate voltage|_V_GS(of)||||-5...0|V| **Table 7 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Drain-source on-resistance|_R_DS(on)|_I_D= 240 A|_V_GS=18 V,<br>_T_vj= 25 °C||2.91|3.82|mΩ| ||||_V_GS=18 V,<br>_T_vj= 125 °C||4.7||| ||||_V_GS=18 V,<br>_T_vj= 175 °C||6.24||| ||||_V_GS=15 V,<br>_T_vj= 25 °C||3.4||| |Gate threshold voltage|_V_GS(th)|_I_D= 112 mA, VDS= VGS,_T_vj= 25 °C, (tested<br>afer 1ms pulse at VGS= +20 V)||3.45|4.3|5.15|V| |Total gate charge|_Q_G|_V_DD=800 V,_V_GS= -3/18 V, Tvj= 25 °C|||0.8||µC| **(table continues...)** Datasheet Revision 1.00 2024-11-12 5 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **3 MOSFET, T2 / T3** |**Table 7**<br>**(continued) Characteristic values**|**Table 7**<br>**(continued) Characteristic values**|**Table 7**<br>**(continued) Characteristic values**|**Table 7**<br>**(continued) Characteristic values**||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Internal gate resistor|_R_Gint|_T_vj=25 °C|||1.9||Ω| |Input capacitance|_C_ISS|_f_= 100 kHz,_V_DS=800 V,<br>_V_GS=0 V|_T_vj=25 °C||24.2||nF| |Output capacitance|_C_OSS|_f_= 100 kHz,_V_DS=800 V,<br>_V_GS=0 V|_T_vj=25 °C||1.2||nF| |Reverse transfer<br>capacitance|_C_rss|_f_= 100 kHz,_V_DS=800 V,<br>_V_GS=0 V|_T_vj=25 °C||0.079||nF| |COSSstored energy|_E_OSS|_V_DS=800 V,_V_GS= -3/18 V,_T_vj= 25 °C|||473||µJ| |Drain-source leakage<br>current|_I_DSS|_V_DS= 1200 V,_V_GS= -3 V|_T_vj= 25 °C||0.16|378|µA| |Gate-source leakage<br>current|_I_GSS|_V_DS= 0 V,_T_vj= 25 °C|_V_GS=20 V|||400|nA| |Turn-on delay time<br>(inductive load)|_t_d on|_I_D= 240 A,_R_Gon= 4.7 Ω,<br>_V_DD= 600 V,_V_GS= -3/18 V,<br>_t_dead= 1000 ns, 0.1 VGS<br>to 0.1 ID|_T_vj= 25 °C||78||ns| ||||_T_vj= 125 °C||78||| ||||_T_vj= 175 °C||78||| |Rise time (inductive load)|_t_r|_I_D= 240 A,_R_Gon= 4.7 Ω,<br>_V_DD= 600 V,_V_GS= -3/18 V,<br>_t_dead= 1000 ns, 0.1 IDto<br>0.9 ID|_T_vj= 25 °C||122||ns| ||||_T_vj= 125 °C||115||| ||||_T_vj= 175 °C||114||| |Turn-of delay time<br>(inductive load)|_t_d of|_I_D= 240 A,_R_Gof= 1 Ω,<br>_V_DD= 600 V,_V_GS= -3/18 V,<br>0.9 VGSto 0.9 ID|_T_vj= 25 °C||100||ns| ||||_T_vj= 125 °C||111||| ||||_T_vj= 175 °C||117||| |Fall time (inductive load)|_t_f|_I_D= 240 A,_R_Gof= 1 Ω,<br>_V_DD= 600 V,_V_GS= -3/18 V,<br>0.9 IDto 0.1 ID|_T_vj= 25 °C||25||ns| ||||_T_vj= 125 °C||26||| ||||_T_vj= 175 °C||27||| |Turn-on energy loss per<br>pulse|_E_on|_I_D= 240 A,_V_DD= 600 V,<br>_L_σ= 7 nH,_V_GS= -3/18 V,<br>_R_Gon= 4.7 Ω, di/dt =<br>5.7 kA/µs (Tvj= 175 °C),<br>_t_dead= 1000 ns|_T_vj= 25 °C||7.08||mJ| ||||_T_vj= 125 °C||7.15||| ||||_T_vj= 175 °C||7.16||| |Turn-on energy loss per<br>pulse, optimized|_E_on,o|_I_D= 240 A,_V_DD= 600 V,<br>_L_σ= 7 nH,_V_GS= -3/18 V,<br>_R_Gon,o= 3 Ω, di/dt =<br>7.1 kA/µs (Tvj= 175 °C),<br>_t_dead= 100 ns|_T_vj= 25 °C||4.51||mJ| ||||_T_vj= 125 °C||4.54||| ||||_T_vj= 175 °C||4.55||| **(table continues...)** Datasheet Revision 1.00 2024-11-12 6 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Body diode (MOSFET, T2 / T3)** |**Table 7**<br>**(continued) Characteristic values**|**Table 7**<br>**(continued) Characteristic values**|**Table 7**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-of energy loss per<br>pulse|_E_of|_I_D= 240 A,_V_DD= 600 V,<br>_L_σ= 7 nH,_V_GS= -3/18 V,<br>_R_Gof= 1 Ω, dv/dt = 17.5<br>kV/µs (Tvj= 175 °C)|_T_vj= 25 °C||3.02||mJ| ||||_T_vj= 125 °C||3.51||| ||||_T_vj= 175 °C||3.68||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per MOSFET,λgrease= 3.3|W/(m·K)||0.283||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| _**Note** : The