ES1JAF
Fast / Ultrafast Diode, 600 V, 1 A, Single, 1.7 V, 34 ns, 30 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):1A; Diode Configuration:Single; Forward Voltage VF Max:1.7V; Reverse Recovery Time trr Max:34ns; Forward Surge Cur
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: DO-214AD
- Diode Configuration: Single
- Forward Voltage Max: 1.7V
- Forward Surge Current: 30A
- Reverse Recovery Time: 34ns
- Average Forward Current: 1A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.159 € |
| Current stock | 1000+ |
| Lead time | 30 days |
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [54 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> October 2015<br>**----- End of picture text -----**<br> ## **ES1DAF / ES1JAF Surface Mount Ultrafast Rectifier** ## **Features** - Fast Switching Speed – Maximum Trr 35 ns - Ultra Thin Profile - Maximum Height of 1.0 mm - Glass Passivated Junction - UL Flammability 94V-0 Classification - MSL 1 - RoHS Compliant / Green Mold Compound **==> picture [84 x 85] intentionally omitted <==** **----- Start of picture text -----**<br> SMAF<br>Band Indicates Cathode<br>i 1 2<br>Cathode Anode<br>**----- End of picture text -----**<br> - Industrial Device Qualified per AEC-Q101 Standards. - see authorized use policy ## **Ordering Information** |**Part Number**|**Top Mark**|**Package**|**Packing Method**| |---|---|---|---| |ES1DAF|ES1DAF|DO-214AD (SMAF)|Tape and Reel| |ES1JAF|ES1JAF|DO-214AD (SMAF)|Tape and Reel| ## **Absolute Maximum Ratings** Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. |**Symbol**|**Parameter**|**Value**|**Value**|**Unit**| |---|---|---|---|---| |||**ES1DAF**|**ES1JAF**|| |VRRM|Recurrent Peak Reverse Voltage|200|600|V| |VRMS|RMS Voltage|140|420|V| |VR|DC Blocking Voltage|200|600|V| |IF(AV)|Average Forward Current|1||A| |IFSM|Peak Forward Surge Current: 8.3 ms Single Half Sine-Wave<br>Superimposed on Rated Load|30||A| |TJ|Operating Junction Temperature Range|-55 to +150||°C| |TSTG|Storage Temperature Range|-55 to +150||°C| © 2015 Fairchild Semiconductor Corporation ES1DAF / ES1JAF Rev. 1.2 www.fairchildsemi.com ## **Thermal Characteristics** Values are at TA = 25°C unless otherwise noted. **Symbol Parameter Value Unit** ψ JL Typical Thermal Characteristics, Junction-to-Lead[(1)] 24 ° C/W R θ JA Typical Thermal Resistance, Junction-to-Ambient[(2)] 150 ° C/W ~~——————~~ **Notes:** 1. Mounted on an FR4 PCB, single-sided copper, with 48cm[2 ] copper pad area. 2. Mounted on an FR4 PCB, single-sided copper, mini pad. ## **Electrical Characteristics** Values are at TA = 25°C unless otherwise noted. **Symbol Parameter Conditions Min. Typ. Max. Unit** ES1DAF 0.95 VF Forward Voltage IF = 1 A ES1JAF 1.70 V IR Reverse Current VR = VDC 1 μ A trr Reverse Recovery Time IF = 0.5 A, IR = 1 A, Irr = 0.25 A 34 ns CJ Junction Capacitance VR = 4 V, f = 1 MHz 15 pF ~~SS Se~~ © 2015 Fairchild Semiconductor Corporation ES1DAF / ES1JAF Rev. 1.2 www.fairchildsemi.com 2 ## **Typical Performance Characteristics** **==> picture [441 x 532] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>1.2<br>1<br>0.8<br>0.6 10<br>0.4<br>0.2<br>0 = Eee<br>1<br>0 25 50 75 100 125 150<br>0.1 1 10 100<br>VR, Reverse Bias Voltage (V)<br>TC, Case Temperature ( C)<br>Figure 1. Forward Current Derating Curve Figure 2. Typical Junction Capacitance<br>100 100<br>600V<br>200V TA = 150 C TA = 125 C<br>10 TA = 150 C TA = 125 C<br>10<br>1 => ==<br>1 TA = 75 C<br>0.1<br>0.1<br>0.01<br>TA = 75 C TA = 25 C TA = 25 C<br>0.001 0.01<br>50 100 150 200 20 40 60 80 100<br>VR , Peak Reverse Voltage (V) Percent of Rated Peak Reverse Voltage (%)<br>Figure 3. Typical Reverse Characteristics Figure 4. Typical Reverse Characteristics<br>200V<br>1 1 TA = 150 C 600V<br>TA = 150 C TA = 125 C<br>0.1 TA = 125 C 0.1 TA = 75 C<br>TA = 75 C<br>TA = 25 C<br>TA = 25 C<br>0.01 0.01<br>0 0.5 1 1.5 2<br>0 0.2 0.4 0.6 0.8 1<br>VF, Forward Voltage (V) VF, Forward Voltage (V)<br>, Forward Current (A)<br>IF<br>, Junction Capacitance (pF)<br>J<br>C<br>,Reverse Current (uA)IR ,Reverse Current (uA)IR<br>, Forward Current (A)<br>IF<br>, Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 5. Typical Forward Characteristics** **Figure 6. Typical Forward Characteristics** © 2015 Fairchild Semiconductor Corporation ES1DAF / ES1JAF Rev. 1.2 www.fairchildsemi.com 3 **==> picture [258 x 418] intentionally omitted <==** **----- Start of picture text -----**<br> [1.90] 1.60 [2.70] 2.30<br>[4.00]<br>3.60<br>[0.25]<br>[1.10] 0.10<br>0.90<br>[5.00]<br>4.40<br> 0.38<br> 1.60<br>[0.95] [0.95]<br>0.50 0.50<br> 1.60<br>**----- End of picture text -----**<br> **==> picture [216 x 152] intentionally omitted <==** **----- Start of picture text -----**<br> 2.04 2.04<br> 1.89<br> 1.24<br>**----- End of picture text -----**<br> LAND PATTERN RECOMMENDATION **==> picture [99 x 44] intentionally omitted <==** NOTES: A. THIS PACKAGE DOES NOT CONFORM TO ANY STANDARDS. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. D. LAND PATTERN RECOMMENDATION PER IPC SODFL4725X110N - E. DRAWING FILE NAME: MKT-DO214AD REV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **N. American Technical Support** : 800−282−9855 Toll Free **ON Semiconductor Website** : **www.onsemi.com** USA/Canada ## **LITERATURE FULFILLMENT** : Literature Distribution Center for ON Semiconductor **Order Literature** : http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA **Europe, Middle East and Africa Technical Support: Phone** : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Phone: 421 33 790 2910 **Fax** : 303−675−2176 or 800−344−3867 Toll Free USA/Canada **Japan Customer Focus Center Email** : orderlit@onsemi.com Phone: 81−3−5817−1050 © Semiconductor Components Industries, LLC www.onsemi.com **www.onsemi.com** **1**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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