EFC8811R-TF

## **EFC8811R Power MOSFET for 1-Cell Lithium-ion Battery Protection** ~~—_~~ **12V, 3.2mΩ, 27A, Dual N-Channel** g www.onsemi.com This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-cell lithium-ion battery applications. 

www.onsemi.com VSSS RSS(on) Max IS Max 3.2mΩ@ 4.5V 3.2mΩ@ 4.0V 12V 3.2mΩ@ 3.8V 27A 4.4mΩ@ 3.1V 6.3mΩ@ 2.5V ~~is~~ **ELECTRICAL CONNECTION N-Channel** 

## **Features** 

- 2.5V drive 

- 2kV ESD HBM 

- Common-Drain Type 

- ESD Diode-Protected Gate 

- Pb-Free, Halogen Free and RoHS compliance 

## **Applications** 

 1-Cell Lithium-ion Battery Charging and Discharging Switch 

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4, 6<br>Rg<br>5<br>Rg 1 : Source1<br>2 2 : Gate1<br>3 : Source1<br>4 : Source2<br>5 : Gate2<br>Rg=200 Ω 1, 3 6 : Source2<br>**----- End of picture text -----**<br>


**SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS** at Ta = 25C (Note 1) Parameter Symbol Value Unit Source to Source Voltage VSSS 12 V Gate to Source Voltage VGSS 8 V Source Current (DC) IS 27 A Source Current (Pulse) PW100s, duty cycle1% ISP 100 A Total Dissipation Surface mounted on ceramic substrate PT 2.5 W 2 (5000mm  0.8mm) Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ~~ey~~ **THERMAL RESISTANCE RATINGS** Parameter Symbol Value Unit Junction to Ambient Surface mounted on ceramic substrate RJA 50 C/W 2 (5000mm  0.8mm) ~~ee~~ 

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

**CSP6, 1.77x3.54 / EFCP3517-6DGH-020** 

## **MARKING** 

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**ORDERING INFORMATION** See detailed ordering and shipping information on page 6 of this data sheet. 

**©** Semiconductor Components Industries, LLC, 2016 **March 2016 - Rev. 0** 

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Publication Order Number : 

**EFC8811R/D** 

**EFC8811R** 

## **ELECTRICAL CHARACTERISTICS** at Ta  25C (Note 2) 

|Parameter|Symbol|Conditions||Value||Unit|
|---|---|---|---|---|---|---|
||||min|typ|max||
|Source to Source Breakdown Voltage|V(BR)SSS|IS=1mA, VGS=0V<br>Test Circuit 1|12|||V|
|Zero-Gate Voltage Source Current|ISSS|VSS=10V, VGS=0V<br>Test Circuit 1|||1|A|
|Gate to Source Leakage Current|IGSS|VGS=8V, VSS=0V<br>Test Circuit 2|||1|A|
|Gate Threshold Voltage|VGS(th)|VSS=6V, IS=1mA<br>Test Circuit 3|0.5||1.3|V|
|Forward Transconductance|gFS|VSS=6V, IS=3A<br>Test Circuit 4||19||S|
|Static Source to Source On-State<br>Resistance|RSS(on)1|IS=5A, VGS=4.5V<br>Test Circuit 5|1.8|2.3|3.2|m|
||RSS(on)2|IS=5A, VGS=4.0V<br>Test Circuit 5|1.9|2.4|3.2|m|
||RSS(on)3|IS=5A, VGS=3.8V<br>Test Circuit 5|2.0|2.6|3.2|m|
||RSS(on)4|IS=5A, VGS=3.1V<br>Test Circuit 5|2.1|3.3|4.4|m|
||RSS(on)5|IS=5A, VGS=2.5V<br>Test Circuit 5|2.7|4.0|6.3|m|
|Turn-ON Delay Time|td(on)|VSS=6V, VGS=4.5V, IS=3ATest Circuit 6||80||ns|
|Rise Time|tr|||570||ns|
|Turn-OFF Delay Time|td(off)|||38,000||ns|
|Fall Time|tf|||17,700||ns|
|Total Gate Charge|Qg|VSS=6V, VGS=4.5V, IS=27ATest Circuit 7||100||nC|
|Forward Source to Source Voltage|VF(S-S)|IS=3A, VGS=0V<br>Test Circuit 8||0.75|1.2|V|



Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**EFC8811R** 

## **Test circuits are example of measuring FET1 side** 

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Test Circuit 1 Test Circuit 2<br>VSSS / ISSS IGSS<br>S2  S2<br>G2  A  G2<br>G1  VSS G1<br>A<br>S1  VGS S1  When FET1 is measured,<br>Gate and Source of FET2<br>are short-circuited.<br>Test Circuit 3 Test Circuit 4<br>VGS(th) gFS<br>S2  S2<br>G2  A  G2  A<br>When FET1 is measured,<br>Gate and Source of FET2<br>are short-circuited.<br>G1  VSS G1  VSS<br>VGS VGS<br>S1  S1 When FET1 is measured,<br>Gate and Source of FET2<br>are short-circuited.<br>Test Circuit 6<br>Test Circuit 5<br>td(on), tr, td(off), tf<br>RSS(on)<br>S2<br>S2  RL<br>IS<br>G2<br>G2<br>V<br>V<br>G1<br>G1<br>VSS<br>VGS S1<br>S1  When FET1 is measured,<br>PG  Gate and Source of FET2<br>are short-circuited.<br>Test Circuit 7 Test Circuit 8<br>Qg VF(S-S)<br>S2 S2<br>A  IS<br>G2  G2<br>When FET1 is measured,<br>Gate and Source of FET2<br>are short-circuited.<br>V<br>IG =1mA<br>G1  RL   VGS=0V G1<br>S1  S1  When FET1 is<br>measured,+4.5V is added to<br>PG  VSS VGS of FET2.<br>**----- End of picture text -----**<br>


When FET2 is measured, the position of FET1 and FET2 is switched. 

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**EFC8811R** 

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**EFC8811R** 

## **PACKAGE DIMENSIONS** 

unit : mm 

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CSP6, 1.77x3.54 / EFCP3517-6DGH-020<br>CASE 568AL<br>ISSUE O<br>E A B NOTES:<br>1. DIMENSIONING AND TOLERANCING PER<br>ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>po 40<br>MILLIMETERS<br>DIM MIN MAX<br>D A 0.22<br>PIN A1 b 0.22 0.28<br>REFERENCE b1 0.22 0.28<br>2X 0.05 C D 1.77 BSC<br>S a r E 3.54 BSC<br>e i s i a e 0.50 BSC<br>2X 0.05 C e2 1.00 BSC<br>TOP VIEW L 1.22 1.28<br>o man —<br>A<br>0.03 C RECOMMENDED<br>SOLDERING FOOTPRINT*<br>= —_"<br>0.03 C 4X<br>lel Ly SIDE VIEW an C d SEATINGPLANE R0.1258X , 2X0.25 1.25<br>PACKAGE<br>OUTLINE<br>0.50<br>e2 e2 PITCH<br>2X b 1 2 3 e/2<br>0.05 C A ee B e Sy 1<br>0.03 C<br>ea t colt one<br>as 2.00<br>PITCH<br>4X b1 DIMENSIONS: MILLIMETERS<br>6 5 4<br>L *For additional information on our Pb-Free strategy and soldering<br>1 : Source1  details, please download the ON Semiconductor Soldering and<br>2 : Gate1  BOTTOM VIEW Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br>


*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 

- 3 : Source1 

- 4 : Source2 

- 5 : Gate2 

6 : Source2 

|**ORDERING INFORMATION**||
|---|---|
|† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications<br>Device<br>Marking<br>Package<br>Shipping (Qty / Packing)<br>EFC8811R-TF<br>ML<br>CSP6, 1.77x3.54 /<br>EFCP3517-6DGH-020<br> (Pb-Free /Halogen Free)<br>5,000 / Tape & Reel<br>~~a a~~||
|Brochure, BRD8011/D.  http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF||



Note on usage : Since the EFC8811R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Please contact sales for use except the designated application. 

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