ES1F

## Fast Rectifiers 

## ES1F-ES1J 

## **Features** 

- For Surface Mount Applications 

- Glass Passivated Junction 

- Low Profile Package 

- Easy Pick and Place 

- Built-in Strain Relief 

- Superfast Recovery Times for High Efficiency 

**ABSOLUTE MAXIMUM RATINGS** (TA = 25 ° C unless otherwise noted) 

|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS**(TA = 25A = 25= 25°C unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA = 25A = 25= 25°C unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA = 25A = 25= 25°C unless otherwise noted)|**ABSOLUTE MAXIMUM RATINGS**(TA = 25A = 25= 25°C unless otherwise noted)|C unless otherwise noted)|
|---|---|---|---|---|---|---|
|**Symbol**|**Parameter**|**Value**||||**Unit**|
|||**ES1F**|**ES1G**|**ES1H**|**ES1J**||
|VRRM|Maximum Repetitive<br>Reverse Voltage|300|400|500|600|V|
|IF(AV)|Average Rectified<br>Forward Current|1.0||||A|
|IFSM|Non-repetitive Peak<br>Forward Surge Current<br>8.3 ms Single<br>Half-Sine-Wave<br>(JEDEC method)|30||||A|
|TJ|Operating Junction<br>Temperature Range|−55 to 150||||°C|
|TSTG|Storage Temperature<br>Range|−55 to 150||||°C|
|PD|Power Dissipation|1.47||||W|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

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## **ORDERING INFORMATION** 

|**Device**|**Package**|**Shipping**†|
|---|---|---|
|ES1F|SMA<br>(Pb−Free)|7500 /<br>Tape & Reel|
|ES1G|SMA<br>(Pb−Free)|7500 /<br>Tape & Reel|
|ES1H|SMA<br>(Pb−Free)|7500 /<br>Tape & Reel|
|ES1J|SMA<br>(Pb−Free)|7500 /<br>Tape & Reel|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification 

Brochure, BRD8011/D. 

**THERMAL CHARACTERISTICS** 

**Symbol Characteristics Value Unit** R θ JA Thermal Resistance, Junction−to−Ambient (Note 1) 85 ° C/W R θ JC Thermal Resistance, Junction−to−Case (Note 1) 61 ° C/W R θ JL Thermal Resistance, Junction−to−Lead (Note 1) 35 ° C/W ~~—{=>~~ 1. P. C. B mounted on 0.2 ″ × 0.2 ″ (5 × 5 mm) copper Pad Area. **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C, unless otherwise noted) 

**Value Symbol Characteristics ES1F ES1G ES1H ES1J Unit** VF Maximum Forward Voltage @ IF = 1.0 A 1.3 1.7 V ~~Ee~~ Trr Maximum Reverse Recovery Time, 35 ns IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A ~~a eeee ee~~ IR Maximum Reverse Current @ rated VR A TA = 25 C 5.0 TA = 100 C 100 Cj Typical Junction Capacitance, VR = 4.0 V, f = 1.0 MHz 10.0 8.0 pF 

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

Publication Order Number: **ES1J/D** 

**1** 

© Semiconductor Components Industries, LLC, 2007 **August, 2020 − Rev. 2** 

**ES1F−ES1J** 

## **TYPICAL PERFORMANCE CHARACTERISTICS** 

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1.2<br>1.0<br>RESISTIVEOR<br>0.8 INDUCTIVELOAD<br>0.2 x 0.2 ″  (5.0 x 5.0 mm)<br>COPPERPADAREAS<br>0.6<br>0.4<br>0.2<br>0<br>80 90 100 110 120 130 140 150<br>Lead Temperature ( � C)<br>Average Forward Current (A)<br>**----- End of picture text -----**<br>


**Figure 1. Maximum Forward Current Derating Curve** 

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2.5<br>2<br>TA = −55 ° C TA = −40 ° C TA = 25 ° C<br>1.5<br>1<br>0.5<br>TA = 85 ° C TA = 125 ° C TA = 150 ° C<br>0<br>0.01 0.1 1 10<br>IF − Forward Current (A)<br> − Forward Voltage (V)<br>F<br>V<br>**----- End of picture text -----**<br>


**Figure 3. Forward Current vs. Forward Voltage** 

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30<br>25 8.3 ms Single Half Sine Wave(JEDEC Method) at TL = 120 ° C<br>20<br>15<br>10<br>5<br>1<br>1 10 100<br>Number of Cycles at 60 Hz<br>Figure 2. Maximum Non-repetitive Peak Forward<br>Surge Current<br>1000<br>100<br>TJ = 125 ° C<br>10<br>T J = 85 ° C<br>1<br>T J  = 25 ° C<br>0.1<br>0.01<br>0 20 40 60 80 100 120 140<br>Percent of Rated Peak Reverse Voltage (%)<br>Peak Forward Surge Current (A)<br>A)<br>�<br>Instantaneous Reverse Current (<br>**----- End of picture text -----**<br>


**Figure 2. Maximum Non-repetitive Peak Forward Surge Current** 

**Figure 4. Typical Reverse Characteristics** 

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14<br>ES1F−G Tj = 25 ° C<br>12 f = 1.0 MHz<br>Vsig = 50 mVp−p<br>10<br>8.0 ES1H−J<br>6.0<br>4.0<br>2.0<br>0<br>0 1 10 100<br>Reverse Voltage (V)<br>Junction Capacitance (pF)<br>**----- End of picture text -----**<br>


**Figure 5. Typical Junction Capacitance** 

**www.onsemi.com** 

**2** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**SMA** CASE 403AE ISSUE O 

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DATE 31 AUG 2016<br>5.60<br>B B 0.13 M C B A<br>4.80<br>2.65<br>2.95 1.65<br>B  1.75<br>2.50 1.20<br>4.30<br>4.75<br>A B<br>(oiLA 4.00 s Eeetoo<br>LAND PATTERN RECOMMENDATION<br>TOP VIEW<br> 2.50 MAX<br>A<br>—<br>2.20<br>NOTES:<br>1.90<br>  A.   EXCEPT WHERE NOTED, CONFORMS<br>         TO JEDEC DO214 VARIATION AC.<br>0.203 0.30 B DOES NOT COMPLY JEDEC STANDARD<br>B 0.050 0.05         VALUE.<br>C   C.   ALL DIMENSIONS ARE IN MILLIMETERS.<br>2.05 0.13 M C B A   D.  DIMENSIONS ARE EXCLUSIVE OF<br>1.95 A Se| coOO} | | n         BURRS, MOLD FLASH AND TIE BAR<br>        PROTRUSIONS.<br>SIDE VIEW<br>  E.  DIMENSIONS AND TOLERANCE AS<br>       PER ASME Y14.5−2009.<br>8 °   E.  LAND PATTERN STD. DIOM5025X231M<br>0 °<br> R0.15 4X<br>+f<br>GAGE PLANE<br>0.45<br>0.41<br>0.15<br>TAL<br>1.52<br>8 ° 0.75<br>0 °<br>ait<br>DETAIL A<br>SCALE 20 : 1<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON13440G Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: SMA PAGE 1 OF 1<br>ee<br>ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br>


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© Semiconductor Components Industries, LLC, 2019 

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