ES1D-TP
FAST RECOVERY, 1A, 200V, DO-214AC
- Manufacturer: MICRO COMMERCIAL COMPONENTS
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- No. of Pins: 2 Pin
- Diode Case Style: DO-214AC (SMA)
- Diode Configuration: Single
- Forward Voltage Max: 975mV
- Forward Surge Current: 30A
- Reverse Recovery Time: 50ns
- Average Forward Current: 1A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 0.105 € |
| Current stock | 10+ |
| Lead time | 30 days |
## _M C C_ **==> picture [441 x 92] intentionally omitted <==** **----- Start of picture text -----**<br> ES1A<br>TM<br>������������������omponents<br>Micro Commercial Components 20736 Marilla Street Chatsworth THRU<br>��������<br>ES1M<br>���������������������<br>���������������������<br>**----- End of picture text -----**<br> **1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts** ## Features - Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 - � High Temp Soldering: 260�C for 10 Seconds At Terminals - Superfast Recovery Times For High Efficiency ## Maximum Ratings **==> picture [499 x 443] intentionally omitted <==** **----- Start of picture text -----**<br> � Operating Temperature: -50�C to +150�C<br>� Storage Temperature: -50�C to +150�C DO-214AC<br>� Maximum Thermal Resistance; 15�C/W Junction To Lead (HSMA) (High Profile)<br>MCC Maximum Maximum Maximum H<br>Part Device Recurrent RMS DC Cathode Band<br>Number Marking Peak Reverse Voltage Blocking<br>Voltage Voltage<br>ES1A ES1A 50V 35V 50V J<br>ES1B ES1B 100V 70V 100V<br>ES1C ES1C 150V 105V 150V<br>ES1D ES1D 200V 140V 200V<br>ES1G ES1G 400V 280V 400V A C<br>ES1J ES1J 600V 420V 600V<br>ES1K ES1K 800V 560V 800V E D<br>B<br>ES1M ES1M 1000V 700V 1000V F<br>Electrical Characteristics @ 25�C Unless Otherwise Specified @ 25�C Unless Otherwise Specified 25�C Unless Otherwise Specified �C Unless Otherwise Specified C Unless Otherwise Specified pecified ecified G<br>Average Forward IF(AV) 1.0A Ta = 75�C DIMENSIONS<br>Current<br>Peak Forward Surge IFSM 30A 8.3ms, half sine DIM INCHESMIN MAX MINMM MAX NOTE<br>Current A .078 .116 1.98 2.95<br>B .067 .089 1.70 2.25<br>Maximum C .002 .008 .05 .20<br>Instantaneous DE .035--- .055.02 .---89 1.4.510<br>Forward Voltage GF .205.065 ..224096 5.211.65 2.45.695<br>ES1A-D VF .975V IFM = 1.0A; H .160 .180 4.06 4.57<br>J .100 .112 2.57 2.84<br>ES1G- J 1.35V TJ = 25�C*<br>ES1 K~M 1. 7 0V<br>Maximum DC SUGGESTED SOLDER<br>Reverse Current At IR 5�A TJ = 25�C PAD LAYOUT<br>Rated DC Blocking 100�A TJ = 100�C 0.090”<br>Voltage<br>Maximum Reverse<br>Recovery Time 0.085”<br>ES1A-D Trr 50ns IF=0.5A, IR=1.0A,<br>ES1G-K 75 ns Irr=0.25A<br>ES1M 100ns<br>Typical Junction CJ 45pF Measured at 0.070”<br>Capacitance 1.0MHz, VR=4.0V<br>**----- End of picture text -----**<br> ## Electrical Characteristics @ 25�C Unless Otherwise Specified @ 25�C Unless Otherwise Specified 25�C Unless Otherwise Specified �C Unless Otherwise Specified C Unless Otherwise Specified pecified ecified *Pulse test: Pulse width 200 �sec, Duty cycle 2% ## _www.mccsemi.com_ Revision: 7 200 **1 of 4** 7 /0 6 /1 9 TM ## ES1A thru ES1M ## _M C C_ **==> picture [177 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 1<br>Typical Forward Characteristics<br>50<br>ES1A~ES1D<br>10 ES1G~ES1 J<br>3.0<br>ES1K~ES1M<br>1.0<br>0.1<br> .01<br>.6 .8 1.0 1.2 1.4 1.6 1.8 2.0<br>FORWARD VOLTAGE,(V)<br>INSTANTANEOUS FORWARD CURRENT,(A)<br>**----- End of picture text -----**<br> ## **Micro Commercial Components** Figure 2 Forward Derating Curve **==> picture [226 x 220] intentionally omitted <==** **----- Start of picture text -----**<br> 2.4<br>2.2<br>2.0<br>1.8<br>1.6<br>1.4<br>1.2<br>Amps<br>1.0<br>.8<br>.6<br>.4<br>Single Phase, Half Wave<br>.2 60Hz Resistive or Inductive Load<br>0<br>0 25 50 75 100 125 150<br>°C<br>Average Forward Rectified Current - Amperes versus<br>Ambient Temperature -°C<br>**----- End of picture text -----**<br> Instantaneous Forward Current - Amperes _versus_ Instantaneous Forward Voltage - Volts **==> picture [389 x 220] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 3<br>Junction Capacitance<br>100<br>60<br>40<br>20<br>pF TJ=25°C;f=1MHZ<br>10<br>6<br>4<br>2<br>1<br>.1 .2 .4 1 2 4 10 20 40 100 200 400 1000<br>Volts<br>Junction Capacitance - pF