EESX1106

## **Photomicrosensor (Transmissive) EE-SX1106** 

**Be sure to read** _**Precautions**_ **on page 25.** 

## ■ **Dimensions** 

**Note:** All units are in millimeters unless otherwise indicated. 

## ■ **Features** 

- Ultra-compact with a slot width of 3 mm. 

- PCB mounting type. 

- High resolution with a 0.4-mm-wide aperture. 

## ■ **Absolute Maximum Ratings (Ta = 25** ° **C)** 

|Four, 0.2<br>Two, C0.7<br>Optical<br>axis<br>Gate<br>Two, R1<br>Two, C0.2<br>5.4<br>5 min.<br>**Item**<br>**Symbol**<br>**Emitter**<br>**Forward current**<br>IF<br>**Pulse forward cur-**<br>**rent**<br>IFP<br>**Reverse voltage**<br>VR<br>**Detector**<br>**Collector–Emitter**<br>**voltage**<br>VCEO<br>**Emitter–Collector**<br>**voltage**<br>VECO<br>(1,2)94<br>om (1,2)<br>CY<br>|<br>\~~|~~|Four, 0.2<br>Two, C0.7<br>Optical<br>axis<br>Gate<br>Two, R1<br>Two, C0.2<br>5.4<br>5 min.<br>**Item**<br>**Symbol**<br>**Emitter**<br>**Forward current**<br>IF<br>**Pulse forward cur-**<br>**rent**<br>IFP<br>**Reverse voltage**<br>VR<br>**Detector**<br>**Collector–Emitter**<br>**voltage**<br>VCEO<br>**Emitter–Collector**<br>**voltage**<br>VECO<br>(1,2)94<br>om (1,2)<br>CY<br>|<br>\~~|~~|Four, 0.2<br>Two, C0.7<br>Optical<br>axis<br>Gate<br>Two, R1<br>Two, C0.2<br>5.4<br>5 min.<br>**Item**<br>**Symbol**<br>**Emitter**<br>**Forward current**<br>IF<br>**Pulse forward cur-**<br>**rent**<br>IFP<br>**Reverse voltage**<br>VR<br>**Detector**<br>**Collector–Emitter**<br>**voltage**<br>VCEO<br>**Emitter–Collector**<br>**voltage**<br>VECO<br>(1,2)94<br>om (1,2)<br>CY<br>|<br>\~~|~~|**Rated value**<br>50 mA<br>(see note 1)<br>---<br>5 V<br>30 V<br>4.5 V|
|---|---|---|---|
|Four, 0.5<br>H<br>(1.5)|**Collector current**|IC|30 mA|
||**Collector dissipa-**|PC|80 mW|
||**tion**||(see note 1)|
|**Internal Circuit**<br>1 0<br>−0.1dia<br>1.4<br>0<br>−0.1dia<br>EO<br>o«<br>4 foe<br>oc|**Ambient tem-**<br>**perature**<br>**Operating**<br>**Storage**<br>**Soldering temperature**|Topr<br>Tstg<br>Tsol|–25°C to 85°C<br>–30°C to 85°C<br>260°C<br>(see note 2)|



- **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 

   **2.** Complete soldering within 3 seconds. 

|**Terminal No.      Name**|**Terminal No.      Name**||
|---|---|---|
|A|Anode||
|K<br>C|Cathode<br>Collector|Unless otherwise specified,<br>the tolerances are±0.2 mm.|
|E|Emitter||



## ■ **Electrical and Optical Characteristics (Ta = 25** ° **C)** 

~~eG~~ **Item Symbol Value Condition Emitter** ~~a~~ **Forward voltage** VF 1.3 V typ., 1.6 V max. IF = 50 mA **Reverse current** IR 10 μA max. VR = 5 V ~~Seees~~ **Peak emission wavelength** λP 950 nm typ. IF = 50 mA ~~Qe~~ **Detector** ~~es~~ **Light current** IL 0.2 mA min. IF = 20 mA, VCE = 5 V ~~Qe~~ **Dark current** ID 500 nA max. VCE = 10 V, 0 lx ~~es~~ **Leakage current** ILEAK ----- **Collector–Emitter saturated volt-** VCE (sat) 0.4 V max. IF = 20 mA, IL = 0.1 mA **age Peak spectral sensitivity wave-** λP 800 nm typ. VCE = 5 V ~~SSSa~~ **length Rising time** tr 10 μs typ. VCC = 5 V, RL = 100 Ω, ~~a~~ IF = 20 mA **Falling time** tf 10 μs typ. VCC = 5 V, RL = 100 Ω, ~~a~~ IF = 20 mA 

