EE-SX1070

## **Photomicrosensor (Transmissive) EE-SX1070** 

**Be sure to read** _**Precautions**_ **on page 25.** 

## ■ **Dimensions** 

**Note:** All units are in millimeters unless otherwise indicated. 

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17.7<br>6±0.2<br>0.5±0.1<br>Two, C1 8 [+0.2] −0.1<br>Optical  2.2<br>10 −0.20 axis<br>7.5±0.2<br>2.5<br>6.2<br>Two, 0.7±0.1<br>Four, 0.5 Four, 0.25<br>(13.8) (2.5)<br>(2.5) 2.35±0.1 5.2±0.1<br>K C<br>A E<br>6.6±0.1 Two, 0.7±0.1 dia.<br>JAPAN<br>**----- End of picture text -----**<br>


## **Internal Circuit** 

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K C Unless otherwise specified, the<br>tolerances are as shown below.<br>A E Dimensions          Tolerance<br>3 mm max. ±0.3<br>Terminal No.      Name<br>3 < mm ≤ 6 ±0.375<br>A     Anode<br>6 < mm ≤ 10 ±0.45<br>K     Cathode<br>10 < mm ≤ 18 ±0.55<br>C     Collector<br>E     Emitter 18 < mm ≤ 30 ±0.65<br>**----- End of picture text -----**<br>


## ■ **Features** 

- Wide model with a 8-mm-wide slot. 

- PCB mounting type. 

- High resolution with a 0.5-mm-wide aperture. 

## ■ **Absolute Maximum Ratings (Ta = 25** ° **C)** 

||**Item**|**Symbol**|**Rated value**|
|---|---|---|---|
|**Emitter**|**Forward current**|IF|50 mA<br>(see note 1)|
||**Pulse forward cur-**<br>**rent**|IFP|<br>1 A<br>(see note 2)|
||**Reverse voltage**|VR|4 V|
|**Detector**|<br>**Collector–Emitter**<br>**voltage**|VCEO|30 V|
||**Emitter–Collector**<br>**voltage**|VECO|---|
||**Collector current**|IC|20 mA|
||**Collector dissipa-**<br>**tion**|PC|100 mW<br>(see note 1)|
|**Ambient tem-**<br>**perature**|**Operating**|Topr|–25°C to 95°C|
||**Storage**|Tstg|–30°C to<br>100°C|
|**Soldering temperature**||Tsol|260°C<br>(see note 3)|



- **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 

   **2.** The pulse width is 10 μs maximum with a frequency of 100 Hz. 

   **3.** Complete soldering within 10 seconds. 

## ■ **Electrical and Optical Characteristics (Ta = 25** ° **C)** 

||**Item**|**Symbol**|**Value**|**Condition**|
|---|---|---|---|---|
|**Emitter**|**Forward voltage**|VF|1.2 V typ., 1.5 V max.|IF= 30 mA|
||**Reverse current**|IR|0.01μA typ., 10μA max.|VR= 4 V|
||**Peak emission wavelength**|λP|940 nm typ.|IF= 20 mA|
|**Detector**|**Light current**|IL|0.5 mA min., 14 mA max.|IF= 20 mA, VCE= 10 V|
||**Dark current**|ID|2 nA typ., 200 nA max.|VCE= 10 V, 0lx|
||**Leakage current**|ILEAK|---|---|
||**Collector–Emitter saturated volt-**<br>**age**|VCE(sat)|0.1 V typ., 0.4 V max.|IF= 20 mA, IL= 0.1 mA|
||**Peak spectral sensitivity wave-**<br>**length**|λP|850 nm typ.|VCE= 10 V|
|**Rising time**||tr|4μs typ.|VCC= 5 V, RL= 100Ω, IL= 5 mA|
|**Falling time**||tf|4μs typ.|VCC= 5 V, RL= 100Ω, IL= 5 mA|



**EE-SX1070** Photomicrosensor (Transmissive) 

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■ **Engineering Data** 

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Forward Current vs. Collector<br>Dissipation Temperature Rating<br>60 150<br>IFF<br>50 PT TTT Ty<br>40 PTT PCC ; 100<br>302020 LNP| TE INN INN 50<br>10 aNANA<br>0−40−4040 PO −2020 0 20 40 60 80 10000<br>Ambient temperature Ta (°C)°C)C)<br>Light Current vs. Collector − Emitter<br>Voltage Characteristics (Typical)<br>Ta = 25°C°CC<br>5ELLEELLE IFF = 50 mA<br>paaeaeTTTTTT IFF = 40 mA |<br>fe e<br>IFF = 30 mA<br>r p<br>IFF = 20 mA<br>a e IFF = 10 mA<br>CTT|__||__| +<br>o 1 2 3 4 5 6 7 8 9 10<br>Collector−Emitter voltage VCE (V)−Emitter voltage VCE (V)Emitter voltage VCE (V)CE (V) (V)<br> (mW)C<br> (mA) C<br>F<br>Forward current  I<br>Collector dissipation P<br> (mA)<br>L<br>Light current  I<br>**----- End of picture text -----**<br>


