EM6K34T2CR

## 0.9V Drive Nch + Nch MOSFET 

## **EM6K34** 

##  **Structure** 

Silicon N-channel MOSFET 

##  **Features** 

1) High speed switing. 

2) Small package(EMT6). 

3)Ultra low voltage drive(0.9V drive). 

##  **Dimensions** (Unit : mm) 

**==> picture [108 x 89] intentionally omitted <==**

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EMT6<br>SOT-563<br>ry a<br>(6) (5) (4)<br>Le L<br>(1) (2) (3)<br>0.22 | | 0 .13I L<br>Abbreviated symbol : K34<br>**----- End of picture text -----**<br>


##  **Application** 

Switching 

##  **Inner circuit** 

##  **Packaging specifications** 

|Type|Package<br>Code|Taping<br>T2R|
|---|---|---|
||Code<br>Basic orderinunit(pieces)|T2R<br>8000|
||Basic orderingunit(pieces)|8000|
|EM6K34|||



##  **Absolute maximum ratings** (Ta = 25C) 

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**----- Start of picture text -----**<br>
(6) (5) (4)<br>∗ 1<br>∗ 2<br>∗ 2<br>∗ 1 (1) Tr1 Source(2) Tr1 Gate<br>(3) Tr2 Drain<br>(1) (2) (3) (4) Tr2 Source<br>∗ 1 ESD PROTECTION DIODE (5) Tr2 Gate<br>∗ 2 BODY DIODE (6) Tr1 Drain<br>**----- End of picture text -----**<br>


<It is the same ratings for Tr1 and Tr2.> 

|**Absolute maximum ratings**(Ta = 25C)a = 25C)= 25C)C)C)<br><It is the same ratings for Tr1 and Tr2.>gs for Tr1 and Tr2.>s for Tr1 and Tr2.>|**Absolute maximum ratings**(Ta = 25C)a = 25C)= 25C)C)C)<br><It is the same ratings for Tr1 and Tr2.>gs for Tr1 and Tr2.>s for Tr1 and Tr2.>|(Ta = 25C)a = 25C)= 25C)C)C)|||
|---|---|---|---|---|
|Parameter||Symbol<br>~~a~~|Limits<br>~~a~~|Unit|
|Drain-source voltage||VDSS<br>~~a~~|50<br>~~a~~|V|
|Gate-source voltage||VGSS<br>~~ee~~<br>~~ee~~|8<br>~~ee~~<br>~~ee~~|V<br>~~ee~~|
|Drain current|Continuous<br>~~ee~~|ID<br>~~ee~~<br>~~ee~~<br>~~ee~~|200<br>~~ee~~<br>~~ee~~<br>~~ee~~|mA<br>~~ee~~<br>~~ee~~|
||Pulsed<br>~~ee~~|IDP<br>*1<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|800<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|mA<br>~~ee~~<br>~~ee~~|
|Source current<br>(Body Diode)|Continuous<br>~~ee~~|Is<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|125<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|mA<br>~~ee~~<br>~~ee~~|
||Pulsed<br>~~ee~~|Isp<br>*1<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>|800<br>~~ee~~<br>~~ee~~<br>~~ee~~<br>~~—~~|mA<br>~~ee~~|
|Power dissipation||PD<br>*2<br>~~ee~~<br>~~|;~~|150<br>~~ee~~<br>~~|;—~~|mW / TOTAL<br>~~ee~~|
||||120<br>~~|;—~~<br>~~|~~|mW / ELEMENT<br>~~|~~|
|Channel temperature||Tch<br><br>~~a~~|150<br>~~—~~<br>~~a~~|C|
|Range of storage temperature||Tstg<br>~~a~~|55 to +150<br>~~a~~|C|



*1 Pw10s, Duty cycle1% 

*2 Each terminal mounted on a recommended land. 

##  **Thermal resistance** 

|**Thermal resistance**||||
|---|---|---|---|
|Parameter|Symbol|Limits|Unit|
|Channel to Ambient|Rth (ch-a)<br>*|833|C/ W /TOTAL|
|||1042|C/ W /ELEMENT|



- Each terminal mounted on a recommended land. 

