EFC6601R-TR

**Ordering number : ENA2151A** 

## **EFC6601R** 

## **N-Channel Power MOSFET 24V, 13A, 11.5m** Ω **, Dual EFCP** 

http://onsemi.com 

## **Features** 

- 2.5V drive 

- Common-drain type 

   - Protection diode in • Halogen free compliance 

- 2KV ESD HBM 

## **Specifi cations** 

## **Absolute Maximum Ratings** at Ta=25°C 

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Parameter Symbol Conditions Ratings Unit<br>Source-to-Source Voltage VSSS 24 V<br>Gate-to-Source Voltage  VGSS ±12 V<br>Source Current (DC) IS 13 A<br>Source Current (Pulse) ISP PW ≤ 10 μ s, duty cycle ≤ 1% 60 A<br>Total Dissipation PT When mounted on ceramic substrate (5000mm2 × 0.8mm) 2.0 W<br>Channel Temperature Tch 150 °C<br>Storage Temperature Tstg --55 to +150 °C<br>Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating<br>Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.<br>PR<br>Package Dimensions  Product & Package Information<br>unit : mm (typ) • Package  : EFCP<br>7073-001 • JEITA, JEDEC  : -<br>• Minimum Packing Quantity : 5,000 pcs./reel<br>2.7 EFC6601R-TR<br>6 5 4<br>fC Taping Type : TR Marking<br>MA<br>TR LOT No.<br>1 2 3<br>Electrical Connection<br>LI 4, 6<br>0.65<br>1 : Source1<br>2 : Gate1<br>3 : Source1<br>Rg<br>4 : Source2<br>5<br>5 : Gate2<br>6 : Source2<br>0.3<br>EFCP2718-6CE-020<br>Rg<br>2<br>oe<br>Rg=200 Ω 1, 3<br>1.81<br>0.2<br>0.65<br>**----- End of picture text -----**<br>


Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. PR 

Semiconductor Components Industries, LLC, 2013 **July, 2013** 

12313 TKIM TC-00002865/N2112 TKIM TC-00002837/HD 121009 PF  No. A2151-1/8 

**EFC6601R** 

## **Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Source-to-Source Breakdown Voltage|V(BR)SSS|IS=1mA, VGS=0V<br>Test Circuit 1|24|||V|
|Zero-Gate Voltage Source Current|ISSS|VSS=20V, VGS=0V<br>Test Circuit 1|||1|μA|
|Gate-to-Source Leakage Current|IGSS|VGS=±8V, VSS=0V<br>Test Circuit 2|||±1|μA|
|Cutoff Voltage|VGS(off)|VSS=10V, IS=1mA<br>Test Circuit 3|0.5||1.3|V|
|Forward Transfer Admittance|| yfs||VSS=10V, IS=3A<br>Test Circuit 4||15.5||S|
|Static Source-to-Source On-State Resistance|RSS(on)1|IS=3A, VGS=4.5V<br>Test Circuit 5|6.6|9.5|11.5|mΩ|
||RSS(on)2|IS=3A, VGS=4.0V<br>Test Circuit 5|7.0|10|12|mΩ|
||RSS(on)3|IS=3A, VGS=3.8V<br>Test Circuit 5|7.3|10.5|13|mΩ|
||RSS(on)4|IS=3A, VGS=3.1V<br>Test Circuit 5|8.0|11.5|15|mΩ|
||RSS(on)5|IS=3A, VGS=2.5V<br>Test Circuit 5|9.0|13|17|mΩ|
|Turn-ON Delay Time|td(on)|VDD=10V, VGS=4.5V, IS=3A<br>Test Circuit 7||280||ns|
|Rise Time|tr|||630||ns|
|Turn-OFF Delay Time|td(off)|||53000||ns|
|Fall Time|tf|||47000||ns|
|Total Gate Charge|Qg|VDD=10V, VGS=4.5V, IS=13ATest Circuit 8||48||nC|
|Forward Source-to-Source Voltage|VF(S-S)|IS=3A, VGS=0V<br>Test Circuit 6||0.76|1.2|V|



## **Ordering Information** 

|**Ordering Information**||||
|---|---|---|---|
|Device|Package|Shipping|memo|
|EFC6601R-TR|EFCP|5,000pcs./reel|Pb Free and Halogen Free|



No. A2151-2/8 

**EFC6601R** 

## **Test circuits are example of measuring FET1 side** 

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Test Circuit 1 Test Circuit 2<br>ISSS IGSS<br>S2  S2<br>G2  A  G2<br>G1  VSS G1<br>A<br>S1  VGS S1  When FET1 is measured,<br>Gate and Source of FET2<br>are short-circuited.<br>Test Circuit 3 Test Circuit 4<br>VGS(off) | yfs  |<br>S2  S2<br>G2  A  G2  A<br>When FET1 is measured,<br>Gate and Source of FET2<br>are short-circuited.<br>G1  VSS G1  VSS<br>VGS VGS<br>S1  S1 When FET1 is measured,<br>Gate and Source of FET2<br>are short-circuited.<br>Test Circuit 6<br>Test Circuit 5<br>VF(S-S)<br>RSS(on)<br>S2  S2<br>IS  4.5V IF<br>G2  G2<br>V  V<br>G1  G1<br>VGS=0V<br>VGS<br>S1  S1  When FET1 is<br>measured,+4.5V is added to<br>VGS of FET2.<br>Test Circuit 8<br>Test Circuit 7<br>td(on), tr, td(off), tf Qg<br>S2  S2<br>RL A<br>G2  G2<br>When FET1 is measured,<br>Gate and Source of FET2<br>are short-circuited. V  IG =1mA<br>G1  G1  RL<br>R R<br>VDD<br>S1  S1<br>PG  PG  50 Ω VDD When FET1 is measured,<br>Gate and Source of FET2<br>are short-circuited.<br>**----- End of picture text -----**<br>


