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F3L300R07PE4BOSA1
IGBT Module, Three level Inverter, 300 A, 1.55 V, 940 W, 150 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:300A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:940W; Collector Emitter Voltage V(br)ceo:650V; Transistor
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPACK 4
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 940W
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 300A
- Power Dissipation Pd: 940W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 300A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.55V
- Collector Emitter Saturation Voltage Vce(on): 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 6 |
| Price | 97.61 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules ## F3L300R07PE4 J | ~~I~~ i 4) VCES = 650V IC nom = 300A / ICRM = 600A - 3-Level-Applikationen - - - - T - VCEsat - - - - - Standardgehäuse - 3-Level-Applications - - - - T - VCEsat - - - - - 1 ## Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules F3L300R07PE4 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>F3L300R07PE4<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:AS<br>approvedby:MK<br>dateofpublication:2013-11-05<br>revision:2.1<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 70°C, Tvj max= 175°C<br>IC nom<br>300<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>600<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>940<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>IC= 300 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,95<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 4,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>3,00<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>18,5<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,57<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 2,0Ω<br>td on<br>0,11<br>0,12<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 2,0Ω<br>tr<br>0,05<br>0,06<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 2,0Ω<br>td off<br>0,49<br>0,52<br>0,53<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 300 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 2,0Ω<br>tf<br>0,05<br>0,07<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 300 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 3400 A/µs (Tvj= 150°C)<br>RGon= 2,0Ω<br>Eon<br>1,50<br>2,00<br>2,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 300 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3300 V/µs (Tvj= 150°C)<br>RGoff= 2,0Ω<br>Eoff<br>14,0<br>17,5<br>18,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1500<br>1200<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤10 µs,<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,16<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,063<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 > IGBT-ModuleIGBT-modules F3L300R07PE4 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|300|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|6000<br>5600<br>|A²s<br>A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||145<br>195<br>210||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 300 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||11,0<br>21,0<br>24,0||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||3,50<br>6,10<br>7,00||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,32|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,125||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| prepared�by:�AS approved�by:�MK date�of�publication:�2013-11-05 revision:�2.1 3 > IGBT-ModuleIGBT-modules F3L300R07PE4 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** **Vorläufige�Daten Preliminary�Data** ## **Diode,�3-Level�/�Diode,�3-Level Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|300|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|6000<br>5600<br>|A²s<br>A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>IF= 300 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 300 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||145<br>195<br>210||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 300 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||11,0<br>21,0<br>24,0||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 300 A, - diF/dt = 3400 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||3,50<br>6,10<br>7,00||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,32|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,125||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�AS date�of�publication:�2013-11-05 approved�by:�MK revision:�2.1 4 IGBT-Module IGBT-modules ## F3L300R07PE4 |Modul / Module||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||4,0<br>Cu||kV| |Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3||| |Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||25,0<br>12,5||mm| |Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||11,0<br>7,0||mm| |Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200||| ||||min.|typ.|max.