www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 

**2010.11 -  Rev.A** 

1/5 

Data Sheet 

**EM6K34** 

##  **Electrical characteristics** (Ta = 25C) 

<It is the same ratings for Tr1 and Tr2.> 

|Parameter|Symbol|Min.|Typ.|Max.|Unit|Conditions|
|---|---|---|---|---|---|---|
|Gate-source leakage|IGSS|-|-|10|A|VGS=8V, VDS=0V|
|Drain-source breakdown voltage|V(BR)DSS|50|-|-|V|ID=1mA, VGS=0V|
|Zerogate voltage drain current|IDSS|-|-|1|A|VDS=50V, VGS=0V|
|Gate threshold voltage|VGS(th)|0.3|-|0.8|V|VDS=10V, ID=1mA|
|Forward transfer admittance<br>Input capacitance<br>Static drain-source on-state<br>resistance|-<br>1.6<br>2.2<br>-<br>1.7<br>2.4<br>-<br>2.0<br>2.8<br>-<br>2.2<br>3.3<br>-<br>3.0<br>9.0<br>l Yfsl<br>0.2<br>-<br>-<br>S<br>Ciss<br>-<br>26<br>-<br>pF<br>RDS (on)<br><br>*<br>*<br>~~fee!~~|||||ID=200mA, VGS=4.5V<br>ID=200mA, VGS=2.5V<br>ID=200mA, VGS=1.5V<br>ID=100mA, VGS=1.2V<br>ID=10mA, VGS=0.9V<br>ID=200mA, VDS=10V<br>VDS=10V|
|Output capacitance|Coss|-|6|-|pF|VGS=0V|
|Reverse transfer capacitance|Crss|-|3|-|pF|f=1MHz|
|Turn-on delaytime|td(on)<br>*****|-|5|-|ns|ID=100mA, VDD 25V|
|Rise time|tr<br>*****|-|8|-|ns|VGS=4.5V|
|Turn-off delaytime|td(off)<br>*****|-|17|-|ns|RL=250|
|Fall time|tf<br>*****|-|43|-|ns|RG=10|



*Pulsed 

##  **Body diode characteristics** (Source-Drain) (Ta = 25C) 

|Parameter<br>~~ee~~|Symbol<br>~~ee~~|Min.<br>~~ee~~|Typ.<br>~~ee~~|Max.<br>~~ee~~|Unit<br>~~ee~~|Conditions<br>~~ee~~|
|---|---|---|---|---|---|---|
|Forward Voltage<br>~~ee~~|VSD<br>*<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|1.2<br>~~ee~~|V<br>~~ee~~|Is=200mA, VGS=0V<br>~~ee~~|



*Pulsed 

www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 

**2010.11-  Rev.A** 

2/5 

Data Sheet 

## **EMK6K34** 

##  **Electrical characteristics curves** 

**==> picture [467 x 565] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.2 0.2 1<br>VGS= 4.5V VDS= 10V<br>VGS= 2.5V Pulsed<br>0.15 a V GS = 4.5V ee 0.15 V GS = 1.5V LASS Ta= 125C<br>VGS= 2.5V VGS= 1.2V 0.1 Ta= 75C<br>0.1 V GS = 0.9V VVGSGS= 1.5V= 1.2V 0.1 VGS= 0.9V = Ta T = a= 25  25   C C<br>0.05 VGS= 0.8V Ta=25C 0.05 VGS= 0.8V TPulseda=25C 0.01<br>Pulsed |<br>VGS= 0.7V VGS= 0.7V<br>0 |Ze ee 0 0.001 e ee/asee<br>0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1<br>DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V] GATE-SOURCE VOLTAGE : VGS[V]<br>Fig.1 Typical Output Characteristics( Ⅰ) Fig.2 Typical Output Characteristics( Ⅱ) Fig.3  Typical Transfer Characteristics<br>10000 10000 10000<br>Ta= 25C V GS = 4.5V VGS= 2.5V<br>Pulsed Pulsed Pulsed<br>1000 VGS= 0.9V 1000 1000 Ta= 125C<br>TESS VV VVGSGSGSGS = 1.2V= 1.5V = 2.5V= 4.5V dl FHS T TTTa aa a = 125 = 75= 25= 25CC   C C | Ft TT Taaa == 25 =  75  25 CC C<br>100 mui ll 100 rf 100 FALE<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A]<br>Fig.4  Static Drain-Source On-State Fig.5  Static Drain-Source On-State Fig.6  Static Drain-Source On-State<br>           Resistance vs. Drain Current( Ⅰ)            Resistance vs. Drain Current( Ⅱ)            Resistance vs. Drain Current( Ⅲ)<br>10000 10000 10000<br>VGS= 1.5V VGS= 1.2V VGS= 0.9V<br>Pulsed Pulsed Pulsed<br>1000 peAEN TTTTa aa a= 125= 75= 2= 255CC  CC 1000 NT TTTa a a= 125= 75= 25  CCC __ Ill 1000 BEDINSS TTT Ta a aa= 125 = 75== 25 25CC   C C<br>PT PIN Ta= 25C nl PIE<br>100 BHiSSCo Coan 100 aerailA nilHT] 100 EEmAA [ES] EE<br>0.001 0.01 0.1 1 0.001 0.01 0.1 1 0.001 0.01 0.1 1<br>DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A] DRAIN-CURRENT : ID[A]<br>Fig.7  Static Drain-Source On-State Fig.8  Static Drain-Source On-State Fig.9  Static Drain-Source On-State<br>           Resistance vs. Drain Current( Ⅳ)            Resistance vs. Drain Current( Ⅴ)            Resistance vs. Drain Current( Ⅵ)<br>DRAIN CURRENT : I[A]D DRAIN CURRENT : I[A]D DRAIN CURRENT : I[A]D<br>] ] ]<br>)[m )[m )[m<br>(DSon (DSon (DSon<br>RESISTANCE : R RESISTANCE : R RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE<br>] ] ]<br>)[m )[m )[m<br>(DSon (DSon (DSon<br>RESISTANCE : R RESISTANCE : R RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE STATIC DRAIN-SOURCE ON-STATE<br>**----- End of picture text -----**<br>


