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ECH8660-TL-H
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 4.5 A, 4.5 A, 0.045 ohm
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Dual MOSFETs
- Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage
- MSL: MSL 1 - Unlimited
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 8Pins
- Channel Type: Complementary N and P Channel
- Product Range: -
- Qualification: -
- Transistor Case Style: SOT-28FL
- Operating Temperature Max: 150°C
- Power Dissipation N Channel: 1.5W
- Power Dissipation P Channel: 1.5W
- Drain Source Voltage Vds N Channel: 30V
- Drain Source Voltage Vds P Channel: 30V
- Continuous Drain Current Id N Channel: 4.5A
- Continuous Drain Current Id P Channel: 4.5A
- Drain Source On State Resistance N Channel: 0.045ohm
- Drain Source On State Resistance P Channel: 0.045ohm
| Delivery and price | |
|---|---|
| Units per pack | 3000 |
| Price | 0.174 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **Ordering number : ENA1358B ECH8660** ~~—_~~ @ **Power MOSFET** http://onsemi.com **30V, 4.5A, 59m** Ω **,[–] 30V,[–] 4.5A, 59m** Ω **, Complementary Dual ECH8** ## **Features** - The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and - high-speed switching , thereby enablimg high-density mounting - 4V drive - Halogen free compliance ## **Specifi cations** **Absolute Maximum Ratings** at Ta=25°C |Parameter|Symbol|Conditions|N-channel|P-channel|Unit| |---|---|---|---|---|---| |Drain-to-Source Voltage|VDSS||30|--30|V| |Gate-to-Source Voltage|VGSS||±20|±20|V| |Drain Current(DC)|ID||4.5|--4.5|A| |Drain Current(Pulse)|IDP|PW≤10μs, dutycycle≤1%|30|--30|A| |Allowable Power Dissipation|PD|When mounted on ceramic substrate (1200mm<br>2×0.8mm) 1unit|1.3||W| |Total Dissipation|PT|When mounted on ceramic substrate (1200mm<br>2×0.8mm)|1.5||W| |Channel Temperature|Tch||150||°C| |Storage Temperature|Tstg||--55 to +150||°C| Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ## **Product & Package Information** ## **Package Dimensions** - Package : ECH8 **==> picture [361 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> unit : mm (typ) Package<br>7011A-001 • JEITA, JEDEC<br>ECH8660-TL-H<br>Top View<br>Packing Type : TL<br>2.9<br>0.15<br>8 5<br>0 to 0.02<br>TL<br>1 4 Electrical Connection<br>fi 0.65 0.3 t<br>8 7 6 5<br>1 : Source1<br>2 : Gate1<br>3 : Source2<br>4 : Gate2<br>5 : Drain2<br>6 : Drain2<br>7 : Drain1<br>8 : Drain1<br>5 mE 1 2 3 4<br>Bottom View ECH8<br>0.25<br>2.8 2.3<br>0.25<br>0.9<br>0.07<br>**----- End of picture text -----**<br> - JEITA, JEDEC : - - Minimum Packing Quantity : 3,000 pcs./reel **==> picture [186 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> Packing Type : TL Marking<br>**----- End of picture text -----**<br> **==> picture [31 x 27] intentionally omitted <==** **----- Start of picture text -----**<br> TF<br>Lot No.