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DTA115EET1G
Bipolar Pre-Biased / Digital Transistor, Single PNP, 50 V, 100 mA, 100 kohm, 100 kohm
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- Manufacturer: ONSEMI
- Product type: Pre-Biased / Digital Bipolar Transistors
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3 Pin
- Product Range: -
- Qualification: -
- Power Dissipation: 300mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: Single PNP
- Transistor Case Style: SC-75
- Base Input Resistor R1: 100kohm
- DC Current Gain hFE Min: 80hFE
- Base Emitter Resistor R2: 100kohm
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max NPN: -
- Collector Emitter Voltage Max PNP: 50V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.023 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 ## Digital Transistors (BRT) R1 = 100 k | R2 = 100 k **www.onsemi.com** ## **PNP Transistors with Monolithic Bias Resistor Network** ## **PIN CONNECTIONS** **==> picture [484 x 557] intentionally omitted <==** **----- Start of picture text -----**<br> PIN 3<br>COLLECTOR<br>This series of digital transistors is designed to replace a single<br>(OUTPUT)<br>device and its external resistor bias network. The Bias Resistor PIN 1 R1<br>BASE<br>Transistor (BRT) contains a single transistor with a monolithic bias<br>(INPUT) R2<br>network consisting of two resistors; a series base resistor and a base−<br>emitter resistor. The BRT eliminates these individual components by PIN 2<br>integrating them into a single device. The use of a BRT can reduce EMITTER<br>C a)<br>both system cost and board space. (GROUND)<br>Features MARKING DIAGRAMS<br>• Simplifies Circuit Design<br>• Reduces Board Space SC−59<br>• Reduces Component Count XX M CASE 318D<br>STYLE 1<br>• S and NSV Prefix for Automotive and Other Applications Requiring<br>1<br>Unique Site and Control Change Requirements; AEC-Q101 Qualified<br>and PPAP Capable<br>• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS XXX M SOT−23<br>CASE 318<br>Compliant STYLE 6<br>1<br>MAXIMUM RATINGS (TA = 25 ° C)<br>Rating Symbol Max Unit SC−70/SOT−323<br>XX M<br>CASE 419<br>Collector−Base Voltage VCBO 50 Vdc STYLE 3<br>Collector−Emitter Voltage VCEO 50 Vdc 1<br>Collector Current − Continuous IC 100 mAdc SC−75<br>Input Forward Voltage VIN(fwd) 40 Vdc XX M CASE 463<br>STYLE 1<br>Input Reverse Voltage VIN(rev) 10 Vdc 1<br>Stresses exceeding those listed in the Maximum Ratings table may damage the SOT−723<br>device. If any of these limits are exceeded, device functionality should not be XX M CASE 631AA<br>= assumed, damage may occur and reliability may be affected. ae ® 1 STYLE 1<br>XXX = Specific Device Code<br>M = Date Code*<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>*Date Code orientation may vary depending up-<br>on manufacturing location.<br>ORDERING INFORMATION<br>See detailed ordering, marking, and shipping information in<br>the package dimensions section on page 2 of this data sheet.<br>© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:<br>February, 2018 − Rev. 6 DTA115E/D<br>**----- End of picture text -----**<br> See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: **DTA115E/D** **MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3** ## **Table 1. ORDERING INFORMATION** |**Table 1. ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Part Marking**|**Package**|**Shipping**†| |MUN2136T1G|6N|SC−59<br>(Pb−Free)|3000 / Tape & Reel| |MMUN2136LT1G, NSVMMUN2136LT1G*|ACG|SOT−23<br>(Pb−Free)|3000 / Tape & Reel| |MUN5136T1G, NSVMUN5136T1G*|6N|SC−70/SOT−323<br>(Pb−Free)|3000 / Tape & Reel| |DTA115EET1G, NSVDTA115EET1G*|6N|SC−75<br>(Pb−Free)|3000 / Tape & Reel| |DTA115EM3T5G|6N|SOT−723<br>(Pb−Free)|8000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. **==> picture [243 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>200<br>(1) (2) (3) (4)<br>150<br>100<br>50<br>0<br>−50 −25 0 25 50 75 100 125 150<br>AMBIENT TEMPERATURE ( ° C)<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br> (1) SC−75 and SC−70/SOT323; Minimum Pad (2) SC−59; Minimum Pad - (3) SOT−23; Minimum Pad - (4) SOT−723; Minimum Pad **Figure 1. Derating Curve** **www.onsemi.com** **2** **MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3** ## **Table 2. THERMAL CHARACTERISTICS** |**Table 2. THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |**THERMAL CHARACTERISTICS (SC−59) (MUN2136)**|||| |Total Device Dissipation<br>TA= 25°C<br>(Note 1)<br>(Note 2)<br>Derate above 25°C<br>(Note 1)<br>(Note 2)|PD|230<br>338<br>1.8<br>2.7|mW<br>mW/°C| |Thermal Resistance,<br>(Note 1)<br>Junction to Ambient<br>(Note 2)|R�JA|540<br>370|°C/W| |Thermal Resistance,<br>(Note 1)<br>Junction to Lead<br>(Note 2)|R�JL|264<br>287|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| |**THERMAL CHARACTERISTICS (SOT−23) (MMUN2136L)**|||| |Total Device Dissipation<br>TA= 25°C<br>(Note 1)<br>(Note 2)<br>Derate above 25°C<br>(Note 1)<br>(Note 2)|PD|246<br>400<br>2.0<br>3.2|mW<br>mW/°C| |Thermal Resistance,<br>(Note 1)<br>Junction to Ambient<br>(Note 2)|R�JA|508<br>311|°C/W| |Thermal Resistance,<br>(Note 1)<br>Junction to Lead<br>(Note 2)|R�JL|174<br>208|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| |**THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5136)**|||| |Total Device Dissipation<br>TA= 25°C<br>(Note 1)<br>(Note 2)<br>Derate above 25°C<br>(Note 1)<br>(Note 2)|PD|202<br>310<br>1.6<br>2.5|mW<br>mW/°C| |Thermal Resistance,<br>(Note 1)<br>Junction to Ambient<br>(Note 2)|R�JA|618<br>403|°C/W| |Thermal Resistance,<br>(Note 1)<br>Junction to Lead<br>(Note 2)|R�JL|280<br>332|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| |**THERMAL CHARACTERISTICS (SC−75) (DTA115EE)**|||| |Total Device Dissipation<br>TA= 25°C<br>(Note 1)<br>(Note 2)<br>Derate above 25°C<br>(Note 1)<br>(Note 2)|PD|200<br>300<br>1.6<br>2.4|mW<br>mW/°C| |Thermal Resistance,<br>(Note 1)<br>Junction to Ambient<br>(Note 2)|R�JA|600<br>400|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| |**THERMAL CHARACTERISTICS (SOT−723) (DTA115EM3)**|||| |Total Device Dissipation<br>TA= 25°C<br>(Note 1)<br>(Note 2)<br>Derate above 25°C<br>(Note 1)<br>(Note 2)|PD|260<br>600<br>2.0<br>4.8|mW<br>mW/°C| |Thermal Resistance,<br>(Note 1)<br>Junction to Ambient<br>(Note 2)|R�JA|480<br>205|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. **www.onsemi.com** **3** **MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3** **Table 