|| |Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W| |Modulstreuinduktivität<br>Lagertemperatur<br>~~Stray inductance module~~<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>~~ee~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|LsCE<br>Tstg<br>M<br> ~~ee ee~~|45<br>-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||nH<br>°C<br>Nm| |Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M6<br>- Montage gem. gultiger Applikationsschrift<br>Screw M6<br>- Mounting according to valid application note|M|3,0|-|6,0|Nm| |Gewicht<br>Weight||G||400||g| 5 ## IGBT-Module IGBT-modules Technische Information F3L300R07PE4 / Technical Information **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>600 600<br>Tvj = 25°C VGE = 19V<br>550 [eee Tvj = 125°C | | 550 e VGE = 17V eZn<br>Tvj = 150°C VGE = 15V<br>500 500 VGE = 13V<br>Eee Piee a | tt<br>VGE = 11V<br>450 p e 450 VGE = 9V PASI : E<br>v | T t |<br>400 SERRREREP AZ 400 TT =<br>27000 eee ee [e] [e] [e]<br>PEE<br>350 350<br>Aber Ee<br>ii /<br>300 300<br>iG ty<br>SRRRRES Re eeeeee<br>250 250<br>SERREEP iORR eee ‘Ae<br>200 200<br>SERREE —<br>150 150<br>[e] [e]<br>100 100<br>PEP [PTA] Eee e ae<br>50 50<br>EEREBEEZ Alot)a -E wi}f<br>0 0<br>a AREER iF; | tt<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =2 Ω ,R Goff =2 Ω ,V CE =300V<br>600 50<br>Tvj = 25°C Eon, Tvj = 125°C<br>550 Mm Tvj = 125°C LL 45 jm Eoff Lilly , Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>500 a oT ee Eoff, Tvj = 150°C ’<br>40<br>450<br>po} t t :<br>35<br>400<br>po} | e s<br>30<br>350<br>po} te i<br>300 25<br>Se tt | a<br>ee<br>250<br>20<br>ee eee eee<br>ee A<br>200<br>ee ee<br>15<br>150<br>10<br>ee Ae -<br>100 7 ae<br>5<br>50<br>0 0<br>p oe spTS<br>5 6 7 8 9 10 11 12 0 100 200 300 400 500 600<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 6 IGBT-Module IGBT-modules ## F3L300R07PE4 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =300A,V CE =300V<br>35 1<br>—$$— Eon, Tvj = 125°C | S ZthJC : IGBT eeS<br>Eoff, Tvj = 125°C HH—ro r E E HH} tHee<br>30 | Eon, Tvj = 150°C eee<br>Eoff, Tvj = 150°C<br>ES| I i tf | |7 aeate |r<br>25<br>vA EY TUM | UY | a<br>0,1<br>aol po SE C T<br>20 —t —[ ll.=" -|7 vaas aPTFEE TTE7eee H HH<br>15 a ae aayyoVA rTaTyTT| |<br>vA TT<br>0,01<br>TTA CT<br>10 7 PAett<br>5 lialUA |) dd. YtZePTrr TTTTt T ee ee ee i: 1 eee 2 T 3 4 ||<br>ri[K/W]: 0,0096 0,0528 0,0512 0,0464<br>τ i[s]: 0,01 0,02 0,05 0,1<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 20 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT, Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =2 Ω ,T vj =150°C<br>700 600<br>IC, Chip Tvj = 25°C<br>IC, Modul short path 540 Tvj = 125°C<br>600 IC, Modul long path Tvj = 150°C<br>480<br>500<br>420<br>i; See<br>360<br>400 MN ee<br>: SERRE<br>300<br>wA ee<br>300 Pt pt \7.a ;‘y<br>: SRR<br>240180 TTTi / /|<br>200 TT rT<br>120<br>100<br>: Ppt<br>60<br>Pte gy |<br>0 0<br>a ) e ee<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 7 IGBT-Module IGBT-modules ## F3L300R07PE4 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F) Erec =f(R G)<br>RGon Js Ω ,V CE =300V IF = 300 A, V CE = 300 V<br>10 10<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>9 Erec, Tvj = 150°C 9 Erec, Tvj = 150°C<br>Fe} I R<br>8 8<br>i e e<br>7 7<br>Tt EN<br>6 6<br>Poe ee<br>5 5<br>4 4<br>3 3<br>Fy ae [ee]<br>2 2<br>Aee Oei<br>AOO<br>1 1<br>0 0<br>0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 16 18 20<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Durchlasskennlinie der Diode, 3-Level (typisch)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, 3-Level (typical)<br>ZthJC = f (t) IF =f(V F)<br>1 600<br>ZthJC : Diode Tvj = 25°C<br>H—oe a FH eee 540 m Tvj = 125°C J ll).W<br>A Tvj = 150°C<br>| ll Eb TT ae‘J<br>480<br>TN 420 Pe TT | | dd) LA<br>a ee a Senne<br>360<br>v4<br>0,1 300<br>PTSaathTTTeee eeeaae eae ee<br>PT TT ET 240 iA<br>|PL TANT TET EET TET 180 Pt ttt faeiy ff<br>a el 120 PT | | ft fay) | de<br>i: 1 2 3 4<br>PATI (CELI r τ ii[K/W]: [s]: 0,0192 0,01 0,1056 0,02 ET 0,1024 0,05 0,0928 0,1 E 60 ac 7eeen<br>J Sell 0 Ceeoe<br>0,01 0<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJC [A]IF<br>Z<br>**----- End of picture text -----**<br> 8 IGBT-Module IGBT-modules ## F3L300R07PE4 **==> picture [487 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJC =f (t) R=f(T)<br>1 (ee 100000 _—————S Jp pp tp pt<br>A ZthJC : Diode eo — Rtyp —————<br>(TTtoo I T TT a ce r SS<br>| J<br>a er ee ee<br>REET IRERIIV eM antl OB 10000 o<br>COMI e m KC<br>/ a<br>0,1 YTJ}hE UT TTTAoT TTT TTT TTT TTT] ee Ne eee ee<br>YT||| TT TT TT TTT aaNaN\ eee<br>a a ee || 1000 —————————————<br>a a a | a<br>At a a<br>i: 1 2 3 4<br>ri[K/W]: 0,0192 0,1056 0,1024 0,0928<br>/ CO τ i[s]: 0,01 0,02 0,05 0,1 A GS<br>0,01 TMC omc 100 ee ee<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br> 9 Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules F3L300R07PE4 **==> picture [86 x 38] intentionally omitted <==** **==> picture [477 x 191] intentionally omitted <==** **----- Start of picture text -----**<br> Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�circuit_diagram_headline<br>J<br>Gehäuseabmessungen�/�package�outlines<br>**----- End of picture text -----**<br> **==> picture [125 x 95] intentionally omitted <==** **==> picture [57 x 54] intentionally omitted <==** **==> picture [319 x 25] intentionally omitted <==** **----- Start of picture text -----**<br> prepared�by:�AS date�of�publication:�2013-11-05<br>approved�by:�MK revision:�2.1<br>**----- End of picture text -----**<br> 10 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## F3L300R07PE4 ## **Nutzungsbedingungen** application. 11
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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