EESX1018

## **Photomicrosensor (Transmissive) EE-SX1018** 

**Be sure to read** _**Precautions**_ **on page 25.** 

## ■ **Dimensions** 

**Note:** All units are in millimeters unless otherwise indicated. 

## ■ **Features** 

- Compact model with a 2-mm-wide slot. 

- PCB mounting type. 

- High resolution with a 0.5-mm-wide aperture. 

## ■ **Absolute Maximum Ratings (Ta = 25** ° **C)** 

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||||||
|---|---|---|---|---|
|0.5±0.05|
|Four, C0.3|
|15|
|Optical|
|axis|
|||
|Wy|-|Tl|!|ob|
|re|15 PLE|lta|
|Four, 0.5|
|Four, 0.25|
|tI|||ee+|||
|fey|Cross section AA|
|Internal Circuit|
|K|C|Unless otherwise specified, the|
|tolerances are as shown below.|
|A|E|Dimensions           Tolerance|
|3 mm max.|±0.3|
|Terminal No.      Name|
|3 < mm ≤ 6|±0.375|
|A|Anode|
|6 < mm ≤ 10|±0.45|
|K|Cathode|
|10 < mm ≤ 18|±0.55|
|C|Collector|
|E|Emitter|18 < mm ≤ 30|±0.65|

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|||||
|---|---|---|---|
|Item|Symbol|Rated value|
|Emitter|Forward current|IF|50 mA|
|(see note 1)|
|Pulse forward current|IFP|1 A|
|(see note 2)|
|Reverse voltage|VR|4 V|
|Detector|Collector–Emitter|VCEO|30 V|
|voltage|
|Emitter–Collector|VECO|---|
|voltage|
|Collector current|IC|20 mA|
|Collector dissipation|PC|100 mW|
|(see note 1)|
|Ambient tem-|Operating|Topr|–25°C to 85°C|
|perature|Storage|Tstg|–30°C to|
|100°C|
|Soldering temperature|Tsol|260°C|
|(see note 3)|

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- **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 

   **2.** The pulse width is 10 μs maximum with a frequency of 100 Hz. 

   **3.** Complete soldering within 10 seconds. 

■ **Electrical and Optical Characteristics (Ta = 25** ° **C)** 

~~GO~~ **Item Symbol Value Condition Emitter Forward voltage** VF 1.2 V typ., 1.5 V max. IF = 30 mA ~~po~~ **Reverse current** IR 0.01 μA typ., 10 μA max. VR = 4 V ~~———SGO~~ **Peak emission wavelength** λP 940 nm typ. ~~ee~~ IF = 20 mA **Detector Light current** IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V **Dark current** ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx **Leakage current** ILEAK ----- ~~esQQ QC~~ **Collector–Emitter saturated voltage** VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA ~~SSSQR~~ **Peak spectral sensitivity wavelength** λP ~~QO~~ 850 nm typ. VCE = 10 V ~~Le~~ **Rising time** ~~QC~~ tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA **Falling time** tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA ~~DP CD~~ 

**EE-SX1018** Photomicrosensor (Transmissive) 

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## ■ **Engineering Data** 

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**----- Start of picture text -----**<br>
Forward Current vs. Collector  Forward Current vs. Forward  Light Current vs. Forward Current<br>Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical)<br>60 150 60 to<br>Ta = 25°C<br>IF VCE = 10 V<br>Pett | Pee EE /<br>Ta = −30°C<br>PEN PC TE Ta = 25°C MC) ceeeEer ye<br>; ee Ta = 70°C | Coo<br>;NAL OTE NAEP) 0 EREER ee<br>\ ; Ih aan<br>zoNL PLL AR<br>TET,tNNei 20LE)PL| eaePitRFtAT<br>Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA)<br>Light Current vs. Collector − Emitter  Relative Light Current vs. Ambi- Dark Current vs. Ambient<br>Voltage Characteristics (Typical) ent Temperature Characteristics  Temperature Characteristics<br>(Typical) (Typical)<br>10i Ta = 25°C IF = 50 mA = 120 IVFCE= 20 mA  = 5 V 10.000 eer—.———-————_ 0 VCElx = 10 V gE<br>IF = 40 mA<br>,a cs See ===-===---==<br>(a IF = 30 mA | t00 sos ee<br>Hoo aPpaGnNe =ssannscaeee<br>ies Sa wt aN (Se<br>IF = 20 mA<br>IF = 10 mA<br>e er PTT) eee<br>1 S|<br>POE =<br>ty) Collector 1 2 − 3 Emitter voltage V 4 5 6 7 8 CE 9  (V) 10 05 Ambient temperature Ta ( -20 0 20 40 60 80 °C) 100 0.001Ee Ambient temperature Ta (°C) 0<br>Response Time vs. Load Resist- Sensing Position Characteristics  Sensing Position Characteristics<br>(Typical) (Typical)<br>ance Characteristics (Typical)<br>0 aeSS | VTa = 25CC = 5 V °C 100120 Ta = 25IVFCE= 20 mA  = 10 V °C   100120 Ta = 25IVFCE= 20 mA  = 10 V °C<br>(Center of<br>optical axis)<br>80<br>Pot Pt Vf 2 60 d -<br>Cer © iil 40 \ ll<br>a | |<br>err 20 20<br>0.01(LEMEi O4 Ty| 1 |10 ; PitO05 -025 0A025 |05 O75| dy10 0−2.0 PF) −1.5 −1.0 tf −0.5 iY 0 0.5 \ yt 1.0 1.5 2.0<br>Load resistance RL (kΩ) Distance d (mm) Distance d (mm)<br>Response Time Measurement<br>Circuit<br>Input —!F Le<br>—t<br>90 %<br>Output ° 10 %<br>tr tf<br>Input iM vec<br>=k|<br>Output<br> (mW)  (mA)<br> (mA)F C F  (mA)L<br>Light current  I<br>Forward current  I<br>Forward current  I<br>Collector dissipation P<br> (%)<br>L<br> (mA)Light current  IL  (nA)Dark current   ID<br>Relative light current  I<br> (%)<br>s)  (%) L<br>μ L<br>(Center of optical axis)<br>Relative light current I<br>Response time tr, tf ( Relative light current  I<br>**----- End of picture text -----**<br>


**EE-SX1018** Photomicrosensor (Transmissive) 

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