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F3L225R12W3H3B11BPSA1
IGBT Module, Three level Inverter, 175 A, 2.07 V, 20 mW, 150 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPack Series
- IGBT Technology: IGBT 3 High Speed
- IGBT Termination: Press Fit
- Power Dissipation: 20mW
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Continuous Collector Current: 175A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 2.07V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 92.98 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**F3L225R12W3H3_B11** **EasyPACK[™] module** ## **EasyPACK[™] module with TRENCHSTOP[™] IGBT H3 and emitter controlled 7 diode and PressFIT / NTC** ## **Features** - Electrical features - VCES = 1200 V - IC nom = 225 A / ICRM = 450 A - Low switching losses - High-speed IGBT H3 - Mechanical features - Compact design - PressFIT contact technology - Integrated NTC temperature sensor - High power density ## **Potential applications** - Energy storage systems - Solar applications - Three-level applications ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2023-02-13 **F3L225R12W3H3_B11 EasyPACK[™] module** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, T1 / T4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**3**|**IGBT, T2 / T3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**Diode, D1 / D4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6| |**5**|**Diode, D2 / D3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7| |**6**|**Diode, D5 / D6**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8| |**7**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9| |**8**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10| |**9**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18| |**10**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19| |**11**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21| Datasheet Revision 1.00 2023-02-13 2 **F3L225R12W3H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**| |---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|3.2|kV| |Internal isolation||basic insulation (class 1, IEC 61140)|Al2O3|| |Comparative tracking<br>index|_CTI_||> 400|| |Relative thermal index<br>(electrical)|_RTI_|housing|140|°C| ## **Table 2 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||21||nH| |Module lead resistance,<br>terminals - chip|_R_AA'+CC'|TH= 25 °C, per switch|||2.3||mΩ| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TH= 25 °C, per switch|||1.7||mΩ| |Storage temperature|_T_stg|||-40||125|°C| |Mounting torque for<br>module mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|1.3||1.5|Nm| |Weight|_G_||||78||g| _Note: The current under continuous operation is limited to 25A rms per connector pin._ ## **2 IGBT, T1 / T4** **Table 3 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1200|V| |Implemented collector<br>current|_I_CN|||225|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|175|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||450|A| |Gate-emitter peak voltage|_V_GES|||±20|V| Datasheet Revision 1.00 2023-02-13 3 **F3L225R12W3H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, T1 / T4** ## **Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 4**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 225 A,_V_GE= 15 V|_T_vj= 25 °C||2.07|2.55|V| ||||_T_vj= 125 °C||2.50||| ||||_T_vj= 150 °C||2.60||| |Gate threshold voltage|_V_GEth|_I_C= 7.8 mA, VCE= VGE,_T_vj|= 25 °C|5.25|5.80|6.35|V| |Gate charge|_Q_G|_V_GE= ±15 V|||1.73||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||3.3||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||13.1||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.72||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||1|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 225 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gon= 0.47 Ω|_T_vj= 25 °C||0.107||µs| ||||_T_vj= 125 °C||0.115||| ||||_T_vj= 150 °C||0.118||| |Rise time (inductive load)|_t_r|_I_C= 225 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gon= 0.47 Ω|_T_vj= 25 °C||0.030||µs| ||||_T_vj= 125 °C||0.035||| ||||_T_vj= 150 °C||0.037||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 225 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gof= 0.47 Ω|_T_vj= 25 °C||0.300||µs| ||||_T_vj= 125 °C||0.329||| ||||_T_vj= 150 °C||0.346||| |Fall time (inductive load)|_t_f|_I_C= 225 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gof= 0.47 Ω|_T_vj= 25 °C||0.040||µs| ||||_T_vj= 125 °C||0.129||| ||||_T_vj= 150 °C||0.148||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 225 A,_V_CC= 600 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 0.47 Ω, di/dt =<br>6100 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||11.8||mJ| ||||_T_vj= 125 °C||20.7||| ||||_T_vj= 150 °C||23.4||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 225 A,_V_CC= 600 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 0.47 Ω, dv/dt =<br>4500 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||8.67||mJ| ||||_T_vj= 125 °C||15.9||| ||||_T_vj= 150 °C||17.8||| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 800 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 10 µs,<br>_T_vj=150 °C||900||A| **(table continues...)** Datasheet Revision 1.00 2023-02-13 4 **F3L225R12W3H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **3 IGBT, T2 / T3** |**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT,_λ_grease= 3.3 W/(m·K)||0.218||K/W| |Temperature under<br>switching conditions|_T_vj op||-40||150|°C| ## **3 IGBT, T2 / T3** |**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1200|V| |Implemented collector<br>current|_I_CN|||225|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|180|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||450|A| |Gate-emitter peak voltage|_V_GES|||±20|V| **Table 6 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 225 A,_V_GE= 15 V|_T_vj= 25 °C||2.07|2.55|V| ||||_T_vj= 125 °C||2.50||| ||||_T_vj= 150 °C||2.60||| |Gate threshold voltage|_V_GEth|_I_C= 7.8 mA, VCE= VGE,_T_vj=|25 °C|5.25|5.80|6.35|V| |Gate charge|_Q_G|_V_GE= ±15 V|||1.73||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||3.3||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||13.1||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.72||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||1|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| **(table continues...)** Datasheet Revision 1.00 2023-02-13 5 **F3L225R12W3H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Diode, D1 / D4** |**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 225 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gon= 0.47 Ω|_T_vj= 25 °C||0.107||µs| ||||_T_vj= 125 °C||0.117||| ||||_T_vj= 150 °C||0.122||| |Rise time (inductive load)|_t_r|_I_C= 225 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gon= 0.47 Ω|_T_vj= 25 °C||0.039||µs| ||||_T_vj= 125 °C||0.048||| ||||_T_vj= 150 °C||0.050||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 225 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gof= 0.47 Ω|_T_vj= 25 °C||0.290||µs| ||||_T_vj= 125 °C||0.340||| ||||_T_vj= 150 °C||0.360||| |Fall time (inductive load)|_t_f|_I_C= 225 A,_V_CC= 600 V,<br>_V_GE= ±15 V,_R_Gof= 0.47 Ω|_T_vj= 25 °C||0.041||µs| ||||_T_vj= 125 °C||0.114||| ||||_T_vj= 150 °C||0.139||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 225 A,_V_CC= 600 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 0.47 Ω, di/dt =<br>4600 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||8.1||mJ| ||||_T_vj= 125 °C||14.3||| ||||_T_vj= 150 °C||16.4||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 225 A,_V_CC= 600 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 0.47 Ω, dv/dt =<br>4200 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||9.25||mJ| ||||_T_vj= 125 °C||17.5||| ||||_T_vj= 150 °C||19.6||| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 800 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 10 µs,<br>_T_vj=150 °C||900||A| |Thermal resistance,<br>junction to heat sink|_R_thJH|per IGBT,_λ_grease= 3.3 W/(m·K)|||0.212||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **4 Diode, D1 / D4** |**4**<br>**Diode, D1 / D4**|**4**<br>**Diode, D1 / D4**|**4**<br>**Diode, D1 / D4**|**4**<br>**Diode, D1 / D4**|**4**<br>**Diode, D1 / D4**|**4**<br>**Diode, D1 / D4**| |---|---|---|---|---|---| |**Table 7**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |Continuous DC forward<br>current|_I_F|||300|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||600|A| **(table continues...)