EESX1046

## **Photomicrosensor (Transmissive) EE-SX1046** 

**Be sure to read** _**Precautions**_ **on page 24.** 

## ■ **Dimensions** 

**Note:** All units are in millimeters unless otherwise indicated. 

## ■ **Features** 

- With a horizontal sensing aperture. 

- PCB mounting type. 

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•<br>6.5 ■<br>Optical axis 5<br>2.5 Item<br>[pr<br>Emitter Forward current<br>10±0.3<br>0.5±0.1 340.2<br>i 0.5±0.1 BoA 174 Optical  wosA Pulse forward cur-rent<br>axis<br>gqZI ee Optical axis 54021 gZ Reverse voltage<br>Detector Collector–Emitter<br>Z7 voltage<br>Four, 0.25<br>9 min. 0.3 max. Emitter–Collector<br>tyi]ll aW Four, 0.25 :| Beka ff| ii 0.25 max. voltage<br>Collector current<br>(2.5) (7) .2.5<br>E c pee) Collector dissipa-<br>Cross section BB Cross section AA tion<br>**----- End of picture text -----**<br>


- High resolution with a 0.5-mm-wide aperture. 

## ■ **Absolute Maximum Ratings (Ta = 25** ° **C)** 

|**Item**|**Item**|**Symbol**|**Rated value**|
|---|---|---|---|
|**Emitter**|**Forward current**|IF|50 mA<br>(see note 1)|
||**Pulse forward cur-rent**<br>**rent**|IFP|1 A<br>(see note 2)|
||**Reverse voltage**|VR|4 V|
|**Detector**<br>~~g~~<br>7|**Collector–Emitter**<br>**voltagegee**<br>~~g~~<br>7|VCEO<br>~~g~~|30 V<br>~~g~~|
||**Emitter–Collector**<br>**voltagegee**|VECO|---|
||**Collector current**|IC|20 mA|
||**Collector dissipa-**<br>**tion**|PC|100 mW<br>(see note 1)|
|**Ambient tem-**<br>**perature**|**Operating**|Topr|–25°C to 85°C|
||**Storage**|Tstg|–30°C to<br>100°C|
|**Soldering temperature**||Tsol|260°C<br>(see note 3)|



||**Internal Circuit**|**Internal Circuit**|**Internal Circuit**|**Internal Circuit**|**Internal Circuit**|**Internal Circuit**|||||
|---|---|---|---|---|---|---|---|---|---|---|
|K|||||||C||Unless otherwise specified, the<br>tolerances are as shown below.||
|A|||||||E||**Dimensions           Tolerance**|**Dimensions           Tolerance**|
||||||||||3 mm max.|±0.3|
|**Terminal No.      Name**<br>A|||||**Terminal No.      Name**<br>Anode||||3<mm≤6|±0.375|
||||||||||6<mm≤10|±0.45|
|K|K||||Cathode||||||
|C|C||||Collector||||10<mm≤18|±0.55|
|E|E||||Emitter||||18<mm≤30|±0.65|



- **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 

   **2.** The pulse width is 10 μs maximum with a frequency of 100 Hz. 

   **3.** Complete soldering within 10 seconds. 

## ■ **Electrical and Optical Characteristics (Ta = 25** ° **C)** 

|**Item**|**Item**|**Symbol**|**Value**|**Condition**|
|---|---|---|---|---|
|**Emitter**|**Forward voltage**|VF|1.2 V typ., 1.5 V max.|IF= 30 mA|
||**Reverse current**|IR|0.01μA typ., 10μA max.|VR= 4 V|
||**Peak emission wavelength**|λP|920 nm typ.|IF= 20 mA|
|**Detector**|**Light current**|IL|1.2 mA min., 14 mA max.|IF= 20 mA, VCE= 5 V|
||**Dark current**|ID|2 nA typ., 200 nA max.|VCE= 10 V, 0lx|
||**Leakage current**|ILEAK|---|---|
||**Collector–Emitter saturated volt-**<br>**age**|VCE(sat)|0.1 V typ., 0.4 V max.|IF= 20 mA, IL= 0.1 mA|
||**Peak spectral sensitivity wave-**<br>**length**|λP|850 nm typ.|VCE= 10 V|
|**Rising time**||tr|4μs typ.|VCC= 5 V, RL= 100Ω, IL= 5 mA|
|**Falling time**||tf|4μs typ.|VCC= 5 V, RL= 100Ω, IL= 5 mA|