selection of positive and negative gate-source voltages impacts losses and the long-term behavior of the MOSFET and body diode. The design guidelines described in Application Note AN 2018-09 and AN 2021-13 must be considered to ensure sound operation of the device over the planned lifetime._ _Tvj,op > 150°C is allowed for operation at overload conditions for MOSFET and body diode. For detailed specifications, please refer to AN 2021-13_ ## **4 Body diode (MOSFET, T2 / T3)** |**4**<br>**Body diode (MOSFET, T2 / T3)**|**4**<br>**Body diode (MOSFET, T2 / T3)**|**4**<br>**Body diode (MOSFET, T2 / T3)**|||||| |---|---|---|---|---|---|---|---| |**Table 8**<br>**Maximum rated values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |DC body diode forward<br>current|_I_SD|_T_vj= 175 °C,_V_GS= -3 V|_T_H= 65 °C||95||A| ||||||||| |**Table 9**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_SD|_I_SD= 240 A,_V_GS= -3 V|_T_vj= 25 °C||4.11|5.35|V| ||||_T_vj= 125 °C||3.85||| ||||_T_vj= 175 °C||3.75||| |Peak reverse recovery<br>current|_I_rrm|_I_SD= 240 A, dis/dt =<br>5.5 kA/µs,_V_DD= 600 V,<br>_V_GS= -3 V,_t_dead= 1000 ns|_T_vj= 25 °C||74||A| ||||_T_vj= 125 °C||109||| ||||_T_vj= 175 °C||134||| |Recovered charge|_Q_rr|_I_SD= 240 A, dis/dt =<br>5.5 kA/µs,_V_DD= 600 V,<br>_V_GS= -3 V,_t_dead= 1000 ns|_T_vj= 25 °C||1.3||µC| ||||_T_vj= 125 °C||2.7||| ||||_T_vj= 175 °C||3.9||| |Reverse recovery energy|_E_rec|_I_SD= 240 A, dis/dt =<br>5.5 kA/µs (Tvj= 175 °C),<br>_V_DD= 600 V,_V_GS= -3 V,<br>_t_dead= 1000 ns|_T_vj= 25 °C||0.38||mJ| ||||_T_vj= 125 °C||0.89||| ||||_T_vj= 175 °C||1.16||| ## **(table continues...)** Datasheet Revision 1.00 2024-11-12 7 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **5 IGBT, T5 / T6** |**Table 9**<br>**(continued) Characteristic values**|**Table 9**<br>**(continued) Characteristic values**|**Table 9**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Reverse recovery energy,<br>optimized|_E_rec,o|_I_SD= 240 A, dis/dt =<br>6.9 kA/µs (Tvj= 175 °C),<br>_V_DD= 600 V,_V_GS= -3 V,<br>_t_dead= 100 ns|_T_vj= 25 °C||0.46||mJ| ||||_T_vj= 125 °C||0.64||| ||||_T_vj= 175 °C||0.91||| ## **5 IGBT, T5 / T6** |**5**<br>**IGBT, T5 / T6**|**5**<br>**IGBT, T5 / T6**|**5**<br>**IGBT, T5 / T6**|**5**<br>**IGBT, T5 / T6**|**5**<br>**IGBT, T5 / T6**|**5**<br>**IGBT, T5 / T6**| |---|---|---|---|---|---| |**Table 10**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|950|V| |Implemented collector<br>current|_I_CN|||200|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|160|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||400|A| |Gate-emitter peak voltage|_V_GES|||±20|V| ## **Table 11 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 200 A,_V_GE= 15 V|_T_vj= 25 °C||1.30|1.40|V| ||||_T_vj= 125 °C||1.35||| ||||_T_vj= 150 °C||1.35||| |Gate threshold voltage|_V_GEth|_I_C= 3.25 mA, VCE= 20 V,_T_vj= 25 °C||4.15|4.9|5.65|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 600 V, Tvj= 25 °C|||2.05||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||1.5||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||24.6||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.114||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 950 V,_V_GE= 0 V|_T_vj= 25 °C|||32|µA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| **(table continues...)