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DTA115TET1G
Bipolar Pre-Biased / Digital Transistor, Single PNP, 50 V, 100 mA
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- Manufacturer: ONSEMI
- Product type: Pre-Biased / Digital Bipolar Transistors
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 3 Pin
- Product Range: -
- Qualification: -
- Power Dissipation: 300mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: Single PNP
- Transistor Case Style: SC-75
- Base Input Resistor R1: -
- DC Current Gain hFE Min: 160hFE
- Base Emitter Resistor R2: -
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max NPN: -
- Collector Emitter Voltage Max PNP: 50V
| Delivery and price | |
|---|---|
| Units per pack | 12000 |
| Price | 0.017 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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## Digital Transistors (BRT) R1 = 100 k R2 = k
## **PNP Transistors with Monolithic Bias Resistor Network**
## MUN2141, MMUN2141L, MUN5141, DTA115TE, DTA115TM3, NSBA115TF3
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base− emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
## **Features**
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
## **MAXIMUM RATINGS** (TA = 25C)
|**MAXIMUM RATINGS **(TA = 25C)A = 25C)= 25C)C)C)||||
|---|---|---|---|
|**Rating**|**Symbol**|**Max**|**Unit**|
|Collector−Base Voltage|VCBO|50|Vdc|
|Collector−Emitter Voltage|VCEO|50|Vdc|
|Collector Current − Continuous|IC|100|mAdc|
|Input Forward Voltage|VIN(fwd)|40|Vdc|
|Input Reverse Voltage|VIN(rev)|5|Vdc|
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
## **PIN CONNECTIONS**
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PIN 3<br>COLLECTOR<br>(OUTPUT)<br>PIN 1 R1<br>BASE<br>(INPUT) R2<br>PIN 2<br>EMITTER<br>(GROUND)<br>MARKING DIAGRAMS<br>SC−59<br>XX M CASE 318D<br>STYLE 1<br>1<br>oO<br>SOT−23<br>XXX M<br>CASE 318<br>STYLE 6<br>ie 1<br>SC−70/SOT−323<br>XX M<br>CASE 419<br>STYLE 3<br>e 1 s<br>SC−75<br>XX M CASE 463<br>e STYLE 1<br>1<br>SOT−723<br>XX M CASE 631AA<br>e<br>1 FF STYLE 1<br>SOT−1123<br>X M 1 CASE 524AA<br>STYLE 1<br>XXX = Specific Device Code<br>M = Date Code*<br>= Pb−Free Package<br>**----- End of picture text -----**<br>
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon manufacturing location.
## **ORDERING INFORMATION**
See detailed ordering, marking, and shipping information on page 2 of this data sheet.
NOTE: Some of the devices on this data sheet have been **DISCONTINUED** . Please refer to the table on page 2.
Publication Order Number: **DTA115T/D**
**1**
Semiconductor Components Industries, LLC, 2012 **May, 2024 − Rev. 5**
**MUN2141, MMUN2141L, MUN5141, DTA115TE, DTA115TM3, NSBA115TF3**
## **Table 1. ORDERING INFORMATION**
|**Table 1. ORDERING INFORMATION**||||
|---|---|---|---|
|**Device**|**Part Marking**|**Package**|**Shipping**†|
|MMUN2141LT1G|ACH|SOT−23|3000 / Tape & Reel|
|||(Pb−Free)||
|MUN5141T1G|6T|SC−70/SOT−323|3000 / Tape & Reel|
|||(Pb−Free)||
|DTA115TM3T5G|7G|SOT−723|8000 / Tape & Reel|
|||(Pb−Free)||
|NSBA115TF3T5G|Q (90)*|SOT−1123|8000 / Tape & Reel|
|||(Pb−Free)||
|**DISCONTINUED**(Note 1)||||
|MUN2141T1G|6Y|SC−59|3000 / Tape & Reel|
|||(Pb−Free)||
|DTA115TET1G|6U|SC−75|3000 / Tape & Reel|
|||(Pb−Free)||
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
- (xx) = Degree rotation in the clockwise direction.
1. **DISCONTINUED:** These devices are not recommended for new design. Please contact your **onsemi** representative for information. The most current information on these devices may be available on www.onsemi.com.
