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ESH2DFSH
Fast / Ultrafast Diode, 200 V, 2 A, Single, 960 mV, 25 ns, 80 A
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: TAIWAN SEMICONDUCTOR
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: No SVHC (27-Jun-2018)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: AEC-Q101
- Diode Case Style: SOD-128
- Diode Configuration: Single
- Forward Voltage Max: 960mV
- Forward Surge Current: 80A
- Reverse Recovery Time: 25ns
- Average Forward Current: 2A
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.109 € |
| Current stock | 10+ |
| Lead time | 30 days |
**ESH2DFSH** Taiwan Semiconductor ## **2A, 200V Ultra Fast Surface Mount Rectifier** ## FEATURES - AEC-Q101 qualified - Glass passivated chip junction - Ideal for automated placement - Low profile package - Ultra Fast recovery time for high efficiency - Moisture sensitivity level: level 1, per J-STD-020 - RoHS Compliant - Halogen-free according to IEC 61249-2-21 |KEY PARAMETERS|KEY PARAMETERS|KEY PARAMETERS| |---|---|---| |PARAMETER|VALUE|UNIT| |IF|2|A| |VRRM|200|V| |IFSM|80|A| |TJ MAX|175|°C| |Package|SOD-128|| |Configuration|Single die|| ## APPLICATIONS - High frequency rectification - Freewheeling application - Switching mode converters and inverters in automotive ## MECHANICAL DATA - Case: SOD-128 - Molding compound meets UL 94V-0 flammability rating - Terminal: Mattle tin plated leads, solderable per J-STD-002 - Meet JESD 201 class 2 whisker test - Polarity: Indicated by cathode band - Weight: 0.027g (approximately) ## **SOD-128** Cathode—q— Anode |ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)|ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise noted)| |---|---|---|---|---| |PARAMETER||SYMBOL|ESH2DFSH|UNIT| |Marking code on the device|||H2DFSH|| |Repetitive peak reverse voltage||VRRM|200|V| |Reverse voltage, total rms value||VR(RMS)|140|V| |Forward current||IF|2|A| |Surge peak forward current single half<br>sine-wave superimposed on rated load|t = 8.3ms|IFSM|80|A| ||t = 1.0ms||136|A| |Junction temperature||TJ|- 55 to +175|°C| |Storage temperature||TSTG|- 55 to +175|°C| 1 Version: C2103 $$$ **ESH2DFSH** Taiwan Semiconductor |THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE|THERMAL PERFORMANCE| |---|---|---|---| |PARAMETER|SYMBOL|TYP|UNIT| |Junction-to-lead thermal resistance|RӨJL|17|°C/W| |Junction-to-ambient thermal resistance|RӨJA|67|°C/W| |Junction-to-case thermal resistance|RӨJC|13|°C/W| **Thermal Performance Note:** Units mounted on PCB (5mm x 5mm Cu pad test board) |ELECTRICAL SPECIFICATIONS(TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS(TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS(TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS(TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS(TA= 25°C unless otherwise noted)<br>~~a~~|ELECTRICAL SPECIFICATIONS(TA= 25°C unless otherwise noted)<br>~~a~~| |---|---|---|---|---|---| |PARAMETER<br>~~a~~|CONDITIONS<br>~~a~~|SYMBOL<br>~~a~~|TYP<br>~~a~~|MAX<br>~~a~~|UNIT<br>~~a~~| |Forward voltage(1)<br>~~a~~<br>~~a~~|IF= 1.0A, TJ= 