** Datasheet Revision 1.00 2023-02-13 6 **F3L225R12W3H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Diode, D2 / D3** |**Table 7**<br>**(continued) Maximum rated values**|**Table 7**<br>**(continued) Maximum rated values**|**Table 7**<br>**(continued) Maximum rated values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|10900|||A²s| ||||_T_vj= 150 °C|6280|||| ||||||||| |**Table 8**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 300 A,_V_GE= 0 V|_T_vj= 25 °C||1.72|2.10|V| ||||_T_vj= 125 °C||1.59||| ||||_T_vj= 150 °C||1.56||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 600 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>4800 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||229||A| ||||_T_vj= 125 °C||263||| ||||_T_vj= 150 °C||272||| |Recovered charge|_Q_r|_V_CC= 600 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>4800 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||20.5||µC| ||||_T_vj= 125 °C||38.4||| ||||_T_vj= 150 °C||44.5||| |Reverse recovery energy|_E_rec|_V_CC= 600 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>4800 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||7.88||mJ| ||||_T_vj= 125 °C||14.2||| ||||_T_vj= 150 °C||16.2||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,_λ_grease= 3.3 W/(m·K)|||0.354||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **5 Diode, D2 / D3** |**5**<br>**Diode, D2 / D3**|**5**<br>**Diode, D2 / D3**|**5**<br>**Diode, D2 / D3**|||| |---|---|---|---|---|---| |**Table 9**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |Continuous DC forward<br>current|_I_F|||200|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||400|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|3320|A²s| ||||_T_vj= 150 °C|2110|| Datasheet Revision 1.00 2023-02-13 7 **F3L225R12W3H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Diode, D5 / D6** |**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 200 A,_V_GE= 0 V|_T_vj= 25 °C||1.72|2.10|V| ||||_T_vj= 125 °C||1.59||| ||||_T_vj= 150 °C||1.56||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 600 V,_I_F= 200 A,<br>_V_GE= -15 V, -diF/dt =<br>4300 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||195||A| ||||_T_vj= 125 °C||238||| ||||_T_vj= 150 °C||248||| |Recovered charge|_Q_r|_V_CC= 600 V,_I_F= 200 A,<br>_V_GE= -15 V, -diF/dt =<br>4300 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||14.1||µC| ||||_T_vj= 125 °C||27.4||| ||||_T_vj= 150 °C||31.3||| |Reverse recovery energy|_E_rec|_V_CC= 600 V,_I_F= 200 A,<br>_V_GE= -15 V, -diF/dt =<br>4300 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||5.72||mJ| ||||_T_vj= 125 °C||11.1||| ||||_T_vj= 150 °C||12.5||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,_λ_grease= 3.3 W/(m·K)|||0.415||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **6 Diode, D5 / D6** |**6**<br>**Diode, D5 / D6**|**6**<br>**Diode, D5 / D6**|**6**<br>**Diode, D5 / D6**|||| |---|---|---|---|---|---| |**Table 11**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |Continuous DC forward<br>current|_I_F|||300|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||600|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|10900|A²s| ||||_T_vj= 150 °C|6280|| Datasheet Revision 1.00 2023-02-13 8 **F3L225R12W3H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 NTC-Thermistor** |**Table 12**<br>**Characteristic values**|**Table 12**<br>**Characteristic values**|**Table 12**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 300 A,_V_GE= 0 V|_T_vj= 25 °C||1.72|2.10|V| ||||_T_vj= 125 °C||1.59||| ||||_T_vj= 150 °C||1.56||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 600 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>6200 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||244||A| ||||_T_vj= 125 °C||263||| ||||_T_vj= 150 °C||272||| |Recovered charge|_Q_r|_V_CC= 600 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>6200 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||20.4||µC| ||||_T_vj= 125 °C||38.4||| ||||_T_vj= 150 °C||44.5||| |Reverse recovery energy|_E_rec|_V_CC= 600 V,_I_F= 300 A,<br>_V_GE= -15 V, -diF/dt =<br>6200 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||6.87||mJ| ||||_T_vj= 125 °C||13||| ||||_T_vj= 150 °C||14.8||| |Thermal resistance,<br>junction to heat sink|_R_thJH|per diode,_λ_grease= 3.3 W/(m·K)|||0.399||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **7 NTC-Thermistor** |**7**<br>**NTC-Thermistor**|**7**<br>**NTC-Thermistor**|**7**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 13**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|_ΔR/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _Note: Specification according to the valid application note._ Datasheet Revision 1.00 2023-02-13 9 **F3L225R12W3H3_B11 EasyPACK[™] module** **8 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **Output characteristic (typical), IGBT, T1 / T4** IC = f(VCE) VGE = 15 V **Output characteristic field (typical), IGBT, T1 / T4** IC = f(VCE) T = 150 