**Forward Current vs. Forward Voltage Characteristics (Typical)** 

**Light Current vs. Forward Current Characteristics (Typical)** 

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60 150<br>Ta = 25°C<br>IFF VCE = 10 V<br>50 PT TTT Ty TELTT | CAAA<br>Ta = −30°C<br>40 PTT PCC ; 100 ae Ta = 25°C me) CeeeeRE EEJ<br>Ta = 70°C<br>P| TE INN INN °[| HHL PP<br>302020 LNP| 50 neeen| 4<br>ae Peete<br>10 aNANA IPS) peer<br>0−40−4040 PO −2020 0 20 40 60 80 10000 ;;Ee)| PerretEee Fe<br>Ambient temperature Ta (°C)°C)C) 0 02 04 06 O8 YW1 12 #14 16 #18 sefe 10 | 20| tT30 40 50<br>Forward voltage VF (V) Forward current IF (mA)<br>Light Current vs. Collector − Emitter  Relative Light Current vs. Ambi- Dark Current vs. Ambient<br>Voltage Characteristics (Typical) ent Temperature Characteristics  Temperature Characteristics<br>(Typical) (Typical)<br>Ta = 25°C°CC IF = 20 mA  VCE = 10 V<br>VCE = 5 V 0 lx<br>5ELLEELLE IFF = 50 mA 120110rT]ane 10,0001,000s-55...--pees cersy<br>paaeaeTTTTTT IFF = 40 mA | 100 oeSS a SS SSSa<br>fe e IFF = 30 mA lH L SSsease7seaeeeSS SS SSee<br>r p TAT eee<br>IFF = 20 mA<br>a e IFF = 10 mA Sa==<br>CTT|__||__| + .70TT ry Masseeseoseoe001 fetec<br>o 1 2 3 4 5 6 7 8 9 10 -40 = --20 0 20 40 60 80 = 100 “".30 -20 -10 0 10 20 30 40 50 60 70 80 90<br>Collector−Emitter voltage VCE (V)−Emitter voltage VCE (V)Emitter voltage VCE (V)CE (V) (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C)<br>Response Time vs. Load Resist- Sensing Position Characteristics  Sensing Position Characteristics<br>ance Characteristics (Typical) (Typical) (Typical)<br>10,000 aSSSa a Ta = 25VCC = 5 V °C il too120 VTa = 25IFCE= 20 mA  = 10 V °C   100120 ~ Ta = 25IVFCE= 20 mA  = 10 V °C<br>(Center of<br>“FEee ee 80 optical axis) Tort4 80 \ |<br>d<br>ain| ee «PTV TT Pl 60 || | iM eypel a!;<br>= See \ +<br>PE eo<br>40<br>Sea en oO 1s IKI \ lil<br>volatiledel<br>Seer 20 20 \|<br>0.01MIPottO41 1 10 ; Pi}O05 025 0 025ETE05 O75 1.0 0−2.0 P] −1.5 −1.0 Tf −0.5 | 0 0.5 INytd 1.0 1.5 2.0<br>Distance d (mm)<br>Load resistance RL (kΩ) Distance d (mm)<br>Response Time Measurement<br>Circuit<br>Input —J Le<br>7<br>90 %<br>Output 10 %<br>° ft } a t<br>tr tf<br>Input e vec<br>yak<br>Output<br> (mA)  (mW)C  (mA)F<br>F  (mA)<br>L<br>Forward current  I Light current  I<br>Forward current  I<br>Collector dissipation P<br> (%)<br> (mA) L<br>L  (nA)<br>Light current  I D<br>Relative light current  I Dark current   I<br>s)μ  (%)L  (%)<br>L<br>(Center of optical axis)<br>Response time tr, tf ( Relative light current  I<br>Relative light current  I<br>**----- End of picture text -----**<br>


**EE-SX1070** Photomicrosensor (Transmissive) 

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