25°C<br>~~a~~<br>~~a~~|VF<br>~~a~~<br>~~a~~<br>~~ee~~|0.83<br>~~a~~<br>~~a~~|-<br>~~a~~<br>~~a~~|V<br>~~a~~<br>~~a~~| ||IF= 2.0A, TJ= 25°C<br>~~a~~<br>~~——~~||0.85<br>~~a~~|0.96<br>~~a~~|V<br>~~a~~| ||IF= 1.0A, TJ= 125°C<br>~~——~~<br>~~——~~||0.66|-|V| ||IF= 2.0A, TJ= 125°C<br>~~——~~<br>~~a~~<br>~~ee~~||0.74<br>~~ee~~|0.89<br>~~ee~~|V<br>~~ee~~| |Reverse current @ rated VR<br>(2)<br>~~a~~|TJ= 25°C<br>~~a~~<br>~~ee~~|IR<br>~~ee~~|-<br>~~ee~~|5<br>~~ee~~|µA<br>~~ee~~| ||TJ= 125°C<br>~~ee~~<br>~~a~~||-<br>~~ee~~|41<br>~~ee~~|µA<br>~~ee~~| |Junction capacitance<br>~~a~~|1MHz, VR= 4.0V<br>~~ee~~<br>~~ee~~|CJ<br>~~ee~~<br>~~ee~~|27<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|pF<br>~~ee~~| |Reverse recovery time<br>~~ae~~|IF= 0.5A, IR= 1.0A<br>Irr= 0.25A<br>~~ae~~<br>~~ee~~|trr<br>~~ae~~<br>~~ee~~|-<br>~~ae~~<br>~~ee~~|25<br>~~ae~~|ns<br>~~ae~~| **Notes:** 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms |ORDERING INFORMATION|ORDERING INFORMATION|ORDERING INFORMATION| |---|---|---| |ORDERING CODE|PACKAGE|PACKING| |ESH2DFSH|SOD-128|14,000 / Tape & Reel| 2 Version: C2103 **ESH2DFSH** (ju Taiwan Semiconductor SEMICONDUCTOR(ju ## CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) ## **Fig.1 Forward Current Derating Curve** **Fig.2 Typical Junction Capacitance** **==> picture [217 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>0 25 50 75 100 125 150 175<br>LEAD TEMPERATURE (°C)<br>AVERAGE FORWARD CURRENT (A)<br>**----- End of picture text -----**<br> **==> picture [230 x 179] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Po<br>es<br>eees es ee<br>P| PBA<br>10 PSL<br>po<br>a<br>aee eeee ee<br>f=1.0MHz<br>Vsig=50mVp-p<br>1<br>1 10 100<br>REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Fig.3 Typical Reverse Characteristics** **Fig.4 Typical Forward Characteristics** **==> picture [485 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>TJ=175 ° C<br>=—— a — === TJ=175 ° C ee<br>10 a ee ee<br>10 TJ=150 ° C<br>1 ° TJ=150 ° C °<br>== TJ=125 C —S"SAe— TJ=25 C<br>i Wi<br>1 TJ=125 ° C<br>0.1<br>Pulse width 300μs<br>POa eee— TJ=25 ° C esa eses | a 1% duty cycle Pulse width 300μs 1% duty cycle<br>0.01 ao 0.1 V a a<br>10 20 30 40 50 60 70 80 90 100 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4<br>PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)<br> Fig.5 Typical Transient Thermal Impedance<br>100<br>10<br>1<br>0.1<br>0.01<br>0.001<br>0.0001 LT TTT PP EEPPP<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100<br>PULSE DURATION (s)<br>INSTANTANEOUS REVERSE CURRENT (μA) INSTANTANEOUS FORWARD CURRENT (A)<br>TRANSIENT THERMAL IMPEDANCE (°C/W)<br>**----- End of picture text -----**<br> 3 Version: C2103 **ESH2DFSH** [upg Taiwan Semiconductor SEMICONDUCTOR[upg ## PACKAGE OUTLINE DIMENSIONS **SOD-128** ## SUGGESTED PAD LAYOUT ## MARKING DIAGRAM P/N = Marking Code YW = Date Code F = Factory Code 4 Version: C2103 **ESH2DFSH** (i Taiwan Semiconductor SEMICONDUCTOR(i ## **Notice** Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 Version: C2103
Updated at June 4, 2026
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