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F3L200R12W2H3B11BPSA1
IGBT Module, Three level Inverter, 100 A, 1.55 V, 600 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:600W; Collector Em; Available until stocks are exhausted
- SVHC: No SVHC (08-Jul-2021)
- Product Range: EasyPACK 2B
- IGBT Technology: IGBT 3 High Speed
- IGBT Termination: Press Fit
- Power Dissipation: 600W
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 100A
- Power Dissipation Pd: 600W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 100A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.55V
- Collector Emitter Saturation Voltage Vce(on): 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 47.84 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## IGBT-Modul IGBT-Module F3L200R12W2H3_B11
VCES = 1200V IC nom = 100A / ICRM = 200A
- 3-Level-Applikationen
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**Digit**
1
## Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module F3L200R12W2H3_B11
**==> picture [86 x 38] intentionally omitted <==**
## **IGBT,�T1�/�T4�/�IGBT,�T1�/�T4**
**Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>F3L200R12W2H3_B11<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:CM<br>approvedby:AKDA<br>dateofpublication:2016-04-04<br>revision:V3.1<br>**IGBT,T1/T4/IGBT,T1/T4**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>ImplementierterKollektor-Strom<br>Implementedcollectorcurrent<br>ICN<br>200<br>A<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>100<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>400<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>600<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,75<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 7,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,05<br>5,80<br>6,45<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,60<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>3,8<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>11,5<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,70<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,14<br>0,155<br>0,16<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,025<br>0,03<br>0,03<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,32<br>0,40<br>0,42<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,03<br>0,055<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, di/dt = 3700 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>1,20<br>2,00<br>2,25<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, du/dt = 2700 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>3,50<br>5,30<br>5,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>800<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,200 0,250 K/W||
|preparedby:CM|dateofpublication:2016-04-04|
|---|---|
|approvedby:AKDA|revision:V3.1|
2
## Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module F3L200R12W2H3_B11
**==> picture [86 x 38] intentionally omitted <==**
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,200||K/W|
|---|---|---|---|---|---|---|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **Diode,�D2�/�D3�/�Diode,�D2�/�D3**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|ImplementierterDurchlassstrom<br>Implementedforwardcurrent||IFN|125|||A|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|100|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|250|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1450<br>1400|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,70|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 3700 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||90,0<br>100<br>100||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 100 A, - diF/dt = 3700 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||3,25<br>5,90<br>6,40||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 3700 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,95<br>1,55<br>1,65||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||0,550|0,650|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,600||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
prepared�by:�CM approved�by:�AKDA
date�of�publication:�2016-04-04 revision:�V3.1
3
## Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module F3L200R12W2H3_B11
