ECH8695R-TL-W

## **ECH8695R** 

## **Power MOSFET for 1-2 Cells Lithium-ion Battery Protection 24 V, 9.1 mΩ, 11 A, Dual N-Channel** 

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This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches of portable machines. Best suited for 1-2 cells Lithium-ion Battery applications. 

## **Features** 

- Low On-Resistance 

- 2.5 V drive 

- Common-Drain Type 

- ESD Diode-Protected Gate 

|VDSS|RDS(on)Max|ID Max|
|---|---|---|
|24 V|9.1 mΩ@4.5 V<br>9.5 mΩ@4.0 V<br>11.5 mΩ@3.1 V<br>13.3 mΩ@2.5 V|11 A|



- Built-in Gate Protection Resistor 

- Pb-Free, Halogen Free and RoHS compliance 

## **Typical Applications** 

- 1-2 cells Lithium-ion Battery Charging and Discharging Switch 

|Parameter<br>~~—~~|(<br>Symbol<br>~~Ft~~|)<br>Value<br>~~Ft~~|Unit<br>~~Ft~~|
|---|---|---|---|
|Drain to Source Voltage<br>~~—~~|VDSS<br>~~Ft~~|24<br>~~Ft~~|V<br>~~Ft~~|
|Gate to Source Voltage<br>~~—~~|VGSS<br>~~Ft~~|12.5<br>~~Ft~~|V<br>~~Ft~~|
|Drain Current(DC)<br>~~—~~|ID<br>~~Ft~~|11<br>~~Ft~~|A<br>~~Ft~~|
|Drain Current (Pulse)<br>PW10s, duty cycle1%<br>~~—~~|IDP<br>~~Ft~~|60<br>~~Ft~~|A<br>~~Ft~~|
|Power Dissipation<br>Surface mounted on ceramic substrate<br>(900 mm<br>2 0.8 mm)1 unit<br>~~—~~|PD<br>~~Ft~~|1.4<br>~~Ft~~|W<br>~~Ft~~|
|Total Dissipation<br>Surface mounted on ceramic substrate<br>(900 mm<br>2 0.8 mm)<br>~~—~~|PT<br>~~Ft~~|1.5<br>~~Ft~~|W<br>~~Ft~~|
|Junction Temperature<br>~~—~~|Tj<br>~~Ft~~|150<br>~~Ft~~|C<br>~~Ft~~|
|Storage Temperature<br>~~—~~|Tstg<br>~~Ft~~|55 to +150<br>~~Ft~~|C<br>~~Ft~~|



## **ELECTRICAL CONNECTION N-Channel** 

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8 7 6 5<br>1 : Source1<br>2 : Gate1<br>3 : Source2<br>4 : Gate2<br>5 : Drain<br>6 : Drain<br>7 : Drain<br>8 : Drain<br>1 2 3 4<br>**----- End of picture text -----**<br>


## **MARKING** 

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US<br>LOT No.<br>SOT-28FL / ECH8<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 5 of this data sheet. 

## **THERMAL RESISTANCE RATINGS** 

|**THERMAL RESISTANCE RATINGS**||||
|---|---|---|---|
|Parameter|Symbol|Value|Unit|
|Junction to Ambient<br>Surface mounted on ceramic substrate<br>(900 mm<br>2 0.8 mm)1 unit|RJA|89.2|C/W|



**©** Semiconductor Components Industries, LLC, 2016 **December 2016 - Rev. 3** 

**1** 

Publication Order Number : 

