EE-SV3

## **Photomicrosensor (Transmissive) EE-SV3 Series** 

**Be sure to read** _**Precautions**_ **on page 25.** 

## ■ **Dimensions** 

**Note:** All units are in millimeters unless otherwise indicated. 

## ■ **Features** 

- High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available. 

- Solder terminal models: 

- EE-SV3/-SV3-CS/-SV3-DS/-SV3-GS 

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Center mark<br>Four,<br>R1 Four, R1<br>tf oe 0.2 ca a i e | a<br>a 10:26'5 (F) boa 7.240262 Cf) bl 2 7.2402<br>Two,  Two,  Four, 0.5<br>Four, 0.25 3.2±0.2 dia.  Four, 1.5 3.2±0.2 dia.<br>7.60.3 holes holes stp 2.54±0.2<br>2.54±0.2<br>Cross section AA Cross section AA<br>ut Model           Aperture (a x b)<br>EE-SV3(-B)     2.1 x 0.5<br>EE-SV3-C(S)    2.1 x 1.0<br>EE-SV3-D(S)    2.1 x 0.2<br>Nobel Internal Circuit Fe == EE-SV3-G(S)    0.5 x 2.1<br>K C<br>Unless otherwise specified, the<br>tolerances are as shown below.<br>A E Dimensions         Tolerance<br>3 mm max. ±0.2<br>Terminal No.      Name<br>3 < mm ≤ 6 ±0.24<br>A     Anode<br>6 < mm ≤ 10 ±0.29<br>K     Cathode<br>10 < mm ≤ 18 ±0.35<br>C     Collector<br>E     Emitter 18 < mm ≤ 30 ±0.42<br>**----- End of picture text -----**<br>


- PCB terminal models 

- EE-SV3-B/-SV3-C/-SV3-D/-SV3-G 

## ■ **Absolute Maximum Ratings (Ta = 25** ° **C)** 

|**Item**|**Item**|**Symbol**|**Rated value**|
|---|---|---|---|
|**Emitter**|**Forward current**|IF|50 mA<br>(see note 1)|
||**Pulse forward**<br>**current**|IFP|1 A<br>(see note 2)|
||**Reverse voltage**|VR|4 V|
|**Detector**|**Collector–Emit-**<br>**ter voltage**|VCEO|30 V|
||**Emitter–Collec-**<br>**tor voltage**|VECO|---|
||**Collector current**|IC|20 mA|
||**Collector dissipa-**<br>**tion**|PC|100 mW<br>(see note 1)|
|**Ambient tem-**<br>**perature**|**Operating**|Topr|–25°C to<br>85°C|
||**Storage**|Tstg|–30°C to<br>100°C|
|**Soldering temperature**||Tsol|260°C<br>(see note 3)|