** Datasheet Revision 1.00 2024-11-12 8 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Diode, D1 / D4** |**Table 11**<br>**(continued) Characteristic values**|**Table 11**<br>**(continued) Characteristic values**|**Table 11**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 200 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gon= 18 Ω|_T_vj= 25 °C||0.269||ns| ||||_T_vj= 125 °C||0.255||| ||||_T_vj= 150 °C||0.235||| |Rise time (inductive load)|_t_r|_I_C= 200 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gon= 18 Ω|_T_vj= 25 °C||0.052||µs| ||||_T_vj= 125 °C||0.065||| ||||_T_vj= 150 °C||0.066||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 200 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gof= 82 Ω|_T_vj= 25 °C||3.420||µs| ||||_T_vj= 125 °C||3.580||| ||||_T_vj= 150 °C||3.590||| |Fall time (inductive load)|_t_f|_I_C= 200 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gof= 82 Ω|_T_vj= 25 °C||0.174||µs| ||||_T_vj= 125 °C||0.332||| ||||_T_vj= 150 °C||0.363||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 200 A,_V_CC= 600 V,<br>_L_σ= 7 nH,_V_GE= ±15 V,<br>_R_Gon= 18 Ω, di/dt = 2500<br>A/µs (Tvj= 150 °C)|_T_vj= 25 °C||25.6||mJ| ||||_T_vj= 125 °C||31.5||| ||||_T_vj= 150 °C||34.2||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 200 A,_V_CC= 600 V,<br>_L_σ= 7 nH,_V_GE= ±15 V,<br>_R_Gof= 82 Ω, dv/dt = 1600<br>V/µs (Tvj= 150 °C)|_T_vj= 25 °C||29.9||mJ| ||||_T_vj= 125 °C||37.7||| ||||_T_vj= 150 °C||40.1||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT,λgrease= 3.3 W/(m·K)|||0.517||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **6 Diode, D1 / D4** |**6**<br>**Diode, D1 / D4**|**6**<br>**Diode, D1 / D4**|**6**<br>**Diode, D1 / D4**|||| |---|---|---|---|---|---| |**Table 12**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |Continuous DC forward<br>current|_I_F|||300|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||600|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|7380|A²s| ||||_T_vj= 150 °C|6320|| Datasheet Revision 1.00 2024-11-12 9 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 Diode, D5 / D6** |**Table 13**<br>**Characteristic values**|**Table 13**<br>**Characteristic values**|**Table 13**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 160 A,_V_GE= 0 V|_T_vj= 25 °C||1.41|1.64|V| ||||_T_vj= 125 °C||1.28||| ||||_T_vj= 150 °C||1.25||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 600 V,_I_F= 160 A,<br>_V_GE= -15 V, -diF/dt =<br>2500 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||99||A| ||||_T_vj= 125 °C||143||| ||||_T_vj= 150 °C||155||| |Recovered charge|_Q_r|_V_CC= 600 V,_I_F= 160 A,<br>_V_GE= -15 V, -diF/dt =<br>2500 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||15||µC| ||||_T_vj= 125 °C||30||| ||||_T_vj= 150 °C||35||| |Reverse recovery energy|_E_rec|_V_CC= 600 V,_I_F= 160 A,<br>_V_GE= -15 V, -diF/dt =<br>2500 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||4.47||mJ| ||||_T_vj= 125 °C||9.81||| ||||_T_vj= 150 °C||11.8||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,λgrease= 3.3 W/(m·K)|||0.402||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **7 Diode, D5 / D6** |**7**<br>**Diode, D5 / D6**|**7**<br>**Diode, D5 / D6**|**7**<br>**Diode, D5 / D6**|||| |---|---|---|---|---|---| |**Table 14**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |Continuous DC forward<br>current|_I_F|||200|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||400|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|5060|A²s| ||||_T_vj= 150 °C|4920|| Datasheet Revision 1.00 2024-11-12 10 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 NTC-Thermistor** ## **Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 