![F3L11MR12W2M1B74BOMA1 — IGBT Module, Six Pack [Full Bridge], 100 A, 1.5 V, 175 °C, Module](/media/4/2/A/86B5145AD4E00A24.webp)
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F3L11MR12W2M1B74BOMA1
IGBT Module, Six Pack [Full Bridge], 100 A, 1.5 V, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK CoolSic
- IGBT Technology: -
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 100A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 100A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.5V
- Collector Emitter Saturation Voltage Vce(on): 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 110.55 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## F3L11MR12W2M1_B74
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VCES = 1200V IC nom = 100A / ICRM = 200A
- 3-Level-Applikationen
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- Robuste Montage durch integrierte Befestigungsklammern
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- Rugged mounting due to integrated mounting clamps
## **Digit**
Datasheet www.infineon.com
2020-09-04
F3L11MR12W2M1_B74
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## **Vorläufige�Daten Preliminary�Data**
## **MOSFET�/�MOSFET**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|Drain-Source-Spannung<br>Drain-source voltage|Tvj= 25°C|VDSS||1200|1200|V|
|---|---|---|---|---|---|---|
|Drain-Gleichstrom<br>DC drain current|Tvj= 175°C<br>VGS= 15 V<br>TH= 20°C|ID nom||100||A|
|Gepulster Drainstrom<br>Pulsed drain current|verifiziert durch Design, tplimitiert durch Tvjmax<br>verified by design, tplimited by Tvjmax|ID pulse||200||A|
|Gate-Source Spannung<br>Gate-source voltage||VGSS||-10 / 20||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Einschaltwiderstand<br>Drain-source on resistance|ID nom= 100 A<br>VGS= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|RDS on||11,3<br>14,8<br>16,5||mΩ|
|Gate-Schwellenspannung<br>Gate threshold voltage|ID= 40,0 mA, VDS= VGS<br>(tested after 1ms pulse at VGS= +20 V)<br>Tvj= 25°C|VGS(th)|3,45|4,50|5,15|V|
|Gesamt Gateladung<br>Total gate charge|VGS= -5 V / 15 V<br>VDS= 800 V|QG||0,248||µC|
|Interner Gatewiderstand<br>Internal gate resistor|Tvj= 25°C|RGint||2,0||Ω|
|Eingangskapazität<br>Input capacitance|f = 1 MHz, VGS= 0 V<br>VDS= 800 V<br>Tvj= 25°C|Ciss||7,36||nF|
|Ausgangskapazität<br>Output capacitance|f = 1 MHz, VGS= 0 V<br>VDS= 800 V<br>Tvj= 25°C|Coss||0,44||nF|
|Rückwirkungskapazität<br>Reverse transfer capacitance|f = 1 MHz, VGS= 0 V<br>VDS= 800 V<br>Tvj= 25°C|Crss||0,056||nF|
|COSSSpeicherenergie<br>COSSstored energy|VDS= 800 V<br>VGS= -5 V / 15 V<br>Tvj= 25°C|EOSS||176||µJ|
|Drain-Source-Reststrom<br>Drain-source leakage current|VDSS= 1200 V<br>VGS= -5 V<br>Tvj= 25°C|IDSX||0,40|380|µA|
|Gate-Source-Reststrom<br>Gate-source leakage current|VDS= 0 V<br>Tvj= 25°C<br>VGS= 20 V|IGSS|||400|nA|
|Einschaltverzögerungszeit, induktive Last<br>Turn on delay time, inductive load|ID nom= 100 A, RGon= 3,90Ω<br>VDS= 600 V<br>VGS= -5 V / 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td on||45,1<br>43,9<br>42,0||ns|
|Anstiegszeit, induktive Last<br>Rise time, inductive load|ID nom= 100 A, RGon= 3,90Ω<br>VDS= 600 V<br>VGS= -5 V / 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tr||25,5<br>25,3<br>24,4||ns|
|Abschaltverzögerungszeit, induktive Last<br>Turn off delay time, inductive load|ID nom= 100 A, RGoff= 3,90Ω<br>VDS= 600 V<br>VGS= -5 V / 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|td off||84,2<br>86,7<br>87,5||ns|
|Fallzeit, induktive Last<br>Fall time, inductive load|ID nom= 100 A, RGoff= 3,90Ω<br>VDS= 600 V<br>VGS= -5 V / 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|tf||32,2<br>35,5<br>37,3||ns|
|Einschaltverlustenergie pro Puls<br>Turn-on energy loss per pulse|ID nom= 100 A, VGS= -5 V / 15 V<br>VDS= 600 V, RGon= 3,90Ω<br>LS= 35 nH<br>di/dt = 4,50 kA/µs (Tvj op= 150°C)<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eon||1,00<br>1,15<br>1,24||mJ|
|Abschaltverlustenergie pro Puls<br>Turn-off energy loss per pulse|ID nom= 100 A, VGS= -5 V / 15 V<br>VDS= 600 V, RGoff= 3,90Ω<br>LS= 35 nH<br>du/dt = 21,0 kV/µs (Tvj op= 150°C)<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Eoff||1,62<br>1,85<br>1,93||mJ|
