Illustrative purposes only
EMX1DXV6T1G
Bipolar Transistor Array, Dual NPN, 50 V, 100 mA, 357 mW, 120 hFE, SOT-563
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar Junction Transistor Arrays - BJT
- Product variants: No other variants available. No other names.
- No. of Pins: 6Pins
- DC Current Gain hFE: 120hFE
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual NPN
- DC Collector Current: 100mA
- Power Dissipation Pd: 357mW
- Power Dissipation NPN: 357mW
- Transistor Case Style: SOT-563
- Transition Frequency NPN: 180MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: 120hFE
- Continuous Collector Current NPN: 100mA
- Collector Emitter Voltage Max NPN: 50V
- Collector Emitter Voltage V(br)ceo: 50V
| Delivery and price | |
|---|---|
| Units per pack | 4000 |
| Price | 0.082 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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