EGP20G
Fast / Ultrafast Diode, 400 V, 2 A, Single, 1.25 V, 75 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 2 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: DO-15 (DO-204AC)
- Diode Configuration: Single
- Forward Voltage Max: 1.25V
- Forward Surge Current: 75A
- Reverse Recovery Time: -
- Average Forward Current: 2A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 400V
| Delivery and price | |
|---|---|
| Units per pack | 4000 |
| Price | 0.195 € |
| Current stock | 10+ |
| Lead time | 30 days |
**DATA SHEET** ~~ee~~ **www.onsemi.com** ## Rectifiers, High Efficiency, ## EGP20A - EGP20K ## **Features** ## **AXIAL LEAD DO 204 CASE 017AJ** - Glass−Passivated Cavity−Free Junction - High Surge Current Capability ## **MARKING DIAGRAM** - Low Leakage Current - Super−Fast Recovery Time for High Efficiency - Low Forward Voltage, High Current Capability **ABSOLUTE MAXIMUM RATINGS** (TA = 25C unless otherwise noted) |**ABSOLUTE MAXIMUM RATINGS**|**ABSOLUTE MAXIMUM RATINGS** (TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)| |---|---|---|---| |**Symbol**|**Parameter**|**Value**|**Unit**| |IF(AV)|Average Rectified Current<br>0.375 inch lead length at TA= 55C|2.0|A| |IFSM|Peak Forward Surge Current<br>8.3 ms single half−sine−wave<br>Superimposed on rated load<br>(JEDEC method)|75|A| |TJ, TSTG|Junction and Storage Temperature Range|−65 to 150|C| **==> picture [160 x 85] intentionally omitted <==** **----- Start of picture text -----**<br> EGP20X<br>ZYWW<br>EGP20X = Specific Device Code<br>X = A/B/C/D/F/G/J/K<br>Z = Assembly Code<br>YWW = Date Code (Year & Week)<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** See detailed ordering and shipping information on page 3 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **THERMAL CHARACTERISTICS** |**Symbol**<br>~~a~~|**Parameter**|**Value**|**Unit**| |---|---|---|---| |PD<br>~~a~~|Total Device Dissipation|3.13|W| |~~a~~|Derate above 25C|25|mWC| |R JA|Thermal Resistance, Junction to Ambient|40|C/W| |R JL|Thermal Resistance, Junction to Lead|15|C/W| **ELECTRICAL CHARACTERISTICS** (TA = 25C unless otherwise noted) |**Parameter**<br>~~eee~~|**Parameter**<br>~~eee~~|**Device**<br>~~eee~~|**Device**<br>~~eee~~|**Device**<br>~~eee~~|**Device**<br>~~eee~~|**Device**<br>~~eee~~|**Device**<br>~~eee~~|**Device**<br>~~eee~~|**Device**<br>~~eee~~|**Unit**<br>~~eee~~| |---|---|---|---|---|---|---|---|---|---|---| |||**20A**<br>~~eee~~|**20B**<br>~~eee~~|**20C**<br>~~eee~~|**20D**<br>~~eee~~|**20F**<br>~~eee~~|**20G**<br>~~eee~~|**20J**<br>~~eee~~|**20K**<br>~~eee~~|| |Peak Repetitive Reverse Voltage||50|100|150|200|300|400|600|800|V| |Maximum RMS Voltage<br>~~po~~||35|70|105|140|210|280|420|560|V| |DC Reverse Voltage (Rated VR)<br>~~po~~||50|100|150|200|300|400|600|800|V| |Maximum Reverse<br>Current at Rated VR<br>~~po~~<br>~~a~~<br>~~ee~~|TA= 25 C<br>~~o~~|5.0||||||||A| ||TA= 125 C<br>~~ee ee~~|100<br>~~ee~~||||||||A| |Maximum Reverse Recovery Time<br>IF= 0.5 A, IR= 1.0 A, Irr= 0.25 A<br>~~ee ee~~||50<br>~~ee~~||||||75||nS| |Maximum Forward Voltage @ 2.0 A<br>~~ee ee~~<br>~~a~~<br>~~ee~~||0.95<br>~~ee~~<br>~~ee~~||||1.25<br>~~ee~~<br>~~ee~~||1.7<br>~~ee~~||V| |Typical Junction Capacitance<br>VR= 4.0 V, f = 1.0 MHz<br>~~ee~~||70<br>~~ee~~||||45<br>~~ee~~||||pF| Publication Order Number: **1** Semiconductor Components Industries, LLC, 2007 **October, 2022 − Rev. 2** **EGP20K/D** **EGP20A − EGP20K** ## **TYPICAL PERFORMANCE CHARACTERISTICS** **==> picture [241 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 3<br>2<br>Single Phase<br>Half Wave<br>60 Hz<br>1<br>Resistive or<br>Inductive LOAD<br>.375” (9.0 mm) LEAD<br>Lengths<br>0<br>0 25 50 75 100 125 150 175<br>Ambient Temperature ( � C)<br>Forward Current (A)<br>**----- End of picture text -----**<br> **Figure 1. Forward Current Derating Curve** **==> picture [231 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 90<br>75<br>60<br>45<br>30<br>15<br>0<br>1 2 5 10 20 50 100<br>Number of Cycles at 60 Hz<br>Peak Forward Surge Current (A)<br>**----- End of picture text -----**<br> **Figure 2. Non−Repetitive Surge Current** **==> picture [240 x 383] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>EGP20A−EGP20D<br>10<br>TA = 150C<br>TA = 25C<br>1<br>EGP20F−EGP20K<br>0.1<br>Pulse Width = 30 � s<br>2% Duty Cycle<br>0.01<br>0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8<br>Forward Voltage (V)<br>Figure 3. Forward Characteristics<br>140<br>120<br>100<br>80 EGP20A−EGP20D<br>60<br>40 EGP20F−EGP20K<br>20<br>0<br>0.1 1 10 100 1000<br>Reverse Voltage (V)<br>Forward Current (A)<br>Capacitance (pF)<br>**----- End of picture text -----**<br> **==> picture [233 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>TA = 150C<br>10<br>1 TA = 125C<br>0.1 TA = 75C<br>0.01<br>TA = 25C<br>0.001<br>0 20 40 60 80 100 120 140<br>Percent of Rated Peak Reverse Voltage (%)<br>A)<br>�<br>Reverse Current (<br>**----- End of picture text -----**<br> **Figure 4. Reverse Characteristics** **Figure 5. Junction Capacitance** **www.onsemi.com** **2** **EGP20A − EGP20K** ## **Reverse Recovery Time Characteristic and Test Circuit Diagram** **==> picture [220 x 121] intentionally omitted <==** **----- Start of picture text -----**<br> 50 � 50 �<br>Non−inductive Non−inductive<br>(−)<br>DUT<br>Pulse<br>+ 50 V<br>Generator<br>− (approx.)<br>(Note 2)<br>50 �<br>Non−inductive Oscilloscope (+)<br>(Note 1)<br>Notes:<br>**----- End of picture text -----**<br> 1. Rise time = 7.0 ns max; Input impedance = 1.0 M � 22 pF. 2. Rise time = 10 ns max; Source impedance = 50 � . **==> picture [173 x 144] intentionally omitted <==** **----- Start of picture text -----**<br> trr<br>+0.5 A<br>0<br>−0.25 A<br>−1 A<br>1 cm Set Time Base for<br>5/10 ns/cm<br>**----- End of picture text -----**<br> ## **Figure 6. Test Circuit Diagram** **Figure 7. Reverse Recovery Time Characteristics** ## **ORDERING INFORMATION** |**ORDERING INFORMATION**||| |---|---|---| |**Device**|**Package**|**Shipping**†| |EGP20A|Axial Lead / DO−204<br>(Pb−Free)|4000 / Tape & Reel| |EGP20B||| |EGP20C||| |EGP20D||| |EGP20F||| |EGP20G||| |EGP20J||| |EGP20K||| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **www.onsemi.com** **3** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **AXIAL LEAD DO 204** CASE 017AJ ISSUE O DATE 30 NOV 2016 **==> picture [34 x 49] intentionally omitted <==** **==> picture [148 x 57] intentionally omitted <==** Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON13437G** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: AXIAL LEAD DO 204 PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2016 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **==> picture [232 x 43] intentionally omitted <==**
Updated at June 8, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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