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F3L25R12W1T4B27BOMA1
IGBT Module, Three level Inverter, 45 A, 1.85 V, 215 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 19Pins
- Product Range: -
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 215W
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- Transistor Polarity: Quad N Channel
- DC Collector Current: 45A
- Power Dissipation Pd: 215W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 45A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.85V
- Collector Emitter Saturation Voltage Vce(on): 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 19.52 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules F3L25R12W1T4_B27
**==> picture [4 x 4] intentionally omitted <==**
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VCES = 1200V IC nom = 25A / ICRM = 50A
- 3-Level-Applikationen
-
- 3-Level-Applications
-
-
-
- CEsat
-
-
- CEsat
- Al2O3 Substrat mit kleinem thermischen Widerstand
-
-
- Robuste Montage durch integrierte Befestigungsklammern
- Al2O3
-
-
- Rugged mounting due to integrated mounting clamps
1
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules F3L25R12W1T4_B27
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
**IGBT,�T1�/�T4�/�IGBT,�T1�/�T4 Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>F3L25R12W1T4_B27<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:CM<br>approvedby:MB<br>dateofpublication:2013-11-25<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,T1/T4/IGBT,T1/T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>25<br>45<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>50<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>215<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,20<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,45<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,05<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 25 A, VCE= 350 V<br>VGE= 15 V<br>RGon= 10Ω<br>td on<br>0,035<br>0,035<br>0,035<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 25 A, VCE= 350 V<br>VGE= 15 V<br>RGon= 10Ω<br>tr<br>0,014<br>0,018<br>0,019<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 25 A, VCE= 350 V<br>VGE= 15 V<br>RGoff= 10Ω<br>td off<br>0,215<br>0,275<br>0,285<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 25 A, VCE= 350 V<br>VGE= 15 V<br>RGoff= 10Ω<br>tf<br>0,056<br>0,08<br>0,09<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 25 A, VCE= 350 V, LS= 40 nH<br>VGE= 15 V, di/dt = 1600 A/µs (Tvj= 150°C)<br>RGon= 10Ω<br>Eon<br>0,30<br>0,50<br>0,56<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 25 A, VCE= 350 V, LS= 40 nH<br>VGE= 15 V, du/dt = 2500 V/µs (Tvj= 150°C)<br>RGoff= 10Ω<br>Eoff<br>1,00<br>1,40<br>1,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>90<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,65<br>0,70<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,70<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules F3L25R12W1T4_B27
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Diode,�D2�/�D3�/�Diode,�D2�/�D3**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|25|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|130<br>115|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,35<br>1,30<br>1,25|t.b.d.|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 1600 A/µs (Tvj=150°C)<br>VR= 350 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||24,0<br>28,0<br>30,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 25 A, - diF/dt = 1600 A/µs (Tvj=150°C)<br>VR= 350 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,20<br>1,60<br>1,65||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 1600 A/µs (Tvj=150°C)<br>VR= 350 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,22<br>0,32<br>0,39||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||1,10|1,20|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,75||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
prepared�by:�CM approved�by:�MB
date�of�publication:�2013-11-25 revision:�2.0
3
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules F3L25R12W1T4_B27
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **IGBT,�T2�/�T3�/�IGBT,�T2�/�T3**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>F3L25R12W1T4_B27<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:CM<br>approvedby:MB<br>dateofpublication:2013-11-25<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>30<br>45<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>60<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>150<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,65<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,051<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 350 V<br>VGE= 15 V<br>RGon= 10Ω<br>td on<br>0,028<br>0,028<br>0,028<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 30 A, VCE= 350 V<br>VGE= 15 V<br>RGon= 10Ω<br>tr<br>0,01<br>0,013<br>0,014<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 350 V<br>VGE= 15 V<br>RGoff= 10Ω<br>td off<br>0,22<br>0,235<br>0,24<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 30 A, VCE= 350 V<br>VGE= 15 V<br>RGoff= 10Ω<br>tf<br>0,055<br>0,067<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 350 V, LS= 40 nH<br>VGE= 15 V, di/dt = 2200 A/µs (Tvj= 150°C)<br>RGon= 10Ω<br>Eon<br>0,47<br>0,63<br>0,70<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 350 V, LS= 40 nH<br>VGE= 15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 10Ω<br>Eoff<br>0,82<br>1,00<br>1,10<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>210<br>150<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,90<br>1,00<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,85<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
4
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules F3L25R12W1T4_B27
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Diode,�D1�/�D4�/�Diode,�D1�/�D4**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|25|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>75,0<br>|A²s<br>A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,25|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 1850 A/µs (Tvj=150°C)<br>VR= 350 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||66,0<br>70,0<br>70,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 25 A, - diF/dt = 1850 A/µs (Tvj=150°C)<br>VR= 350 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,75<br>3,50<br>4,00||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 1850 A/µs (Tvj=150°C)<br>VR= 350 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,63<br>1,10<br>1,15||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,95|1,05|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,85||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�CM date�of�publication:�2013-11-25 approved�by:�MB revision:�2.0
5
## Technische�Information�/�Technical�Information
## IGBT-Module IGBT-modules F3L25R12W1T4_B27
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||AI2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||30||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||5,00<br>6,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|Gewicht<br>Weight||G||24||g|
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin.