**EE-SX1046** Photomicrosensor (Transmissive) 

76 

## ■ **Engineering Data** 

**Forward Current vs. Collector Dissipation Temperature Rating** 

## **Forward Current vs. Forward Light Current vs. Forward Current Voltage Characteristics (Typical) Characteristics (Typical)** 

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Ta = 25°C<br>IF VCE = 5 V<br>; PT ttt PEE TTP TE H H<br>Ta = −30°C<br>PC<br>TOON » Ta = 25°C | COO<br>Ta = 70°C<br>.et NAL aaE ee Woof) eeFREE<br>.P] | TINE\ .PLETAL)HH CELAPCO<br>= - PCO ATT<br>COPPENT EPerrae) Rep<br>Pi} Tt | BEGGS)Wy) Sune ALLELEceneeeeee<br>-40 -20 0 20 40 60 80 100 ro) 02 04 06 O08 1 12 14 16 18 0 10 20 30 40<br>Ambient temperature Ta (°C) Forward voltage VF (V)F (V) (V) Forward current IF (mA)<br> (mA)  (mW)C  (mA)F<br>F  (mA)<br>L<br>Forward current  I Light current  I<br>Forward current  I<br>Collector dissipation P<br>**----- End of picture text -----**<br>


Forward voltage VF (V)F (V) (V) **Relative Light Current vs. Ambient Temperature Characteristics (Typical)** 

**Light Current vs. Collector** − **Emitter Voltage Characteristics (Typical)** 

**Dark Current vs. Ambient Temperature Characteristics (Typical)** 

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Ta = 25°C IF = 20 mA  VCE = 10 V<br>VCE = 5 V 0 lx<br>e 8 e ee ee eecesaere<br>2a IF = 50 mA ee a<br>pee ee eeee IF = 40 mA e See -------——-<br>if, ft een s ee« ZOae aN ee = eS AS======-==——SS”,<br>IF = 30 mA<br>fT A |<br>1 — —T IF = 20 mA | Yr} | i tl ‘tobe == — >IZ =<br>| rT SS S= >= SSS ES SS SS<br>IF = 10 mA<br>—eeeEeEeeEe——EEEE A easES r wokeSS SS SSttSS tt} SS<br>fo} 1 J 2 3 4 5 6 7 8 9 10 LEE-40 -20 fo} 20 40LE)60 80 100 C=""30 -20 -10 0 10 20 30 40 50 60 70 80<br>Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C)<br> (%)<br>L<br> (mA)<br>L  (nA)<br>Light current  I D<br>Relative light current  I Dark current   I<br>**----- End of picture text -----**<br>


## **Sensing Position Characteristics (Typical)** 

## **Sensing Position Characteristics (Typical)** 

## **Response Time vs. Load Resistance Characteristics (Typical)** 

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120 120<br>rfSS[iim TT i2 Ta = 25VCC = 5 V °C   100 IVTa = 25FCE= 20 mA  = 5 V °C   100 IVTa = 25FCE= 20 mA  = 10 V °C<br>A 80 P| ATL 80 P|AT (Center of  optical axis)<br>d<br>d<br>| | 60 P| | \ > 60 Pf | \<br>oTa ee 4020 | | 4020 Pi\ : I<br>a|<br>0 0<br>(LLU TP −0.75 −0.5 −0.25 0 0.25 0.5 0.75 −1.5 −1.0 −0.5 0 0.5 1.0 1.5<br>0.01 01 1 10<br>Distance d (mm) Distance d (mm)<br>Load resistance RL (kΩ)L (kΩ) (kΩ)Ω))<br>Response Time Measurement<br>Input —_!J Le<br>—t<br>90 %<br>Output 10 %<br>° ft i —--t<br>tr tf<br>Input<br>Output<br>Ru<br>- - Vec<br> (%)L  (%)L<br>Relative light current  I (Center of optical axis) Relative light current  I<br>**----- End of picture text -----**<br>


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s)<br>μ<br>Response time tr, tf (<br>**----- End of picture text -----**<br>


Load resistance RL (kΩ)L (kΩ) (kΩ)Ω)) **Response Time Measurement Circuit** 

**EE-SX1046** Photomicrosensor (Transmissive) 

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