No. A2151-3/8 

**EFC6601R** 

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RSS(on)  --  VGS RSS(on)  --  Ta<br>50 20<br>Ta=25°C<br>45 IS=3A 18<br>40 16<br>35 14<br>30 12<br>25 10<br>20 8<br>15 6<br>10 4<br>5 2<br>0 0<br>0 2 4 6 8 10 --60 --40 --20 0 20 40 60 80 100 120 140 160<br>Gate to Source Voltage, VGS  --  V IT16976 Ambient Temperature, Ta  --  °C IT16977<br>Qg  --  VGS IS  --  VSS<br>4.5 6.0<br>VSS=10V<br>5.5<br>4.0 IS=13A<br>5.0<br>3.5<br>4.5<br>3.0 4.0<br>3.5<br>2.5<br>3.0<br>2.0<br>2.5<br>1.5 2.0<br>1.5<br>1.0<br>1.0<br>0.5<br>0.5<br>0 0<br>0 10 20 30 40 50 60 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0<br>Total Gate Charge, Qg  --  nC IT16978 Drain to Source Voltage, VSS  --  V IT16979<br>IS  --  VGS | yfs  |   --  IS<br>15 3<br>14 V SS =10V 2 VSS=10V<br>13 10<br>12 7<br>5<br>11 3<br>10 2<br>9<br>1.0<br>8 7<br>7 5<br>3<br>6<br>2<br>5<br>4 0.1<br>7<br>3 5<br>2 3<br>1 2<br>0 0.01<br>0 0.5 1.0 1.5 2.0 0.001 2 3 5 70.01 2 3 5 7 0.1 2 3 5 71.0 2 3 5 7 10 2<br>Gate to Source Voltage, VGS  --  V IT16980 Source Current, IS  --  A IT16981<br>10 IS  --  VF(S-S) 100K S/W Time  --  ID<br>7 VGS=0V<br>5 5<br>3 3<br>2 2<br>1.0 10K<br>7<br>5 5<br>3 3<br>2 2<br>0.1 1K<br>7<br>5 5<br>td(on)<br>3 3<br>2 2 VSS=10V<br>0.01 100 VGS=4.5V<br>0 0.4 0.5 0.6 0.7 0.8 0.9 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2<br>Forward Source to Source Voltage, VF(S-S)  --  V IT16982 Source Current, IS  --  A IT16983<br>7<br>7<br>7<br>tf<br>IS=3A, VGS=4V<br>IS=3A, VGS=4.5V<br>IS=3A, VGS=3.1V<br>IS=3A, VGS=3.8V<br>IS=3A, VGS=2.5V<br>tr<br>VGS=1.5V<br>°C<br>75<br>td(off)<br>°C<br>Ta= --25<br>°C<br>25<br>°C<br>Ta=75 °C<br>25<br>3.1V<br>4.0V<br>°C<br>--25<br>2.5V<br>°C<br>Ta=75<br>°C<br>--25<br>4.5V<br>10.0V<br>°C<br>25<br>Ω Ω<br>Static Source to Source On State Resistance, RSS(on)  --  m Static Source to Source On State Resistance, RSS(on)  --  m<br>Drain Current, IS  --  A<br>Gate to Source Voltage, VGS  --  V<br>|  --  S<br>fs<br>y<br>|<br>Source Current, IS  --  A<br>Forward Transfer Admittance,<br>Source Current, IF  --  A<br>Switching Time, S/W Time  --  ns<br>**----- End of picture text -----**<br>


No. A2151-4/8 

**EFC6601R** 

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A S O PT  --  Ta<br>100 2.5<br>7 When mounted on ceramic substrate<br>5 (5000mm [2] ×0.8mm)<br>3<br>2<br>2.0<br>10<br>7<br>5<br>3 1.5<br>2<br>1.0<br>7 Operation in this area<br>5 is limited by R DS (on). 1.0<br>3<br>2<br>0.1<br>7 0.5<br>5 Ta=25°C<br>3<br>2 Single pulse<br>0.01 When mounted on ceramic substrate (5000mm [2] ×0.8mm)  0<br>0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 20 40 60 80 100 120 140<br>Source Voltage to Source Voltage, VSS  --  V IT16984 Ambient Temperature, Ta  --  °C IT16985<br>ISP=60A(PW≤10μs)<br>IS=13A<br>100<br>μs<br>DC operation<br>10ms<br>1ms<br>100ms<br>Source Current, IS  --  A<br>Total Dissipation, PT  --  W<br>**----- End of picture text -----**<br>


No. A2151-5/8 

**EFC6601R** 

**Taping Specifi cation** EFC6601R-TR 

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No. A2151-6/8 

**EFC6601R** 

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Outline Drawing<br> EFC6601R-TR<br>**----- End of picture text -----**<br>


## **Land Pattern Example** 

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Mass (g) Unit Unit: mm<br>0.0024<br>* For reference [mm]<br>**----- End of picture text -----**<br>


No. A2151-7/8 

**EFC6601R** 

Note on usage : Since the EFC6601R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 

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PS No. A2151-8/8