EE-SJ3-D

## **Photomicrosensor (Transmissive) EE-SJ3 Series** 

**Be sure to read** _**Precautions**_ **on page 25.** 

## ■ **Dimensions** 

**Note:** All units are in millimeters unless otherwise indicated. 

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LR 0.3 Center mark i 6.2<br>0.2<br>10.2<br>7.2±0.2<br>6<br>Four, 0.5<br>Four, 0.25<br>7.6±0.3<br>Cross section BB aaa 2.54±0.2<br>Cross section AA<br>EE [oa:]<br>Model             Aperture (a x b)<br>EE-SJ3-C        2.1 x 1.0<br>Internal Circuit EE-SJ3-D        2.1 x 0.2<br>EE-SJ3-G     0.5 x 2.1<br>K C<br>Unless otherwise specified, the<br>tolerances are as shown below.<br>A E Dimensions          Tolerance<br>3 mm max. ±0.3<br>Terminal No.      Name<br>3 < mm ≤ 6 ±0.375<br>A     Anode<br>6 < mm ≤ 10 ±0.45<br>K     Cathode<br>C     Collector 10 < mm ≤ 18 ±0.55<br>E     Emitter 18 < mm ≤ 30 ±0.65<br>**----- End of picture text -----**<br>


## ■ **Features** 

**•** High-resolution model with a 0.2-mm-wide sensing aperture, highsensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available. 

## ■ **Absolute Maximum Ratings (Ta = 25** ° **C)** 

|**Item**|**Item**|**Symbol**|**Rated value**|
|---|---|---|---|
|**Emitter**|**Forward current**|IF|50 mA (see note 1)|
||**Pulse forward**<br>**current**|IFP|1 A (see note 2)|
||**Reverse voltage**|VR|4 V|
|**Detector**|**Collector–Emit-**<br>**ter voltage**|VCEO|30 V|
||**Emitter–Collec-**<br>**tor voltage**|VECO|---|
||**Collector cur-**<br>**rent**|IC|20 mA|
||**Collector dissi-**<br>**pation**|PC|100 mW (see note<br>1)|
|**Ambient tem-**<br>**perature**|**Operating**|Topr|–25°C to 85°C|
||**Storage**|Tstg|–30°C to 100°C|
|**Soldering temperature**||Tsol|260°C<br>(see note 3)|