versus<br>Reverse Voltage - Volts<br>**----- End of picture text -----**<br> ## _www.mccsemi.com_ Revision: 7 2007/06/19 **2 of 4** **==> picture [110 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> M C C<br>**----- End of picture text -----**<br> ## ES1A thru ES1M **==> picture [223 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 4<br>Peak Forward Surge Current<br>30<br>25<br>20<br>15<br>Amps<br>10<br>5<br>0<br>1 2 4 6 8 10 20 40 60 80 100<br>Cycles<br>**----- End of picture text -----**<br> **==> picture [163 x 18] intentionally omitted <==** **----- Start of picture text -----**<br> Peak Forward Surge Current - Amperes versus<br>Number Of Cycles At 60Hz - Cycles<br>**----- End of picture text -----**<br> **==> picture [145 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> TM<br>**----- End of picture text -----**<br> ## **Micro Commercial Components** **==> picture [209 x 223] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 5<br>Typical Reverse Characteristics<br>100<br>T = 100j °C<br>10<br>1.0<br>T = 25j °C<br>0.1<br>0 40 80 120<br>**----- End of picture text -----**<br> PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Figure 6 Reverse Recovery Time Characteristic And Test Circuit Diagram **==> picture [283 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 50Ω 10Ω<br>Pulse<br>25Vdc Generator<br>Note 2<br>1Ω Oscilloscope<br>Note 1<br>Notes:<br>1. Rise Time = 7ns max.<br>Input impedance = 1 megohm, 22pF<br>2. Rise Time = 10ns max.<br>Source impedance = 50 ohms<br>**----- End of picture text -----**<br> **==> picture [154 x 133] intentionally omitted <==** **----- Start of picture text -----**<br> trr<br>+0.5A<br>0<br>-0.25<br>-1.0<br>1cm<br>Set Time Base for 20/100ns/cm<br>**----- End of picture text -----**<br> 3. Resistors are non-inductive **==> picture [91 x 85] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 7<br>New SMA Assembly<br>Round Lead<br>Process<br>**----- End of picture text -----**<br> ## _www.mccsemi.com_ **3 of 4** Revision: 7 2007/06/19 ## _M C C_ **==> picture [144 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> TM<br>**----- End of picture text -----**<br> ## **Micro Commercial Components** ## *****IMPORTANT NOTICE***** _**Micro Commercial Components Corp .**_ reserves the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . _**Micro Commercial Components Corp .**_ does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold _**Micro Commercial Components Corp .**_ and all the companies whose products are represented on our website, harmless against all damages. ## *****APPLICATIONS DISCLAIMER***** Products offer by _**Micro Commercial Components Corp .**_ are not intended for use in Medical, Aerospace or Military Applications. ## _www.mccsemi.com_ **4 of 4** Revision: 7 2007/06/19
Updated at February 9, 2023
Headquartered in the United States, Micro Commercial Components (MCC) is an established leader in the discrete semiconductor market. Leveraging vertical integration and an in-house wafer foundry, the company delivers high-quality, cost-effective components with competitive lead times. MCC's robust manufacturing capabilities allow them to support a wide array of demanding applications across the industrial, automotive, and consumer electronics sectors. The core of our MCC portfolio centers on a comprehensive selection of reliable diodes and rectifiers. This encompasses a strong variety of Zener single diodes designed for precise voltage regulation, alongside standard recovery, fast, and ultrafast rectifier diodes for efficient power management. Furthermore, MCC's small signal and Schottky diodes provide versatile, high-performance solutions for high-speed switching and applications requiring low forward voltage drops. Complementing their diode technologies, MCC manufactures a dependable lineup of bipolar transistors, as well as single and dual MOSFETs suited for diverse amplification and power switching tasks. By maintaining rigorous quality standards and a commitment to continuous process improvement, MCC remains a trusted partner for engineers seeking robust discrete semiconductors that enhance overall system reliability and performance.
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