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F3L150R07W2H3B11BPSA1
IGBT Module, Four Pack, 150 A, 1.68 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK Series
- IGBT Technology: IGBT H3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: Four Pack
- Transistor Mounting: Panel
- DC Collector Current: 150A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 150A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.68V
- Collector Emitter Saturation Voltage Vce(on): 1.68V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 43.65 € |
| Current stock | 25+ |
| Lead time | 30 days |
Datasheet
**F3L150R07W2H3_B11** **EasyPACK[™] module** ## **EasyPACK[™] module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC** ## **Features** - Electrical features - VCES = 650 V - IC nom = 150 A / ICRM = 300 A - Increased blocking voltage capability up to 650 V - Low inductive design - Low switching losses - Low V CE,sat - Mechanical features - Al2O3 substrate with low thermal resistance - Compact design - PressFIT contact technology - Rugged mounting due to integrated mounting clamps ## **Potential applications** - Three-level applications - Motor drives - Solar applications - UPS systems ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2021-12-13 **F3L150R07W2H3_B11 EasyPACK[™] module** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, T1 / T4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**3**|**IGBT, T2 / T3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**Diode, D1 / D4**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6| |**5**|**Diode, D2 / D3**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7| |**6**|**Diode, D5 / D6**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8| |**7**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9| |**8**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10| |**9**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18| |**10**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19| |**11**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22| Datasheet Revision 1.00 2021-12-13 2 **F3L150R07W2H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** ## **Insulation coordination** |||||| |---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|3.0|kV| |Internal isolation||basic insulation (class 1, IEC 61140)|Al2O3|| |Creepage distance|_d_Creep|terminal to heatsink|11.5|mm| |Creepage distance|_d_Creep|terminal to terminal|6.3|mm| |Clearance|_d_Clear|terminal to heatsink|10.0|mm| |Clearance|_d_Clear|terminal to terminal|5.0|mm| |Comparative tracking index|_CTI_||>200|| |Relative thermal index<br>(electrical)|_RTI_|housing|140|°C| |**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE|||15||nH| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TH=25°C, per switch||2.8||mΩ| |Storage temperature|_T_stg||-40||125|°C| |Mounting force per clamp|_F_||40||80|N| |Weight|_G_|||39||g| _Note: The current under continuous operation is limited to 25A rms per connector pin_ ## **2 IGBT, T1 / T4** **Table 3 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|650|V| |Implemented collector<br>current|_I_CN|||150|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|85|A| |Repetitive peak collector<br>current|_I_CRM|_t_P= 1 ms||300|A| |Gate-emitter peak voltage|_V_GES|||±20|V| Datasheet Revision 1.00 2021-12-13 3 **F3L150R07W2H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, T1 / T4** |**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 150 A,_V_GE= 15 V|_T_vj= 25 °C||1.68|2.00|V| ||||_T_vj= 125 °C||1.86||| ||||_T_vj= 150 °C||1.89||| |Gate threshold voltage|_V_GEth|_I_C= 2.4 mA, VCE= VGE,_T_vj|= 25 °C|5.05|5.75|6.45|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 400 V|||1.6||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 650 V,_V_GE= 0 V|||9.4||nF| |Reverse transfer capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 650 V,_V_GE= 0 V|||0.28||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 650 V,_V_GE= 0 V|_T_vj= 25 °C|||0.009|mA| |Gate-emitter leakage current|_I_GES|_V_CE= 650 V,_V_GE= 0 V,_T_vj=|25 °C|||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 150 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 7.5 Ω|_T_vj= 25 °C||0.057||µs| ||||_T_vj= 125 °C||0.059||| ||||_T_vj= 150 °C||0.059||| |Rise time (inductive load)|_t_r|_I_C= 150 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 7.5 Ω|_T_vj= 25 °C||0.075||µs| ||||_T_vj= 125 °C||0.076||| ||||_T_vj= 150 °C||0.076||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 150 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 7.5 Ω|_T_vj= 25 °C||0.329||µs| ||||_T_vj= 125 °C||0.359||| ||||_T_vj= 150 °C||0.362||| |Fall time (inductive load)|_t_f|_I_C= 150 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 7.5 Ω|_T_vj= 25 °C||0.024||µs| ||||_T_vj= 125 °C||0.061||| ||||_T_vj= 150 °C||0.077||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 150 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 7.5 Ω, di/dt =<br>1800 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||5.77||mJ| ||||_T_vj= 125 °C||6.97||| ||||_T_vj= 150 °C||7.21||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 150 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 7.5 Ω, dv/dt =<br>3600 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||2.53||mJ| ||||_T_vj= 125 °C||3.46||| ||||_T_vj= 150 °C||3.79||| |Thermal resistance, junction<br>to heat sink|_R_thJH|per IGBT|||0.771||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| Datasheet Revision 1.00 2021-12-13 4 **F3L150R07W2H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **3 IGBT, T2 / T3** ## **3 IGBT, T2 / T3** |**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**|**3**<br>**IGBT, T2 / T3**| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|650|V| |Implemented collector<br>current|_I_CN|||150|A| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 65 °C|85|A| |Repetitive peak collector<br>current|_I_CRM|_t_P= 1 ms||300|A| |Gate-emitter peak voltage|_V_GES|||±20|V| ## **Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 6**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 150 A,_V_GE= 15 V|_T_vj= 25 °C||1.45|1.90|V| ||||_T_vj= 125 °C||1.61||| ||||_T_vj= 150 °C||1.68||| |Gate threshold voltage|_V_GEth|_I_C= 2.4 mA, VCE= 20 V,_T_vj|= 25 °C|5.05|5.75|6.45|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 400 V|||1.6||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 650 V,_V_GE= 0 V|||9.2||nF| |Reverse transfer capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 650 V,_V_GE= 0 V|||0.29||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 650 V,_V_GE= 0 V|_T_vj= 25 °C|||0.009|mA| |Gate-emitter leakage current|_I_GES|_V_CE= 650 V,_V_GE= 0 V,_T_vj=|25 °C|||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 150 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 1.5 Ω|_T_vj= 25 °C||0.015||µs| ||||_T_vj= 125 °C||0.017||| ||||_T_vj= 150 °C||0.017||| |Rise time (inductive load)|_t_r|_I_C= 150 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gon= 1.5 Ω|_T_vj= 25 °C||0.022||µs| ||||_T_vj= 125 °C||0.028||| ||||_T_vj= 150 °C||0.029||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 150 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 1.5 Ω|_T_vj= 25 °C||0.186||µs| ||||_T_vj= 125 °C||0.211||| ||||_T_vj= 150 °C||0.216||| |Fall time (inductive load)|_t_f|_I_C= 150 A,_V_CE= 300 V,<br>_V_GE= ±15 V,_R_Gof= 1.5 Ω|_T_vj= 25 °C||0.094||µs| ||||_T_vj= 125 °C||0.133||| ||||_T_vj= 150 °C||0.147||| **(table continues...)** Datasheet Revision 1.00 2021-12-13 5 **F3L150R07W2H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Diode, D1 / D4** |**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 150 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 1.5 Ω, di/dt =<br>4500 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.341||mJ| ||||_T_vj= 125 °C||0.629||| ||||_T_vj= 150 °C||0.719||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 150 A,_V_CE= 300 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 1.5 Ω, dv/dt =<br>3900 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||3.5||mJ| ||||_T_vj= 125 °C||4.66||| ||||_T_vj= 150 °C||4.98||| |Thermal resistance, junction<br>to heat sink|_R_thJH|per IGBT|||0.771||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **4 Diode, D1 / D4** |**4**<br>**Diode, D1 / D4**|**4**<br>**Diode, D1 / D4**|**4**<br>**Diode, D1 / D4**|||| |---|---|---|---|---|---| |**Table 7**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|650|V| |Continuous DC forward<br>current|_I_F|||100|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||200|A| |I2t - value|_I_2_t_|_V_R= 0 V,_t_P= 10 ms|_T_vj= 125 °C|1750|A²s| ||||_T_vj= 150 °C|1650|| **Table 8 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 100 A,_V_GE= 0 V|_T_vj= 25 °C||1.55|1.95|V| ||||_T_vj= 125 °C||1.50||| ||||_T_vj= 150 °C||1.45||| |Peak reverse recovery<br>current|_I_RM|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>4400 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||92.4||A| ||||_T_vj= 125 °C||102||| ||||_T_vj= 150 °C||106||| **(table continues...)