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F3L200R07PE4BOSA1
IGBT Module, Three level Inverter, 200 A, 1.55 V, 680 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:680W; Collector Emitter Voltage V(br)ceo:650V; Transistor
- SVHC: No SVHC (27-Jun-2018)
- Product Range: EconoPACK 4
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 680W
- IGBT Configuration: Three level Inverter
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 200A
- Power Dissipation Pd: 680W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 200A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.55V
- Collector Emitter Saturation Voltage Vce(on): 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 111.26 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules
## F3L200R07PE4
J | ~~I~~ i 4) VCES = 650V IC nom = 200A / ICRM = 400A
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1
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules F3L200R07PE4
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>F3L200R07PE4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:MK<br>dateofpublication:2013-11-05<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 175°C<br>IC nom<br>200<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>400<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>680<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,95<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 3,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>2,00<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>12,5<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,38<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 3,6Ω<br>td on<br>0,11<br>0,12<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 3,6Ω<br>tr<br>0,05<br>0,06<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 3,6Ω<br>td off<br>0,49<br>0,52<br>0,53<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 3,6Ω<br>tf<br>0,05<br>0,07<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 200 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 3000 A/µs (Tvj= 150°C)<br>RGon= 3,6Ω<br>Eon<br>1,50<br>2,00<br>2,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 200 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3000 V/µs (Tvj= 150°C)<br>RGoff= 3,6Ω<br>Eoff<br>9,50<br>12,5<br>14,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>960<br>760<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤10 µs,<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,22<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,063<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
> IGBT-ModuleIGBT-modules F3L200R07PE4
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|650||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|200|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|2650<br>2450|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 200 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||140<br>170<br>180||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 200 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||8,00<br>16,0<br>17,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 200 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||2,50<br>4,00<br>4,50||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,42|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,125||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
prepared�by:�AS approved�by:�MK
date�of�publication:�2013-11-05 revision:�2.0
3
> IGBT-ModuleIGBT-modules F3L200R07PE4
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
**Vorläufige�Daten Preliminary�Data**
## **Diode,�3-Level�/�Diode,�3-Level Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|200|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|2650<br>2450<br>|A²s<br>A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 200 A, - diF/dt = 3500 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||140<br>170<br>180||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 200 A, - diF/dt = 3500 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||8,00<br>16,0<br>17,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 200 A, - diF/dt = 3500 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||2,50<br>4,00<br>4,50||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,42|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,125||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�AS date�of�publication:�2013-11-05 approved�by:�MK revision:�2.0
4
IGBT-Module IGBT-modules