<br>**----- End of picture text -----**<br> Semiconductor Components Industries, LLC, 2013 **July, 2013** 42512 TKIM/D2210 TKIM/N1908PE MSIM TC-00001695 No. A1358-1/8 **ECH8660** ## **Electrical Characteristics** at Ta=25°C |**Electrical Characteristics **at Ta|=25°C|||||| |---|---|---|---|---|---|---| |Parameter|Symbol|Conditions|Ratings|||Unit| ||||min|typ|max|| |[N-channel]||||||| |Drain-to-Source Breakdown Voltage|V(BR)DSS|ID=1mA, VGS=0V|30|||V| |Zero-Gate Voltage Drain Current|IDSS|VDS=30V, VGS=0V|||1|μA| |Gate-to-Source Leakage Current|IGSS|VGS=±16V, VDS=0V|||±10|μA| |Cutoff Voltage|VGS(off)|VDS=10V, ID=1mA|1.2||2.6|V| |Forward Transfer Admittance|| yfs||VDS=10V, ID=2A|1|1.66||S| |Static Drain-to-Source On-State Resistance|RDS(on)1|ID=2A, VGS=10V||45|59|mΩ| ||RDS(on)2|ID=1A, VGS=4.5V||85|119|mΩ| ||RDS(on)3|ID=1A, VGS=4V||110|155|mΩ| |Input Capacitance|Ciss|VDS=10V, f=1MHz||240||pF| |Output Capacitance|Coss|VDS=10V, f=1MHz||45||pF| |Reverse Transfer Capacitance|Crss|VDS=10V, f=1MHz||30||pF| |Turn-ON Delay Time|td(on)|See specif ed Test Circuit.||6.2||ns| |Rise Time|tr|See specif ed Test Circuit.||11||ns| |Turn-OFF Delay Time|td(off)|See specif ed Test Circuit.||17||ns| |Fall Time|tf|See specif ed Test Circuit.||7.5||ns| |Total Gate Charge|Qg|VDS=10V, VGS=10V, ID=4.5A||4.4||nC| |Gate-to-Source Charge|Qgs|VDS=10V, VGS=10V, ID=4.5A||1.1||nC| |Gate-to-Drain “Miller” Charge|Qgd|VDS=10V, VGS=10V, ID=4.5A||0.64||nC| |Diode Forward Voltage|VSD|IS=4.5A, VGS=0V||0.84|1.2|V| |[P-channel]||||||| |Drain-to-Source Breakdown Voltage|V(BR)DSS|ID=--1mA, VGS=0V|--30|||V| |Zero-Gate Voltage Drain Current|IDSS|VDS=--30V, VGS=0V|||--1|μA| |Gate-to-Source Leakage Current|IGSS|VGS=±16V, VDS=0V|||±10|μA| |Cutoff Voltage|VGS(off)|VDS=--10V, ID=--1mA|--1.2||--2.3|V| |Forward Transfer Admittance|| yfs||VDS=--10V, ID=--2A|2.5|4.2||S| |Static Drain-to-Source On-State Resistance|RDS(on)1|ID=--2A, VGS=--10V||45|59|mΩ| ||RDS(on)2|ID=--1A, VGS=--4.5V||71|100|mΩ| ||RDS(on)3|ID=--1A, VGS=--4V||82|115|mΩ| |Input Capacitance|Ciss|VDS=--10V, f=1MHz||430||pF| |Output Capacitance|Coss|VDS=--10V, f=1MHz||105||pF| |Reverse Transfer Capacitance|Crss|VDS=--10V, f=1MHz||75||pF| |Turn-ON Delay Time|td(on)|See specif ed Test Circuit.||7.5||ns| |Rise Time|tr|See specif ed Test Circuit.||26||ns| |Turn-OFF Delay Time|td(off)|See specif ed Test Circuit.||45||ns| |Fall Time|tf|See specif ed Test Circuit.||35||ns| |Total Gate Charge|Qg|VDS=--10V, VGS=--10V, ID=--4.5A||10||nC| |Gate-to-Source Charge|Qgs|VDS=--10V, VGS=--10V, ID=--4.5A||2.0||nC| |Gate-to-Drain “Miller” Charge|Qgd|VDS=--10V, VGS=--10V, ID=--4.5A||2.5||nC| |Diode Forward Voltage|VSD|IS=--4.5A, VGS=0V||--0.85|--1.2|V| ## **Switching Time Test Circuit** [N-channel] [P-channel] **==> picture [410 x 161] intentionally omitted <==** **----- Start of picture text -----**<br> VIN VDD=15V VIN VDD= --15V<br>10V 0V<br>0V --10V<br>ID=2A ID= --2A<br>VIN RL=7.5 Ω VIN RL=7.5 Ω<br>D VOUT D VOUT<br>PW=10 μ s PW=10 μ s<br>D.C. ≤ 1% D.C. ≤ 1%<br>G G<br>ECH8660 ECH8660<br>P.G 50 Ω S P.G 50 Ω S<br>**----- End of picture text -----**<br> No. A1358-2/8 **ECH8660** ## **Ordering Information** |**Ordering Information**|||| |---|---|---|---| |Device|Package|Shipping|memo| |ECH8660-TL-H|ECH8|3,000pcs./reel|Pb-Free and Halogen Free| **==> picture [482 x 552] intentionally omitted <==** **----- Start of picture text -----**<br> ID -- VDS [Nch] ID -- VGS [Nch]<br>4.0 6<br>VDS=10V<br>3.5<br>5<br>3.0<br>4<br>2.5<br>2.0 