**EE-SX1106** Photomicrosensor (Transmissive) 

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## ■ **Engineering Data** 

**Forward Current vs. Collector Dissipation Temperature Rating** 

**Forward Current vs. Forward Voltage Characteristics (Typical)** 

**Light Current vs. Forward Current Characteristics (Typical)** 

**==> picture [490 x 593] intentionally omitted <==**

**----- Start of picture text -----**<br>
Ta = 25°C<br>TEEN TEP JUTE)” FREE rE VCE = 5 V<br>30 | . 60 30 1.2 Pi TT TTYq f Tl<br>0.8 4<br>tTIN\ Seeeee ie fefd<br>20 “0 20 PTT Ty TT<br>FiN-" Seeeeee pt iA7|ttt t |<br>" Hy “OZ<br>; ; ; wy wt ti ttt tt<br>-40 Ambient temperature Ta ( -20 ie} 20 40 60 ° 80 C) 100 0 0.2 Forward voltage V 04 06 08 1 12 F 14  (V) 16 18 0 10 Forward current I 20 30 F (mA) 40 50<br>Light Current vs. Collector − Emitter  Relative Light Current vs. Ambi- Dark Current vs. Ambient<br>Voltage Characteristics (Typical) ent Temperature Characteristics  Temperature Characteristics<br>(Typical) (Typical)<br>1.0ro, Ta = 25°C LLL] IF = 25 mA B 160 Tr | | | VIFCE= 20 mA  = 5 V 00 ——————————_——== SS VCE = 30 V S<br>TTT oat} eet T T mT] 140 | ft ff wokS a VCE =20 V —-—=eaae<br>IF = 20 mA VCE = 10 V<br>At t SaaeetaS lao<br>a Pt tt tT tT eS 7aE8<br>oder TT IF = 15 mA  | a SS S<br>it yt « — 10 felt eZ<br> ——— ———<br>“TEwT atT IF = 10 mA e® pee| | |<br>oall IF = 5 mA LL |<br>qari tt i ae iit | nbaLttt t tt yf<br>A RR ; por LL<br>Saoao>wTeow>owwr 40. 20 0 20 40. +60 80 100 -30 -20 -10 0 10 20 30 40 50 60 70 80<br>Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C)<br>Response Time vs. Light Current  Sensing Position Characteristics  Sensing Position Characteristics<br>Characteristics (Typical) (Typical) (Typical)<br>1,000 pense | 120 120<br>|SOE|ee Ta = 25VCE = 5 V °C 1400 Ta = 25IVFCE= 20 mA  = 5 V °C 100 Ta = 25IVFCE= 20 mA  = 5 V °C<br>woeLUM Co PLL XLY LL<br>SSO<br>2, Se RL = 1K Ω 60 aot 60 B<br>RL = 500 Ω<br>Es| eee ee RL = 100 Ω<br>on ee 20 20<br>CLT [ET] conto [El] ;FT 0TAEE<br>01 1 10 160 ia) 0.5 1 15 2 25 3 3.5 4 0 0.5 4 15 2 25 3 35 4<br>Light current It (mA) Distance d (mm) Distance d (mm)<br>Response Time Measurement Circuit<br>Input — Le—t<br>90 %<br>Output ° 10 %<br>tr tf<br>Input e vec<br>Output<br> (mW)  (mA)<br>C F<br> (mA)<br>F  (mA)<br>L<br>Forward current  I Light current  I<br>Forward current  I<br>Collector dissipation P<br> (%)<br>L<br> (mA)L  (nA)D<br>Light current  I Dark current   I<br>Relative light current  I<br>s)<br>Response time tr, tf (μ  (%)Relative light current  IL  (%)Relative light current  IL<br>**----- End of picture text -----**<br>


**EE-SX1106** Photomicrosensor (Transmissive) 

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