**==> picture [86 x 38] intentionally omitted <==**
**IGBT,�T2�/�T3�/�IGBT,�T2�/�T3 Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>F3L200R12W2H3_B11<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:CM<br>approvedby:AKDA<br>dateofpublication:2016-04-04<br>revision:V3.1<br>**IGBT,T2/T3/IGBT,T2/T3**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>100<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>250<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,95<br>5,80<br>6,45<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,00<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,20<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,19<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>td on<br>0,055<br>0,06<br>0,065<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>tr<br>0,025<br>0,03<br>0,03<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 3,3Ω<br>td off<br>0,25<br>0,27<br>0,28<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 100 A, VCE= 400 V<br>VGE= ±15 V<br>RGoff= 3,3Ω<br>tf<br>0,035<br>0,05<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, di/dt = 3800 A/µs (Tvj= 150°C)<br>RGon= 3,3Ω<br>Eon<br>1,85<br>2,80<br>3,30<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 400 V, LS= 25 nH<br>VGE= ±15 V, du/dt = 4600 V/µs (Tvj= 150°C)<br>RGoff= 3,3Ω<br>Eoff<br>3,10<br>4,10<br>4,60<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>700<br>500<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,500 0,600 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,500<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
4
## Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module F3L200R12W2H3_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Diode,�D1�/�D4�/�Diode,�D1�/�D4**
**Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>F3L200R12W2H3_B11<br>IGBT-Modul<br>IGBT-Module||
|---|---|
|preparedby:CM<br>approvedby:AKDA<br>dateofpublication:2016-04-04<br>revision:V3.1<br>**Diode,D1/D4/Diode,D1/D4**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage<br>Tvj= 25°C<br>VRRM<br>1200<br>V<br>Dauergleichstrom<br>ContinuousDCforwardcurrent<br>IF<br>75<br>A<br>PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent<br>tP= 1 ms<br>IFRM<br>150<br>A<br>Grenzlastintegral<br>I²t-value<br>VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C<br>I²t<br>1050<br>985<br>A²s<br>A²s<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Durchlassspannung<br>Forwardvoltage<br>IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>VF<br>1,65<br>1,65<br>1,65<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Rückstromspitze<br>Peakreverserecoverycurrent<br>IF= 75 A, - diF/dt = 3500 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>IRM<br>120<br>140<br>150<br>A<br>A<br>A<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Sperrverzögerungsladung<br>Recoveredcharge<br>IF= 75 A, - diF/dt = 3500 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Qr<br>8,50<br>17,0<br>19,0<br>µC<br>µC<br>µC<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltenergieproPuls<br>Reverserecoveryenergy<br>IF= 75 A, - diF/dt = 3500 A/µs (Tvj=150°C)<br>VR= 400 V<br>VGE= -15 V<br>Erec<br>2,85<br>5,70<br>6,30<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proDiode/perdiode<br>RthJC<br>0,550 0,600 K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,500<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C<br>**Modul/Module**<br>Isolations-Prüfspannung<br>Isolationtestvoltage<br>RMS, f = 50 Hz, t = 1 min.<br>VISOL<br>3,0<br>kV<br>InnereIsolation<br>Internalisolation<br>Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)<br>Al2O3<br>Kriechstrecke<br>Creepagedistance<br>Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal<br>11,5<br>6,3<br>mm<br>Luftstrecke<br>Clearance<br>Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal<br>10,0<br>5,0<br>mm<br>VergleichszahlderKriechwegbildung<br>Comperativetrackingindex<br>CTI<br>> 200<br>min.<br>typ.<br>max.<br>Modulstreuinduktivität<br>Strayinductancemodule<br>LsCE<br>14<br>nH<br>Lagertemperatur<br>Storagetemperature<br>Tstg<br>-40<br>125<br>°C<br>Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp<br>F<br>40<br>-<br>80<br>N<br>Gewicht<br>Weight<br>G<br>36<br>g<br>Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt.<br>The current under continuous operation is limited to 25A rms per connector pin.||
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 25A rms per connector pin.
|preparedby:CM|dateofpublication:2016-04-04|
|---|---|
|approvedby:AKDA|revision:V3.1|
