EML22T2R
Bipolar (BJT) Single Transistor, NPN, 50 V, 150 mA, 120 mW, SOT-563, Surface Mount
- Manufacturer: ROHM
- Product type:
- SVHC: To Be Advised
- No. of Pins: 6Pins
- Product Range: -
- Qualification: -
- Power Dissipation: 120mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 180MHz
- Transistor Case Style: SOT-563
- DC Current Gain hFE Min: 120hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 150mA
- Collector Emitter Voltage Max: 50V
| Delivery and price | |
|---|---|
| Units per pack | 8000 |
| Price | 0.059 € |
| Current stock | 10+ |
| Lead time | 30 days |
## Data Sheet oo os POWER SUPPLY MONITOR DEVICES ## **EML22/UML23N** ## **Features** - 1) Packaging Zener diode and small-signal amplifier transistor - 2) Using outside connection able to use Power supply monitor device - 3) When use Power supply monitor device, - Temparature drift characteristics of detect voltage is about 150 ppm/ºC. ## **Applications** Protection of over load of power supply. **Packaging specifications and Marking** |Type<br>~~===~~|EML22<br>~~===~~|UML23N<br>~~===~~| |---|---|---| |Package<br>~~===~~|EMT6<br>~~===~~|UMT6<br>~~===~~| |Marking<br>~~===~~|L22<br>~~===~~|L23<br>~~===~~| |Code<br>~~===~~|T2R<br>~~===~~|TR<br>~~===~~| |Basic orderingunit(pieces)<br>~~===~~|8000<br>~~===~~|3000<br>~~===~~| ## **Dimensions** (Unit : mm) **==> picture [116 x 223] intentionally omitted <==** **----- Start of picture text -----**<br> EMT6<br>(6) (5) (4)<br>a<br>(1) (2) (3)<br>o22|| O13.<br>MARKING : "L22"(EMT6)<br>UMT6<br>(SC-88)<br><SOT-363><br>(6) (5) (4)<br>(1) (2) (3)<br>MARKING : "L23"(UMT6)<br>**----- End of picture text -----**<br> ## **Absolute maximum ratings** (Ta=25°C) ## **Internal circuit** ## **Tr** |**Tr**|||| |---|---|---|---| |Parameter|Symbol|Limits|Unit| |Collector-base voltage|VCBO|60|V| |Collector-emitter voltage|VCEO|50|V| |Emitter-base voltage|VEBO|7|V| |Collector current|IC|150|mA| |Power dissipation|PD<br>*1|120|mW| **==> picture [149 x 75] intentionally omitted <==** **----- Start of picture text -----**<br> (6) (5) (4) (1) ANODE《DI》<br>(2) BASE《TR》<br>(3) EMITTER《TR》<br>(4) COLLECTOR《TR》<br>(5) N.C.<br>(1) (2) (3) (6) CATHODE《DI》<br>**----- End of picture text -----**<br> |**Di**|||| |---|---|---|---| |Symbol<br>Limits<br>Unit<br>PD<br>120<br>mW<br>Power dissipation<br>Parameter<br>*1<br>~~+}~~<br>~~—}—~~|||| |**Tr and Di**|||| |Parameter|Symbol|Limits|Unit| |Power dissipation|PD<br>*1|150|mW| |Junction temperature|Tj|150|°C| |Range of storage temperature|Tstg|55 to150|°C| *1 Mounted on reference land. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.10 - Rev.A** 1/4 Data Sheet **EML22/UML23N** ## **Electrical characteristics** (Ta = 25°C) **Tr** |**Tr**||||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |Collector-emitter brekdown voltage|BVCEO|50|－|－|V|IC=1ｍA| |Collector-base breakdown voltage|BVCBO|60|－|－|V|IC=50μA| |Emitter-base breakdown voltage|BVEBO|7|－|－|V|IE=50μA| |Collector cut-off current|ICBO|－|－|100|nA|VCB=60V| |Emitter cut-off current|IEBO|－|－|100|nA|VEB=7V| |Collector-emitter saturation voltage|VCE(sat)|－|－|400|mV|IC/IB=50mA/5mA| |DC current gain|hFE|120|－|390|－|VCE=6V,IC=1mA| |Transition frequency|fT|－|180|－|MHz|VCE=12V,IE=2mA,<br>f=100MHｚ| |Output capacitance|Cob|－|2|－|pF|VCB=12V,IE=0A,<br>f=1MHｚ| |**Di**|**Di**|**Di**|**Di**|**Di**|**Di**|**Di**| |---|---|---|---|---|---|---| |Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions| |Zener voltage|VZ|6.58|6.80|7.00|V|IZ=5mA| |Reverse current|IR|－|－|0.5|mA|VR=3.5V| www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.10 - Rev.A** 2/4 Data Sheet **EML22/UML23N** ## **Electrical characteristic curves** ## <Tr> **==> picture [484 x 568] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100 0.50mA 14 50mA<br>VCE=6V 0.45mA 12 45mA<br>0.40mA<br>80 0.35mA 40mA<br>10 0.30mA 0.25mA 10 35mA<br>Ta=125℃ 60 8 30mA<br>Ta= 75℃ 0.20mA 25mA<br>Ta= 25Ta= -25℃ ℃ 40 0.15mA 6 20mA<br>1 0.10mA 4 15mA<br>20 10mA<br>0.05mA<br>2 5mA<br>0.1 0 IB=0A 0 IB=0A<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 2 0 2 4 6 8 10 12 14 16 18 20<br>BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)<br>Fig. 1 GROUNDED EMITTER PROPAGATION Fig. 2 GROUNDED EMITTER OUTPUT Fig. 3 GROUNDED EMITTER OUTPUT<br> CHARACTERISTICS CHARACTERISTICS ( Ⅰ ) CHARACTERISTICS ( Ⅱ )<br>1000 1000 1<br>Ta=25ºC VCE=6V Ta=25ºC<br>IC/IB=50<br> 20<br>VCE=6V 10<br>100 3V 100 Ta=125℃ 0.1<br> 1V<br>Ta= 75℃<br>Ta= 25℃<br>Ta= -25℃<br>10 10 0.01<br>0.1 1 10 100 1000 0.1 1 10 100 1000 0.1 1 10 100 1000<br>COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)<br>Fig.4 DC CURRENT GAIN vs. COLLECTOR Fig. 5 DC CURRENT GAIN vs. COLLECTOR Fig. 6 COLLECTOR SATURATION VOLTAGE vs.