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 450 450<br>405 405<br>360 360<br>315 315<br>270 270<br>225 225<br>180 180<br>135 135<br>90 90<br>45 45<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Transfer characteristic (typical), IGBT, T1 / T4 Switching losses (typical), IGBT, T1 / T4<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 0.47 Ω, RGon = 0.47 Ω, VGE = ±15 V, VCC = 600 V<br>450 80<br>405<br>70<br>360<br>60<br>315<br>50<br>270<br>225 40<br>180<br>30<br>135<br>20<br>90<br>10<br>45<br>0 0<br>5 6 7 8 9 10 11 12 13 0 45 90 135 180 225 270 315 360 405 450<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-02-13 10 **F3L225R12W3H3_B11 EasyPACK[™] module** **8 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Switching losses (typical), IGBT, T1 / T4** ## E = f(RG) VGE = ±15 V, IC = 225 A, VCC = 600 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, T1 / T4** ## t = f(RG) ## **Switching times (typical), IGBT, T1 / T4** ## t = f(IC) RGoff = 0.47 Ω, RGon = 0.47 Ω, VGE = ±15 V, VCC = 600 V, Tvj = 150 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0 45 90 135 180 225 270 315 360 405 450<br>**----- End of picture text -----**<br> **Transient thermal impedance , IGBT, T1 / T4** Zth = f(t) VGE = ±15 V, IC = 225 A, VCC = 600 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-02-13 11 **F3L225R12W3H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **Reverse bias safe operating area (RBSOA), IGBT, T1 / T4** IC = f(VCE) **Output characteristic (typical), IGBT, T2 / T3** IC = f(VCE) VGE = 15 V RGoff = 0.47 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 550<br>500<br>450<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br> **Output characteristic field (typical), IGBT, T2 / T3** IC = f(VCE) T = 150 °C vj **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 450<br>405<br>360<br>315<br>270<br>225<br>180<br>135<br>90<br>45<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>**----- End of picture text -----**<br> **Transfer characteristic (typical), IGBT, T2 / T3** IC = f(VGE) VCE = 20 V **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 450 450<br>405 405<br>360 360<br>315 315<br>270 270<br>225 225<br>180 180<br>135 135<br>90 90<br>45 45<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 6 7 8 9 10 11 12 13<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-02-13 12 **F3L225R12W3H3_B11 EasyPACK[™] module** **8 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Switching losses (typical), IGBT, T2 / T3** ## E = f(IC) RGoff = 0.47 Ω, RGon = 0.47 Ω, VGE = ±15 V, VCC = 600 V ## **Switching losses (typical), IGBT, T2 / T3** E = f(RG) IC = 225 A, VCC = 600 V, VGE = -15 / 15 V **==> picture [540 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 60 40<br>55<br>35<br>50<br>45 30<br>40<br>25<br>35<br>30 20<br>25<br>15<br>20<br>15 10<br>10<br>5<br>5<br>0 0<br>0 45 90 135 180 225 270 315 360 405 450 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Switching times (typical), IGBT, T2 / T3 Switching times (typical), IGBT, T2 / T3<br>t = f(IC) t = f(RG)<br>RGoff = 0.47 Ω, RGon = 0.47 Ω, VGE = ±15 V, VCC = 600 V, Tvj = VGE = ±15 V, IC = 225 A, VCC = 600 V, Tvj = 150 °C<br>150 °C<br>1 1<br>0.1<br>0.1<br>0.01<br>0.001 0.01<br>0 45 90 135 180 225 270 315 360 405 450 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-02-13 13 **F3L225R12W3H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **Transient thermal impedance , IGBT, T2 / T3 Reverse bias safe operating area (RBSOA), IGBT, T2 /** Zth = f(t) **T3** IC = f(VCE) RGoff = 0.47 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **Forward characteristic (typical), Diode, D1 / D4** IF = f(VF) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>550<br>500<br>450<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br> **Switching losses (typical), Diode, D1 / D4** Erec = f(IF) RG = 0.47 Ω, VCC = 600 V **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 600 20<br>550<br>500<br>450 15<br>400<br>350<br>300 10<br>250<br>200<br>150 5<br>100<br>50<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 0 60 120 180 240 300 360 420 480 540 600<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-02-13 14 **F3L225R12W3H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **Switching losses (typical), Diode, D1 / D4** Erec = f(RG) IF = 300 A, VCC = 600 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>15<br>10<br>5<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>**----- End of picture text -----**<br> **Forward characteristic (typical), Diode, D2 / D3** IF = f(VF) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0.00 0.50 1.00 1.50 2.00 2.50<br>**----- End of picture text -----**<br> **Transient thermal impedance, Diode, D1 / D4** Zth = f(t) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **Switching losses (typical), Diode, D2 / D3** Erec = f(IF) RGon = 0.47 Ω, VCC = 600 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>15<br>10<br>5<br>0<br>0 40 80 120 160 200 240 280 320 360 400<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-02-13 15 **F3L225R12W3H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **Switching losses (typical), Diode, D2 / D3** Erec = f(RG) IF = 200 A, VCC = 600 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>15<br>10<br>5<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>**----- End of picture text -----**<br> **Forward characteristic (typical), Diode, D5 / D6** IF = f(VF) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>550<br>500<br>450<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5<br>**----- End of picture text -----**<br> **Transient thermal impedance, Diode, D2 / D3** Zth = f(t) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **Switching losses (typical), Diode, D5 / D6** Erec = f(IF) RG = 0.47 Ω, VCC = 600 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>15<br>10<br>5<br>0<br>0 60 120 180 240 300 360 420 480 540 600<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-02-13 16 **F3L225R12W3H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **Switching losses (typical), Diode, D5 / D6 Transient thermal impedance, Diode, D5 / D6** Erec = f(RG) Zth = f(t) IF = 300 A, VCC = 600 V **==> picture [540 x 557] intentionally omitted <==** **----- Start of picture text -----**<br> 20 1<br>15<br>10 0.1<br>5<br>0 0.01<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.001 0.01 0.1 1 10<br>Temperature characteristic (typical), NTC-Thermistor<br>R = f(TNTC)<br>100000<br>10000<br>1000<br>100<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-02-13 17 **F3L225R12W3H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Circuit diagram** |**9**<br>**Circuit diagram**|**9**<br>**Circuit diagram**|| |---|---|---| |D5<br>N1<br>N2<br>D6|G1<br>E1|DC+<br>D1<br>T1<br>X3<br>T2<br>D2<br>T3<br>P1<br>P2<br>D3<br>X4<br>T4<br>D4<br>DC-<br>X1<br>X2<br>�| ||G2<br>E2<br>G3<br>E3|| ||G4<br>E4|| **Figure 1** Datasheet Revision 1.00 2023-02-13 18 **F3L225R12W3H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Package outlines** ## **10** ## **Package outlines** **==> picture [516 x 274] intentionally omitted <==** **----- Start of picture text -----**<br> dimensioned for EJOT Delta PT WN5451 25<br>choose length according to pcb thickness<br>max. screw-in depth 8,5mm pcb hole pattern<br>4x 4x � 3,5<br>( � 4,2) 2x dimensioned for M5 screw<br>26 E2 P1 P1 P1 P1 P2 P2 P2 P2<br>24<br>14 14,420,817,6 G2 P1P1P1 P2P2P2<br>E3 G3 X4 X1 X2<br>4,8<br>0 0 E1<br>4,8<br>X3 G1<br>11,2<br>14 14,420,817,6 DC+ DC+ DC+ DC+ N1N1N1N1 N2N2N2N2 DC- DC- DC-G4 DC- DC-<br>24<br>26 DC+ DC+ DC+ DC+ DC+ N1 N2 DC- DC- E4 DC-<br>(99,3 � 0,1) Distance of threaded holes in heat sink<br>109,9 � 0,45<br>- Details about hole specification for contacts refer to AN2009-01 chapter 2<br>- Diameters of drill � 1,15mm<br>- Copper thickness in hole 25~50um<br>recommended pcb design height<br>12<br>�<br>2x according to screw head washer<br>0,45<br> �<br>62<br>3,4)<br>� (<br>47,43 0 47,43 44,43 36,08 32,88 29,68 26,48 23,28 20,08 16,88 13,68 10,48 7,28 4,08 0 4,08 7,28 10,48 13,68 16,88 20,08 23,28 26,48 29,68 32,88 36,08 44,43<br>0,1<br> � (12) W00213783.05<br>12,2 (16,4)<br>**----- End of picture text -----**<br> ## **Figure 2** ## **11 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)<br><br> <br> <br> <br> <br>|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| **Figure 3** Datasheet Revision 1.00 2023-02-13 19 **F3L225R12W3H3_B11 EasyPACK[™] module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document version**|**Date of release**|**Description of changes**| |0.10|2022-09-16|Initial version| |1.00|2023-02-13|Final datasheet| Datasheet Revision 1.00 2023-02-13 20 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2023-02-13 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2023 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABB158-002** Infineon Technologies in customer’s applications. ## **Warnings** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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