5
## Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module F3L200R12W2H3_B11
**==> picture [86 x 38] intentionally omitted <==**
|**NTC-Widerstand/NTC-Thermistor**<br>**CharakteristischeWerte/CharacteristicValues**|**NTC-Widerstand/NTC-Thermistor**<br>**CharakteristischeWerte/CharacteristicValues**||min.|typ.|max.||
|---|---|---|---|---|---|---|
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�CM date�of�publication:�2016-04-04 approved�by:�AKDA revision:�V3.1
6
## Technische�Information�/�Technical�Information
## IGBT-Modul IGBT-Module F3L200R12W2H3_B11
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**Ausgangskennlinie�IGBT,�T1�/�T4�(typisch) output�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VCE) VGE�=�15�V
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200<br>180 TTTvjvvjj = 25°C = 12 = 150°C5°C<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
**Ausgangskennlinienfeld�IGBT,�T1�/�T4�(typisch) output�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VCE) Tvj�=�150°C
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200<br>VGE = 19V<br>180 VVGEGE = 17V = 15V<br>VGE = 13V<br>160 VVGEGE = 11V = 9V<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
**Übertragungscharakteristik�IGBT,�T1�/�T4�(typisch) transfer�characteristic�IGBT,�T1�/�T4�(typical)** IC�=�f�(VGE) VCE�=�20�V
**Schaltverluste�IGBT,�T1�/�T4�(typisch) switching�losses�IGBT,�T1�/�T4�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�1.1� Ω ,�RGoff�=�1.1� Ω ,�VCE�=�400�V
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200 11<br>180 TTTvjvvjj = 25°C = 12 = 150°C5°C 10 E E Eon off on, T , T , Tvj vj vj = 125°C = 125 = 150°C° C<br>Eoff, Tvj = 150°C<br>9<br>160<br>8<br>140<br>7<br>120<br>6<br>100<br>5<br>80<br>4<br>60<br>3<br>40<br>2<br>20 1<br>0 0<br>5 6 7 8 9 10 11 12 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br>prepared�by:�CM date�of�publication:�2016-04-04<br>approved�by:�AKDA revision:�V3.1<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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## IGBT-Modul IGBT-Module F3L200R12W2H3_B11
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Eon =f(R),E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,1 C =100A,V CE =400V<br>8 1<br>Eon, Tvj = 125°C | ZthJH : IGBT aere nt<br>7 EEoff on , T, Tvj vj = 125°C = 150°C [aaeee [a]<br>Eoff, Tvj = 150°C<br>ATU | | Th<br>6 | ooI ea<br>0,1<br>5 Z wi<br>See<br>4<br>ee aititea titi [attieam] ati<br>3<br>0,01<br>2<br>i: 1 2 3 4<br>1 ri[K/W]: 0,012 0,044 0,032 0,312<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT, T1 / T4 (RBSOA) Durchlasskennlinie der Diode, D2 / D3 (typisch)<br>reverse bias safe operating area IGBT, T1 / T4 (RBSOA) forward characteristic of Diode, D2 / D3 (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE =415V,R Goff =1.1 Ω ,T vj =150°C<br>250 200<br>IICC, Modul, Chip 180 TTTvjvvjj = 25°C = 12 = 150°C5°C<br>200 160<br>140<br>150 120<br>100<br>100 80<br>60<br>/<br>50 40<br>fp<br>//<br>20<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
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## IGBT-Modul IGBT-Module F3L200R12W2H3_B11
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Erec =f (I F) Erec =f(R G)<br>RGon =1.1 Ω ,V CE =400V IF =100A,V CE =400V<br>2,6 2,0<br>2,4 E E recrec, T , T vjvj = 125°C = 150°C 1,8 EErecrec, T, Tvjvj = 125°C = 150°C<br>2,2<br>1,6<br>2,0<br>1,8 1,4<br>1,6<br>1,2<br>\ \<br>1,4<br>1,0<br>1,2<br>0,8<br>1,0<br>0,8 0,6<br>0,6<br>“PEEP Err 0,4 —<br>0,4<br>0,2<br>0,2<br>0,0 0,0<br>0 20 40 60 80 100 120 140 160 180 200 0 1 2 3 4 5 6 7 8 9 10<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, D2 / D3 Ausgangskennlinie IGBT, T2 / T3 (typisch)<br>transient thermal impedance Diode, D2 / D3 output characteristic IGBT, T2 / T3 (typical)<br>ZthJH =f (t) IC =f(V CE)<br>VGE =15V<br>10 200<br>EEE ZthJH : Diode 180 TTTvjvvjj = 25°C = 12 = 150°C5°C<br>Sate! EF LL<br>160<br>140<br>1 a a<br>CH<br>a 120<br>Po A<br>100<br>/<br>80<br>0,1 Lf i!<br>LE AT | IN LT 60 |<br>Fe Ee #<br>ee {f’<br>40<br>i: 1 2 3 4<br>PO i ri[K/W]: 0,035 0,149 0,311 0,655 ff<br>τ i[s]: 0,0005 0,005 0,05 0,2 20<br>0,01 i 0 > an<br>0,001 0,01 0,1 1 10 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>t [s] VCE [V]<br>E [mJ] E [mJ]<br> [K/W]thJH [A]IC<br>Z<br>**----- End of picture text -----**<br>
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## Technische�Information�/�Technical�Information
