EE-SX484

## **Photomicrosensor (Transmissive) EE-SX384/-SX484** 

**Be sure to read** _**Precautions**_ **on page 25.** 

## ■ **Dimensions** 

**Note:** All units are in millimeters unless otherwise indicated. 

## ■ **Features** 

- Incorporates an IC chip with a built-in detector element and amplifier. 

- Incorporates a detector element with a built-in temperature compensation circuit. 

- A wide supply voltage range: 4.5 to 16 VDC 

- Directly connects with C-MOS and TTL. 

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0.5 0.5<br>eAah 5.5 BKqi  A “4 8 BHAhi 5.5<br>7 min. Five, 0.5<br>Five, 0.25<br>2.5<br>1.25 1.25<br>Cross section BB |__g — Cross section AA<br>Internal Circuit<br>K O O V<br>0<br>A Leet G<br>Terminal No.            Name<br>A     Anode<br>K     Cathode<br>V     Power supply<br> (Vcc) Unless otherwise specified,<br>the tolerances are ±0.2 mm.<br>O     Output (OUT)<br>G     Ground (GND)<br>**----- End of picture text -----**<br>


- High resolution with a 0.5-mm-wide sensing aperture. 

- Dark ON model (EE-SX384) 

- Light ON model (EE-SX484) 

## ■ **Absolute Maximum Ratings (Ta = 25** ° **C)** 

|**Item**|**Item**|**Symbol**|**Rated value**|
|---|---|---|---|
|**Emitter**|**Forward current**|IF|50 mA<br>(see note 1)|
||**Reverse voltage**|VR|4 V|
|**Detector**<br>**Ambient tem-**|**Power supply volt-**<br>**age**|VCC|16 V|
||**Output voltage**|VOUT|28 V|
||**Output current**|IOUT|16 mA|
||**Permissible output**<br>**dissipation**<br>**Operating**|POUT<br>Topr|250 mW (see<br>note 1)<br>–40°C to 75°C|
|**perature**|**Operating**<br>**Storage**|p<br>Tstg|–40°C to 85°C|
|**Soldering temperature**||Tsol|260°C<br>(see note 2)|