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300<br>250 Hl|tl| |<br>200<br>So<br>(1) (2) (3) (4) (5)<br>150 TI NA<br>100<br>ae DNEn<br>50 Nee<br>0 pitt<br>tT TIEN<br>−50 −25 0 25 50 75 100 125 150<br>AMBIENT TEMPERATURE (C)<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br>
- (1) SC−75 and SC−70/SOT323; Minimum Pad
- (2) SC−59; Minimum Pad
- (3) SOT−23; Minimum Pad
- (4) SOT−1123; 100 mm[2] , 1 oz. copper trace
- (5) SOT−723; Minimum Pad
**Figure 1. Derating Curve**
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**Table 2. THERMAL CHARACTERISTICS**
|**Characteristic**<br>**Symbol**<br>**Max**<br>**Unit**<br>**THERMAL CHARACTERISTICS (SC−59) (MUN2141)**<br>~~a~~|
|---|
|Total Device Dissipation<br>TA= 25C<br>(Note 2)<br>(Note 3)<br>Derate above 25C<br>(Note 2)<br>(Note 3)<br>PD<br>230<br>338<br>1.8<br>2.7<br>mW<br>mW/C<br>~~po~~|
|Thermal Resistance,<br>(Note 2)<br>Junction to Ambient<br>(Note 3)<br>R JA<br>540<br>370<br>C/W<br>~~ee~~|
|Thermal Resistance,<br>(Note 2)<br>Junction to Lead<br>(Note 3)<br>R JL<br>264<br>287<br>C/W<br>Junction and Storage Temperature Range<br>TJ, Tstg<br>−55 to +150<br>C<br>~~CUCU~~|
|**THERMAL CHARACTERISTICS (SOT−23) (MMUN2141L)**|
|Total Device Dissipation<br>TA= 25C<br>(Note 2)<br>(Note 3)<br>Derate above 25C<br>(Note 2)<br>(Note 3)<br>PD<br>246<br>400<br>2.0<br>3.2<br>mW<br>mW/C<br>Thermal Resistance,<br>(Note 1)<br>Junction to Ambient<br>(Note 3)<br>R JA<br>508<br>311<br>C/W<br>Thermal Resistance,<br>(Note 2)<br>R JL<br>174<br>C/W<br>~~po~~<br>~~es~~<br>~~es~~|
|Junction to Lead<br>(Note 3)<br>208|
|Junction and Storage Temperature Range<br>TJ, Tstg<br>−55 to +150<br>C|
|**THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5141)**|
|Total Device Dissipation<br>TA= 25C<br>(Note 2)<br>(Note 3)<br>Derate above 25C<br>(Note 2)<br>(Note 3)<br>PD<br>202<br>310<br>1.6<br>2.5<br>mW<br>mW/C<br>~~po~~|
|Thermal Resistance,<br>(Note 2)<br>Junction to Ambient<br>(Note 3)<br>R JA<br>618<br>403<br>C/W<br>~~ee~~|
|Thermal Resistance,<br>(Note 2)<br>Junction to Lead<br>(Note 3)<br>R JL<br>280<br>332<br>C/W<br>Junction and Storage Temperature Range<br>TJ, Tstg<br>−55 to +150<br>C<br>~~ee~~|
|**THERMAL CHARACTERISTICS (SC−75) (DTA115TE)**|
|Total Device Dissipation<br>TA= 25C<br>(Note 2)<br>(Note 3)<br>Derate above 25C<br>(Note 2)<br>(Note 3)<br>PD<br>200<br>300<br>1.6<br>2.4<br>mW<br>mW/C<br>~~po~~|
|Thermal Resistance,<br>(Note 2)<br>Junction to Ambient<br>(Note 3)<br>R JA<br>600<br>400<br>C/W<br>Junction and Storage Temperature Range<br>TJ, Tstg<br>−55 to +150<br>C<br>~~re~~|
|**THERMAL CHARACTERISTICS (SOT−723) (DTA115TM3)**|
|Total Device Dissipation<br>TA= 25C<br>(Note 2)<br>(Note 3)<br>Derate above 25C<br>(Note 2)<br>(Note 3)<br>PD<br>260<br>600<br>2.0<br>4.8<br>mW<br>mW/C<br>~~po~~|
|Thermal Resistance,<br>(Note 2)<br>Junction to Ambient<br>(Note 3)<br>R JA<br>480<br>205<br>C/W<br>Junction and Storage Temperature Range<br>TJ, Tstg<br>−55 to +150<br>C<br>~~re~~|
