ES2DAF
Fast / Ultrafast Diode, 200 V, 2 A, Single, 950 mV, 35 ns, 50 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):2A; Diode Configuration:Single; Forward Voltage VF Max:950mV; Reverse Recovery Time trr Max:35ns; Forward Surge Curr
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: DO-214AD
- Diode Configuration: Single
- Forward Voltage Max: 950mV
- Forward Surge Current: 50A
- Reverse Recovery Time: 35ns
- Average Forward Current: 2A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.216 € |
| Current stock | 500+ |
| Lead time | 30 days |
## ES2DAF ## Surface Mount Ultrafast Rectifier ## **Features** - Fast Switching Speed – Maximum Trr 35 ns - Ultra Thin Profile − Maximum Height of 1.0 mm - Glass Passivated Junction - UL Flammability 94V−0 Classification - MSL 1 - Green Mold Compound ## **www.onsemi.com** 1 2 ~~o—_lbq—e~~ Cathode Anode **Ultrafast Rectifier** - These Devices are Pb−Free, Halogen Free Free and are RoHS Compliant ## **Specifications** **ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) |**Symbol**<br>~~iat~~|**Parameter**<br>~~iat~~|**Value**<br>~~iat~~|**Unit**<br>~~iat~~| |---|---|---|---| |VRRM<br>~~iat~~|Recurrent Peak Reverse Voltage<br>~~iat~~|200<br>~~iat~~|V<br>~~iat~~| |VRMS<br>~~iat~~|RMS Reverse Voltage<br>~~iat~~|140<br>~~iat~~|V<br>~~iat~~| |VR<br>~~iat~~|DC Blocking Voltage<br>~~iat~~|200<br>~~iat~~|V<br>~~iat~~| |IF(AV)<br>~~iat~~|Average Forward Current<br>~~iat~~|2<br>~~iat~~|A<br>~~iat~~| |IFSM<br>~~iat~~|Peak Forward Surge Current: 8.3 ms<br>Single Half Sine−Wave Superimposed<br>on Rated Load (JEDEC Method)<br>~~iat~~|50<br>~~iat~~|A<br>~~iat~~| |TJ<br>~~iat~~|Operating Junction Temperature Range<br>~~iat~~|−55 to +150<br>~~iat~~|°C<br>~~iat~~| |TSTG<br>~~iat~~|Storage Temperature Range<br>~~iat~~|−55 to +150<br>~~iat~~|°C<br>~~iat~~| **DO−214AD (SMAF) CASE 403AD** ## **MARKING DIAGRAM** $Y&Z&3 ES2DAF Band Indicates Cathode $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) ES2DAF = Specific Device Code ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: **1** © Semiconductor Components Industries, LLC, 2015 **May, 2018 − Rev. 2** **ES2DAF/D** ## **ES2DAF** **THERMAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**THERMAL**|**CHARACTERISTICS**(TA= 25°C unless otherwise noted)||| |---|---|---|---| |**Symbol**|**Characteristic**|**Value**|**Unit**| |�JL|Typical Thermal Characteristics, Junction−to−Lead (Note 1)|25|°C/W| |R�JA|Typical Thermal Resistance, Junction−to−Ambient (Note 2)|150|°C/W| 1. Mounted on an FR4 PCB, single−sided copper, with 100 cm[2] copper pad area. 2. Mounted on an FR4 PCB, single−sided copper, mini pad. **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) |**ELECTRIC**|**AL CHARACTERISTICS**(TA= 25°|C unless otherwise noted)||||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**|**Conditions**|**Min**|**Typ**|**Max**|**Unit**| |VF|Forward Voltage|IF= 2.0 A|−|−|0.95|V| |IR|Reverse Current|VR= 200 V|−|−|1|�A| |trr|Reverse Recovery Time|IF= 0.5 A, IR= 1.0 A, Irr= 0.25 A|−|−|35|ns| |CJ|Junction Capacitance|VR= 4 V, f = 1 MHz|−|30|−|pF| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ## **ORDERING INFORMATION** |**ORDERING INFORMATION**|||| |---|---|---|---| |**Part Number**|**Top Mark**|**Package**|**Shipping**†| |ES2DAF|ES2DAF|DO−214AD (SMAF)<br>(Pb−Free/Halogen Free)|10000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **2** **ES2DAF** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [212 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> 2.5<br>2<br>1.5<br>1<br>0.5<br>0<br>0 25 50 75 100 125 150<br>TC, Case Temperature ( � C)<br>, Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 1. Forward Current Derating Curve** **==> picture [217 x 140] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10<br>1<br>1 10 100<br>VR, Reverse Bias Voltage (V)<br>, Junction Capacitance (pF)<br>J<br>C<br>**----- End of picture text -----**<br> **Figure 2. Typical Junction Capacitance** **==> picture [214 x 141] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1 TJ = 125 ° C<br>TJ = 150 ° C<br>0.1<br>TJ = 25 ° C<br>0.01 TJ = 75 ° C<br>0.001<br>20 40 60 80 100<br>Percent of Rated Peak Reverse Voltage (%)<br>A)<br>�<br>, Reverse Current (<br>IR<br>**----- End of picture text -----**<br> **Figure 3. Typical Reverse Characteristics** **==> picture [215 x 139] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>TJ = 150 ° C<br>1<br>TJ = 125 ° C<br>0.1 TJ = 75 ° C<br>TJ = 25 ° C<br>0.01<br>0.2 0.4 0.6 0.8 1<br>VF, Forward Voltage (V)<br>, Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 4. Typical Forward Characteristics** **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [56 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> SMA−FL<br>CASE 403AD<br>ISSUE A<br>**----- End of picture text -----**<br> **==> picture [78 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> DATE 14 JUL 2020<br>**----- End of picture text -----**<br> ## **DOCUMENT NUMBER:** **98AON13439G** **DESCRIPTION: SMA−FL** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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