3<br>1.5<br>2<br>1.0<br>1<br>0.5<br>0 0<br>0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1 2 3 4 5<br>Drain-to-Source Voltage, VDS -- V IT14210 Gate-to-Source Voltage, VGS -- V IT14211<br>RDS(on) -- VGS [Nch] RDS(on) -- Ta [Nch]<br>240 200<br>Ta=25°C<br>200 ID=1A<br>2A 160<br>160<br>120<br>120<br>80<br>80<br>40<br>40<br>0 0<br>0 2 4 6 8 10 12 14 16 --60 --40 --20 0 20 40 60 80 100 120 140 160<br>Gate-to-Source Voltage, VGS -- V IT16223 Ambient Temperature, Ta -- °C IT14213<br>| yfs | -- ID [Nch] IS -- VSD [Nch]<br>5 7<br>VDS=10V 5 VGS=0V<br>3 3<br>2<br>2<br>1.0<br>7<br>1.0 5<br>3<br>7<br>2<br>5<br>0.1<br>3 7<br>5<br>2 3<br>2<br>0.1 0.01<br>0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 0.2 0.4 0.6 0.8 1.0 1.2<br>Drain Current, ID -- A IT14214 Diode Forward Voltage, VSD -- V IT14215<br>VGS=3.0V<br>3.5V<br>VGS=10.0V, ID=2A<br>VGS=4.0V, ID=1A<br>VGS=4.5V, ID=1A<br>°C<br>75<br>°C<br>Ta= --25<br>°C<br>25<br>6.0V 4.5V 4.0V<br>°C<br>Ta=75<br>°C<br>25<br>°C<br>Ta=75<br>°C<br>--25<br>°C<br>25<br>°C<br>--25<br>15.0V 10.0V<br>Drain Current, ID -- A Drain Current, ID -- A<br>Ω Ω<br>Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m<br>| -- S<br>fs<br>y<br>|<br>Source Current, IS -- A<br>Forward Transfer Admittance,<br>**----- End of picture text -----**<br> No. A1358-3/8 **ECH8660** **==> picture [483 x 736] intentionally omitted <==** **----- Start of picture text -----**<br> SW Time -- ID [Nch] Ciss, Coss, Crss -- VDS [Nch]<br>7 5<br>VDD=15V f=1MHz<br>5 VGS=10V 3<br>3<br>2<br>2<br>100<br>10<br>7<br>7 td(on)<br>5<br>5<br>3<br>3<br>2 2<br>1.0 10<br>0.1 2 3 5 7 1.0 2 3 5 7 10 0 5 10 15 20 25 30<br>Drain Current, ID -- A IT14216 Drain-to-Source Voltage, VDS -- V IT14217<br>VGS -- Qg [Nch] A S O [Nch]<br>10 7<br>5<br>VDS=10V PW≤10μs<br>9 ID=4.5A 32<br>8 10<br>7<br>7 5<br>3<br>6 2<br>1.0<br>5 7<br>4 53 Operation in thisarea is limited by RDS(on).<br>2<br>3<br>0.1<br>2 75 Ta=25°C<br>3 Single pulse<br>1 2 When mounted on ceramic substrate<br>0 0.01 (1200mm [2] ×0.8mm)<br>0 1 2 3 4 5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5<br>Total Gate Charge, Qg -- nC IT14218 Drain-to-Source Voltage, VDS -- V IT14195<br>ID -- VDS [Pch] ID -- VGS [Pch]<br>--4.0 --6<br>VDS= --10V<br>--3.5<br>--5<br>--3.0<br>--4<br>--2.5<br>--2.0 --3<br>--1.5<br>--2<br>--1.0<br>--1<br>--0.5<br>0 0<br>0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0<br>Drain-to-Source Voltage, VDS -- V IT14186 Gate-to-Source Voltage, VGS -- V IT14187<br>RDS(on) -- VGS [Pch] RDS(on) -- Ta [Pch]<br>180 160<br>Ta=25°C<br>160 ID= --1A 140<br>--2A<br>140<br>120<br>120<br>100<br>100<br>80<br>80<br>60<br>60<br>40<br>40<br>20 20<br>0 0<br>0 --2 --4 --6 --8 --10 --12 --14 --16 --60 --40 --20 0 20 40 60 80 100 120 140 160<br>Gate-to-Source Voltage, VGS -- V IT16224 Ambient Temperature, Ta -- °C IT14189<br>IDP=30A<br>ID=4.5A<br>tr<br>tf<br>VGS= --2.5V<br>Ciss<br>td(off)<br>Crss<br>Coss<br>VGS= --10.0V, ID= --2A<br>--3.0V<br>VGS= --4.5V, ID= --1A<br>VGS= --4.0V, ID= --1A<br>1ms<br>DC operation (Ta=25°100ms<br>C)<br>100<br>μs<br>10ms<br>--4.0V --3.5V<br>--4.5V<br>--6.0V<br>°C<br>25<br>°C<br>Ta=75<br>°C<br>--25<br>--10.0V<br>Ciss, Coss, Crss -- pF<br>Switching Time, SW