prepared�by:�CM approved�by:�MB
date�of�publication:�2013-11-25 revision:�2.0
6
IGBT-Module IGBT-modules
## F3L25R12W1T4_B27
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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>50 | 50<br>Tvj = 25°C VGE = 19V<br>45 Tvj = 125°C | , a 45 e V s GE = 17V | fo<br>Tvj = 150°C | Vv [tee] ‘ | | VGE = 15V LAA | be<br>VGE = 13V<br>40 ee 40 | VGE = 11V LA<br>e e e ma Ul ra 7<br>VGE = 9V<br>P e PE fe<br>35 35<br>30 30<br>Pp vee e ee<br>25 25<br>PtP ot A Ee<br>Ae ' a / vA‘<br>20 20<br>15 ee ee 15<br>10 10<br>ee ee ee<br>5 5<br>pus LA<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 1,0 2,0 3,0 4,0 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT, T1 / T4 (typisch) Schaltverluste IGBT, T1 / T4 (typisch)<br>transfer characteristic IGBT, T1 / T4 (typical) switching losses IGBT, T1 / T4 (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =4+15V,R Gon =10 Ω ,R Goff =10 Ω ,V CE =350V<br>50 3,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>45 Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>2,5 Eoff, Tvj = 150°C<br>40<br>e e l Oe a a =<br>Ree ee a<br>35<br>2,0<br>pp F<br>30 Vann<br>alee<br>25 1,5<br>i“ 7<br>Sie<br>20<br>1,0<br>15<br>pt | AE ce aoa<br>i vy “\<br>10<br>ee ‘ aa<br>0,5<br>i Ae Het<br>5<br>0 poe 0,0 eile<br>5 6 7 8 9 10 11 12 13 0 5 10 15 20 25 30 35 40 45 50<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-Module IGBT-modules
## F3L25R12W1T4_B27
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Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =4+15V,1 C =25A,V CE =350V<br>3,0 10 PtTTT<br>Eon, Tvj = 125°C |A ZthJH : IGBT PET coco TT [TTT]<br>Eoff, Tvj = 125°C<br>Eon, Tvj = 150°C<br>2,5 E Eoff, Tvj = 150°C L oli, aooo a ll<br>4 a | el<br>TT L<br>2,0<br>1,5 1<br>rT TTTTT]<br>er’ | PEt ete<br>ea ee en ll<br>1,00,5 lyZyAAry) |] df Pa0Pye LAC) | LOFT<br>i: 1 2 3 4<br>ri[K/W]: 0,078 0,181 0,547 0,544<br>4 τ UN i[s]: 0,0005 TTT 0,005 0,05 EH 0,2<br>0,0 0,1<br>0 10 20 30 40 50 60 70 80 90 100 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT, T1 / T4 (RBSOA) Durchlasskennlinie der Diode, D2 / D3 (typisch)<br>reverse bias safe operating area IGBT, T1 / T4 (RBSOA) forward characteristic of Diode, D2 / D3 (typical)<br>IC CE) IF F)<br>VGE SVR Goff =10 Ω ,T vj =150°C a<br>55 50<br>IC, Modul Tvj = 25°C<br>50 FeL I C , Chip ET 45 TTvjvj = 125°C = 150°C<br>45 been Fe ee | 40 Rea a a<br>40<br>ee 35 it f<br>35<br>30<br>‘<br>30 pF 7<br>| 25 es —<br>25 ee ee eee EL<br>20 i<br>20<br>Teer], {| typ<br>15<br>15<br>10<br>10<br>5 Fa esee 5 es)<br>| PY a,<br>0 P| | 0 i eae<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
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IGBT-Module IGBT-modules
