EE-SX1035

## **Photomicrosensor (Transmissive) EE-SX1035** 

**Be sure to read** _**Precautions**_ **on page 25.** 

## ■ **Dimensions** 

**Note:** All units are in millimeters unless otherwise indicated. 

## ■ **Features** 

- Compact model with a 5.2-mm-wide slot. 

- PCB mounting type. 

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gElisieliol}] = | 6.3 ■<br>ERE<br>| [26.] rs | Emitter<br>1±0.1 1±0.1<br>1±0.1<br>Optical axis<br>0.267 oecos|ye|onitt oe oh B=<br>Detector<br>Four, 0.25 Four, 0.5<br>Cross section AA (9.65) Cross section BB (2.5)<br>AE<br>**----- End of picture text -----**<br>


## ■ **Absolute Maximum Ratings (Ta = 25** ° **C)** 

|**Item**|**Item**|**Symbol**|**Rated value**|
|---|---|---|---|
|**Emitter**|**Forward current**|IF|50 mA<br>(see note 1)|
||**Pulse forward cur-**<br>**rent**|IFP|1 A<br>(see note 2)|
||**Reverse voltage**|VR|4 V|
|**Detector**|**Collector–Emitter**<br>**voltage**|VCEO|30 V|
||**Emitter–Collector**<br>**voltage**|VECO|5 V|
||**Collector current**|IC|20 mA|
||**Collector dissipa-**<br>**tion**|PC|100 mW<br>(see note 1)|
|**Ambient tem-**<br>**perature**<br>~~AE~~<br>~~E~~|**Operating**|Topr|–25°C to 85°C|
||**Storage**|Tstg|–30°C to<br>100°C|
|**Soldering temperature**||Tsol|260°C<br>(see note 3)|



## **Internal Circuit** 

|K||||C|Unless otherwise specified, the|Unless otherwise specified, the|
|---|---|---|---|---|---|---|
||||||tolerances are as shown below.||
|A||||E|**Dimensions          Tolerance**|**Dimensions          Tolerance**|
|**Terminal No.      Name**<br>A<br>K<br>C||||**Terminal No.      Name**<br>Anode<br>Cathode<br>Collector|3 mm max.<br>3<mm≤6<br>6<mm≤10<br>10<mm≤18|±0.2<br>±0.24<br>±0.29<br>±0.35|
|E||||Emitter|18<mm≤30|±0.42|



- **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 

   **2.** The pulse width is 10 μs maximum with a frequency of 100 Hz. 

   **3.** Complete soldering within 10 seconds. 

## ■ **Electrical and Optical Characteristics (Ta = 25** ° **C)** 

- **Item Symbol Value Condition** 

- **Emitter** ~~+~~ **Forward voltage** VF ~~[PT]~~ 1.2 V typ., 1.5 V max. IF = 30 mA **Reverse current** IR 0.01 μA typ., 10 μA max. VR = 4 V **Peak emission wavelength** λP 940 nm typ. IF = 20 mA 

- ~~SSPo a eee~~ **Detector** ~~a~~ **Light current** IL 0.5 mA min. IF = 20 mA, VCE = 10 V ~~I~~ **Dark current** ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx ~~SSS~~ **Leakage current** ~~a~~ ILEAK ----- **Collector–Emitter saturated volt-** VCE (sat) 0.15 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA **age Peak spectral sensitivity wave-** λP 850 nm typ. VCE = 10 V 

- ~~SSS~~ **length Rising time** tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA 

- ~~po~~ **Falling time** tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA ~~nsa~~ 

**EE-SX1035** Photomicrosensor (Transmissive) 

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## ■ **Engineering Data** 

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Forward Current vs. Collector  Forward Current vs. Forward  Light Current vs. Forward Current<br>Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical)<br>Ta = 25°C<br>Toor: IF TE VCE = 10 V<br>. ( eR Ta = −30°C e ee<br>LN PC aa Ta = 25°C | ieeeSa eeeeee<br>Ta = 70°C<br>“0 \ N WT } 7<br>A » fi HAH<br>zoNE ieee: ieee eee eaes<br>°PPP ENGNeen 20lL|) PTTEEETAT<br>Pitt . *° Pe4nneneee<br>oD -20 0 20 40 |60 80 708 %SL)02 04 06 O8 SS 14 #16 18 oneee10 20 ete30 40 50<br>Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA)<br>Light Current vs. Collector − Emitter  Relative Light Current vs. Ambi- Dark Current vs. Ambient<br>Voltage Characteristics (Typical) ent Temperature Characteristics  Temperature Characteristics<br>(Typical) (Typical)<br>Ta = 25°C IVFCE= 20 mA  = 5 V 0 VCElx = 10 V<br>IF = 50 mA<br>a e = ==<br>7 ——_ IF = 40 mA =p ao<br>{ert a<br>seo(is= IF = 30 mA 10090 >a = = === = >tl===mt<br>eee aa 1fale<br>T L 2S SS<br>| m ae IF = 20 mA 20yana<br>ol])eCPE ee I EEE F = 10 mA 70Tr 0.01 SeeS2===SS=eneeglleEEE EE EEE<br>rr a a os ea ae a<br>Collector−Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C)<br>Response Time vs. Load Resist- Sensing Position Characteristics  Sensing Position Characteristics<br>ance Characteristics (Typical) (Typical) (Typical)<br>0.000ae=0 VTa = 25CC = 5 V °C 100120 Ta = 25IVFCE= 20 mA  = 10 V °C   100120 | Ta = 25IVFCE= 20 mA  = 10 V °C<br>SS. os one (Center of optical axis) brian<br>ee ee ee 80 4 80<br>d<br>TNoo « PT WT Ph 60 | | | ly te | 7<br>Set \ *<br>ed ee i” |<br>40<br>eet a «o ll \ lil<br>op cc |||<br>a ea St 20 20<br>0.01aSe 01 1 10 ;PP-1.0 -05 0 05 10EET15 20 0−2.0 FP] −1.5 −1.0 Tt −0.5 INL 0 0.5 t 1.0 1.5 LI 2.0<br>Load resistance RL (kΩ) Distance d (mm)<br>Distance d (mm)<br>Response Time Measurement<br>Circuit<br>Input —J Le<br>—t<br>90 %<br>Output 10 %<br>° ft } ———~t<br>tr tf<br>Input i vec<br>Ly =<br>Output<br> (mA)F  (mW)C  (mA)F  (mA)<br>L<br>Light current  I<br>Forward current  I Collector dissipation P Forward current  I<br> (%)<br>L<br> (nA)<br>D<br> (mA)<br>L<br>Dark current   I<br>Light current  I<br>Relative light current  I<br>s)  (%)<br>μ L  (%)<br>L<br>(Center of optical axis)<br>Response time tr, tf ( Relative light current  I<br>Relative light current  I<br>**----- End of picture text -----**<br>


**EE-SX1035** Photomicrosensor (Transmissive) 

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