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## **Vorläufige�Daten Preliminary�Data**
|**CharakteristischeWerte/CharacteristicValues**|**CharakteristischeWerte/CharacteristicValues**||min.|typ.<br>max.|typ.<br>max.||
|---|---|---|---|---|---|---|
|Wärmewiderstand, Chip bis Kühlkörper<br>Thermal resistance, junction to heatsink|pro MOSFET / per MOSFET|RthJH||0,580||K/W|
|Temperatur im Schaltbetrieb<br>Temperature under switching conditions||Tvj op|-40||150|°C|
|**BodyDiode/Bodydiode**<br>**HöchstzulässigeWerte/MaximumRatedValues**|||||||
|Body Diode-Gleichstrom<br>DC body diode forward current|Tvj= 175°C<br>VGS= -5 V<br>TH= 20°C|ISD||32||A|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forward voltage|ISD= 100 A<br>VGS= -5 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VDSR||4,60<br>4,35<br>4,30|5,65|V|
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## **Vorläufige�Daten Preliminary�Data**
|**IGBT,3-Level/IGBT,3-Level**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,3-Level/IGBT,3-Level**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|100|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|60|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|200|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 100 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,50<br>1,64<br>1,72|t.b.d.|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 2,50 mA, VCE= VGE, Tvj= 25°C|VGEth|5,15|5,80|6,45|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||1,80||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,5||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||21,7||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,076||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,009|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 100 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,153<br>0,166<br>0,174||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 100 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,033<br>0,037<br>0,04||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 100 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,283<br>0,368<br>0,421||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 100 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,149<br>0,221<br>0,273||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 100 A, VCE= 600 V, Lσ= 35 nH<br>di/dt = 2400 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||6,75<br>9,80<br>11,5||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 100 A, VCE= 600 V, Lσ= 35 nH<br>du/dt = 2700 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||6,60<br>10,2<br>12,7||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>Tvj= 175°C<br>tP ≤8 µs,<br>tP ≤7 µs,|ISC||370<br>350||A<br>A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,920||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
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## **Vorläufige�Daten Preliminary�Data**
## **Diode,�3-Level�/�Diode,�3-Level**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|100|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|970<br>860|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,72<br>1,59<br>1,52|t.b.d.|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 2400 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||95,5<br>119<br>134||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 100 A, - diF/dt = 2400 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||8,64<br>15,1<br>20,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 2400 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||3,13<br>5,83<br>7,58||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||1,03||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
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## **Vorläufige�Daten Preliminary�Data**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|3,0<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||15||nH|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|Gewicht<br>Weight||G||39||g|