## F3L25R12W1T4_B27
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Erec =f(I F) Erec =f(R G)<br>RGon an Ω »,V CE =350V IF my CE = 350 V<br>0,50 0,45<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>0,45 Erec, Tvj = 150°C 0,40 Erec, Tvj = 150°C<br>0,40<br>TTT T rte 0,35 PRT TT<br>PL T TT<br>0,35 | et per \<br>PE dee“eA 0,30 PAN\IEE<br>0,30 |<br>a INN<br>0,25<br>EEaVaReeee EE EE<br>0,25<br>GF PEAS<br>0,20<br>0,20<br>0,15<br>EEE EE<br>0,15<br>PPCCECEEL 0,10 PEE Ne<br>0,10 A = COOP SNEED<br>0,05 PEOPLE 0,05 COLL EEE<br>0,00 0,00<br>0 5 10 15 20 25 30 35 40 45 50 0 10 20 30 40 50 60 70 80 90 100<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, D2 / D3 Ausgangskennlinie IGBT, T2 / T3 (typisch)<br>transient thermal impedance Diode, D2 / D3 output characteristic IGBT, T2 / T3 (typical)<br>ZthJH IC CE)<br>VGE<br>10 60<br>| ieee ZthJH: Diode tat ast st aera Tvj — = 25°C ]<br>Tt ioo T T Tvj = 125°C 7, -<br>Tvj = 150°C<br>TV | e e<br>CE ETE 50 rd s CO PD<br>PI ETE ECT J<br>40<br>NV! SeeT nl are one<br>1 SL IM M «=| 30 Ep ef r=<br>eat(| TetetTT TTT TTT TTT] a / jfeae<br>PeZT ae aae<br>ZLa TE aTEllTTT 20 rT UTUT<br>en a e i: 1 2 3 4 10 i) ae<br>ri[K/W]: 0,344 0,426 0,657 0,423<br>τ Tm i[s]: 0,0005 COMI 0,005 0,05 0,2 1 p e<br>0,1 0 | |<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>t [s] VCE [V]<br>E [mJ] E [mJ]<br> [K/W]thJH [A]IC<br>Z<br>**----- End of picture text -----**<br>
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## IGBT-Module IGBT-modules Technische Information F3L25R12W1T4_B27 / Technical Information
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IC =f(V CE) IC =f(V GE)<br>Tvj = 150°C VCE =20V<br>60 60<br>Mma VGE = 19V : T as vj = 25°C rf<br>VGE = 17V Tvj = 125°C<br>VGE = 15V Ll a Tvj = 150°C te<br>50 VGE = 13V 50<br>PieeyL | ee<br>VGE = 11V<br>VGE = 9V Pee<br>, | berm E t<br>40 , A 40 a<br>PTT T w |Za TE v<br>e eVA ee),<br>pA/ EL<br>30 30<br>ee ee ee<br>7 k<br>20 20<br>aon /27 [c] [k] c [ee] ee<br>10 10<br>a 2 ee ee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5 6 7 8 9 10 11 12<br>VCE [V] VGE [V]<br>Schaltverluste IGBT, T2 / T3 (typisch) Schaltverluste IGBT, T2 / T3 (typisch)<br>switching losses IGBT, T2 / T3 (typical) switching losses IGBT, T2 / T3 (typical)<br>Eon =f(l),E C off =f(I C) Eon =f(R),E G off =f(R G)<br>VGE =415V,R Gon =10 Ω ,R Goff =10 Ω ,V CE =350V VGE =+15V,1 C =30A,V CE =350V<br>2,5 3,0<br>Eon, Tvj = 125°C Eon, Tvj = 125°C<br>Eoff, Tvj = 125°C Eoff, Tvj = 125°C<br>Eon, Tvj = 150°C Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C 2,5 Eoff, Tvj = 150°C<br>| a | E y<br>2,0 ; WA<br>Yo. a<br>7 a ao 2,0 7 Ae<br>1,5 feof “ aS aearo<br>Yoo oe 1,5 ae<br>aan “<br>1,0<br>ae 1,0 <7<br>0,5 7. a<br>0,5<br>Le<br>0,0 0,0<br>0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80 90 100<br>IC [A] RG [ Ω ]<br> [A] [A]<br>IC IC<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-Module IGBT-modules F3L25R12W1T4_B27