- **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 

   **2.** Complete soldering within 10 seconds. 

## ■ **Electrical and Optical Characteristics (Ta = 25** ° **C)** 

|**Item**<br>~~Gn~~<br>~~ee Se~~|**Item**<br>~~Gn~~<br>~~ee Se~~|**Symbol**<br>~~Gn~~<br>~~Se~~|**Value**<br>~~Ge~~<br>~~GO~~|**Condition**<br>~~Ge~~<br>~~GO~~|
|---|---|---|---|---|
|**Emitter**<br>~~i~~<br>~~SS=———~~|**Forward voltage**<br>~~ee Se~~<br>~~i~~|VF<br>~~Se~~|1.2 V typ., 1.5 V max.<br>~~GO~~|IF= 20 mA<br>~~GO~~|
||**Reverse current**<br>~~ee Se~~<br>~~i~~|IR<br>~~Se~~|0.01μA typ., 10μA max.<br>~~GO~~|VR= 4 V<br>~~GO~~|
||**Peak emission wave-**<br>**length**<br>~~i~~<br>~~SS=———~~|λP<br>~~SS=———~~|940 nm typ.<br>~~SS=———~~|IF= 20 mA<br>~~SS=———~~|
|**Detector**<br>~~SS=———~~|**Low-level output volt-**<br>**age**<br>~~SS=———~~|VOL<br>~~SS=———~~|0.12 V typ., 0.4 V max.<br>~~SS=———~~|VCC= 4.5 to 16 V, IOL= 16 mA, IF= 0 mA (EE-SX384),<br>IF= 8 mA (EE-SX484)<br>~~SS=———~~|
||**High-level output volt-**<br>**age**<br>~~SS=———~~|VOH<br>~~SS=———~~|15 V min.<br>~~SS=———~~|VCC= 16 V, RL= 1 kΩ, IF= 8 mA (EE-SX384), IF= 0 mA<br>(EE-SX484)<br>~~SS=———~~|
||**Current consumption**<br>~~SS=———~~|ICC<br>~~SS=———~~|3.2 mA typ., 10 mA max.<br>~~SS=———~~|VCC= 16 V<br>~~SS=———~~|
||**Peak spectral sensitivi-**<br>**ty wavelength**<br>~~SS=———~~|λP<br>~~SS=———~~|870 nm typ.<br>~~SS=———~~|VCC= 4.5 to 16 V<br>~~SS=———~~|
|**LED current when output is OFF**<br>~~SS=———~~<br>~~es~~||IFT<br>~~SS=———~~<br>~~es~~<br>~~sD~~|3 mA typ., 8 mA max.<br>~~SS=———~~<br>~~es~~<br>~~(OG~~|VCC= 4.5 to 16 V<br>~~SS=———~~<br>~~es~~<br>~~(OG~~|
|**LED current when output is ON**<br>~~es~~<br>~~pO~~<br>~~sD~~|||||
|**Hysteresis**<br>~~sD~~<br>~~QQ~~||ΔH<br>~~sD~~<br>~~QQ~~|15% typ.<br>~~(OG~~<br>~~QQ~~|VCC= 4.5 to 16 V (see note 1)<br>~~(OG~~<br>~~GO~~|
|**Response frequency**<br>~~sD~~<br>~~QQ~~<br>~~sD~~||f<br>~~sD~~<br>~~QQ~~<br>~~sD~~|3 kHz min.<br>~~(OG~~<br>~~QQ~~<br>~~(OG~~|VCC= 4.5 to 16 V, IF= 15 mA, IOL= 16 mA (see note 2)<br>~~(OG~~<br>~~GO~~<br>~~(OG~~|
|**Response delay time**<br>~~QQ~~<br>~~sD~~<br>~~GQ~~||tPLH(tPHL)<br>~~QQ~~<br>~~sD~~<br>~~GQ~~|3μs typ.<br>~~QQ~~<br>~~(OG~~<br>~~GQ~~|VCC= 4.5 to 16 V, IF= 15 mA, IOL= 16 mA (see note 3)<br>~~GO~~<br>~~(OG~~<br>~~GO~~|
|**Response delay time**<br>~~sD~~<br>~~GQ~~||tPHL(tPLH)<br>~~sD~~<br>~~GQ~~|20μs typ.<br>~~(OG~~<br>~~GQ~~|VCC= 4.5 to 16 V, IF= 15 mA, IOL= 16 mA (see note 3)<br>~~(OG~~<br>~~GO~~|



**EE-SX384/-SX484** Photomicrosensor (Transmissive) 

128 

- **Note:** 1. Hysteresis denotes the difference in forward LED current value, expressed in percentage, calculated from the respective forward LED currents when the photo IC in turned from ON to OFF and when the photo IC in turned from OFF to ON. 

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2. The value of the response frequency is measured<br>by rotating the disk as shown below.<br>;<br>—  @ .<br>2.1 mm<br>~4 400° a<br>0.5 mm Disk<br>a? 0.5 mm<br>**----- End of picture text -----**<br>


3. The following illustrations show the definition of response delay time. The value in the parentheses applies to the EESX484. 

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Input —» t ry) OutputInput<br>Output —~ t 0<br>tein teu. tPHL<br>EE-SX384 EE-SX484<br>**----- End of picture text -----**<br>


## ■ **Engineering Data** 

**Note:** The values in the parentheses apply to the EE-SX484. 

## **Forward Current vs. Collector Dissipation Temperature Rating** 

## **Forward Current vs. Forward Voltage Characteristics (Typical)** 

**LED Current vs. Supply Voltage (Typical)** 

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 (mW)<br>C<br>Output allowable dissipation P<br>**----- End of picture text -----**<br>