15**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 200 A,_V_GE= 0 V|_T_vj= 25 °C||1.72|2.10|V| ||||_T_vj= 125 °C||1.59||| ||||_T_vj= 150 °C||1.56||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 600 V,_I_F= 200 A,<br>_V_GE= -15 V, -diF/dt =<br>2800 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||101||A| ||||_T_vj= 125 °C||126||| ||||_T_vj= 150 °C||134||| |Recovered charge|_Q_r|_V_CC= 600 V,_I_F= 200 A,<br>_V_GE= -15 V, -diF/dt =<br>2800 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||12||µC| ||||_T_vj= 125 °C||25||| ||||_T_vj= 150 °C||30||| |Reverse recovery energy|_E_rec|_V_CC= 600 V,_I_F= 200 A,<br>_V_GE= -15 V, -diF/dt =<br>2800 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||3.57||mJ| ||||_T_vj= 125 °C||8.51||| ||||_T_vj= 150 °C||10.3||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,λgrease= 3.3 W/(m·K)|||0.447||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **8 NTC-Thermistor** |**8**<br>**NTC-Thermistor**|**8**<br>**NTC-Thermistor**|**8**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 16**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|Δ_R/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _**Note** : For an analytical description of the NTC characteristics please refer to AN2009-10, chapter 4._ Datasheet Revision 1.00 2024-11-12 11 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **9 Characteristics diagrams** **9 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Output characteristic (typical), IGBT, T1 / T4** IC = f(VCE) ## VGE = 15 V **Output characteristic field (typical), IGBT, T1 / T4** IC = f(VCE) ## T = 150 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 400 400<br>350 350<br>300 300<br>250 250<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2<br>Transfer characteristic (typical), IGBT, T1 / T4 Gate charge characteristic (typical), IGBT, T1 / T4<br>IC = f(VGE) VGE = f(QG)<br>VCE = 20 V IC = 200 A, Tvj = 25 °C<br>400 15<br>350<br>10<br>300<br>5<br>250<br>200 0<br>150<br>-5<br>100<br>-10<br>50<br>0 -15<br>4 5 6 7 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-11-12 12 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** ## **Capacity characteristic (typical), IGBT, T1 / T4** ## C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C ## **Switching times (typical), IGBT, T1 / T4** ## t = f(IC) RGoff = 82 Ω, RGon = 18 Ω, VCC = 600 V, -15 / 15 V, Tvj = 150 °C **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 100<br>100 10<br>10 1<br>1 0.1<br>0.1 0.01<br>0.01 0.001<br>0 10 20 30 40 50 60 70 80 90 100 0 50 100 150 200 250 300 350 400 450<br>Switching times (typical), IGBT, T1 / T4 Switching losses (typical), IGBT, T1 / T4<br>t = f(RG) E = f(IC)<br>IC = 200 A, VCC = 600 V, VGE = -15 / 15 V, Tvj = 150 °C RGoff = 82 Ω, RGon = 18 Ω, VCC = 600 V, RGE = -15 / 15 V<br>100 100<br>90<br>80<br>10<br>70<br>60<br>1 50<br>40<br>30<br>0.1<br>20<br>10<br>0.01 0<br>0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 400 450<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-11-12 13 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **9 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Switching losses (typical), IGBT, T1 / T4** E = f(RG) ## IC = 200 A, VCC = 600 V, VGE = -15 / 15 V **Reverse bias safe operating area (RBSOA), IGBT, T1 / T4** IC = f(VCE) RGoff = 82 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 350 500<br>450<br>300<br>400<br>250<br>350<br>300<br>200<br>250<br>150<br>200<br>150<br>100<br>100<br>50<br>50<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 