- **Note: 1.** Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 

   **2.** The pulse width is 10 μs maximum with a frequency of 100 Hz. 

   **3.** Complete soldering within 10 seconds. 

## ■ **Electrical and Optical Characteristics (Ta = 25** ° **C)** 

|**Item**<br>~~ee~~<br>~~ee es~~|**Item**<br>~~ee~~<br>~~ee es~~|**Symbol**<br>~~ee~~<br>~~es~~|**Value**<br>~~ee~~<br>~~eeseesene~~<br>|**Value**<br>~~ee~~<br>~~eeseesene~~<br>|**Value**<br>~~ee~~<br>~~eeseesene~~<br>|**Condition**<br>~~ee~~<br>~~ene~~<br>~~er~~|
|---|---|---|---|---|---|---|
||||**EE-SJ3-C**<br>~~ee~~<br>~~ees~~<br>~~er~~|**EE-SJ3-D**<br>~~ee~~<br>~~ees~~<br>~~er~~|**EE-SJ3-G**<br>~~ee~~<br>~~ene~~<br>~~er~~||
|**Emitter**<br>~~SS~~|**Forward voltage**<br>~~ee es~~<br>~~SS~~|VF<br>~~es~~<br>~~SS~~|1.2 V typ., 1.5 V max.<br>~~eeseesene~~<br>~~er~~<br>~~SS~~|||IF= 30 mA<br>~~ene~~<br>~~er~~|
||**Reverse current**<br>~~ee es~~<br>~~SS~~<br>~~ee~~|IR<br>~~es~~<br>~~SS~~<br>~~es~~|0.01μA typ., 10μA max.<br>~~ees ees ene~~<br>~~er~~<br>~~SS~~<br>~~es~~|||VR= 4 V<br>~~ene~~<br>~~er~~<br>~~es~~|
||**Peak emission wave-**<br>**length**<br>~~SS~~<br>~~ee~~<br>~~re~~|λP<br>~~SS~~<br>~~es~~<br>~~rs~~|940 nm typ.<br>~~SS~~<br>~~es~~<br>~~rs~~|||IF= 20 mA<br>~~es~~<br>~~rs~~|
|**Detector**<br>~~Ce~~<br>~~SS~~<br>~~en~~|**Light current**<br>~~ee ~~<br>~~re~~<br>~~Ce~~<br>~~SS~~|IL<br> ~~es~~<br>~~rs~~<br>~~SS~~|1 to 28 mA typ.<br>~~es~~<br>~~rs~~<br>~~SS~~|0.1 mA min.<br>~~es~~<br>~~rs~~<br>~~SS~~|0.5 to 14 mA<br>~~es~~<br>~~rs~~<br>~~SS~~|IF= 20 mA, VCE= 10 V<br>~~es~~<br>~~rs~~<br>~~SS~~|
||**Dark current**<br>~~re~~<br>~~Ce~~<br>~~ee res~~<br>~~SS~~|ID<br>~~rs~~<br>~~res~~<br>~~SS~~|2 nA typ., 200 nA max.<br>~~rs~~<br>~~rr~~<br>~~SS~~|||VCE= 10 V, 0lx<br>~~rs~~<br>~~SS~~|
||**Leakage current**<br>~~Ce~~<br>~~ee res~~<br>~~SS~~|ILEAK<br>~~res~~<br>~~SS~~|---<br>~~rr~~<br>~~SS~~|||---<br>~~SS~~|
||**Collector–Emitter satu-**<br>**rated voltage**<br>~~ee res~~<br>~~SS~~<br>~~ee~~<br>~~en~~|VCE(sat)<br>~~res ~~<br>~~SS~~<br>~~a ee~~|0.1 V typ.,<br>0.4 V max.<br> ~~rr~~<br>~~SS~~<br>~~ee~~|---<br>~~rr~~<br>~~SS~~<br>~~ee~~|0.1 V typ.,<br>0.4 V max.<br>~~SS~~<br>~~ee~~|IF= 20 mA,<br>IL= 0.1 mA<br>~~SS~~<br>~~ee~~<br>~~eee~~|
||**Peak spectral sensitivity**<br>**wavelength**<br>~~SS~~<br>~~ee~~<br>~~en~~|λP<br>~~SS~~<br>~~a ee~~|850 nm typ.<br>~~SS~~<br>~~ee~~|||VCE= 10 V<br>~~SS~~<br>~~ee~~<br>~~eee~~|
|**Rising time**<br>~~ee ~~<br>~~en~~||tr<br> ~~a ee~~|4μs typ.<br>~~ee~~|||VCC= 5 V,<br>RL= 100Ω,<br>IL= 5 mA<br>~~ee~~<br>~~eee~~|
|**Falling time**<br>~~en~~<br>~~a~~||tf|4μs typ.||||



**EE-SJ3 Series** Photomicrosensor (Transmissive) 

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## ■ **Engineering Data** 

**Forward Current vs. Collector Dissipation Temperature Rating** 

## **Forward Current vs. Forward Voltage Characteristics (Typical)** 

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IF<br>"0Pte<br>°PN PC<br>\ “<br>30 UN<br>aoPET UNENl<br>Po NNNene<br>°Pit | N F<br>-40 -20 oO 2o 40 60 80 100<br>Ambient temperature Ta (°C)<br> (mA)F  (mW)C<br>Forward current  I Collector dissipation P<br>**----- End of picture text -----**<br>


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Pt<br>Ta = −30°C<br>#0 ef Ta = 25°C EL<br>° Ta = 70 ee)! °C<br>ae HT<br>30Seen 4 ine<br>20<br>SeRGe) ine<br>°;SEREDYW Gan<br>fe) 02 04 06 O08 1 12 14 16<br>Forward voltage VF (V)<br>Relative Light Current vs. Ambi-<br>ent Temperature Characteristics<br>(Typical)<br>120<br>IFF<br>VCE = 5 VCE = 5 V = 5 V<br>"0<br>Ca<br>vol 7) aN<br>a<br>|<br>70<br>0PPPP<br>“40-20 0 20 40 60 80<br>Ambient temperature Ta (°C)<br> (mA)<br>F<br>Forward current  I<br> (%)<br>L<br>Relative light current  I<br>**----- End of picture text -----**<br>


