ES2C

**DATA SHEET www.onsemi.com** 

**SMB CASE 403AF** 

## Fast Rectifiers 

## ES2A-ES2D 

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## **Features** 

- For Surface Mount Applications 

- Glass−Passivated Junction 

## **MARKING DIAGRAM** 

- Low−Profile Package 

- Easy Pick and Place 

- Built−in Strain Relief 

- Superfast Recovery Times for High Efficiency 

ZYWW ES2x 

- These are Pb−Free Devices 

(COLOR BAND DENOTES CATHODE) 

## **ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) 

|**ABSOLU**|**TE MAXIMUM RATINGS**(TA= 25°C u|nless otherwise|noted)|
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|VRRM|Maximum Repetitive Reverse Voltage<br>ES2A<br>ES2B<br>ES2C<br>ES2D|50<br>100<br>150<br>200|V|
|IF(AV)|Average Rectified Forward Current,<br>0.375″Lead Length at TL= 115°C|2.0|A|
|IFSM|Non−Repetitive Peak Forward Surge<br>Current, 8.3 ms Single Half−Sine Wave|50|A|
|TSTG|Storage Temperature Range|−55 to +150|°C|
|TJ|Operating Junction Temperature Range|−55 to +150|°C|



Z = Assembly Plant Code Y = Year WW = Work Week ES2x = Specific Device Code x = A, B, C, D 

## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 3 of this data sheet. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

## **THERMAL CHARACTERISTICS** (TA 

## ° C unless otherwise noted) 

|**THERMAL**|**CHARACTERISTICS**(TA= 25°C unless otherwise noted)|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Value**|**Unit**|
|PD|Power Dissipation|1.66|W|
|RθJA|Thermal Resistance,<br>Junction to Ambient (Note 1)|75|°C/W|
|RθJL|Thermal Resistance,<br>Junction to Lead (Note 1)|20|°C/W|



1. Device mounted on FR−4 PCB 0.013 mm. 

## **ELECTRICAL CHARACTERISTICS** (TA = 25 ° C unless otherwise noted) 

|**ELECTRIC**|**AL CHARACTERISTICS**(TA= 25°C unl|ess otherwise noted)||||||
|---|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Test Conditions**|**Value**||||**Unit**|
||||**ES2A**|**ES2B**|**ES2C**|**ES2D**||
|VF|Maximum Forward Voltage|IF= 2.0 A|0.90||||V|
|trr|Reverse Recovery Time|IF= 0.5 A, IR= 1.0 A,<br>IRR= 0.25 A|20||||ns|
|IR|Maximum Reverse Current at Rated VR|TA= 25�C<br>TA= 100�C|10<br>350||||�A|
|CT|Total Capacitance|VR= 4.0 V, f = 1.0 MHz|18||||pF|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

Publication Order Number: **ES2D/D** 

**1** 

© Semiconductor Components Industries, LLC, 2001 **April, 2022 − Rev. 2** 

**ES2A−ES2D** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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2.5 50 TA = 25 ° C<br>Pulse Width = 300  � s<br>2.0 10 2% Duty Cycle<br>1.5<br>1<br>1.0<br>Single Pulse<br>Half Wave 0.1<br>0.5 60 Hz<br>Resistive or Inductive Load<br>0.375 ″  (9.0 mm) Lead Lengths<br>0 0.01<br>0 20 40 60 80 100 120 140 160 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>Lead Temperature ( � C) VF, Forward Voltage (V)<br>Figure 1. Forward Current Derating Curve Figure 2. Foward Voltage Characteristics<br>60 1000<br>50 TA = 100 ° C<br>100<br>40<br>30 10 TA = 75 ° C<br>20 TA = 25 ° C<br>1<br>10<br>0 0.1<br>1 10 100 0 20 40 60 80 100 120 140<br>Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%)<br>Figure 3. Non−Repetitive Surge Current Figure 4. Reverse Current vs. Reverse Voltage<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0.1 1 10 100 500<br>VR, Reverse Voltage (V)<br>Current (A)<br>, Forward Current (A)<br>IF<br>, Average Rectified Forward<br>IF<br>A)<br>�<br>, Reverse Current (<br>IR<br>, Peak Forward Surge Current (A)<br>IFSM<br>, Total Capacitance (pF)<br>T<br>C<br>**----- End of picture text -----**<br>


**Figure 5. Total Capacitance** 

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**2** 

**ES2A−ES2D** 

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50  � 50  �<br>noninductive noninductive<br>trr<br>+0.5 A<br>(−)<br>DUT<br>Pulse<br>0<br>Generator<br>50 V<br>(Note 3)<br>(approx) −0.25 A<br>(+)<br>50  � Oscilloscope<br>noninductive<br>(Note 2)<br>−1.0 A<br>NOTES: Set Time Base for<br>1.0 cm 5/10 ns/cm<br>**----- End of picture text -----**<br>


2. Rise time = 7.0 ns max; Input impedance = 1.0 M � 22 pF. 3. Rise time = 10 ns max; Source impedance = 50 � . 

## **Figure 6. Reverse Recovery Time Characteristic and Test Circuit Diagram** 

## **ORDERING INFORMATION** 

|**ORDERING INFORMATION**||||
|---|---|---|---|
|**Part Number**|**Device Code Marking**|**Package Type**|**Shipping**†|
|ES2A|ES2A|SMB<br>(Pb−Free)|3000 / Tape & Reel|
|ES2B|ES2B|SMB<br>(Pb−Free)|3000 / Tape & Reel|
|ES2C|ES2C|SMB<br>(Pb−Free)|3000 / Tape & Reel|
|ES2D|ES2D|SMB<br>(Pb−Free)|3000 / Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

**www.onsemi.com** 

**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SMB** CASE 403AF ISSUE O 

DATE 31 AUG 2016 

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5.60<br>B B 5.08 0.13 M C B A<br>2.50<br>3.95 2.20<br>3.30 B 1.91 2.20<br>4.70<br>4.75<br>B 4.05 LAND PATTERN RECOMMENDATION<br>A<br>t ba — ;<br>**----- End of picture text -----**<br>


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8 °<br>0 °<br>2.65 MAX<br>A<br>R0.15  4X<br>GAUGE<br>2.45<br>PLANE<br>1.90<br> 0.45<br>0.41<br>0.30 0.15<br>B 0.2030.050 0.05 0 − 8 °<br>C - =<br>2.15 1.60<br>1.65 0.13 M C B A 0.75<br>DETAIL A<br>SCALE 20 : 1<br>**----- End of picture text -----**<br>


NOTES: 

- A. EXCEPT WHERE NOTED CONFORMS TO JEDEC DO214 VARIATION AA. 

- B DOES NOT COMPLY JEDEC STD. VALUE. 

- C. ALL DIMENSIONS ARE IN MILLIMETERS. 

- D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. 

- E. DIMENSION AND TOLERANCE AS PER ASME Y14.5−1994. 

F. LAND PATTERN STD. DIOM5336X240M. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13441G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: SMB PAGE 1 OF 1** ~~—~~ ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. 

www.onsemi.com 

© Semiconductor Components Industries, LLC, 2019 

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