**ECH8695R/D** 

**ECH8695R** 

## **ELECTRICAL CHARACTERISTICS** at Ta  25C (Note 2) 

|Parameter|Symbol|Conditions||Value||Unit|
|---|---|---|---|---|---|---|
||||min|typ|max||
|Drain to Source Breakdown Voltage|V(BR)DSS|ID= 1 mA, VGS= 0 V|24|||V|
|Zero-Gate Voltage Drain Current|IDSS|VDS= 20 V, VGS= 0 V|||1|A|
|Gate to Source Leakage Current|IGSS|VGS=8 V, VDS= 0 V|||1|A|
|Gate Threshold Voltage|VGS(th)|VDS= 10 V, ID= 1 mA|0.5||1.3|V|
|Forward Transconductance|gFS|VDS= 10 V, ID= 5 A||6.5||S|
|Static Drain to Source On-State<br>Resistance|RDS(on)|ID= 5 A, VGS= 4.5 V|5.6|7.0|9.1|m|
|||ID= 5 A, VGS= 4.0 V|5.8|7.3|9.5|m|
|||ID= 5 A, VGS= 3.1 V|6.5|8.2|11.5|m|
|||ID= 2.5 A, VGS= 2.5 V|7.6|9.5|13.3|m|
|Turn-ON Delay Time|td(on)|See Fig. 1  (Note 3)||300||ns|
|Rise Time|tr|||320||ns|
|Turn-OFF Delay Time|td(off)|||19.7||s|
|Fall Time|tf|||22.3||s|
|Turn-ON Delay Time|td(on)|See Fig. 2  (Note 3)||300||ns|
|Rise Time|tr|||320||ns|
|Turn-OFF Delay Time|td(off)|||1,240||s|
|Fall Time|tf|||370||s|
|Total Gate Charge|Qg|VDS = 10 V, VGS = 4.5 V, ID = 11 A||10||nC|
|Gate to Source Charge|Qgs|||1.6||nC|
|Gate to Drain “Miller” Charge|Qgd|||1.5||nC|
|Forward Diode Voltage|VSD|IS= 11 A, VGS= 0 V||0.77|1.2|V|



Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note 3 : The fall switching time is dependent on the input pulse width. 

## **Fig.1 Switching Time Test Circuit 1                                                      Fig.2 Switching Time Test Circuit 2** 

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VIN VDD=10V<br>4.5V<br>0V<br>ID=5A<br>VIN RL=2<br>D VOUT<br>PW=10s<br>D.C.1%<br>Rg<br>G<br>ECH8695R<br>P.G 50 S<br>Rg=1k<br>**----- End of picture text -----**<br>


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VIN VDD=10V<br>4.5V<br>0V<br>ID=5A<br>VIN RL=2<br>D VOUT<br>PW 10ms<br>D.C.1%<br>Rg<br>G<br>ECH8695R<br>P.G 50 S<br>Rg=1k<br>**----- End of picture text -----**<br>


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## **ECH8695R** 

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ID  --  VDS ID  --  VGS<br>10 10<br>Ta=25C VDS=10V<br>9<br>8 8<br>7<br>6 6<br>5<br>4 4<br>3<br>2 2<br>1<br>0 0<br>0 0.1 0.2 0.3 0.4 0.5 0 0.5 1.0 1.5 2.0 2.5<br>Drain to Source Voltage, VDS  --  V Gate to Source Voltage, VGS  --  V<br>RDS(on)  --  VGS RDS(on)  --  Ta<br>30 18<br>Ta=25C<br>16<br>25<br>5A 14<br>20 12<br>10<br>15<br>8<br>10 6<br>4<br>5<br>2<br>0 0<br>0 2 4 6 8 10 --60 --40 --20 0 20 40 60 80 100 120 140 160<br>Gate to Source Voltage, VGS  --  V Ambient Temperature, Ta  --  C<br>gFS --  ID IS  --  VSD<br>10 100<br>7 VDS=10V 75 VGS=0V<br>5 3<br>2<br>3 10<br>7<br>5<br>2<br>3<br>2<br>1.0 1.0<br>7<br>7 5<br>5 3<br>2<br>3 0.1<br>7<br>5<br>2<br>3<br>2<br>       0.1 0.01<br>0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9<br>Drain Current, ID  --  A  Forward Diode to Source Voltage, VSD  --  V<br>S/W Time  --  ID S/W Time  --  Input Pulse Width<br>100k 10k<br>7 VDD=10V VDD=10V<br>5 VGS=4.5V VGS=4.5V<br>3 PW=10 μ s 1k ID=5A<br>2<br>10k<br>7 100<br>5<br>3<br>2<br>10<br>1k<br>7<br>5<br>1<br>3<br>2<br>100 0.1<br>0.1 2 3 5 7 1.0 2 3 5 7 10 0.01 0.1 1.0 10 100<br>Drain Current, ID  --  A Input Pulse Width  --  ms<br>tf<br>ID=2.5A<br>tr<br>tr<br>td(on)<br>td(off)<br>td(on)<br>tf<br>td(off)<br>VGS=1.5V<br>VGS=4.5V, ID=5.0A<br>VGS=2.5V, ID=2.5A<br>VGS=4.0V, ID=5.0A<br>VGS=3.1V, ID=5.0A<br>C<br>Tc= --25 C<br>75<br>C<br>25<br>Ta=75C<br>1.8V<br>25C<br>--25C<br>3.1V<br>2.5V<br>4.0V<br>C<br>--25<br>C<br>25<br>C<br>Ta=75<br>4.5V<br>Drain Current, ID  --  A Drain Current, ID  --  A<br> <br>Static Drain to Source On-State Resistance, RDS(on)  --  m Static Drain to Source On-State Resistance, RDS(on)  --  m<br>  --  S<br>gFS<br>Forward Diode Current, IS  --  A<br>Forward Transconductance,<br>Switching Time, S/W Time  --  ns Switching Time, S/W Time  --  μs<br>**----- End of picture text -----**<br>


