EE-SX1161-W11

## **Photomicrosensor (Transmissive) EE-SX1161-W11** 

**Be sure to read** _**Precautions**_ **on page 24.** 

## ■ **Dimensions** 

**Note:** All units are in millimeters unless otherwise indicated. 

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9.4±0.2 Optical axis<br>23.7±0.2<br>5±0.2<br>Four, C0.4<br>2±0.15<br>Emitter Detector<br>12.95±0.25<br>1.12.1±0.1 Sensing window3.2±0.150.2 B A Optical axis4.55 1.4±0.2 14.2 1.1±0.1 ±0.15 Four, R1.6Four, R1<br>2.1<br>6.35±0.25<br>10.85±0.1 12.5±0.2 9.7±0.2 10.85±0.1<br>4.5 3.2±0.25<br>Two, 2.65<br>3.1<br>610MIN.<br>E 4 C B A K A<br>Cross section B-B 3.55 Cross section A-A<br>11.4±0.2<br>**----- End of picture text -----**<br>


## **Internal Circuit** 

|||C<br>E|**Dimensions          Tolerance**<br>3 mm max.<br>±0.3<br>3<mm≤6<br>±0.375<br>6<mm≤10<br>±0.45<br>10<mm≤18<br>±0.55<br>18<mm≤30<br>±0.65<br>Unless otherwise specified, the<br>tolerances are as shown below.|**Dimensions          Tolerance**<br>3 mm max.<br>±0.3<br>3<mm≤6<br>±0.375<br>6<mm≤10<br>±0.45<br>10<mm≤18<br>±0.55<br>18<mm≤30<br>±0.65<br>Unless otherwise specified, the<br>tolerances are as shown below.|
|---|---|---|---|---|
|||||**Tolerance**|
|||||±0.3|
||**al**<br>**Col**|**or**<br>**Name**|||
|||||±0.375|
||<br>Red|<br>Anode|||
|||||±0.45|
||Blac|k Cathode|||
|||||±0.55|
||Whit|e Collector|||
||Gre|en Emitter||±0.65|



## ■ **Features** 

- Dust-proof model. 

- Pre-wired Sensors (AWG28). 

- Solder-less lead wire connection to increase reliability. 

## ■ **Absolute Maximum Ratings (Ta = 25**  **C)** 

||**Item**|**Symbol**|**Rated value**|
|---|---|---|---|
|**Emitter**|**Forward current**|IF|50 mA<br>(see note 1)|
||**Pulse forward cur-**<br>**rent**|IFP|1 A<br>(see note 2)|
||**Reverse voltage**|VR|4 V|
|**Detector**|**Collector–Emitter**<br>**voltage**|VCEO|30 V|
||**Emitter–Collector**<br>**voltage**|VECO|5 V|
||**Collector current**<br>**Collector dissipa-**<br>**tion**|IC<br>PC|20 mA<br>100 mW<br>(see note 1)|
|**Ambient tem-**<br>**perature**|**Operating**|Topr|–25C to 80C|
||**Storage**|Tstg|–25C to 85C|



- **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25  C. 

   **2.** The pulse width is 10  s maximum with a frequency of 100 Hz. 

   **3.** If you mount the Sensor with screws, use M3 screws, and flat washers and use a tightening torque of 0.5 N·m max. 

## ■ **Electrical and Optical Characteristics (Ta = 25**  **C)** 

||**Item**|**Symbol**|**Value**|**Condition**|
|---|---|---|---|---|
|**Emitter**<br>**F**<br> <br>**P**|**orward voltage**<br>V|F<br>|1.2 V typ., 1.5 V max.|IF= 30 mA|
||**Reverse current**<br>IR||0.01A typ., 10A max.|VR= 4 V|
||**eak emission wavelength**<br>P||940 nm typ.|IF= 20 mA|
|**Detector**<br>**L**<br> <br>**L**<br> <br>**a**<br>**P**<br>**l**|**ight current**<br>IL||0.625 mA min.|IF= 20 mA, VCE= 10 V|
||**Dark current**<br>ID||2 nA typ., 200 nA max.|VCE= 10 V, 0lx|
||**eakage current**<br>IL|EAK<br>|---|---|
||**Collector–Emitter saturated volt-**<br>**ge**<br>V|CE(sat)<br>|0.15 V typ., 0.4 V max.|IF= 20 mA, IL= 0.1 mA|
||**eak spectral sensitivity wave-**<br>**ength**<br>P||850 nm typ.|VCE= 10 V|
|**Rising time**|tr||4s typ.|VCC= 5 V, RL= 100, IL= 5 mA|
|**Falling time**|tf||4s typ.|VCC= 5 V, RL= 100, IL= 5 mA|