200 400 600 800 1000 1200 1400<br>Transient thermal impedance, IGBT, T1 / T4 Output characteristic (typical), MOSFET, T2 / T3<br>Zth = f(t) ID = f(VDS)<br>VGS = 15 V<br>1 480<br>420<br>360<br>300<br>0.1 240<br>180<br>120<br>60<br>0.01 0<br>0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-11-12 14 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** **Output characteristic (typical), MOSFET, T2 / T3 Output characteristic field (typical), MOSFET, T2 / T3** ID = f(VDS) ID = f(VDS) VGS = 18 V Tvj = 175 °C **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 480 480<br>420 420<br>360 360<br>300 300<br>240 240<br>180 180<br>120 120<br>60 60<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 1 2 3 4 5<br>Drain source on-resistance (typical), MOSFET, T2 / T3 Drain source on-resistance (typical), MOSFET, T2 / T3<br>RDS(on) = f(Tvj) RDS(on) = f(ID)<br>ID = 240 A VGS = 18 V<br>7.0 7.5<br>6.5 7.0<br>6.0 6.5<br>5.5 6.0<br>5.0 5.5<br>4.5 5.0<br>4.0 4.5<br>3.5 4.0<br>3.0 3.5<br>2.5 3.0<br>2.0 2.5<br>-50 -25 0 25 50 75 100 125 150 175 0 60 120 180 240 300 360 420 480<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-11-12 15 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **9 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Transfer characteristic (typical), MOSFET, T2 / T3** **Gate-source threshold voltage (typical), MOSFET, T2 / T3** ID = f(VGS) VDS = 20 VDS = 20 V = 20 V **==> picture [540 x 601] intentionally omitted <==** **----- Start of picture text -----**<br> VDS = 20 VDS = 20 V = 20 V VGS(th) = f(Tvj)<br>VGS = VDS , ID = 112 mA<br>480 5.0<br>4.8<br>420<br>4.6<br>360<br>4.4<br>300<br>4.2<br>240<br>4.0<br>180<br>3.8<br>120<br>3.6<br>60 3.4<br>0 3.2<br>4 5 6 7 8 9 10 11 -50 -25 0 25 50 75 100 125 150 175<br>Gate charge characteristic (typical), MOSFET, T2 / T3 Capacity characteristic (typical), MOSFET, T2 / T3<br>VGS = f(QG) C = f(VDS)<br>ID = 240 A, Tvj = 25 °C f = 100 kHz, Tvj = 25 °C, VGS = 0 V<br>18 100<br>15<br>10<br>12<br>9<br>1<br>6<br>3<br>0.1<br>0<br>-3 0.01<br>0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.1 1 10 100 1000<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-11-12 16 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** ## **Switching times (typical), MOSFET, T2 / T3** ## t = f(ID) VDD = 600 V, RGon = 4.7 Ω, RGon,o = 3 Ω, Tvj = 175 °C, VGS = -3/18 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0.18<br>0.16<br>0.14<br>0.12<br>0.10<br>0.08<br>0.06<br>0.04<br>0.02<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br> ## **Switching times (typical), MOSFET, T2 / T3** ## t = f(RG) VDD = 600 V, tdead = 1000 ns, ID = 240 A, Tvj = 175 °C, VGS = -3/18 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0 5 10 15 20 25 30 35 40 45 50<br>**----- End of picture text -----**<br> ## **Switching times (typical), MOSFET, T2 / T3** ## t = f(ID) RGoff = 1 Ω, VDD = 600 V, Tvj = 175 °C, VGS = -3/18 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0.1<br>0.01<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br> ## **Current slope (typical), MOSFET, T2 / T3** di/dt = f(RG) VDD = 600 V, tdead = 1000 ns, ID = 240 A, VGS = -3/18 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 7.0<br>6.0<br>5.0<br>4.0<br>3.0<br>2.0<br>1.0<br>0.0<br>0 10 20 30 40 50<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-11-12 17 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **9 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Voltage slope (typical), MOSFET, T2 / T3** dv/dt = f(RG) VDD = 600 