The current under continuous operation is limited to 25 A rms per connector pin. Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN 2018-09 must be considered to ensure sound operation of the device over the planned lifetime. Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
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## **Vorläufige�Daten Preliminary�Data**
**Ausgangskennlinie�MOSFET�(typisch) output�characteristic�MOSFET�(typical)** ID�=�f�(VDS) VGS�=�15�V
**Ausgangskennlinie�MOSFET�(typisch) output�characteristic�MOSFET�(typical)** ID�=�f�(VDS) Tvj�=�150°C
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200 200<br>Tvj = 25°C VGS = 19 V<br>Tvj = 125°C VGS = 17 V<br>180 T vj = 150°C 180 V GS = 15 V<br>VGS = 13 V<br>VGS = 11 V<br>160 160 V GS = 9 V<br>VGS = 7 V<br>140 140<br>120 120<br>100 100<br>80 80<br>60 60<br>40 40<br>20 20<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VDS [V] VDS [V]<br> [A]ID [A]ID<br>**----- End of picture text -----**<br>
**Übertragungscharakteristik�MOSFET�(typisch) transfer�characteristic�MOSFET�(typical)** ID�=�f�(VGS) VDS�=�20�V
**Kapazitäts�Charakteristik�MOSFET�(typisch) capacity�characteristic�MOSFET�(typical)** C�=�f�(VDS) VGS�=�0�V,�Tvj�=�25°C,�f�=�1MHz
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200 100<br>Tvj = 25°C Cies<br>Tvj = 125°C C oes<br>180 T vj = 150°C C res<br>160<br>10<br>140<br>120<br>100 1<br>80<br>60<br>0,1<br>40<br>20<br>0 0,01<br>4 5 6 7 8 9 10 11 12 0,01 0,1 1 10 100 1000<br>VGS [V] VDS [V]<br> [A]<br>ID C [nF]<br>**----- End of picture text -----**<br>
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Eon =f(l),E D off =f(I D) Eon =f(R),E G off =f(R G)<br>VGS =-5V/15V,R Gon =39 Ω ,R Goff =39 Ω ,V DS =600V VGS = -5V/15V,1 D =100A,V DS =600V<br>5,0 12,0<br>j<br>EEonon, T, Tvjvj = 125°C = 150°C 11,0 E E on on , T , T vj vj = 125°C = 150 ° C Y, y<br>4,5 E off , T vj = 125°C Eoff, Tvj = 125°C Ya<br>Eoff, Tvj = 150°C a Eoff, Tvj = 150°C Y/,<br>A<br>a 10,0<br>4,0 7 “y<br>“7ct 9,0<br>XA<br>3,5 “7<br>“7 8,0<br>3,0<br>7,0<br>2,5 ae 6,0 we<br>Ly 7<br>ae<br>awe<br>2,0 ae ae 5,0<br>a aa<br>“7 _ 4,0 37<br>1,5 oF — 27<br>3,0<br>1,0 “7 ry,<br>2,0 ty<br>2 Y<br>0,5<br>1,0<br>0,0 0,0<br>0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 35 40<br>ID [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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ID =f(V DS) ZthJH =f (t)<br>VGS =-5V/15V,T vj =150°C,R G =3,9 Ω<br>250 1<br>ID, Modul Zth: MOSFET<br>ID, Chip<br>er eat eal<br>200<br>150<br>0,1<br>100<br>50<br>i: 1 2 3 4<br>ri[K/W]: 0,0202 0,0668 0,136 0,357<br>τ i[s]: 0,000693 0,00891 0,0546 0,276<br>0 0,01<br>0 200 400 600 800 1000 1200 1400 0,001 0,01 0,1 1 10<br>VDS [V] t [s]<br> [A]ID [K/W]thJH<br>Z<br>**----- End of picture text -----**<br>
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## **Vorläufige�Daten Preliminary�Data**
**Ausgangskennlinie�IGBT,3-Level�(typisch) output�characteristic�IGBT,3-Level�(typical)** IC�=�f�(VCE) VGE�=�15�V
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200<br>Tvj = 25°C<br>Tvj = 125°C<br>180 T vj = 175°C<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
**Übertragungscharakteristik�IGBT,3-Level�(typisch) transfer�characteristic�IGBT,3-Level�(typical)** IC�=�f�(VGE) VCE�=�20�V
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200<br>Tvj = 25°C<br>Tvj = 125°C<br>180 T vj = 175°C<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>5 6 7 8 9 10 11 12 13<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
**Ausgangskennlinienfeld�IGBT,3-Level�(typisch) output�characteristic�IGBT,3-Level�(typical)** IC�=�f�(VCE) Tvj�=�175°C
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200<br>VGE = 19V<br>VGE = 17V<br>180 V GE = 15V<br>VGE = 13V<br>VGE = 11V<br>160 V GE = 9V<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
**Schaltverluste�IGBT,3-Level�(typisch) switching�losses�IGBT,3-Level�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC)
VGE�=�±15�V,�RGon�=�1,8� Ω ,�RGoff�=�1,8� Ω ,�VCE�=�600�V
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35<br>Eon, Tvj = 125°C<br>Eon, Tvj = 175°C<br>30 EEoff off , T, Tvj vj = 125°C = 175°C<br>25<br>20<br>15<br>10<br>5<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br>
9
V�2.0 2020-09-04
Datasheet
F3L11MR12W2M1_B74
