ES3B.

## **Is Now Part of** 

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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## **ES3A - ES3J Fast Rectifiers** 

## **Features** 

- For Surface Mount Applications 

- Glass-Passivated Junction 

- Low-Profile Package 

- Easy Pick and Place 

- Built-in Strain Relief 

- Superfast Recovery Times for High Efficiency 

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SMC/DO-214AB<br>              COLOR BAND DENOTES CATHODE<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|
|---|---|---|---|
|ES3A|ES3A|DO-214AB (SMC)|Tape and Reel|
|ES3B|ES3B|DO-214AB (SMC)|Tape and Reel|
|ES3C|ES3C|DO-214AB (SMC)|Tape and Reel|
|ES3D|ES3D|DO-214AB (SMC)|Tape and Reel|
|ES3J|ES3J|DO-214AB (SMC)|Tape and Reel|



## **Absolute Maximum Ratings** 

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. 

|**Symbol**|**Parameter**|**Value**|**Value**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|---|
|||**ES3A**|**ES3B**|**ES3C**|**ES3D**|**ES3J**||
|VRRM|Maximum Repetitive Reverse Voltage|50|100|150|200|600|V|
|IF(AV)|Average Rectified Forward Current,<br>.375” Lead Length at TA= 75°C|3.0|||||A|
|IFSM|Non-Repetitive Peak Forward Surge Current<br>8.3 ms Single Half-Sine Wave|100|||||A|
|TJ, TSTG|Operating Junction and Storage Temperature Range|-50 to +150|||||C|



© 1999 Fairchild Semiconductor Corporation ES3A - ES3J Rev. 2.11 

www.fairchildsemi.com 

## **Thermal Characteristics** 

Values are at TA = 25°C unless otherwise noted. 

**Symbol Parameter Value Unit** PD Power Dissipation 1.66 W RJA Thermal Resistance, Junction to Ambient[(1)] Minimum Land Pattern: 2.6 x 3.2 mmMaximum Land Pattern: 16 x 16 mm 12547 C/W RJL Thermal Resistance, Junction to Lead[(1)] Minimum Land Pattern: 2.6 x 3.2 mmMaximum Land Pattern: 16 x 16 mm 1612 C/W ~~——~~ **Note:** 1. Device mounted on FR-4 PCB 0.013 mm. 

## **Electrical Characteristics** 

Values are at TA = 25°C unless otherwise noted. **Value Symbol Parameter Conditions Unit ES3A ES3B ES3C ES3D ES3J** VF Maximum Forward Voltage IF = 3.0 A 0.95 1.70 V IF = 0.5 A, **Typ.** 20 35 trr Reverse Recovery Time IR = 1.0 A, ns **Max.** 30 45 IRR = 0.25 A Maximum Reverse Current TA = 25C 10 IR at Rated VR TA = 100C 500 A CT Total Capacitance VR = 4.0 V, f = 1.0 MHz 45 pF ~~=a~~ 

© 1999 Fairchild Semiconductor Corporation ES3A - ES3J Rev. 2.11 

www.fairchildsemi.com 

2 

## **Typical Performance Characteristics** 

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100<br>3.5<br>3 ES3A-ES3D<br>10<br>2.5<br>Ss Geaues -acdis ES3J<br>2<br> SINGLE PHASE 1<br>1.5  HALF WAVE<br> 60HZ sais20 cca<br> RESISTIVE OR<br>1  INDUCTIVE LOAD .375" (9.0mm) LEAD 0.1 TA=25 oC<br>0.5  LENGTHS Pulse Width = 300us<br>2% Duty Cycle<br>0 0.01 Le<br>0 25 50 75 100 125 150 175 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>Ambient Temperature [ºC]<br>Forward Voltage Drop, VF[V]<br>Figure 1. Forward Current Derating Curve Figure 2. Foward Voltage Characteristics<br>100 1000<br>90<br>80 OE A SSS SS  T   = 100  C                  A  º ae<br>100<br>70<br>60  T   = 75  C                  A  º<br>5040 LTT NE EE TT 10 SSS<br>30 OE SS<br>20 1  T   = 25  C                 A  º<br>10 Se —-—+_ +++ 44<br>0 PTT etTT TEte 0.1 ===ee ==<br>0.1 0.5 1 5 10 20 50 100 500 0 20 40 60 80 100 120 140<br>Reverse Voltage, VR [V] Percent of Rated Peak Reverse Voltage [%]<br>Figure 3. Total Capacitance Figure 4. Reverse Current vs. Reverse Voltage<br>50 50 b —  trr +<br>NONINDUCTIVE NONINDUCTIVE +0.5A Nee<br>(-) PY]<br>DUT  0<br>Pulse<br>50V Generator -0.25A P| | tr| Tt<br>(approx) (Note 2)<br>Pf | FT<br>50 (+)<br>OSCILLOSCOPE<br>NONINDUCTIVE | ft tt tt<br>(Note 1)<br>-1.0A<br>aN   1.0cm           SET TIME BASE FOR<br>NOTES:    5/ 10 ns/ cm<br>1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.<br>2. Rise time = 10 ns max; Source impedance = 50 ohms.<br> [A]<br>F<br>Forward Current, I[A]F<br>Average Rectified Forward Current, I<br> [pF]<br>T  [   A]<br>R<br>Total Capacitance, C Reverse Current, I μ<br>**----- End of picture text -----**<br>


**Figure 4. Reverse Current vs. Reverse Voltage** 

**Figure 5. Reverse Recovery Time Characteristic and Test Circuit Diagram** 

© 1999 Fairchild Semiconductor Corporation ES3A - ES3J Rev. 2.11 

www.fairchildsemi.com 

3 

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B [8.15]<br>7.75<br> 1.96<br>[6.25] [3.27]  3.39<br>5.55 2.75 B<br> 6.81<br>0.13 [M] C B A<br>A [7.15] LAND PATTERN RECOMMENDATION<br>6.60<br>TOP VIEW<br>R0.15 [8°]<br>0°<br>[2.45] A  2.65 MAX  4X<br>1.90<br>GAGE<br>C PLANE [0.41]<br>0.15<br>SEATING<br>PLANE<br>[0.30] [0.203] 0.050 B<br>0.05 [4.70]<br>4.40 0.45 [8°]<br>0.13 [M] C B A [1.60] 0°<br>0.75<br>SIDE VIEW<br>DETAIL A<br>NOTES: SCALE 2:1<br>A. EXCEPT WHERE NOTED, CONFORMS TO<br>        JEDEC DO-214, VARIATION AB<br>B DOES NOT COMPLY TO JEDEC STD. VALUE<br>C.     ALL DIMENSIONS ARE IN MILLIMETERS<br>D.     DIMENSIONS ARE EXCLUSIVE OF BURRS,<br>         MOLD FLASH, AND TIE BAR PROTRUSIONS.<br>E.     DIMENSIONS AND TOLERANCING AS PER<br>        ASME Y14.5-2009<br>**----- End of picture text -----**<br>


- F.     LAND PATTERN STANDARD: DIOM7957X241M G.     DRAWING FILENAME: MKT-DO214ABrev2 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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