** Datasheet Revision 1.00 2021-12-13 6 **F3L150R07W2H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Diode, D2 / D3** |**Table 8**<br>**(continued) Characteristic values**|**Table 8**<br>**(continued) Characteristic values**|**Table 8**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Recovered charge|_Q_r|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>4400 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||3.93||µC| ||||_T_vj= 125 °C||7.53||| ||||_T_vj= 150 °C||8.78||| |Reverse recovery energy|_E_rec|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>4400 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.859||mJ| ||||_T_vj= 125 °C||1.65||| ||||_T_vj= 150 °C||1.94||| |Thermal resistance, junction<br>to heat sink|_R_thJH|per diode|||0.975||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **5 Diode, D2 / D3** |**5**<br>**Diode, D2 / D3**|**5**<br>**Diode, D2 / D3**|**5**<br>**Diode, D2 / D3**|||| |---|---|---|---|---|---| |**Table 9**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|650|V| |Continuous DC forward<br>current|_I_F|||100|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||200|A| |I2t - value|_I_2_t_|_V_R= 0 V,_t_P= 10 ms|_T_vj= 125 °C|1750|A²s| ||||_T_vj= 150 °C|1650|| |**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 100 A,_V_GE= 0 V|_T_vj= 25 °C||1.55|1.95|V| ||||_T_vj= 125 °C||1.50||| ||||_T_vj= 150 °C||1.45||| |Peak reverse recovery<br>current|_I_RM|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>4400 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||92.4||A| ||||_T_vj= 125 °C||102||| ||||_T_vj= 150 °C||106||| ## **(table continues...)** Datasheet Revision 1.00 2021-12-13 7 **F3L150R07W2H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Diode, D5 / D6** |**Table 10**<br>**(continued) Characteristic values**|**Table 10**<br>**(continued) Characteristic values**|**Table 10**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Recovered charge|_Q_r|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>4400 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||3.93||µC| ||||_T_vj= 125 °C||7.53||| ||||_T_vj= 150 °C||8.78||| |Reverse recovery energy|_E_rec|_I_F= 100 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>4400 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.859||mJ| ||||_T_vj= 125 °C||1.65||| ||||_T_vj= 150 °C||1.94||| |Thermal resistance, junction<br>to heat sink|_R_thJH|per diode|||0.975||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **6 Diode, D5 / D6** |**6**<br>**Diode, D5 / D6**|**6**<br>**Diode, D5 / D6**|**6**<br>**Diode, D5 / D6**|||| |---|---|---|---|---|---| |**Table 11**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|650|V| |Continuous DC forward<br>current|_I_F|||150|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||300|A| |I2t - value|_I_2_t_|_V_R= 0 V,_t_P= 10 ms|_T_vj= 125 °C|2120|A²s| ||||_T_vj= 150 °C|1810|| |**Table 12**<br>**Characteristic values**|**Table 12**<br>**Characteristic values**|**Table 12**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 150 A,_V_GE= 0 V|_T_vj= 25 °C||1.50|2.05|V| ||||_T_vj= 125 °C||1.48||| ||||_T_vj= 150 °C||1.47||| |Peak reverse recovery<br>current|_I_RM|_I_F= 150 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>1800 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||41.8||A| ||||_T_vj= 125 °C||69.7||| ||||_T_vj= 150 °C||75.4||| ## **(table continues...)** Datasheet Revision 1.00 2021-12-13 8 **F3L150R07W2H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 NTC-Thermistor** |**Table 12**<br>**(continued) Characteristic values**|**Table 12**<br>**(continued) Characteristic values**|**Table 12**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Recovered charge|_Q_r|_I_F= 150 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>1800 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||4.93||µC| ||||_T_vj= 125 °C||8.81||| ||||_T_vj= 150 °C||9.27||| |Reverse recovery energy|_E_rec|_I_F= 150 A,_V_R= 300 V,<br>_V_GE= -15 V, -diF/dt =<br>1800 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||0.426||mJ| ||||_T_vj= 125 °C||1.02||| ||||_T_vj= 150 °C||1.22||| |Thermal resistance, junction<br>to