## IGBT-Modul IGBT-Module F3L200R12W2H3_B11
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**Ausgangskennlinienfeld�IGBT,�T2�/�T3�(typisch) output�characteristic�IGBT,�T2�/�T3�(typical)** IC�=�f�(VCE) Tvj�=�150°C
**Übertragungscharakteristik�IGBT,�T2�/�T3�(typisch) transfer�characteristic�IGBT,�T2�/�T3�(typical)** IC�=�f�(VGE) VCE�=�20�V
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200 200<br>180 VVVGEGEGE = 19V = 17V = 15V 180 TTTvjvvjj = 25°C = 12 = 150°C5°C<br>VGE = 13V<br>160 VVGEGE = 11V = 9V 160<br>140 140<br>120 120<br>100 100<br>80 80<br>60 60<br>40 40<br>20 20<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5 6 7 8 9 10 11 12<br>VCE [V] VGE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
**Schaltverluste�IGBT,�T2�/�T3�(typisch) switching�losses�IGBT,�T2�/�T3�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�3.3� Ω ,�RGoff�=�3.3� Ω ,�VCE�=�400�V
**Schaltverluste�IGBT,�T2�/�T3�(typisch) switching�losses�IGBT,�T2�/�T3�(typical)** Eon�=�f�(RG),�Eoff�=�f�(RG) VGE�=�±15�V,�IC�=�100�A,�VCE�=�400�V
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10 24<br>9 EEEonoffon, T,, T Tvjvvjj = 125°C = 12 = 150°C5°C 22 E E Eon off on, T , T , Tvj vj vj = 125°C = 125°C = 150°C<br>Eoff, Tvj = 150°C 20 Eoff, Tvj = 150°C<br>8<br>18<br>7<br>16<br>6<br>14<br>5 12<br>10<br>4<br>8<br>3<br>6<br>2<br>4<br>1<br>2<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 3 6 9 12 15 18 21 24 27 30<br>IC [A] RG [ Ω ]<br>prepared�by:�CM date�of�publication:�2016-04-04<br>approved�by:�AKDA revision:�V3.1<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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## IGBT-Modul IGBT-Module F3L200R12W2H3_B11
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ZthJH =f (t) IC =f(V CE)<br>VGE =415V,R Goff =3.3 Ω ,T vj =150°C<br>10 {jtty 220<br>Sa| ZthJH : IGBT a 200 ELL I I C C , Modul , Chip<br>et eeeett ett emt 180<br>160<br>1<br>140<br>120<br>SSH 100 pe<br>80<br>0,1<br>60<br>40<br>i: 1 2 3 4<br>ri[K/W]: 0,03 0,11 0,08 0,78<br>τ i[s]: 0,0005 0,005 0,05 0,2 20<br>0,01 0<br>0,001 0,01 0,1 1 10 0 100 200 300 400 500 600 700 800<br>t [s] VCE [V]<br>Durchlasskennlinie der Diode, D1 / D4 (typisch) Schaltverluste Diode, D1 / D4 (typisch)<br>forward characteristic of Diode, D1 / D4 (typical) switching losses Diode, D1 / D4 (typical)<br>IF =f(V F) Erec =fil F)<br>RGon =3.3 Ω ,V CE =400V<br>150 10<br>135 | TTTvjvvjj = 25°C = 12 = 150°C5°C BRRi]i e 9 eee EErecrec, T, Tvjvj = 125°C = 150 [eee] °C<br>120 8<br>105 7<br>90 6<br>75 5<br>60 4 A<br>45 3<br>30 2<br>15 1<br>yZ<br>LA<br>PLAT EEE<br>0 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 0 15 30 45 60 75 90 105 120 135 150<br>VF [V] IF [A]<br> [K/W]thJH [A]IC<br>Z<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-Modul IGBT-Module
## F3L200R12W2H3_B11
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Erec =f(R G) ZthJH =f (t)<br>IF =75A,V CE =400V<br>8 10<br>Erec, Tvj = 125°C ZthJH : Diode<br>Erec, Tvj = 150°C<br>7<br>eth eet ements<br>6 aaneT (ee| aRRR<br>1 aE<br>.<br>5<br>SS SSae<br>4 JO<br>a ee<br>3<br>oS wees 0,1 oi Att ot<br>2 ——<br>A<br>i: 1 2 3 4<br>1 ri[K/W]: 0,042 0,093 0,387 0,528<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0 0,01<br>0 3 6 9 12 15 18 21 24 27 30 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R=f(T)<br>100000<br>Rtyp<br>————<br>10000<br>Ki EE |<br>ee<br>NO<br>1000 EeaaNeeeea es<br>(a<br>PN<br>100<br>0 20 40 60 80 100 120 140 160<br>TNTC [°C]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
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## Technische�Information�/�Technical�Information
IGBT-Modul IGBT-Module F3L200R12W2H3_B11
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Schaltplan�/�Circuit�diagram<br>**----- End of picture text -----**<br>
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�<br>Gehäuseabmessungen�/�Package�outlines<br>Infineon<br>**----- End of picture text -----**<br>
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prepared�by:�CM date�of�publication:�2016-04-04<br>approved�by:�AKDA revision:�V3.1<br>**----- End of picture text -----**<br>
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## IGBT-Modul IGBT-Module
## F3L200R12W2H3_B11
## **Nutzungsbedingungen**
## **WARNHINWEIS**
## **WARNINGS**
14
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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