3. ELECTRICAL CHARACTERISTICS** (TA = 25 ° C, unless otherwise noted) |**Table 3. ELECTRICAL CHARACTERISTICS**(TA= 25°C, unless otherwi|se noted)||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Base Cutoff Current<br>(VCB= 50 V, IE= 0)|ICBO|−|−|100|nAdc| |Collector−Emitter Cutoff Current<br>(VCE= 50 V, IB= 0)|ICEO|−|−|500|nAdc| |Emitter−Base Cutoff Current<br>(VEB= 6.0 V, IC= 0)|IEBO|−|−|0.05|mAdc| |Collector−Base Breakdown Voltage<br>(IC= 10�A, IE= 0)|V(BR)CBO|50|−|−|Vdc| |Collector−Emitter Breakdown Voltage (Note 3)<br>(IC= 2.0 mA, IB= 0)|V(BR)CEO|50|−|−|Vdc| |**ON CHARACTERISTICS**|||||| |DC Current Gain (Note 3)<br>(IC= 5.0 mA, VCE= 10 V)|hFE|80|150|−|| |Collector−Emitter Saturation Voltage (Note 3)<br>(IC= 10 mA, IB= 0.3 mA)|VCE(sat)|−|−|0.25|Vdc| |Input Voltage (off)<br>(VCE= 5.0 V, IC= 100�A)|Vi(off)|−|1.2|0.5|Vdc| |Input Voltage (on)<br>(VCE= 0.3 V, IC= 1.0 mA)|Vi(on)|3.0|1.6|−|Vdc| |Output Voltage (on)<br>(VCC= 5.0 V, VB= 5.5 V, RL= 1.0 k�)|VOL|−|−|0.2|Vdc| |Output Voltage (off)<br>(VCC= 5.0 V, VB= 0.5 V, RL= 1.0 k�)|VOH|4.9|−|−|Vdc| |Input Resistor|R1|70|100|130|k�| |Resistor Ratio|R1/R2|0.8|1.0|1.2|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. **www.onsemi.com** **4** **MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3** ## **TYPICAL CHARACTERISTICS MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3** **==> picture [491 x 382] intentionally omitted <==** **----- Start of picture text -----**<br> 10 1000<br>IC/IB = 10 150 ° C 25 ° C<br>1 100 −55 ° C<br>25 ° C<br>150 ° C<br>0.1 10<br>−55 ° C V CE = 10 V<br>0.01 1<br>0 10 20 30 40 50 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 2. VCE(sat) vs. IC Figure 3. DC Current Gain<br>12 100<br>150 ° C<br>f = 10 kHz<br>10 I E = 0 A −55 ° C<br>TA = 25 ° C 10<br>8 °<br>25 C<br>6 1<br>4<br>0.1<br>2<br>V O = 5 V<br>0 0.01<br>0 10 20 30 40 50 0 4 8 12 16 20 24 28<br>VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V)<br>VOLTAGE (V)<br>, COLLECTOR−EMITTER , DC CURRENT GAIN<br>FE<br>h<br>CE(sat)<br>V<br>, OUTPUT CAPACITANCE (pF) , COLLECTOR CURRENT (mA)<br>Cob IC<br>**----- End of picture text -----**<br> **Figure 4. Output Capacitance** **Figure 5. Output Current vs. Input Voltage** **==> picture [241 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>−55 ° C<br>25 ° C<br>10<br>150 ° C<br>1<br>V O = 0.2 V<br>0.1<br>0 10 20 30 40 50<br>IC, COLLECTOR CURRENT (mA)<br>, INPUT VOLTAGE (V)<br>in<br>V<br>**----- End of picture text -----**<br> **Figure 6. Input Voltage vs. Output Current** **www.onsemi.com** **5** **MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3** ## **PACKAGE DIMENSIONS** **SC−59** CASE 318D−04 ISSUE H **==> picture [409 x 154] intentionally omitted <==** **----- Start of picture text -----**<br> D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>HE 1 2 E A1A 0.011.00 0.061.15 0.101.30 0.0010.039 0.0450.002 0.0510.004<br>b 0.35 0.43 0.50 0.014 0.017 0.020<br>c 0.09 0.14 0.18 0.003 0.005 0.007<br>D 2.70 2.90 3.10 0.106 0.114 0.122<br>b E 1.30 1.50 1.70 0.051 0.059 0.067<br>e 1.70 1.90 2.10 0.067 0.075 0.083<br>e<br>L 0.20 0.40 0.60 0.008 0.016 0.024<br>H