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Ta = 25°C<br>50 260 50 6 I RL = 1 k Iez Ω<br>Ta = −30°C<br>40 PEIN | | aa Ta = 25°C ]Hf | 8 IFT OFF (IFT ON) [¥=8>}+ci R. veeour<br>Ta = 70°C<br>\ 200 40 q fro<br>. i] ‘ a<br>ane . j EEE<br>IFT ON (IFT OFF)<br>Bee SaeGe ine TOUTE<br>0 0 o OA 0PE<br>-40 -20 0 20 40 60 80 100 fe) 02 04 06 O08 1 12 14 16 18 0 2 4 6 8 10 12 14 16<br>Ambient temperature Ta (°C) Forward voltage VF (V) Supply voltage VCC (V)<br>LED Current vs. Ambient Temper- Low-level Output Voltage vs.  Low-level Output Voltage vs. Am-<br>ature Characteristics (Typical) Output Current (Typical) bient Temperature Characteristics<br>(Typical)<br>67 VRCCL = 330  = 5 VΩ eeSseeaeesReeeS eeesWaae Ta = 25VIFCC= 0 mA (15 mA)  = 5 V °C 0.18oe02 lg Icc R. ourver V IFCC = 0 mA (15 mA) = 5 V<br>s IFT OFF (IFT ON) ot ptTTTTTTTT an Jew BeenP<br>4 —_a hteS OU ||A | oneEEEPta oeaee SnOa ee<a se oeSO Gl 012 IOL = 16 mA BEeeD|[|| Bp aa<br>. os a a 0.4 eee<br>2a IFT ON (IFT OFF) | zy na aLot 1 ETEETEe<br>; ,ice Veo aa ee oe ee oe :<br>hu q rs ee ee ve:cs 44 0.04 ——+} ——<br>1 our a pr TI | IOL = 5 mA PELE<br>‘GND<br>an | Joon Po our 0.02<br>,-60 -40 -20 i) 20 40 60 80 ool 1 LL TET10 mal100 ot-50 -40 -30 |-20-10 0 10 20 30Baaen40 50 60 70 80<br>Ambient temperature Ta (°C) Output current IC (mA) Ambient temperature Ta (°C)<br>Current Consumption vs. Supply  Response Delay Time vs. Forward  Repeat Sensing Position<br>Voltage (Typical) Current (Typical) Characteristics (Typical)<br>Ta = 25°C VCC = 5 V  Ta = 25°C<br>[TTI  IF = 0 mA (15 mA) . Ta = 25RL = 330 °C Ω Ft fl VIFCC = 15 mA = 5 V<br>coon V(EE-SX3OUT @@) hs n = repeat 20 timesRL = 330 Ω<br>ot}| | ter]— .TL V(EE-SX4OUT @@) +—=eae Es oftON : d1 = 0.01 mm<br>Center of optical axis<br>162 PiattCCULt eT 2015PIVSCnweTPHLre(IPLH) lk kee 46_—Hy 7a --0-+|<br>1 te lee 10 x our x i<br>A vec VI freer 7 Yy<br>05 un N GNO fro Hy<br>3 ro free:: 55PTaeeSEEontT° JHy: | [|<br>i 2 4 6 8 0 12 14 16 ce 5 10 15 20 25 30 35 40. 04 03 02 01 0 01 02 03 04 05 06<br>Supply voltage VCC (V) Forward current IF (mA) Distance d (mm)<br>C<br> (mA)<br> (mA) F  (mA)<br>F FT<br>LED current  I<br>Forward current  I<br>Forward current  I<br>Output allowable dissipation P<br> (V)  (V)<br>OL OL<br> (mA)<br>FT<br>LED current  I<br>Low level output voltage  V Low level output voltage  V<br>s)<br>μ<br> (<br>PLH<br>, t<br>PHL<br>Output transistor<br>Current consumption  Icc (mA)<br>Response delay time t<br>**----- End of picture text -----**<br>


**EE-SX384/-SX484** Photomicrosensor (Transmissive) 

129