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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =100A,V CE =600V VGE =415V,R Gon =18 Ω ,R Goff =18 Ω ,V CE =600V,T vj =175°C<br>40 10<br>| a<br>EEonon, T, Tvjvj = 125°C = 175°C x i ttdon r ee<br>35 EEoffoff, T, Tvjvj = 125°C = 175°C tt dofff<br>30 1<br>25<br>20 0,1<br>15 :<br>—<br>a<br>10 ___| 0,01 Za<br>a ee<br>5<br>it Pe<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 20 0 50 100 150 200<br>RG [ Ω ] IC [A]<br>Schaltzeiten IGBT,3-Level (typisch) dv/dt IGBT,3-Level (typisch)<br>switching times IGBT,3-Level (typical) dv/dt IGBT,3-Level (typical)<br>tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) dv/dt= f(R G)<br>VGE =+15V,1 C =100A,V CE =600V,T vj =175°C VGE =+15V,1 C =100A,V CE =600V,T vj =25°C<br>10 a a a 8<br>tdon dv/dt-on at 1/10 x IC<br>| t r a dv/dt-off at IC<br>| t doff J ne<br>t f 7<br>6<br>1<br>5<br>4<br>—- 3 N<br>0,1 _-— “N<br>So = “\<br>f “N<br>2<br>1<br>| a<br>0,01 0<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20<br>RG [ Ω ] RG [Ohm]<br>E [mJ] t [µs]<br>t [µs]<br>dv/dt [V/ns]<br>**----- End of picture text -----**<br>
10
Datasheet
2020-09-04
F3L11MR12W2M1_B74
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ZthJH =f (t) IC =f(V CE)<br>VGE =415V,R Goff =18 Ω ,T vj =175°C<br>1 250<br>ZthJH : IGBT IC, Modul<br>IC, Chip<br>pt A 200 ar<br>150<br>0,1<br>100<br>50<br>i: 1 2 3 4<br>ri[K/W]: 0,0149 0,0501 0,094 0,761<br>τ i[s]: 0,000574 0,00939 0,0584 0,307<br>0,01 0<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400<br>t [s] VCE [V]<br>Kapazitats Charakteristik IGBT,3-Level (typisch) Gateladungs Charakteristik IGBT,3-Level (typisch)<br>capacity characteristic IGBT,3-Level (typical) gate charge characteristic IGBT,3-Level (typical)<br>C=f(V CE) VGE =f(Q G)<br>VGE =0OV,T vj = 25°C,f = 100kHz IC =100A,T vj =25°C<br>1000 Oe 15 {|<br>Cies VCE = 600 V<br>Coes<br>Cres<br>100 10<br>10 5<br>1 0<br>ee<br>—————<br>0,1 _eeSeeeS ———E——E———E———E— -5<br>SSS SSS SSS<br>0,01 -10<br>0,001 -15<br>0 10 20 30 40 50 60 70 80 90 100 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8<br>VCE [V] QG [µC]<br> [K/W]thJH [A]IC<br>Z<br> [V]<br>GE<br>C [nF] V<br>**----- End of picture text -----**<br>
11
Datasheet
2020-09-04
F3L11MR12W2M1_B74
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IF =f(V F))<br>**----- End of picture text -----**<br>
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F =f(V F)) Erec =fil F)<br>RGon =1,8 Ω ,V CE =600V<br>200 12<br>180 TT T vjvjvj = 25°C = 125°C = 175°C / ! / 11 E E rec rec , T , T vj vj = 125°C = 175 ° C _<br>/ 10<br>160 f/<br>i<br>/ / 9<br>140 i/ /<br>if/ 8 7 7<br>/ 4<br>120 7<br>7<br>100 6<br>/<br>80 5 7<br>/<br>4 /<br>60 /<br>/<br>3 /<br>40 /<br>2 ry<br>"4<br>20<br>1<br>0 0<br>ae ee eee<br>0,0 0,5 1,0 1,5 2,0 2,5 0 20 40 60 80 100 120 140 160 180 200<br>VF [V] IF [A]<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>
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Erec =f(R G) ZthJH =f (t)<br>IF =100A,V CE =600V<br>10 10 aee<br>9 = EErecrec, T, Tvjvj = 125°C = 175°C | H— [P] PT ZthJH : Diode [EP] Ueee<br>8<br>7<br>1<br>6 SSE<br>— ™ EeCanth cet<br>5<br>4<br>0,1<br>3 ——— Vi<br>2<br>i: 1 2 3 4<br>1 ri[K/W]: 0,043 0,217 0,625 0,145<br>τ i[s]: 0,000748 0,0195 0,152 0,666<br>0 0,01<br>0 2 4 6 8 10 12 14 16 18 20 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
12
Datasheet
2020-09-04
F3L11MR12W2M1_B74
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## **Vorläufige�Daten Preliminary�Data**
**NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(TNTC)
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100000<br>Rtyp<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
13
V�2.0 2020-09-04
Datasheet
F3L11MR12W2M1_B74
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## **Schaltplan�/�Circuit�diagram**
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J<br>**----- End of picture text -----**<br>
## **Vorläufige�Daten Preliminary�Data**
## **Gehäuseabmessungen�/�Package�outlines**
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14
V�2.0 2020-09-04
Datasheet
## **Trademarks**
## **WARNHINWEIS**
## **WARNINGS**
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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