E 2.50 2.80 3.00 0.099 0.110 0.118<br>STYLE 1:<br>C PIN 1. BASE<br>A 2. EMITTER<br>3. COLLECTOR<br>L<br>A1<br>**----- End of picture text -----**<br> ## **SOLDERING FOOTPRINT*** **==> picture [192 x 151] intentionally omitted <==** **----- Start of picture text -----**<br> 0.95<br>0.95 0.037<br>0.037<br>2.4<br>0.094<br>1.0<br>0.039<br>0.8<br>SCALE 10:1<br>0.031 � inches [mm] �<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **6** **MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3** ## **PACKAGE DIMENSIONS** **SOT−23 (TO−236)** CASE 318−08 ISSUE AR **==> picture [469 x 183] intentionally omitted <==** **----- Start of picture text -----**<br> D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>3 THE BASE MATERIAL.<br>E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>T 0 � −−− 10 � 0 � −−− 10 �<br>A1 SIDE VIEW SEE VIEW C c STYLE 6:<br>END VIEW PIN 1. BASE<br>2. EMITTER<br>3. COLLECTOR<br>**----- End of picture text -----**<br> ## **RECOMMENDED** **SOLDERING FOOTPRINT*** **==> picture [142 x 106] intentionally omitted <==** **----- Start of picture text -----**<br> 3X<br>2.90 0.90<br>3X 0.80 0.95<br>PITCH<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **7** **MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3** ## **PACKAGE DIMENSIONS** **SC−70 (SOT−323)** CASE 419−04 ISSUE N ||||**H**|||**A**<br>**D**<br>**e1**<br>**b**<br>**e**<br>**E**<br>**3**<br>**2**|**A**<br>**D**<br>**e1**<br>**b**<br>**e**<br>**E**<br>**3**<br>**2**|**A**<br>**D**<br>**e1**<br>**b**<br>**e**<br>**E**<br>**3**<br>**2**|**A**<br>**D**<br>**e1**<br>**b**<br>**e**<br>**E**<br>**3**<br>**2**|**A**<br>**D**<br>**e1**<br>**b**<br>**e**<br>**E**<br>**3**<br>**2**|**A**<br>**D**<br>**e1**<br>**b**<br>**e**<br>**E**<br>**3**<br>**2**|**A**<br>**D**<br>**e1**<br>**b**<br>**e**<br>**E**<br>**3**<br>**2**||||**c**<br>**L**<br>N|OTES:<br>1. DIM<br>2. CON|ENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>TROLLING DIMENSION: INCH.|ENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>TROLLING DIMENSION: INCH.|ENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>TROLLING DIMENSION: INCH.|ENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>TROLLING DIMENSION: INCH.|ENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>TROLLING DIMENSION: INCH.|ENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>TROLLING DIMENSION: INCH.| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||||||||||||||| ||||||||||||||||||||||||| |||||**E**|||||||||||||||||||| ||||||||||||||||||**DIM**|**MILLIMETERS**|||**INCHES**||| |||||||||||||||||||**MIN**|**NOM**|**MAX**|**MIN**|**NOM**|**MAX**| ||||||**1**|**3**||||**2**|||||||||||||| ||||||||||||||||||**A**|0.80|0.90|1.00|0.032|0.035|0.040| ||||||||||||||||||**A1**|0.00|0.05|0.10|0.000|0.002|0.004| ||||||||||||||||||**A2**|0.70 REF|||0.028 REF||| ||||||||||||||||||**b**|0.30|0.35|0.40|0.012|0.014|0.016| ||||||||||||||||||**c**|0.10|0.18|0.25|0.004|0.007|0.010| ||||||||||||||||||**D**|1.80|2.10|2.20|0.071|0.083|0.087| ||||||||||||||||||||||||| ||||||||||||||||||**E**|1.15|1.24|1.35|0.045|0.049|0.053| ||||||||||||||||||**e**|1.20|1.30|1.40|0.047|0.051|0.055| ||||||||||||||||||**e1**|0.65 BSC|||0.026 