**Relative Light Current vs. Ambient Temperature Characteristics (Typical)** 

**Light Current vs. Collector** − **Emitter Voltage Characteristics (EE-SJ3-G)** 

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20) Ta = 25°C 120 IFF = 20 mA<br>To o VCE = 5 VCE = 5 V = 5 V<br>16PP "0<br>|pot IF = 50 mA<br>Le IF = 40 mA Ca<br>Ae<br>IF = 30 mA<br>8oeamm =ee esSe vol 7) aN<br>6 | som IF = 20 mA ||<br> —_—-_— La a<br>SS IF = 10 mA |<br>(2 ae 70<br>Cp TH 0PPPP<br>Oo 1 2 3 4 5 6 7 8 8 10 “40-20 0 20 40 60 80<br>Collector−Emitter voltage VCE (V)<br> (%)<br>L<br> (mA)<br>L<br>Light current  I<br>Relative light current  I<br>**----- End of picture text -----**<br>


**Sensing Position Characteristics (EE-SJ3-D)** 

**Response Time vs. Load Resistance Characteristics (Typical)** 

**Light Current vs. Forward Current Characteristics (Typical)** 

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Ta = 25°C<br>VCE = 10 V<br>of<br>wt Seelt  eeeenePtt<br>"CLE<br>1COE ete<br>10nee 4nen71<br>aitOozeAL<br>WaneiaPIA Tit<br>i?) 10 20 30 40<br>Forward current IF (mA)<br> (mA)<br>L<br>Light current  I<br>**----- End of picture text -----**<br>


**Dark Current vs. Ambient Temperature Characteristics (Typical)** 

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10000 === SESS<br>VCE = 10 V<br>EE 0 lx  S==Se=7<br>000 eager———— eet<br>100extereS AS A ON NN A GO<br>SSS<br>=<br>cane ane<br>| —————ee see== eee<br>to<br>ae eee<br>oe See eeeee<br>0.01 fol pd<br>oooSSeSLt tt tt<br>-30 -20 -10 0 10 20 30 40 50 60 70 80 90<br>Ambient temperature Ta (°C)<br> (nA)<br>D<br>Dark current   I<br>**----- End of picture text -----**<br>


**Sensing Position Characteristics (EE-SJ3-G)** 

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Coona Oe Ad | ire8 Ta = 25VCC = 5 V °C {Ii ‘00 VTa = 25IFCE= 20 mA  = 10 V °C oo Ta = 25IVFCE= 20 mA  = 10 V °C<br>Sea ee arn ees ec gi eee eres EA 80 Center of optical axis geuseae 80 −0<br>ee a2 +<br>d<br>oe<br>er a 1<br>oe ne etl soe see “ | 6 \ Center of optical axis<br>ann 0 | © Hil *o |<br>topdem te<br>a|eeerr | 205 Pe] TE] 20<br>0.01 Ot 1 10 O02 O01 i?) 01 02 03 04 ° 05 025 0 025 05 975 10<br>Load resistance RL (kΩ) Distance d (mm) Distance d (mm)<br>s)Response time tr, tf (μ  (%)Relative light current  IL  (%)Relative light current  IL<br>**----- End of picture text -----**<br>


## **Sensing Position Characteristics (EE-SJ3-C)** 

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IF = 20 mA<br>120Pe Ta = 25VCE = 10 V °C<br>Center of optical axis<br>—H0-t<br>NE<br>aS<br>et EY | er<br>|LLL H<br>0 \ | Hil<br>JA<br>0PLN Ty<br>10 05 fe) 05 1.0 15 20<br>Distance d (mm)<br> (%)<br>L<br>Relative light current  I<br>**----- End of picture text -----**<br>


**Response Time Measurement Circuit** 

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Input<br>90 %<br>Output 10 %<br>_f 7<br>"<br>Input<br>—<br>yak<br>Output<br>|<br>**----- End of picture text -----**<br>


**EE-SJ3 Series** Photomicrosensor (Transmissive) 

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