- **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 

   **2.** The pulse width is 10 μs maximum with a frequency of 100 Hz. 

   **3.** Complete soldering within 10 seconds. 

|**Item**<br>~~a~~<br>~~PO~~<br>~~—“—s—sS~~|**Item**<br>~~a~~<br>~~PO~~<br>~~—“—s—sS~~|**Symbol**<br>~~—“—s—sS~~<br>~~ee~~|**Value**<br>~~———Ee~~<br>~~$$;~~|**Value**<br>~~———Ee~~<br>~~$$;~~|**Value**<br>~~———Ee~~<br>~~$$;~~|**Value**<br>~~———Ee~~<br>~~$$;~~|**Condition**<br>|<br>|
|---|---|---|---|---|---|---|---|
||||**EE-SV3(-B)**<br>~~———Ee~~<br>~~$$;~~<br>~~ee~~|**EE-SV3-C(S)**<br>~~———Ee~~<br>~~$$;~~<br>|**EE-SV3-D(S)**<br>~~———Ee~~<br>~~$$;~~<br>|**EE-SV3-G(S)**<br>~~———Ee~~<br>~~$$;~~<br>||
|**Emitter**<br>~~a~~<br>~~PO~~<br>~~——~~|**Forward voltage**<br>~~a~~<br>~~PO~~<br>~~—“—s—sS~~<br>~~——~~|VF<br>~~—“—s—sS~~<br>~~ee~~<br>|1.2 V typ., 1.5 V max.<br>~~———Ee~~<br>~~eeeee~~<br>||||IF= 30 mA<br>~~eee~~<br>|
||**Reverse current**<br>~~PO~~<br>~~—“—s—sS~~<br>~~——~~|IR<br>~~—“—s—sS~~<br>~~ee~~<br>|0.01μA typ., 10μA max.<br>~~eeeee~~<br>||||VR= 4 V<br>~~eee~~<br>|
||**Peak emission wave-**<br>**length**<br>~~——~~|λP<br><br>|940 nm typ.<br>~~eee~~<br>||||IF= 20 mA<br>~~eee~~<br>|
|**Detector**<br>~~===~~|**Light current**<br>~~===~~|IL<br>~~===~~|0.5 to 14 mA<br>~~===~~|1 to 28 mA<br>~~===~~|0.1 mA min.<br>~~===~~|0.5 to 14 mA<br>~~===~~|IF= 20 mA,<br>VCE= 10 V<br>~~===~~|
||**Dark current**<br>~~===~~|ID<br>~~===~~|2 nA typ., 200 nA max.<br>~~===~~||||VCE= 10 V,<br>0lx<br>~~===~~|
||**Leakage current**<br>~~===~~|ILEAK<br>~~===~~|---<br>~~===~~||||---<br>~~===~~|
||**Collector–Emitter satu-**<br>**rated voltage**<br>~~===~~|VCE(sat)<br>~~===~~|0.1 V typ., 0.4 V max.<br>~~===~~||---<br>~~===~~|0.1 V typ.,<br>0.4 V max.<br>~~===~~|IF= 20 mA,<br>IL= 0.1 mA<br>~~===~~|
||**Peak spectral sensitivity**<br>**wavelength**<br>~~===~~|λP<br>~~===~~|850 nm typ.<br>~~===~~||||VCE= 10 V<br>~~===~~|
|**Rising time**<br>~~Ca~~||tr<br>~~Ca~~|4μs typ.<br>~~Ca~~||||VCC= 5 V,<br>RL= 100Ω,<br>IL= 5 mA<br>~~Ca~~|
|**Falling time**<br>~~Ca~~||tf<br>~~Ca~~|4μs typ.<br>~~Ca~~|||||



**EE-SV3 Series** Photomicrosensor (Transmissive) 

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## ■ **Engineering Data** 

**Forward Current vs. Collector Dissipation Temperature Rating** 

**Forward Current vs. Forward Voltage Characteristics (Typical)** 

**Light Current vs. Forward Current Characteristics (Typical)** 

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. IF ” “<br>0PT tt Py PEt dy dy Ta = −30°C−30°C30°C°CC<br>“PN, PC an Ta = 25°C°CC i<br>\ “ Ta = 70°C°CC Hy<br>° H<br>osSERENE\ ° I |<br>LyPoP 20<br>. Seeee ian<br>;+40Pi-20 90 20 40 60 80N 100; .;fe)oaaeD)02;fe)oaaeD)02fe)oaaeD)02oaaeD)0202 04 06 O08 VW,11  aan1212 14 16<br>Ambient temperature Ta (°C) Forward voltage VF (V)F (V) (V)<br>Light Current vs. Collector − Emitter  Relative Light Current vs. Ambi-<br>ent Temperature Characteristics<br>Voltage Characteristics (EE-SV3(-B))<br>(Typical)<br>20 Ta = 25°C 120 IFF = 20 mA<br>att tity VCE = 5 VCE = 5 V = 5 V<br>18PPP PE<br>IF = 50 mA<br>( CE 4 140Pi)Pi) tT<br>IF = 40 mA ey | 100 !<br>sob fhe IF = 30 mA — ol —<br>Aor W4<br>|Sr ee IF = 20 mA i “<br>e‘PR ee IF = 10 mA a 70PPPP<br>° Pi ty ~<br>o + 2 3 4 5 6 7 8 9 10 40-20 0 20 40 60 Bo<br>Collector−Emitter voltage VCE (V) °C)<br> (mA)Forward current  IF Collector dissipation P (mW)C  (mA)Forward current  IFForward current  IF<br> (%)<br>L<br> (mA)<br>L<br>Light current  I<br>Relative light current  I<br>**----- End of picture text -----**<br>