|2. FR−4 @ Minimum Pad.|
|3. FR−4 @ 1.0 x 1.0 Inch Pad.|
4. FR−4 @ 100 mm[2] , 1 oz. copper traces, still air. 5. FR−4 @ 500 mm[2] , 1 oz. copper traces, still air.
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**Table 2. THERMAL CHARACTERISTICS**
|**THERMAL CHARACTERISTICS (SOT−1123) (NSBA115TF3)**||||
|---|---|---|---|
|Total Device Dissipation<br>TA= 25C<br>(Note 4)<br>(Note 5)<br>Derate above 25C<br>(Note 4)<br>(Note 5)|PD|254<br>297<br>2.0<br>2.4|mW<br>mW/C|
|Thermal Resistance,<br>(Note 4)<br>Junction to Ambient<br>(Note 5)<br>~~ee~~|R JA<br>~~ee~~|493<br>421<br>~~ee~~|C/W<br>~~ee~~|
|Thermal Resistance, Junction to Lead (Note 4)<br>~~I~~|R JL<br>~~I~~|193<br>~~I~~|C/W<br>~~I~~|
|Junction and Storage Temperature Range<br>~~a~~|TJ, Tstg<br>~~a~~|−55 to +150<br>~~a~~|C<br>~~a~~|
3. FR−4 @ 1.0 x 1.0 Inch Pad.
4. FR−4 @ 100 mm[2] , 1 oz. copper traces, still air.
5. FR−4 @ 500 mm[2] , 1 oz. copper traces, still air.
**Table 3. ELECTRICAL CHARACTERISTICS** (TA = 25C, unless otherwise noted)
**Characteristic Symbol Min Typ Max Unit** ~~Po~~ **OFF CHARACTERISTICS** Collector−Base Cutoff Current ICBO nAdc (VCB = 50 V, IE = 0) − − 100 ~~a~~ Collector−Emitter Cutoff Current ICEO ~~ee~~ nAdc (VCE = 50 V, IB = 0) − − 500 ~~es~~ Emitter−Base Cutoff Current IEBO ~~ee~~ mAdc (VEB = 6.0 V, IC = 0) − − 0.1 ~~ee~~ Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = 10 A, IE = 0) 50 − − ~~ee~~ Collector−Emitter Breakdown Voltage (Note 6) V(BR)CEO Vdc (IC = 2.0 mA, IB = 0) 50 − − ~~es~~ **ON CHARACTERISTICS** ~~es ee~~ DC Current Gain (Note 6) hFE (IC = 5.0 mA, VCE = 10 V) 160 350 − ~~ee~~ Collector−Emitter Saturation Voltage (Note 6) VCE(sat) ~~ee ee~~ Vdc (IC = 10 mA, IB = 0.3 mA) − − 0.25 ~~ee~~ Input Voltage (off) ~~ee~~ Vi(off) Vdc (VCE = 5.0 V, IC = 100 A) − 0.6 0.5 ~~es~~ Input Voltage (on) Vi(on) ~~ee~~ Vdc (VCE = 0.3 V, IC = 1.0 mA) 1.5 1.0 − ~~ee~~ Output Voltage (on) VOL Vdc (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k ) − − 0.2 ~~a~~ Output Voltage (off) V ~~ee~~ OH ~~ee~~ Vdc (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k ) 4.9 − − ~~erI~~ Input Resistor ~~[ee] ee~~ R1 70 100 130 k ~~a~~ Resistor Ratio R1/R2 − − − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
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**MUN2141, MMUN2141L, MUN5141, DTA115TE, DTA115TM3, NSBA115TF3**
## **TYPICAL CHARACTERISTICS**
## **MUN2141, MMUN2141, MUN5141, DTA115TE, DTA115TM3, NSBA115TF3**
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10 1000<br>IC/IB = 10 150C<br>= ————— —— ee SE<br>Es es ss rr ee eee ee<br>25C<br>1 |a | tTa| | | | 100 eeel −55C _| | |TTAI~<br>———— —— SE See<br>25 C a ee ce po tC“‘iESCC*dTSC SPT fT<br>Ph TT<br> a ao Ee ee ee<br>150 C<br>0.1 | ee | A| dd 10 a|| Tt |<br>—————_—_—[{_—_[_—_———__—_—_—_—_ rr<br>| A −55C a a ee ee ee eee V CE = 10 V Ty<br>0.01 PCRS 1 ES<br>0 10 20 30 40 50 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 2. VCE(sat) vs. IC Figure 3. DC Current Gain<br>7 100<br>6 a f = 10 kHz —— 150C === — 25 === C ===<br>esa IE = 0 A 10 aeeNY— = =—— −55C<br>5 a | a TA = 25 C 7)eeiee<br>4 1 a 1 Uf A | | | | df ff | |<br>3 |eeAf of of | hd} UP rT 0.1 a—————ee<br>2 PA RSS SSS SS<br>PINT fp 0.01 a<br>1 Pp o>N pt SSS SSS<br>VO = 5 V<br>0 aP| ee Se 0.001 a————————<br>0 10 20 30 40 50 0 4 8 12 16 20 24 28<br>VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V)<br>VOLTAGE (V)<br>, COLLECTOR−EMITTER , DC CURRENT GAIN<br>FE<br>h<br>CE(sat)<br>V<br>, OUTPUT CAPACITANCE (pF) , COLLECTOR CURRENT (mA)<br>Cob IC<br>**----- End of picture text -----**<br>