BSC||| ||||||||||||||||||**L**|0.20|0.38|0.56|0.008|0.015|0.022| |||||||||||||||||**L**|**HE**|2.00|2.10|2.40|0.079|0.083|0.095| ||||||||||||||||||STYLE 3<br>PIN 1<br>2<br>3|:<br>. BASE<br>. EMITTER<br>. COLLECTOR|||||| ||||||||||||||**A2**||||||||||| ||||||||||||||||||||||||| ||0.05 (0.002)||||||||||||||||||||||| ||||||**A1**||||||||||||||||||| ## **SOLDERING FOOTPRINT*** **==> picture [172 x 148] intentionally omitted <==** **----- Start of picture text -----**<br> 0.65<br>0.65 0.025<br>0.025<br>1.9<br>0.075<br>0.9<br>0.035<br>0.7<br>0.028<br>SCALE 10:1<br>� inches [mm] �<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **8** **MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3** ## **PACKAGE DIMENSIONS** **==> picture [70 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> SC−75/SOT−416<br>CASE 463<br>ISSUE G<br>**----- End of picture text -----**<br> **==> picture [214 x 157] intentionally omitted <==** **----- Start of picture text -----**<br> −E−<br>2<br>3<br>e −D−<br>1<br>b 3 PL<br>0.20 (0.008) M D<br>HE 0.20 (0.008) E<br>C<br>A<br>L A1<br>**----- End of picture text -----**<br> **==> picture [158 x 144] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 0.70 0.80 0.90 0.027 0.031 0.035<br>A1 0.00 0.05 0.10 0.000 0.002 0.004<br>b 0.15 0.20 0.30 0.006 0.008 0.012<br>C 0.10 0.15 0.25 0.004 0.006 0.010<br>D 1.55 1.60 1.65 0.059 0.063 0.067<br>E 0.70 0.80 0.90 0.027 0.031 0.035<br>e 1.00 BSC 0.04 BSC<br>L 0.10 0.15 0.20 0.004 0.006 0.008<br>HE 1.50 1.60 1.70 0.061 0.063 0.065<br>STYLE 1:<br>PIN 1. BASE<br> 2. EMITTER<br> 3. COLLECTOR<br>**----- End of picture text -----**<br> ## **SOLDERING FOOTPRINT*** **==> picture [178 x 136] intentionally omitted <==** **----- Start of picture text -----**<br> 0.356<br>0.014<br>1.803 0.787<br>0.071 0.031<br>0.508<br>0.020 1.000<br>0.039<br>SCALE 10:1<br>� inches [mm] �<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **www.onsemi.com** **9** **MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3** ## **PACKAGE DIMENSIONS** **==> picture [433 x 371] intentionally omitted <==** **----- Start of picture text -----**<br> SOT−723<br>CASE 631AA<br>ISSUE D<br>−X− NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME<br>D Y14.5M, 1994.<br>b1 A 2. CONTROLLING DIMENSION: MILLIMETERS.<br>3 −Y− 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD<br>FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM<br>THICKNESS OF BASE MATERIAL.<br>E H E 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS OR GATE BURRS.<br>1 2<br>af 2X b MILLIMETERS<br>C DIM MIN NOM MAX<br>2X e 0.08 X Y A 0.45 0.50 0.55<br>SIDE VIEW b 0.15 0.21 0.27<br>TOP VIEW b1 0.25 0.31 0.37<br>C 0.07 0.12 0.17<br>3X L D 1.15 1.20 1.25<br>1 E 0.75 0.80 0.85<br>e 0.40 BSC<br>H E 1.15 1.20 1.25<br>L 0.29 REF<br>L2 0.15 0.20 0.25<br>3X L2 ys SOLDERING FOOTPRINT*RECOMMENDED STYLE 1:PIN 1. 2. BASEEMITTER<br>BOTTOM VIEW 3. COLLECTOR<br>2X<br>0.40<br>2X 0.27<br>wat<br>PACKAGE<br>OUTLINE<br>NEE]<br>1.50<br>3X 0.52 p e es 0.36 |<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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Updated at April 24, 2026
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