Time -- ns<br>Drain Current, ID -- A<br>Gate-to-Source Voltage, VGS -- V<br>Drain Current, ID -- A Drain Current, ID -- A<br>Ω Ω<br>Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m<br>**----- End of picture text -----**<br> No. A1358-4/8 **ECH8660** **==> picture [474 x 737] intentionally omitted <==** **----- Start of picture text -----**<br> | yfs | -- ID [Pch] IS -- VSD [Pch]<br>2 --10<br>VDS= --10V 7 VGS=0V<br>10 5<br>7<br>5 3<br>3 2<br>2<br>--1.0<br>1.0 7<br>7 5<br>5<br>3<br>3<br>2 2<br>0.1 --0.1<br>7 7<br>5 5<br>3<br>3<br>2<br>2<br>0.01<br>7 --0.01<br>--0.001 2 3 5 7--0.01 [2] 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7--10 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2<br>Drain Current, ID -- A IT14190 Diode Forward Voltage, VSD -- V IT14191<br>SW Time -- ID [Pch] Ciss, Coss, Crss -- VDS [Pch]<br>100 1000<br>VDD= --15V f=1MHz<br>7 VGS= --10V 7<br>5 5<br>3 3<br>2 2<br>10 100<br>td(on)<br>7 7<br>5 5<br>3 3<br>--0.1 2 3 5 7 --1.0 2 3 5 7 --10 0 --5 --10 --15 --20 --25 --30<br>Drain Current, ID -- A IT14192 Drain-to-Source Voltage, VDS -- V IT14193<br>VGS -- Qg [Pch] A S O [Pch]<br>--10 7<br>5<br>VDS= --10V PW≤10μs<br>--9 ID= --4.5A 32<br>--8 --10<br>7<br>--7 5<br>3<br>--6 2<br>--1.0<br>--5 7<br>--4 53 Operation in thisarea is limited by RDS(on).<br>2<br>--3<br>--0.1<br>--2 75 Ta=25°C<br>3 Single pulse<br>--1 2 When mounted on ceramic substrate<br>(1200mm [2] ×0.8mm)<br>0 --0.01<br>0 1 2 3 4 5 6 7 8 9 10 11 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5<br>Total Gate Charge, Qg -- nC IT14194 Drain-to-Source Voltage, VDS -- V IT14196<br>PD -- Ta [Nch/Pch]<br>1.8<br>When mounted on ceramic substrate<br>1.6 (1200mm [2] ×0.8mm)<br>1.5<br>1.4<br>1.3<br>1.2<br>1.0<br>0.8<br>0.6<br>0.4<br>0.2<br>0<br>0 20 40 60 80 100 120 140 160<br>Ambient Temperature, Ta -- °C IT14197<br>IDP= --30A<br>ID= --4.5A<br>tf<br>Ciss<br>td(off)<br>Coss<br>Crss<br>tr<br>1ms<br>10ms<br>DC operation (Ta=25°<br>C)<br>100ms<br>100<br>μs<br>°C<br>Ta= --25<br>°C<br>75<br>°C<br>25<br>1unitTotal Dissipation<br>°C<br>Ta=75<br>°C<br>25<br>°C<br>--25<br>| -- S<br>fs<br>y<br>|<br>Source Current, IS -- A<br>Forward Transfer Admittance,<br>Ciss, Coss, Crss -- pF<br>Switching Time, SW Time -- ns<br>Drain Current, ID -- A<br>Gate-to-Source Voltage, VGS -- V<br>Allowable Power Dissipation, PD -- W<br>**----- End of picture text -----**<br> No. A1358-5/8 **ECH8660** ## **Embossed Taping Specifi cation** ECH8660-TL-H **==> picture [162 x 36] intentionally omitted <==** No. A1358-6/8 **ECH8660** **==> picture [81 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> Outline Drawing<br> ECH8660-TL-H<br>**----- End of picture text -----**<br> ## **Land Pattern Example** **==> picture [482 x 370] intentionally omitted <==** **----- Start of picture text -----**<br> Mass (g) Unit Unit: mm<br>0.02<br>* For reference [mm]<br>0.4<br>0.65<br>0.6<br>2.8<br>**----- End of picture text -----**<br> No. A1358-7/8 **ECH8660** Note on usage : Since the ECH8660 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1358-8/8
Updated at June 9, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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