<br> CURRENT CHARACTERISTICS ( Ⅰ ) CURRENT CHARACTERISTICS ( Ⅱ ) COLLECTOR CURRENT CHARACTERISTICS( Ⅰ )<br>1 1<br>IC/IB=10 IC/IB=50<br>Ta=125℃<br>Ta= 75℃<br>Ta=125℃ Ta= 25℃<br>Ta= 75℃ Ta= -25℃<br>Ta= 25℃<br>Ta= -25℃<br>0.1 0.1<br>0.01 0.01<br>0.1 1 10 100 1000 0.1 1 10 100<br>COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)<br>Fig. 7 COLLECTOR SATURATION VOLTAGE vs. Fig. 8 COLLECTOR SATURATION VOLTAGE vs.<br> COLLECTOR CURRENT CHARACTERISTICS( Ⅱ ) COLLECTOR CURRENT CHARACTERISTICS( Ⅲ )<br>COLLECTOR CURRENT : I (mA) C COLLECTOR CURRENT : I (mA) C COLLECTOR CURRENT : I (mA) C<br> (V)<br>CE(sat)<br>FE FE<br>DC CURRENT GAIN : h DC CURRENT GAIN : h<br>COLLECTOR SATURATION VOLTAGE : V<br> (V) (V)<br>CE(sat) CE(sat)<br>COLLECTOR SATURATION VOLTAGE : V COLLECTOR SATURATION VOLTAGE : V<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.10 - Rev.A** 3/4 Data Sheet **EML22/UML23N** **==> picture [308 x 160] intentionally omitted <==** **==> picture [20 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> <Di><br>**----- End of picture text -----**<br> **==> picture [465 x 154] intentionally omitted <==** **==> picture [146 x 151] intentionally omitted <==** **==> picture [318 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> <Tr+Di> Measurement circuits<br>7.8<br>VCE = 2V 2V<br>IC=10mA<br>7.6 I<br>C<br>7.4<br>VREF<br>7.2 Temperature<br>Coefficient : 155ppm/℃<br>7<br>GND<br>6.8<br>-50 -25 0 25 50 75 100 125<br>Temperature : Ta(ºC)<br>Fig.16 Reference Voltage vs Temperature Fig 17 Reference Voltage vs Temperature<br> Characteristics Characteristics Mesurement CIrcuit<br> (V)<br>REF<br>Reference Voltage : V<br>**----- End of picture text -----**<br> www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. **2011.10 - Rev.A** 4/4 Notice ## N o t e s Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ## ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
Updated at April 25, 2026
Founded with a steadfast commitment to a "Quality First" corporate policy, ROHM is a globally recognized leader in the design and manufacture of semiconductors and electronic components. Originally named for its foundational product, resistors, combined with the unit of resistance, the "R" in ROHM has evolved to represent the brand's enduring dedication to reliability. Today, the company is renowned for driving technological advancement and supplying high-performance, dependable solutions to engineers worldwide. The company's engineering excellence is most prominently showcased in its expansive portfolio of discrete semiconductors. ROHM provides an industry-leading selection of bipolar transistors, alongside a massive array of Zener single diodes, Schottky diodes, and small signal diodes. Engineered for rigorous efficiency and compact footprint requirements, these foundational components are critical for modern power management, precise signal processing, and high-speed switching applications. In addition to its core discrete offerings, ROHM delivers advanced power control and circuit protection solutions. This includes a highly trusted lineup of single and dual MOSFETs, single IGBTs, and transient voltage suppressors (TVS diodes) designed to safeguard sensitive circuitry. Complemented by intelligent power modules, precision sensors, and specialized ICs, ROHM equips designers with the premium components necessary to build the next generation of robust electronic infrastructure.
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