**EE-SX1161-W11** Photomicrosensor (Transmissive) 

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## ■ **Engineering Data** 

**Forward Current vs. Collector Dissipation Temperature Rating** 

**Forward Current vs. Forward Voltage Characteristics (Typical)** 

**Light Current vs. Forward Current Characteristics (Typical)** 

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60 150 22<br>IF 20 Ta = 25 VCE = 10 V ° C<br>50 PTT TT) CLT 18 EERE Uy<br>PC 16<br>40 CONT 100 “of Ta = 25Ta = 70 ee °° CC  T] = 14 P|FREER tt Va<br>12<br>30 TON fo LE S400<br>K\ ea ne en H | D] =  EEE 10 Pitt<br>20 FNL 50 TEL) 8 EeeTy tt<br>6<br>10 PFN\ 7 ep 4 fi22s| Ye | | |<br>2<br>0-40 PEt -20 0 20 | 40 Ty 60 80 1000 5|2 O4 06 O8 12044 16°18 00 ZOE 10 20 EEE 30 40 50<br>Ambient temperature Ta ( ° C) Forward voltage VF (V) Forward current IF (mA)<br>Light Current vs . Collecto r— Emitter Relative Light Current vs.  Dark Current vs. Ambient<br>Voltage Characteristics (Typical) Ambient Temperature Character- Temperature Characteristics<br>istics (Typical) (Typical)<br>26<br>24 Ta = 25 ° C IVFCE= 20 mA  = 5 V 0 VCE l x = 10 V<br>22 Por aa 10 gr —— E S<br>20 PP , som———————SMascs==Zz<br>IF = 50 mA<br>1816 assesa IF = 40 mA acaaI<br>14 i yaaa ------- ===<br>12 ec I F = 30 mA 100 ; ee<br>10 (fo v0 === >.<br>8 |  Zo I F = 20 mA w an \————2)naaae=s=>2=——=See<br>6<br>4 (SSS IF  ee = 10 mA Pi | 09er<br>2 fo ” 0 01 Leppert<br>0 FL are<br>0 1 2 3 4 5 6 7 8 9 10 Mery maeaeeacsaes<br>Collecto r— Emitter voltage Vce (V) Ambient temperature Ta ( -20 fa) 20 4 60 ° 80 C) 1c 200155 Ambient temperature Ta ( -20 -10 9 10 20 30 40 50 #9 ° 70 C) BO oo<br>Response Time vs. Load Resis- Sensing Position Characteristics  Sensing Position Characteristics<br>tance Characteristics (Typical) (Typical) (Typical)<br>120 120<br>ae ae Ta = 25VCC = 5 V  ° C i   100 PT] | td VTa = 25IFCE= 20 mA  = 10 V  ° C   100 PTL | dd. Ta = 25IVFCE= 20 mA  = 10 V  ° C<br>_2 eoF4LCM0 a Til 80 s (Center of optical axis) d 80 \<br>COTE TT PTT EN ee | ELLEN<br>7 a||| ne | 7<br>d<br>| apes 60 60 J<br>40 40<br>3 Beit see sae ! \ Wi<br>ae eeeT 20 PTT LA 20 PTT TT<br>SSa ae '<br>CCCBull 0-2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5 0-2.5 -2.0 -1.5 -1.0 -0.5 0 0.5 N 1.0 1.5 2.0 2.5<br>O01 04 1 10<br>Distance d (mm)<br>Load resistance Ri (kQ) Distance d (mm)<br>Response Time Measurement<br>Circuit<br>Input<br>ee nn —t<br>90 %<br>Output 10 %<br>te ti<br>Input —Www— * yee<br>Output<br> (mW)  (mA)<br>C F<br> (mA)<br>F  (mA)<br>L<br>Forward current  I Light current  I<br>Forward current  I<br>Collector dissipation P<br> (%)<br>L<br> (mA)<br>L  (nA)<br>Light current  I D<br>Dark current   I<br>Relative light current  I<br> (%)<br>L<br> (%)<br>L<br>(Center of optical axis)<br>Relative light current  I<br>Relative light current  I<br>**----- End of picture text -----**<br>


**EE-SX1161-W11** Photomicrosensor (Transmissive) 

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