EESX1071

## **Photomicrosensor (Transmissive) EE-SX1071** 

**Be sure to read** _**Precautions**_ **on page 25.** 

## ■ **Dimensions** 

**Note:** All units are in millimeters unless otherwise indicated. 

## ■ **Features** 

- General-purpose model with a 3.4-mm-wide slot. 

- PCB mounting type. 

- High resolution with a 0.5-mm-wide aperture. 

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6.2<br>cae!<br>Four, C0.3<br>0.5<br>0.2<br>a TT<br>2.1<br>Optical<br>axis<br>10.2<br>aem= a pei a 7.2<br>Four, 0.5 Four, 0.25 Cross section BB<br>Li (2.54) | i Wi<br>Cross section AA pa<br>Internal Circuit<br>K C Unless otherwise specified, the<br>tolerances are as shown below.<br>A E Dimensions         Tolerance<br>3 mm max. ±0.3<br>Terminal No.      Name<br>3 < mm ≤ 6 ±0.375<br>A     Anode<br>6 < mm ≤ 10 ±0.45<br>K     Cathode<br>10 < mm ≤ 18 ±0.55<br>C     Collector<br>E     Emitter 18 < mm ≤ 30 ±0.65<br>**----- End of picture text -----**<br>


## ■ **Absolute Maximum Ratings (Ta = 25** ° **C)** 

|**Item**|**Item**|**Symbol**|**Rated value**|
|---|---|---|---|
|**Emitter**|**Forward current**|IF|50 mA<br>(see note 1)|
||**Pulse forward cur-**<br>**rent**|IFP|1 A<br>(see note 2)|
||**Reverse voltage**|VR|4 V|
|**Detector**|**Collector–Emitter**<br>**voltage**|VCEO|30 V|
||**Emitter–Collector**<br>**voltage**|VECO|---|
||**Collector current**|IC|20 mA|
||**Collector dissipa-**<br>**tion**|PC|100 mW<br>(see note 1)|
|**Ambient tem-**<br>**perature**|**Operating**|Topr|–25°C to 85°C|
||**Storage**|Tstg|–30°C to<br>100°C|
|**Soldering temperature**||Tsol|260°C<br>(see note 3)|



- **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 

   **2.** The pulse width is 10 μs maximum with a frequency of 100 Hz. 

   **3.** Complete soldering within 10 seconds. 

## ■ **Electrical and Optical Characteristics (Ta = 25** ° **C)** 

~~Pease~~ **Item Symbol Value** ~~ee~~ **Condition Emitter** ~~es~~ **Forward voltage** VF 1.2 V typ., 1.5 V max. IF = 30 mA **Reverse current** IR 0.01 μA typ., 10 μA max. VR = 4 V ~~————Sns~~ **Peak emission wavelength** λ ~~Ry~~ P 940 nm typ. ~~Rnee~~ IF = 20 mA **Detector** ~~a~~ **Light current** I ~~GR~~ L ~~(~~ 0.5 mA min., 14 mA max. ~~ID~~ IF = 20 mA, VCE = 10 V ~~ey~~ **Dark current** ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx ~~ny~~ **Leakage current** ~~(Rn~~ ILEAK ~~(I(RG~~ ----- **Collector–Emitter saturated volt-** VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA **age Peak spectral sensitivity wave-** λP 850 nm typ. VCE = 10 V ~~SSSee~~ **length** ~~ee ny~~ **Rising time** tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA ~~a~~ **Falling time** ~~(~~ tf ~~Rs~~ 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA 

**EE-SX1071** Photomicrosensor (Transmissive) 

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## ■ **Engineering Data** 

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Forward Current vs. Collector  Forward Current vs. Forward  Light Current vs. Forward Current<br>Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical)<br>60 150 60 20<br>Ta = 25°C<br>IF VCE = 10 V<br>Pt tT Tt Pete RRL<br>Ta = −30°C<br>FPN PC TE Ta = 25°C M0) wocree y<br>Ta = 70°C<br>LNA po e *<br>SREANE\ SReees ieEEE oo<br>' pp} NG SRRee) 6ese<br>;Pitt | ; ;>yw)WZ, iapaen| |<br>-40 -20 Q 20 4g 60 80 100 0 02 04 06 08 1 12 #14 #16 #18 0 10 20 30 40 50<br>Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA)<br>Light Current vs. Collector − Emitter  Relative Light Current vs. Ambi- Dark Current vs. Ambient<br>Voltage Characteristics (Typical) ent Temperature Characteristics  Temperature Characteristics<br>(Typical) (Typical)<br>Ta = 25°C IVFCE= 20 mA  = 5 V 0 VCElx = 10 V ——<br>‘CCE IF = 50 mA SaGnec=->cee<br>14 n re) a A<br>Pf ot IF = 40 mA | 100 L SS<br>0TTL| et 0LAT NG SSelSSS<br>IF = 30 mA<br>oo A<br>== SS<br>—, J IF = 20 mA 4 = SS<br>| ane eee ° {ssar ona ee<br>oe ee ==> aaa aaa<br>| A aa Le IF = 10 mA ” 00ie<br>9T EE Se SaSSeaS<br>0 1 2 3 4 5 6 7 3 g 10 60-40 -20 0 20 40 60 80 100 ooo:+30ELL-20 -10 0 10 20 30 40 50 60 70 80 90<br>Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C)<br>Response Time vs. Load Resist- Sensing Position Characteristics  Sensing Position Characteristics<br>ance Characteristics (Typical) (Typical) (Typical)<br>10,00 paaoiSe SS Ta = 25VCC = 5 V °C anll ‘00120 VTa = 25IFCE= 20 mA  = 10 V °C   100120 a ITa = 25VFCE= 20 mA  = 10 V °C<br>(Center of<br>a SSSPE ae 80eT optical axis) a7o-4-| 80 || | \|\ |<br>d<br>i oe eT PT VF 2 60 P| | i\ | ;<br>a ee ee” ee i<br>Cer © rill 40 \ lil<br>oAat|<br>SSS a en 20 20 \<br>0.01(LEMEeee4 Ty1 10 ;LPM)O05 -025 0 025 05 O75 10 0−2.0 LA −1.5 −1.0 −0.5 0 0.5 IN 1.0 1.5 2.0<br>Load resistance RL (kΩ) Distance d (mm) Distance d (mm)<br>Response Time Measurement<br>Circuit<br>Input —!F Le<br>—t<br>90 %<br>Output 10 %<br>° ft } cman t<br>tr tf<br>Input iM vec<br>=k|<br>Output<br> (mA)F  (mW)C  (mA)F<br> (mA)<br>L<br>Forward current  I Collector dissipation P Forward current  I Light current  I<br> (%)<br> (mA)Light current  IL L  (nA)Dark current   ID<br>Relative light current  I<br> (%)<br>s) L<br>μ<br> (%)<br>L<br>Response time tr, tf ( Relative light current  I (Center of optical axis)<br>Relative light current  I<br>**----- End of picture text -----**<br>


**EE-SX1071** Photomicrosensor (Transmissive) 

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