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**ECH8695R** 

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VGS  --  Qg S O A<br>4.5 100<br>VDS=10V 75<br>4.0 ID=11A 3<br>2<br>3.5<br>10<br>7<br>3.0 5<br>3<br>2<br>2.5<br>1.0<br>2.0 7 Operation in this area<br>5 is limited by R DS (on).<br>3<br>1.5 2<br>0.1<br>1.0 75 Ta=25C<br>0.5 32 Single pulse Surface mounted on ceramic substrate<br>0 0.01 (900mm [2] 0.8mm)<br>0 2 4 6 8 10 12 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100<br>Total Gate Charge, Qg  --  nC Drain to Source Voltage, VDS  --  V<br>PD  --  Ta<br>1.8<br>Surface mounted on ceramic substrate<br>1.6 (900mm [2] 0.8mm)<br>1.5<br>1.4<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 20 40 60 80 100 120 140 150<br>Ambient Temperature, Ta  --  C<br>RJA  --  Pulse Time<br>100<br>5 [7]<br>3<br>2<br>10<br>5 [7]<br>3<br>2<br>1.0<br>5 [7]<br>3<br>2<br>0.1<br>5 [7]<br>3<br>2<br>0.01<br>5 [7]<br>3 Surface mounted on ceramic substrate<br>2 (900mm [2] 0.8mm) 1unit<br>0.001<br>0.000001 2 3 5 70.00001 [2] 3 5 7 0.0001 2 3 5 7 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10<br>Pulse Time, PT  --  s<br>IDP=60A(PW10s)<br>ID=11A<br>0.05<br>Duty Cycle=0.5<br>0.01<br>0.2<br>0.1<br>0.02<br>Single Pulse<br>100<br>s<br>10ms<br>DC operation<br>100ms<br>1ms<br>Drain Current, ID  --  A<br>Gate to Source Voltage, VGS  --  V<br>Power Dissipation, PD  --  W<br>JA  --  ºC/W<br><br>Thermal Resistance, R<br>**----- End of picture text -----**<br>


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**ECH8695R** 

## **PACKAGE DIMENSIONS** unit : mm 

## **SOT-28FL / ECH8** 

CASE 318BF ISSUE O 

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to<br>1 : Source1<br>2 : Gate1<br>3 : Source2<br>4 : Gate2<br>5 : Drain<br>6 : Drain<br>Recommended<br>7 : Drain   Soldering Footprint<br>8 : Drain<br>0.4<br>0.65<br>0.6<br>2.8<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

|Device|Marking|Package|Shipping (Qty / Packing)|
|---|---|---|---|
|ECH8695R-TL-W|US|SOT-28FL / ECH8<br>(Pb-Free / Halogen Free)|3,000 / Tape & Reel|



- For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.  http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF 

Note on usage : Since the ECH8695R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Please contact sales for use except the designated application. 

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