**Figure 4. Output Capacitance**
**Figure 5. Output Current vs. Input Voltage**
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**----- Start of picture text -----**<br>
100<br>[_<br>a es es es ee<br>Rs ss es<br>−55C<br>10 25C<br>=—sseeSae<br>oy a eee ee ee ee ee ee eee eee<br>> a ce a ee ee ee ee<br>150C<br>1 )FrA<br>aa sess ss sses es ee<br>V O = 0.2 V<br>0.1 TEEPE12<br>0 10 20 30 40 50<br>IC, COLLECTOR CURRENT (mA)<br>, INPUT VOLTAGE (V)<br>in<br>V<br>**----- End of picture text -----**<br>
**Figure 6. Input Voltage vs. Output Current**
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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
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SOT−23 (TO−236) 2.90x1.30x1.00 1.90P<br>CASE 318<br>ISSUE AU<br>DATE 14 AUG 2024<br>**----- End of picture text -----**<br>
**SCALE 4:1**
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GENERIC<br>MARKING DIAGRAM*<br>XXXM �<br>�<br>1<br>XXX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br>
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking.
## **STYLES ON PAGE 2**
Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42226B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 1 OF 2**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2019
DATE 14 AUG 2024
## **SOT−23 (TO−236) 2.90x1.30x1.00 1.90P** CASE 318 ISSUE AU
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STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE 2. ANODE<br> 3. CATHODE 3. ANODE<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) 2.90x1.30x1.00 1.90P PAGE 2 OF 2<br>**----- End of picture text -----**<br>
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
## **SC−59−3 2.90x1.50x1.15, 1.90P** CASE 318D ISSUE J
## DATE 15 FEB 2024
## **GENERIC MARKING DIAGRAM***
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**----- Start of picture text -----**<br>
XXX M<br>1<br>**----- End of picture text -----**<br>
XXX = Specific Device Code M = Date Code = Pb−Free Package*
(*Note: Microdot may be in either location)
- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking.
**==> picture [200 x 72] intentionally omitted <==**
**----- Start of picture text -----**<br>
STYLE 1: STYLE 2: STYLE 3:<br>PIN 1. BASE PIN 1. ANODE PIN 1. ANODE<br>2. EMITTER 2. N.C. 2. ANODE<br>3. COLLECTOR 3. CATHODE 3. CATHODE<br>STYLE 4: STYLE 5: STYLE 6:<br>PIN 1. CATHODE PIN 1. CATHODE PIN 1. ANODE<br>2. N.C. 2. CATHODE 2. CATHODE<br>3. ANODE 3. ANODE 3. ANODE/CATHODE<br>**----- End of picture text -----**<br>
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
## **DOCUMENT NUMBER: 98ASB42664B**
## **DESCRIPTION: SC−59−3 2.90x1.50x1.15, 1.90P**
**PAGE 1 OF 1**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
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SC−70 (SOT−323)<br>CASE 419<br>ISSUE R<br>DATE 11 OCT 2022<br>SCALE 4:1<br>**----- End of picture text -----**<br>
## **GENERIC MARKING DIAGRAM**
**==> picture [116 x 78] intentionally omitted <==**
**----- Start of picture text -----**<br>
XX M �<br>�<br>1<br>XX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br>
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking.
