EESX1140

## **Photomicrosensor (Transmissive) EE-SX1140** 

**Be sure to read** _**Precautions**_ **on page 24.** 

## ■ **Dimensions** 

**Note:** All units are in millimeters unless otherwise indicated. 

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Four, 0.8 Four, C0.3 3.2 ± 0.1 dia. through-hole<br>3 5<br>Four, 0.8<br>14<br>23<br>1.5 1.5<br>0.2<br>A B<br>Optical<br>axis<br>16.3<br>12.5 ± 0.15 (13.5)<br>5.2<br>2.8<br>Four, 0.5 A B 4.5 ± 0.5 K A<br>E C<br>(2.5) Four, 0.25 (2.5)<br>Cross section AA (19.9) Cross section BB<br>Internal Circuit<br>K C<br>Unless otherwise specified, the<br>tolerances are as shown below.<br>A E<br>Dimensions         Tolerance<br>3 mm max. ± 0.3<br>Terminal No.      Name<br>3  <  mm  ≤  6 ± 0.375<br>A     Anode<br>6  <  mm  ≤  10 ± 0.45<br>K     Cathode<br>10  <  mm  ≤  18 ± 0.55<br>C     Collector<br>E     Emitter 18  <  mm  ≤  30 ± 0.65<br>**----- End of picture text -----**<br>


## ■ **Features** 

- General-purpose model with a 14-mm-wide slot. 

- 16.3-mm-tall model with a deep slot. 

- PCB mounting type. 

## ■ **Absolute Maximum Ratings (Ta = 25** ° **C)** 

||**Item**|**Symbol**|**Rated value**|
|---|---|---|---|
|**Emitter**|**Forward current**|IF|50 mA<br>(see note 1)|
||**Pulse forward cur-**<br>**rent**|IFP|1 A<br>(see note 2)|
||**Reverse voltage**|VR|4 V|
|**Detector**|**Collector–Emitter**<br>**voltage**<br>|VCEO<br>|30 V|
||**Emitter–Collector**<br>**voltage**|VECO|---|
||**Collector current**|IC|20 mA|
||**Collector dissipa-**<br>**tion**|PC|100 mW<br>(see note 1)|
|**Ambient tem-**<br>**perature**|**Operating**|Topr|–25°C to 85°C|
||**Storage**|Tstg|–30°C to<br>100°C|
|**Soldering temperature**||Tsol|260°C<br>(see note 3)|



- **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25 ° C. 

   **2.** The pulse width is 10 μ s maximum with a frequency of 100 Hz. 

   **3.** Complete soldering within 10 seconds. 

## ■ **Electrical and Optical Characteristics (Ta = 25** ° **C)** 

||**Item**|**Symbol**|**Value**|**Condition**|
|---|---|---|---|---|
|**Emitter**<br> <br> <br>|**Forward voltage**|VF|1.2 V typ., 1.5 V max.|IF= 30 mA|
||**Reverse current**|IR|0.01μA typ., 10μA max.|VR= 4 V|
||**Peak emission wavelength**|λP|940 nm typ.|IF= 20 mA|
|**Detector**<br> <br> <br> <br> <br><br> <br>|**Light current**|IL|0.4 mA min.|IF= 20 mA, VCE= 10 V|
||**Dark current**|ID|2 nA typ., 200 nA max.|VCE= 10 V, 0lx|
||**Leakage current**|ILEAK|---|---|
||**Collector–Emitter saturated volt-**<br>**age**|VCE(sat)|0.1 V typ., 0.4 V max.|IF= 20 mA, IL= 0.1 mA|
||**Peak spectral sensitivity wave-**<br>**length**|λP|850 nm typ.|VCE= 10 V|
|**Rising time**||tr|4μs typ.|VCC= 5 V, RL= 100Ω, IL= 5 mA|
|**Falling time**||tf|4μs typ.|VCC= 5 V, RL= 100Ω, IL= 5 mA|



**EE-SX1140** Photomicrosensor (Transmissive) 

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## ■ **Engineering Data** 

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Forward Current vs. Collector  Forward Current vs. Forward  Light Current vs. Forward Current<br>Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical)<br>60 150 60 10<br>Ta = 25 ° C<br>IF V CE  = 10 V<br>50 50<br>Ta =  − 30 ° C 8<br>40 PC 100 40 Ta = 25 ° C<br>Ta = 70 ° C 6<br>30 30<br>4<br>20 50 20<br>2<br>10 10<br>0 − 40 − 20 0 20 40 60 80 1000 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 00 10 20 30 40 50<br>Ambient temperature Ta ( ° C) Forward voltage VF (V) Forward current IF (mA)<br>Light Current vs. Collector − Emitter  Relative Light Current vs. Ambi- Dark Current vs. Ambient<br>Voltage Characteristics (Typical) ent Temperature Characteristics  Temperature Characteristics<br>1098 Ta = 25 ° C I I FF = 50 mA = 40 mA (Typical) 120110 VIFCE= 20 mA  = 5 V 10,0001,000 (Typical) 0 VCE l x = 10 V<br>7 100<br>6 I F = 30 mA 100<br>10<br>5 90<br>4 IF = 20 mA 1<br>3 80<br>0.1<br>2 IF = 10 mA<br>70 0.01<br>1<br>0 1 2 3 4 5 6 7 8 9 10 60 − 40 − 20 0 20 40 60 80 100 0.001 − 30 − 20 − 10 0 10 20 30 40 50 60 70 80 90<br>Collector − Emitter voltage VCE (V) Ambient temperature Ta ( ° C) Ambient temperature Ta ( ° C)<br>Response Time vs. Load Resist- Sensing Position Characteristics  Sensing Position Characteristics<br>ance Characteristics (Typical) (Typical) (Typical)<br>  10,000 Ta = 25VCC = 5 V  ° C   100120 Ta = 25IVFCE= 20 mA  = 10 V  ° C   100120 Ta = 25IVFCE= 20 mA  = 10 V  ° C<br>(Center of optical axis)<br>  1,000<br>d<br>80 80<br>tf<br>  100 60 60 d<br>40 40<br>tr<br>  10<br>20 20<br>  10.01 0.1 1 10 0 − 1.5 − 0.75 0 0.75 1.5 2.25 3 0 − 2.0 − 1.5 − 1.0 − 0.5 0 0.5 1.0 1.5 2.0<br>Load resistance RL (k Ω ) Distance d (mm) Distance d (mm)<br>Response Time Measurement<br>Circuit<br>Input<br>0<br>t<br>Output 90%<br>0 10%<br>t<br>t r t f<br>Input IL VCC<br>Output<br>RL<br> (mA)F  (mW)C  (mA)<br>F<br> (mA)<br>L<br>Forward current  I Light current  I<br>Forward current  I<br>Collector dissipation P<br> (%)<br>L<br> (mA)<br>L  (nA)<br>Light current  I D<br>Dark current   I<br>Relative light current  I<br>s) μ  (%)L  (%)<br>L<br>Response time tr, tf ( Relative light current  I (Center of optical axis)<br>Relative light current  I<br>**----- End of picture text -----**<br>


**EE-SX1140** Photomicrosensor (Transmissive) 

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