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ZthJH =f(t IC =f(V CE)<br>® VGE en BV.R Goff =10 Ω ,T vj =150°C<br>10 70<br>| ZthJH: IGBT | IC, Modul<br>ooo | IC, Chip<br>ee’ PT TT E Tot TTeee eer 60 EJ]— //{.<br>ae aTell<br>50<br>40<br>1 a EEE<br>ee t<br>Pt Treee 30<br>rTPt TTTTTTTT<br>PTP [LE] teeTPIETT EEE ET 20<br>PATH |E {CUCLTE i: 1 PETE 2 3 PT 4 T 10<br>ri[K/W]: 0,142 0,309 0,719 0,58<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>U e orll l «=|<br>0,1 0<br>0,001 0,01 0,1 1 10 0 100 200 300 400 500 600 700<br>t [s] VCE [V]<br>Durchlasskennlinie der Diode, D1 / D4 (typisch) Schaltverluste Diode, D1 / D4 (typisch)<br>forward characteristic of Diode, D1 / D4 (typical) switching losses Diode, D1 / D4 (typical)<br>IF =f(V F) Erec =f(l F)<br>RGon = i0 Ω ,V CE =350V<br>50 1,4<br>Tvj = 25°C Erec, Tvj = 125°C<br>45 | Tvj = 125°C J a Erec, Tvj = 150°C cae<br>Tvj = 150°C 1,2<br>40<br>9 L i at<br>35 Pe ae 1,0 x<br>30<br>0,8<br>ee<br>25<br>0,6 Cee<br>20 ee aeee ee<br>15 A) LY<br>0,4<br>10<br>0,2<br>5 NeeT eee<br>Sele} EEE<br>0 0,0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0 5 10 15 20 25 30 35 40 45 50<br>VF [V] IF [A]<br> [K/W]thJH [A]IC<br>Z<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-Module IGBT-modules F3L25R12W1T4_B27
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Erec =f(R G) ZthJH =f(t<br>IF = 28 NV CE = 350 V ®<br>1,4 a 10 rrr<br>Erec, Tvj = 125°C | ZthJH: Diode ee ee |<br>Erec, Tvj = 150°C (TT<br>1,2 Ey a Aa ee e eeee oo<br>a ||el<br>1,0<br>0,8 CATE a<br>“ 1 CAT T<br>ee al<br>0,6 LE ~.. Ce<br>SY ael<br>0,4<br>0,2 SOS Lt LE E TI i: PPE 1 2 3 4<br>ri[K/W]: 0,15 0,323 0,739 0,588<br> UCSSRSR Oedi late τ i[s]: 0,0005 0,005 0,05 0,2 d<br>EEE Ln eelet<br>0,0 0,1<br>0 10 20 30 40 50 60 70 80 90 100 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R=f(T)<br>100000<br>= Rtyp ———<br>pe<br>PFaaot ee | ht [ET] eeee eeee ee<br>10000 SERRE<br>Oe<br>ee ee ee<br>poa Na eeee ee<br>pp NN<br>1000 | | N f E<br>a<br>es eS ee ee<br>a<br>poNN<br>Pot | EE<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
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## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules F3L25R12W1T4_B27
## **Schaltplan�/�circuit_diagram_headline**
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## **Vorläufige�Daten Preliminary�Data**
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## **Gehäuseabmessungen�/�package�outlines**
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Infineon<br>**----- End of picture text -----**<br>
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prepared�by:�CM date�of�publication:�2013-11-25 approved�by:�MB revision:�2.0
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IGBT-Module<br>IGBT-modules F3L25R12W1T4_B27<br>**----- End of picture text -----**<br>
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Nutzungsbedingungen<br>**----- End of picture text -----**<br>
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application.<br>**----- End of picture text -----**<br>
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Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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