heat sink|_R_thJH|per diode|||0.888||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **7 NTC-Thermistor** |**7**<br>**NTC-Thermistor**|**7**<br>**NTC-Thermistor**|**7**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 13**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|_ΔR/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _Note: Specification according to the valid application note._ Datasheet Revision 1.00 2021-12-13 9 **F3L150R07W2H3_B11 EasyPACK[™] module** **8 Characteristics diagrams** **8 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Output characteristic (typical), IGBT, T1 / T4** IC = f(VCE) ## VGE = 15 V **Output characteristic field (typical), IGBT, T1 / T4** IC = f(VCE) T = 150 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 300 300<br>275 275<br>250 250<br>225 225<br>200 200<br>175 175<br>150 150<br>125 125<br>100 100<br>75 75<br>50 50<br>25 25<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Transfer characteristic (typical), IGBT, T1 / T4 Switching losses (typical), IGBT, T1 / T4<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 300 V, VGE = ± 15 V<br>300 22.0<br>275 20.0<br>250<br>18.0<br>225<br>16.0<br>200<br>14.0<br>175<br>12.0<br>150<br>10.0<br>125<br>8.0<br>100<br>6.0<br>75<br>4.0<br>50<br>25 2.0<br>0 0.0<br>5 6 7 8 9 10 11 12 0 50 100 150 200 250 300<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2021-12-13 10 **F3L150R07W2H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **Switching losses (typical), IGBT, T1 / T4 Switching times (typical), IGBT, T1 / T4** E = f(RG) t = f(IC) IC = 150 A, VCE = 300 V, VGE = ± 15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br> **Switching times (typical), IGBT, T1 / T4** t = f(RG) IC = 150 A, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 10 20 30 40 50 60 70 80<br>**----- End of picture text -----**<br> RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 50 100 150 200 250 300<br>**----- End of picture text -----**<br> **Transient thermal impedance , IGBT, T1 / T4** Zth = f(t) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2021-12-13 11 **F3L150R07W2H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **Reverse bias safe operating area (RBSOA), IGBT, T1 / T4** **==> picture [43 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> IC = f(VCE)<br>**----- End of picture text -----**<br> **Output characteristic (typical), IGBT, T2 / T3** IC = f(VCE) VGE = 15 V RGoff = 7.5 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 100 200 300 400 500 600 700<br>**----- End of picture text -----**<br> **Output characteristic field (typical), IGBT, T2 / T3** IC = f(VCE) T = 150 °C vj **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>275<br>250<br>225<br>200<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>**----- End of picture text -----**<br> **Transfer characteristic (typical), IGBT, T2 / T3** IC = f(VGE) VCE = 20 V **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 300 300<br>275 275<br>250 250<br>225 225<br>200 200<br>175 175<br>150 150<br>125 125<br>100 100<br>75 75<br>50 50<br>25 25<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 6 7 8 9 10 11 12<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2021-12-13 12 **F3L150R07W2H3_B11 EasyPACK[™] module** **8 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Transient thermal impedance , IGBT, T2 / T3** Zth = f(t) **Switching losses (typical), IGBT, T2 / T3** E = f(IC) RGoff = 1.5 Ω, RGon = 1.5 Ω, VGE = ±15 V, VCE = 300 V **==> picture [540 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 1 10<br>9<br>8<br>7<br>6<br>0.1 5<br>4<br>3<br>2<br>1<br>0.01 0<br>0.001 0.01 0.1 1 10 0 50 100 150 200 250 300<br>Switching losses (typical), IGBT, T2 / T3 Switching times (typical), IGBT, T2 / T3<br>E = f(RG) t = f(IC)<br>VGE = ±15 V, IC = 150 A, VCE = 300 V RGoff = 1.5 Ω, RGon = 1.5 Ω, VGE = ±15 V, VCE = 300 V, Tvj = 150<br>°C<br>7.5 10<br>7.0<br>6.5<br>6.0<br>1<br>5.5<br>5.0<br>4.5<br>4.0<br>0.1<br>3.5<br>3.0<br>2.5<br>2.0<br>0.01<br>1.5<br>1.0<br>0.5<br>0.0 0.001<br>0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2021-12-13 13 **F3L150R07W2H3_B11 EasyPACK[™] module** **8 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** **Switching times (typical), IGBT, T2 / T3 Reverse bias safe operating area (RBSOA), IGBT, T2 / T3** t = f(RG) VGE = ±15 V, IC = 150 A, VCE = 300 V, Tvj = 150 °C IC = f(VCE) RGoff = 1.5 