**==> picture [492 x 120] intentionally omitted <==**
**----- Start of picture text -----**<br>
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>CANCELLED PIN 1. ANODE PIN 1. BASE PIN 1. CATHODE PIN 1. ANODE<br>2. N.C. 2. EMITTER 2. CATHODE 2. ANODE<br>3. CATHODE 3. COLLECTOR 3. ANODE 3. CATHODE<br>STYLE 6: STYLE 7: STYLE 8: STYLE 9: STYLE 10: STYLE 11:<br>PIN 1. EMITTER PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br> 2. BASE 2. EMITTER 2. SOURCE 2. CATHODE 2. ANODE 2. CATHODE<br> 3. COLLECTOR 3. COLLECTOR 3. DRAIN 3. CATHODE-ANODE 3. ANODE-CATHODE 3. CATHODE<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42819B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>DESCRIPTION: SC−70 (SOT−323) PAGE 1 OF 1<br>**----- End of picture text -----**<br>
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
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MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
## **SC75−3 1.60x0.80x0.80, 1.00P**
CASE 463 ISSUE H
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**----- Start of picture text -----**<br>
DATE 01 FEB 2024<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
GENERIC<br>MARKING DIAGRAM*<br>XXM<br>1<br>XX = Specific Device Code<br>M = Date Code<br>= Pb−Free Package<br>**----- End of picture text -----**<br>
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking.
STYLE 1: STYLE 2: STYLE 3: PIN 1. BASE PIN 1. ANODE PIN 1. ANODE 2. EMITTER 2. N/C 2. ANODE 3. COLLECTOR 3. CATHODE 3. CATHODE
STYLE 4: STYLE 5: PIN 1. CATHODE PIN 1. GATE 2. CATHODE 2. SOURCE 3. ANODE 3. DRAIN
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
**DOCUMENT NUMBER: 98ASB15184C**
**DESCRIPTION: SC75−3 1.60x0.80x0.80, 1.00P**
**PAGE 1 OF 1**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
Semiconductor Components Industries, LLC, 1996
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
## **SOT−1123 0.80x0.60x0.37, 0.35P** CASE 524AA ISSUE D
## DATE 18 JAN 2024
## **GENERIC MARKING DIAGRAM***
**==> picture [28 x 27] intentionally omitted <==**
**----- Start of picture text -----**<br>
XM<br>|<br>**----- End of picture text -----**<br>
- X = Specific Device Code M = Date Code
- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ . ”, may or may not be present. Some products may not follow the Generic Marking.
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: PIN 1. BASE PIN 1. ANODE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE 2. EMITTER 2. N/C 2. ANODE 2. CATHODE 2. SOURCE 3. COLLECTOR 3. CATHODE 3. CATHODE 3. ANODE 3. DRAIN
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
## **DOCUMENT NUMBER: 98AON23134D DESCRIPTION: SOT−1123 0.80x0.60x0.37, 0.35P**
**PAGE 1 OF 1**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
© Semiconductor Components Industries, LLC, 2006
MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS**
## **SOT−723 1.20x0.80x0.50, 0.40P** CASE 631AA ISSUE E
## DATE 24 JAN 2024
## **GENERIC MARKING DIAGRAM***
**==> picture [33 x 26] intentionally omitted <==**
**----- Start of picture text -----**<br>
XX M<br>1<br>**----- End of picture text -----**<br>
- XX = Specific Device Code M = Date Code
- *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking.
STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: PIN 1. BASE PIN 1. ANODE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE 2. EMITTER 2. N/C 2. ANODE 2. CATHODE 2. SOURCE 3. COLLECTOR 3. CATHODE 3. CATHODE 3. ANODE 3. DRAIN Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON12989D** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−723 1.20x0.80x0.50, 0.40P PAGE 1 OF 1**
**onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others.
www.onsemi.com
Semiconductor Components Industries, LLC, 2023
**onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
## **ADDITIONAL INFORMATION**
**TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales
**==> picture [232 x 43] intentionally omitted <==**
Updated at April 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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