V, ID = 240 A, VGS = -3/18 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 2 4 6 8 10 12<br>**----- End of picture text -----**<br> ## **Switching losses (typical), MOSFET, T2 / T3** Eoff = f(ID) RGoff = 1 Ω, VDD = 600 V, VGS = -3/18 V ## **Switching losses (typical), MOSFET, T2 / T3** Eon = f(ID) RGon = 4.7 Ω, VDD = 600 V, RGon,o = 3 Ω, VGS = -3/18 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 50 100 150 200 250 300 350 400 450 500<br>**----- End of picture text -----**<br> **Switching losses (typical), MOSFET, T2 / T3** E = f(RG) VDD = 600 V, tdead = 1000 ns, ID = 240 A, VGS = -3/18 V **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 14 60<br>55<br>12<br>50<br>45<br>10<br>40<br>8 35<br>30<br>6 25<br>20<br>4<br>15<br>10<br>2<br>5<br>0 0<br>0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 12<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-11-12 18 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **9 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Switching losses (typical), MOSFET, T2 / T3** Eon = f(VGS(off)) VDD = 600 V, VGS(on) = 18 V, ID = 240 A, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>-5 -4 -3 -2 -1 0<br>**----- End of picture text -----**<br> ## **Reverse bias safe operating area (RBSOA), MOSFET, T2 / T3** ## **Switching losses (typical), MOSFET, T2 / T3** Eon = f(tdead) RGon = 4.7 Ω, ID = 240 A, VDD = 600 V, VGS = -3/18 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 105.0<br>102.5<br>100.0<br>97.5<br>95.0<br>92.5<br>90.0<br>87.5<br>85.0<br>0 100 200 300 400 500 600 700 800 900 1000<br>**----- End of picture text -----**<br> **Transient thermal impedance, MOSFET, T2 / T3** Zth = f(t) ID = f(VDS) RGoff = 1 Ω, Tvj = 175 °C, VGS = -3/18 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 700<br>600<br>500<br>400<br>300<br>200<br>100<br>0<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-11-12 19 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** **Forward characteristic body diode (typical), MOSFET, Forward voltage of body diode (typical), MOSFET, T2 / T2 / T3 T3** ISD = f(VSD)SD = f(VSD) = f(VSD)SD)) VSD = f(Tvj)SD = f(Tvj) = f(Tvj)vj)) Tvj = 25 °Cvj = 25 °C = 25 °C ISD = 240 ASD = 240 A = 240 A **==> picture [540 x 601] intentionally omitted <==** **----- Start of picture text -----**<br> ISD = f(VSD)SD = f(VSD) = f(VSD)SD)) VSD = f(Tvj)SD = f(Tvj) = f(Tvj)vj))<br>Tvj = 25 °Cvj = 25 °C = 25 °C ISD = 240 ASD = 240 A = 240 A<br>400 4.5<br>4.0<br>350<br>3.5<br>300<br>3.0<br>250<br>2.5<br>200<br>2.0<br>150<br>1.5<br>100<br>1.0<br>50 0.5<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 25 50 75 100 125 150 175<br>Switching losses body diode (typical), MOSFET, T2 / T3 Switching losses body diode (typical), MOSFET, T2 / T3<br>Erec = f(ISD) Erec = f(RG)<br>RGon = 4.7 Ω, RGon,o = 3 Ω, VDD = 600 V tdead = 1000 ns, ISD = 240 A, VDD = 600 V<br>2.50 1.5<br>2.25<br>2.00 1.2<br>1.75<br>1.50 0.9<br>1.25<br>1.00 0.6<br>0.75<br>0.50 0.3<br>0.25<br>0.00 0.0<br>0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30 35 40 45 50<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-11-12 20 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** **Switching losses body diode (typical), MOSFET, T2 / T3 Switching losses body diode (typical), MOSFET, T2 / T3** Erec = f(VGS(off)) Erec = f(tdead) RGoff = 1 Ω, RGon = 4.7 Ω, VGS(on) = 18 V, ISD = 240 A, RGon,o = 3 Ω, VDD = 600 V, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1.80<br>1.60<br>1.40<br>1.20<br>1.00<br>0.80<br>0.60<br>0.40<br>0.20<br>0.00<br>-5 -4 -3 -2 -1 0<br>**----- End of picture text -----**<br> **Output characteristic (typical), IGBT, T5 / T6** IC = f(VCE) VGE = 15 V RGon = 4.7 Ω, ID = 240 A, VDD = 600 V, VGS = -3/18 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 110<br>100<br>90<br>80<br>70<br>60<br>50<br>0 100 200 300 400 500 600 700 800 900 1000<br>**----- End of picture text -----**<br> **Output characteristic field (typical), IGBT, T5 / T6** IC = f(VCE) T = 150 °C vj **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 400 400<br>350 350<br>300 300<br>250 250<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-11-12 21 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** ## **Transfer characteristic (typical), IGBT, T5 / T6** ## IC = f(VGE) ## VCE = 20 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>4 5 6 7 8<br>**----- End of picture text -----**<br> **Capacity characteristic (typical), IGBT, T5 / T6** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C ## **Gate charge characteristic (typical), IGBT, T5 / T6** VGE = f(QG) IC = 200 A, Tvj = 25 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>10<br>5<br>0<br>-5<br>-10<br>-15<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, T5 / T6** t = f(IC) RGoff = 82 Ω, RGon = 18 Ω, VCC = 600 V, VGE = -15 / 15 V, Tvj = 150 °C **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 100<br>100<br>10<br>10<br>1<br>1<br>0.1<br>0.1<br>0.01 0.01<br>0 10 20 30 40 50 60 70 80 90 100 0 50 100 150 200 250 300 350 400<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-11-12 22 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** ## **Switching times (typical), IGBT, T5 / T6** ## t = f(RG) IC = 200 A, VCC = 600 V, VGE = -15 / 15 V, Tvj = 150 °C ## **Switching losses (typical), IGBT, T5 / T6** ## E = f(IC) RGoff = 82 Ω, RGon = 18 Ω, VCC = 600 V, VGE = -15 / 15 V **==> picture [540 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 100 90<br>80<br>70<br>10<br>60<br>50<br>1<br>40<br>30<br>0.1<br>20<br>10<br>0.01 0<br>0 100 200 300 400 500 600 700 800 900 0 50 100 150 200 250 300 350 400<br>Switching losses (typical), IGBT, T5 / T6 Reverse bias safe operating area (RBSOA), IGBT, T5 /<br>E = f(RG) T6<br>IC = 200 A, VCC = 600 V, VGE = -15 / 15 V IC = f(VCE)<br>RGoff = 82 Ω, VGE = ±15 V, Tvj = 150 °C<br>350 500<br>450<br>300<br>400<br>250<br>350<br>300<br>200<br>250<br>150<br>200<br>150<br>100<br>100<br>50<br>50<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-11-12 23 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** ## **Transient thermal impedance, IGBT, T5 / T6** Zth = f(t) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> ## **Switching losses (typical), Diode, D1 / D4** Erec = f(IF) RG = 18 Ω, VCC = 600 V ## **Forward characteristic (typical), Diode, D1 / D4** IF = f(VF) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 320<br>280<br>240<br>200<br>160<br>120<br>80<br>40<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0<br>**----- End of picture text -----**<br> **Switching losses (typical), Diode, D1 / D4** Erec = f(RG) IF = 160 A, VCC = 600 V **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 20 16<br>18<br>14<br>16<br>12<br>14<br>10<br>12<br>10 8<br>8<br>6<br>6<br>4<br>4<br>2<br>2<br>0 0<br>0 40 80 120 160 200 240 280 320 0 20 40 60 80 100 120 140 160 180 200<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-11-12 24 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **9 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** **Transient thermal impedance, Diode, D1 / D4** Zth = f(t) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> ## **Switching losses (typical), Diode, D5 / D6** Erec = f(IF) RGon = 18 Ω, VCC = 600 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 40 80 120 160 200 240 280 320 360 400<br>**----- End of picture text -----**<br> ## **Forward characteristic (typical), Diode, D5 / D6** IF = f(VF) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50<br>**----- End of picture text -----**<br> **Switching losses (typical), Diode, D5 / D6** Erec = f(RG) IF = 200 A, VCC = 600 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-11-12 25 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Characteristics diagrams** **==> picture [540 x 297] intentionally omitted <==** **----- Start of picture text -----**<br> Transient thermal impedance, Diode, D5 / D6 Temperature characteristic (typical), NTC-Thermistor<br>Zth = f(t) R = f(TNTC)<br>1 100000<br>10000<br>0.1 1000<br>100<br>0.01 10<br>0.001 0.01 0.1 1 10 0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-11-12 26 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Circuit diagram** |**10**|||**Circuit diagram**|**Circuit diagram**|**Circuit diagram**|**Circuit diagram**||||| |---|---|---|---|---|---|---|---|---|---|---| |||||||||||J| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| |||||||||||| ## **Figure 1** Datasheet Revision 1.00 2024-11-12 27 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **11 Package outlines** **==> picture [105 x 47] intentionally omitted <==** ## **11 Package outlines** **==> picture [327 x 618] intentionally omitted <==** **----- Start of picture text -----**<br> 4x<br>Dimensioned for self tapping screw n 2,5mm<br>choose length according to PCB thickness<br>max. screw-in depth 8,5mm<br>( n 4,2) 2x dimensioned for M5 screw<br>14<br>0<br>14<br>(99,3±0,1) Distance of threaded holes in heat sink<br>110±0,45<br>module labeling<br>recommended pcb design height<br>pcb hole pattern<br>4x n 3,5 ( optional hole for self tapping screw n 2,5mm)<br>26 P1 G1 E1 X3 X4 S2<br>24<br>20,8<br>17,6 G2<br>14,4<br>4,88 M1 X1<br>E5 G5<br>0<br>1,6 G6 X2<br>4,8 M1<br>8<br>11,2 E6<br>14,4 G4<br>17,6 N1<br>20,8 E4<br>24<br>26 S3 G3 AC1<br>- Details about hole specification for contacts refer to AN2009-01 chapter 2<br>- Diameters of drill n 1,15mm<br>- Copper thickness in hole 25~50um<br>62±0,45<br>n 4)(3,<br>47,43 0 47,43<br>(12)<br>12,2±0,1 (16,4)<br>12<br>n<br>2x according to screw head washer to mount module to heat sink<br>44,43 36,08 32,88 29,68 26,48 7,28 4,08 0 4,08 7,28 10,48 16,88 26,48 32,88 36,08 44,43<br>**----- End of picture text -----**<br> ## **Figure 2** Datasheet Revision 1.00 2024-11-12 28 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **12 Module label code** ## **12 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.00 2024-11-12 29 **F3L3MR12W3M1H_H11 EasyPACK[™] module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document version**|**Date of release**|**Description of changes**| |0.10|2023-12-20|Initial version| |1.00|2024-11-12|Final datasheet| Datasheet Revision 1.00 2024-11-12 30 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2024-11-12 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2024 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABI978-002** Infineon Technologies in customer’s applications. ## 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For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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