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Ta = 25°C<br>“ sE [LTT] VCE = 10 V<br>Py PEt dy dy .wt1H<br>Ta = −30°C−30°C30°C°CC<br>an Ta = 25°C°CC i AfT tt r<br>“ Ta = 70°C°CC Hy tePTE PrZ<br>H See<br>° I | Le: A<br>20 ait| rt<br>Seeee ian EZ<br>.;fe)oaaeD)02;fe)oaaeD)02fe)oaaeD)02oaaeD)0202 04 06 O08 VW,11  aan1212 14 16 18 afinaoOEPA10it [tit] 20 30 tit40<br>Forward voltage VF (V)F (V) (V) Forward current IF (mA)<br>F<br> (mA)<br>L<br> (mA)Forward current  IFForward current  IF Light current  I<br>**----- End of picture text -----**<br>


**Relative Light Current vs. Ambient Temperature Characteristics (Typical)** 120 IFF = 20 mA VCE = 5 VCE = 5 V = 5 V 140Pi)Pi) tT 100 ! ol — W4 “ 70PPPP ~ 40-20 0 20 40 60 Bo 100 Ambient temperature Ta (°C) 

**Dark Current vs. Ambient Temperature Characteristics (Typical)** 

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10,000 pape VCE = 10 V<br>= 0 lx —=====-SST<br>"0 enters speeder<br>SSSvc: etelmspctcbiteea<br>—————SS SSeS =<br>Se<br>j=SSeeeeS="=<br>===|4sse====<br>che ashe<br>0.01 [eeeleet<br>som et tt<br>-30 -20-10 0 10 20 30 40 50 60 70 80<br>Ambient temperature Ta (°C)<br> (nA)<br>D<br>Dark current   I<br>**----- End of picture text -----**<br>


## **Response Time vs. Load Resistance Characteristics (Typical)** 

**Sensing Position Characteristics (EE-SV3-D(S))** 

**Sensing Position Characteristics (EE-SV3(-B))** 

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10.00=eFe Ta = 25VCC = 5 V °CVCC = 5 V °CCC = 5 V °C = 5 V °C 1<br>SeeFe ll<br>. _——Perrinosas67:| aa—Perrinosas67:| aaPerrinosas67:| aa aoooo oecScS Stoo|oo|| oeeeee eeonon oe 8||<br>joolecal UI TT Na<br>co<br>eae<br>0.01pepe 0.1 1<br>Load resistance RL (kΩ)L (kΩ) (kΩ)Ω))<br>s)<br>μ<br>Response time tr, tf (<br>**----- End of picture text -----**<br>


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SeeFe Ta = 25VCC = 5 V °CVCC = 5 V °CCC = 5 V °C = 5 V °C ll °CC 1 106Pe Ta = 25IVFCE= 20 mA  = 10 V °C 100Pt Ta = 25IVFCE= 20 mA  = 10 V °C<br>Center of optical axis Center of optical axis<br>. osas67:| aaas67:| aas67:| aa aaa aoooo oecScS Stoo|oo|| oeeeee eeonon oe 8|| 80 pov]—-0-d 80 E —0d<br>_——Perrinosas67:| aa—Perrinosas67:| aaPerrinosas67:| aa Py Ty dS<br>joolecal UI TT Na m m i<br>co © il © Hil<br>eae » »<br>0.01pepe 0.1 1 10 ; O02 O01 ie) O41 02 03 04 ; 05 025 oO 025 05 O75 10<br>Load resistance RL (kΩ)L (kΩ) (kΩ)Ω)) Distance d (mm) Distance d (mm)<br>Sensing Position Characteristics  Sensing Position Characteristics  Response Time Measurement<br>(EE-SV3-G(S)) (EE-SV3-C(S)) Circuit<br>120 120<br>EEREE Ta = 25IVFCE= 20 mA  = 10 V °C Pt Ta = 25IVFCE= 20 mA  = 10 V °C Input tlt<br>− Center of optical axis 90 %<br>Output 10 %<br>ne80 0 .n ee .ft)<br>d + a]<br>a t, 80CAC Ceaif 4 ve —-t<br>Input<br>Center of optical axis<br>.SaRG hen tL H =<br>ican tee Lo [ Fe Output<br>. | tL AL<br>°PtP LT PE .<br>05 -025 0 025 05 075 10 ° 10 05 Q Os 10 #15 20 = =<br>Distance d (mm) Distance d (mm)<br> (%)<br> (%) L<br>L Relative light current  I<br>Relative light current  I<br> (%)  (%)<br>L L<br>Relative light current  I Relative light current  I<br>**----- End of picture text -----**<br>


**Sensing Position Characteristics (EE-SV3-G(S))** 

**EE-SV3 Series** Photomicrosensor (Transmissive) 

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