www.rohm.com 

**2010.11 -  Rev.A** 

3/5 

©2010 ROHM Co., Ltd. All rights reserved. 

Data Sheet 

**EM6K34** 

**==> picture [454 x 379] intentionally omitted <==**

**----- Start of picture text -----**<br>
10 1 5000<br>VDS= 10V EEE (eo VGS=0V T a =25C<br>ae Pulsed | Pulsed EREEREREES 4000 | Pulsed<br>ae Fe 3000 fo ID= 0.01A eeoe<br>1 0.1 I D = 0.20A<br>2000<br>| T a = 25C TTT T a = 125C L<br>Ia TTaa=25=75CC AN TTaa= 75= 25  CC 1000 |<br>Ta=125C Ta= 25C<br>0.1 Zan | 0.01 il 0 ooeeeeeP| fT tT TT<br>0.01 0.1 1 0 0.5 1 1.5 0 1 2 3 4 5 6 7 8<br>DRAIN-CURRENT : ID[A] SOURCE-DRAIN VOLTAGE : VSD [V] GATE-SOURCE VOLTAGE : VGS[V]<br>Fig.10 Forward Transfer Admittance Fig.11  Reverse Drain Current Fig.12  Static Drain-Source On-State<br>          vs. Drain Current           vs. Sourse-Drain Voltage              Resistance vs. Gate Source Voltage<br>1000 1000<br>Ta=25C 4 Ta=25C<br>td(off) VDD=25V f=1MHz<br>tf V GS =4.5V V GS =0V<br>100 RG=10 3 100 Ciss<br>2<br>10 |i | TVaDD=25=25VC 10 SrI TTI<br>1 I D = 0.2A C rss<br>t d(on) t r RG=10 Coss<br>1 et 0 Pulsed 1 Frail Fel CI<br>0.01 0.1 1 0 0.5 1 1.5 0.01 0.1 1 10 100<br>DRAIN-CURRENT : ID[A] TOTAL GATE CHARGE : Qg  [nC] DRAIN-SOURCE VOLTAGE : VDS[V]<br>Fig.13  Switching Characteristics Fig.14  Typical Capacitance Fig.15  Typical Capacitance<br>             vs. Drain-Source Voltage              vs. Drain-Source Voltage<br> [A]s ])[m<br>(ONDS<br>SOURCE CURRENT : I<br>RESISTANCE : R<br>STATIC DRAIN-SOURCE ON-STATE<br>FORWARD TRANSFER  ADMITTANCE : |Yfs| [S]<br> [V]<br>GS<br>SWITCHING TIME : t [ns] GATE-SOURCE VOLTAGE : V CAPACITANCE : C [pF]<br>**----- End of picture text -----**<br>


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**2010.11-  Rev.A** 

4/5 

©2010 ROHM Co., Ltd. All rights reserved. 

Data Sheet 

**EM6K34** 

 **Measurement circuits** 

**==> picture [310 x 112] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pulse width<br>VGS ID<br>VDS 50% 90% 50%<br>RL VGS 10%<br>VDS<br>D.U.T. 10% 10%<br>RG VDD 90% 90%<br>td(on) tr td(off) tf<br>AT ty ton toff<br>Fig.1-1  Switching time measurement circuit Fig.1-2  Switching waveforms<br>**----- End of picture text -----**<br>


##  **Notice** 

This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. 

www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 

**2010.11-  Rev.A** 

5/5 

Notice 

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