EE-SA105

**Back** ~~omRron——ss~~ 

**EE–SA105** 

## **Opto–Switch** 

## **Actuator** 

Phototransistor output. 

Incorporates built–in actuator. 

- Small size allows use in confined spaces. 

- No mechanical contacts ensure long life expectancy. Low operating force (15gf (0.15N)). 

## ~~Dimensions~~ 

**==> picture [195 x 132] intentionally omitted <==**

**----- Start of picture text -----**<br>
R0.6 iW 1.4 dia. ‘aa 1.4<br>i ;<br>Actuator<br>i 14.2±0.3 T<br>8.2<br>6.2<br>Collector mark<br>9±1<br>io Four, 0.5 Four, 0.25<br>6.8±0.5<br>2.5<br>**----- End of picture text -----**<br>


**==> picture [202 x 55] intentionally omitted <==**

**----- Start of picture text -----**<br>
Internal Circuit Terminal No. Name<br>K C A Anode<br>K Cathode<br>C Collector<br>A E<br>E Emitter<br>**----- End of picture text -----**<br>


Unless otherwise specified, the tolerances are as shown below. **Dimensions Tolerance** ee 3 mm max. ±0.3 3 mm 6 ±0.375 — 6 mm 10 ±0.45 10 mm 18 ±0.55 a 18 mm 30 ±0.65 

## ~~Specifications~~ 

**Absolute Maximum Ratings (Ta = 25** ° **C)** 

~~a~~ **Item Symbol Rated value** ~~ee~~ **Emitter Forward current** IF 50 mA (see note 1) ~~|~~ **Pulse forward current** IFP 1 A (see note 2) ~~|—~~ **Reverse voltage** VR 4 V ~~re~~ **Detector Collector–Emitter voltage** VCEO 30 V ~~es~~ **Emitter–Collector voltage** VECO ~~es~~ 5 V ~~ee~~ **Collector current** IC 20 mA ~~OO~~ **Collector dissipation** PC 100 mW (see note 1) ~~re~~ **Ambient temperature Operating** Topr –25°C to 70°C ~~|~~ **Storage** Tstg –40°C to 100°C ~~a~~ **Soldering** Tsol 260°C 

**Note:** 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 µs maximum with a frequency of 100 Hz. 

## **Electrical and Optical Characteristics (Ta = 25** ° **C)** ~~a~~ **Item Symbol Value** 

|**Electrical and Optical Characteristics (Ta = 25ptical Characteristics (Ta = 25tical Characteristics (Ta = 25**<br>~~a~~|**Electrical and Optical Characteristics (Ta = 25ptical Characteristics (Ta = 25tical Characteristics (Ta = 25**<br>~~a~~|**Electrical and Optical Characteristics (Ta = 25ptical Characteristics (Ta = 25tical Characteristics (Ta = 25**|**Electrical and Optical Characteristics (Ta = 25ptical Characteristics (Ta = 25tical Characteristics (Ta = 25(Ta = 25Ta = 25**°**C))**||
|---|---|---|---|---|
|**Item**<br>~~a~~<br>~~a~~||**Symbol**|**Value**|**Condition**|
|**Emitter**<br>~~a~~<br>~~|~~<br>~~a~~<br>~~|~~<br>~~a~~<br>~~a~~|**Forward voltage**<br>~~a~~<br>~~|~~<br>~~a~~|VF|1.2 V typ., 1.5 V max.|IF= 30 mA|
||**Reverse current**<br>~~|~~<br>~~a~~<br>~~|~~<br>~~a~~|IR<br>~~a~~|0.01µA typ., 10µA max.|VR= 4 V|
||**Peak emission wavelength**<br>~~|~~<br>~~a~~<br>~~a~~|λP<br>~~a~~|940 nm typ.|IF= 20 mA|
|**Detector**<br>~~a~~<br>~~|~~<br>~~a~~<br>~~a~~<br>~~a~~|**Light current**<br>~~a~~<br>~~|~~<br>~~a~~|IL|0.5 mA min.|IF= 20 mA, VCE= 5 V at free position (FP)|
||**Dark current**<br>~~|~~<br>~~a~~<br>~~a~~|ID<br>~~a~~|2 nA typ., 200 nA max.|VCE= 10 V, 0x|
||**Leakage current**<br>~~a~~|ILEAK<br>~~a~~|10µA max.|IF= 20 mA, VCE= 5 V at operating position (OP)|
||**Collector–Emitter saturated**<br>**voltage**|VCE(sat)|0.15 V typ., 0.4 V max.|IF= 20 mA, IL= 0.1 mA|
||**Peak spectral sensitivity**<br>**wavelength**<br>~~a~~|λP|850 nm typ.|VCE= 10 V|
|**Rising time**<br>~~a~~<br>~~es~~||tr<br>~~es~~<br>~~ee~~|---<br>~~es~~<br>~~ee~~|---<br>~~es~~|
|**Falling time**<br>~~es~~||tf<br>~~es~~<br>~~ee~~|---<br>~~es~~<br>~~ee~~|---<br>~~es~~|



## ~~Engineering Data~~ 

**==> picture [480 x 468] intentionally omitted <==**

**----- Start of picture text -----**<br>
Forward Current vs. Collector Forward Current vs. Forward Light Current vs. Forward Current<br>Dissipation Temperature Rating Voltage Characteristics (Typical) Characteristics (Typical)<br>Ta = 25°C<br>IF VCE = 10 V<br>TOUT TT) «(OC HPS<br>Ta = –30°C<br>{LEN PC Ta = 25°C<br>\ EL ep Ta = 70°C ET EEE<br>LE INAE EP Lg HhHel} Peer eras4<br>\) | PEEEE EE<br>°FENG PELE| Ee<br>. : i PORE<br>Ambient temperature Ta (°C) Forward voltage VF (V) Forward current IF (mA)<br>Light Current vs. Collector–Emitter Relative Light Current vs. Ambient Dark Current vs. Ambient Tem-<br>Voltage Characteristics (Typical) Temperature Characteristics (Typical) perature Characteristics (Typical)<br>Ta = 25°C IVF CE= 20 mA = 5 V V0 xCE = 10 V<br>IF = 50 mA<br>IF = 40 mA<br>e rt CL [TN]<br>IF = 30 mA<br>e e Ss ee<br>Za ____ ____---<br>IF = 20 mA<br>| r e ~ {=== aeeeeeee<br>IF = 10 mA<br>Collector–Emitter voltage VCE (V) Ambient temperature Ta (°C) Ambient temperature Ta (°C)<br>Sensing Position Characteristics (Typical)<br>IF = 20 mA<br>“LL VTa = 25CE = 5 V°C<br>wiNE d (FP point: 0 mm) +,<br>LN<br>LA<br>tL<br>Distance d (mm)<br>F F L<br>Forward current  I   (mA) Light current  I   (mA)<br>Forward current  I   (mA)<br>Collector dissipation Pc (mW)<br>L<br>L D<br>Light current  I   (mA)<br>Dark current   I   (nA)<br>Relative light current  I   (%)<br>L<br>Relative light current  I   (%)<br>**----- End of picture text -----**<br>