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [540 x 552] intentionally omitted <==** **----- Start of picture text -----**<br> 10 350<br>300<br>250<br>1<br>200<br>150<br>0.1<br>100<br>50<br>0.01 0<br>0 2 4 6 8 10 12 14 16 0 100 200 300 400 500 600 700<br>Forward characteristic (typical), Diode, D1 / D4 Transient thermal impedance, Diode, D1 / D4<br>IF = f(VF) Zth = f(t)<br>200 10<br>180<br>160<br>140<br>1<br>120<br>100<br>80<br>0.1<br>60<br>40<br>20<br>0 0.01<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2021-12-13 14 **F3L150R07W2H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **Switching losses (typical), Diode, D1 / D4** Erec = f(IF) RGon = 1.5 Ω, VR = 300 V **Switching losses (typical), Diode, D1 / D4** Erec = f(RG) IF = 100 A, VR = 300 V **==> picture [540 x 557] intentionally omitted <==** **----- Start of picture text -----**<br> 2.8 2.4<br>2.6 2.2<br>2.4<br>2.0<br>2.2<br>1.8<br>2.0<br>1.6<br>1.8<br>1.6 1.4<br>1.4 1.2<br>1.2 1.0<br>1.0<br>0.8<br>0.8<br>0.6<br>0.6<br>0.4<br>0.4<br>0.2 0.2<br>0.0 0.0<br>0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16<br>Forward characteristic (typical), Diode, D2 / D3 Transient thermal impedance, Diode, D2 / D3<br>IF = f(VF) Zth = f(t)<br>200 10<br>180<br>160<br>140<br>1<br>120<br>100<br>80<br>0.1<br>60<br>40<br>20<br>0 0.01<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2021-12-13 15 **F3L150R07W2H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **Switching losses (typical), Diode, D2 / D3** Erec = f(IF) RGon = 1.5 Ω, VR = 300 V **Switching losses (typical), Diode, D2 / D3** Erec = f(RG) IF = 100 A, VR = 300 V **==> picture [540 x 557] intentionally omitted <==** **----- Start of picture text -----**<br> 2.8 2.4<br>2.6 2.2<br>2.4<br>2.0<br>2.2<br>1.8<br>2.0<br>1.6<br>1.8<br>1.6 1.4<br>1.4 1.2<br>1.2 1.0<br>1.0<br>0.8<br>0.8<br>0.6<br>0.6<br>0.4<br>0.4<br>0.2 0.2<br>0.0 0.0<br>0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16<br>Forward characteristic (typical), Diode, D5 / D6 Transient thermal impedance, Diode, D5 / D6<br>IF = f(VF) Zth = f(t)<br>300 1<br>250<br>200<br>150 0.1<br>100<br>50<br>0 0.01<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.001 0.01 0.1 1 10 100<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2021-12-13 16 **F3L150R07W2H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **Switching losses (typical), Diode, D5 / D6** Erec = f(IF) RGon = 7.5 Ω, VR = 300 V **Switching losses (typical), Diode, D5 / D6** Erec = f(RG) IF = 150 A, VR = 300 V **==> picture [540 x 557] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4 1.5<br>1.3 1.4<br>1.2 1.3<br>1.2<br>1.1<br>1.1<br>1.0<br>1.0<br>0.9<br>0.9<br>0.8<br>0.8<br>0.7<br>0.7<br>0.6<br>0.6<br>0.5<br>0.5<br>0.4<br>0.4<br>0.3<br>0.3<br>0.2 0.2<br>0.1 0.1<br>0.0 0.0<br>0 50 100 150 200 250 300 0 10 20 30 40 50 60 70 80<br>Temperature characteristic (typical), NTC-Thermistor<br>R = f(TNTC)<br>100000<br>10000<br>1000<br>100<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2021-12-13 17 **F3L150R07W2H3_B11 EasyPACK[™] module** **9 Circuit diagram** **9 Circuit diagram** **==> picture [105 x 47] intentionally omitted <==** **==> picture [38 x 57] intentionally omitted <==** ## **Figure 1** Datasheet Revision 1.00 2021-12-13 18 **F3L150R07W2H3_B11 EasyPACK[™] module** **10 Package outlines** **==> picture [105 x 47] intentionally omitted <==** ## **10 Package outlines** **==> picture [156 x 176] intentionally omitted <==** **==> picture [142 x 53] intentionally omitted <==** **==> picture [46 x 33] intentionally omitted <==** **==> picture [113 x 149] intentionally omitted <==** **Figure 2** Datasheet Revision 1.00 2021-12-13 19 **F3L150R07W2H3_B11 EasyPACK[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **11 Module label code** ## **11 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.00 2021-12-13 20 **F3L150R07W2H3_B11 EasyPACK[™] module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2021-08-24|Initial version| |1.00|2021-12-13|Final datasheet| Datasheet Revision 1.00 2021-12-13 21 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2021-12-13 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2021 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABB350-002** Infineon Technologies in customer’s applications. ## 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Updated at April 28, 2026
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