## F3L200R07PE4
|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||4,0<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||25,0<br>12,5||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||11,0<br>7,0||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|Modulstreuinduktivität<br>Lagertemperatur<br>~~Stray inductance module~~<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>~~ee~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|LsCE<br>Tstg<br>M<br> ~~ee ee~~|45<br>-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||nH<br>°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschlusse<br>Terminal connection torque||Schraube M6<br>- Montage gem. gultiger Applikationsschrift<br>Screw M6<br>- Mounting according to valid application note|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||400||g|
5
## IGBT-Module IGBT-modules Technische Information F3L200R07PE4 / Technical Information
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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>400 SS | , 400 es | 7<br>Tvj = 25°C VGE = 19V<br>360 F Tvj = 125°C e 360 | VGE = 17V LiL Tt<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>320 PaTT [| ee| 320 | VGE = 11V Ye<br>/ VGE = 9V 1 i<br>PL E<br>280 280<br>pe PP Jd ee |<br>PLETE Aevs e es e[! ; a e<br>240 240<br>SRRRRREP eA eee) Cee<br>200 200<br>160 160<br>f /<br>/<br>120 PLEA, 120 Ey e<br>80 80<br>GRRE AER ee Ae<br>40 40<br>TPT<br>0 0<br>a ETT T y EAE<br>0,0 0,4 0,8 1,2 1,6 2,0 2,4 2,8 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =36 Ω ,R Goff =36 Ω ,V CE =300V<br>400 Ld 36 SS<br>Tvj = 25°C Eon, Tvj = 125°C<br>360 f TTvjvj = 125°C = 150°C F / ‘ys 32 EEoffon, T, Tvjvj TS = 125°C = 150°C |LELL ETA7<br>Eoff, Tvj = 150°C<br>320<br>28<br>280<br>24<br>240<br>20<br>200<br>16<br>160<br>12<br>120<br>pf | Py | | oo<br>ee Ane 8 zeVan<br>8040 i 4 Ac<br>> 4Ae ee e eeee ee<br>0 0<br>5 6 7 8 9 10 11 12 0 40 80 120 160 200 240 280 320 360 400<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
6
## IGBT-Module IGBT-modules
## F3L200R07PE4
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Eon =f{(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =200A,V CE =300V<br>30 1<br>Eon, Tvj = 125°C | ZthJC : IGBT ee<br>27 —_— Eoff, Tvj = 125°C J P| | | | |W SeHH— EE HH} tHee<br>Eon, Tvj = 150°C VA VA ooo TTT<br>Eoff, Tvj = 150°C e l l<br>2421 TT) LIAy, PTOLB TT TTTT<br>0,1<br>Tor:J _ —|— EINPret2C e rteeELIEet ELT<br>18 ZL. La onZe<br>15 Pf) eee| eTone— ree |YT20fT T ity ETTTT |TT|<br>12 eee ae PT AI TTI TTI ET<br>a4 ACTIN ELIMITE<br>0,01<br>9 Sn, Geeeeeeeeee<br>JYA P A eetet<br>6 P} ox]J ttt dy fd eePT TT a eeTTte |<br>i: 1 2 3 4<br>3 ALL r τ ii[K/W]: [s]: 0,0132 0,01 0,0726 0,02 0,0704 0,05 0,0638 0,1<br>0 0,001<br>0 3 6 9 12 15 18 21 24 27 30 33 36 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =3.6 Ω ,T vj =150°C<br>500 400<br>IC, Chip Tvj = 25°C<br>IC, Module short path 360 Tvj = 125°C<br>ea IC, Module long path Oe Tvj = 150°C<br>400 320<br>est Po p fg<br>280<br>ee ee: ee<br>300 240<br>oan AA /<br>A “ /<br>200<br>See<br>200 160<br>“A tie eeeee<br>See<br>120<br>ieee eee<br>ee os<br>100 4 80 /<br>4<br>ee ee ee;<br>40<br>PPL7 ewel? e<br>0 0<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
7
IGBT-Module IGBT-modules
## F3L200R07PE4
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Erec =f(I F) Erec =f(R G)<br>RGon !'5 Ω ,V CE =300V IF = 200A, V CE = 300 V<br>6 6 LS<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>5 5<br>4 4<br>3 3<br>2 WAL TE 2 LEN<br>1 1<br>0 0<br>0 40 80 120 160 200 240 280 320 360 400 0 3 6 9 12 15 18 21 24 27 30<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Durchlasskennlinie der Diode, 3-Level (typisch)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, 3-Level (typical)<br>ZthJC = f (t) IF =f(V F)<br>1 400<br>ZthJC : Diode Tvj = 25°C<br>H—oe a FH eee 360 m T J! vj = 125°C 11147) za<br>Tvj = 150°C<br>A | Eb TT i]<br>320<br>Pe PTT] dA<br>280<br>a2/ A | Pet<br>240<br>a<br>0,1 200<br>PT TTA<br>PTEHHTTA ETae 160 PTT Ty | 7RATT<br>CAI 120 Pt ft | LAE ff<br>PATH OT ETE TTT At<br>PALIT PE 80 PT | | | BRT Yd<br>i: 1 2 3 4<br>A r τ ii[K/W]: [s]: 0,0252 0,01 0,1386 0,02 0,1344 0,05 0,1218 0,1 40 EZ<br>A Ao! Py<br>0,01 0<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJC [A]IF<br>Z<br>**----- End of picture text -----**<br>
8
## IGBT-ModuleIGBT-modules F3L200R07PE4
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> IGBT-ModuleIGBT-modules F3L200R07PE4
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## F3L200R07PE4
## **Nutzungsbedingungen**
application.
11
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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