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DTA114YET1G
Bipolar Pre-Biased / Digital Transistor, Single PNP, 50 V, 100 mA, 10 kohm, 47 kohm
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- Manufacturer: ONSEMI
- Product type: Pre-Biased / Digital Bipolar Transistors
- Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm; Resisto
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3 Pin
- Product Range: -
- Qualification: -
- Power Dissipation: 300mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: Single PNP
- Transistor Case Style: SC-75
- Base Input Resistor R1: 10kohm
- DC Current Gain hFE Min: 80hFE
- Base Emitter Resistor R2: 47kohm
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max NPN: -
- Collector Emitter Voltage Max PNP: 50V
| Delivery and price | |
|---|---|
| Units per pack | 33000 |
| Price | 0.012 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3 ## **www.onsemi.com**[@] **PIN CONNECTIONS** ## Digital Transistors (BRT) R1 = 10 k R2 = 47 k ## **PNP Transistors with Monolithic Bias Resistor Network** PIN 3 COLLECTOR (OUTPUT) PIN 1 R1 BASE (INPUT) R2 ~~@~~ PIN 2 EMITTER (GROUND) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. ## **Features** **MARKING DIAGRAMS** - Simplifies Circuit Design **==> picture [483 x 333] intentionally omitted <==** **----- Start of picture text -----**<br> Simplifies Circuit Design<br>• Reduces Board Space SC−59<br>• Reduces Component Count XX M CASE 318D<br>STYLE 1<br>• S and NSV Prefix for Automotive and Other Applications Requiring<br>1<br>Unique Site and Control Change Requirements; AEC−Q101 2<br>Qualified and PPAP Capable<br>• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS XXX M SOT−23<br>CASE 318<br>Compliant STYLE 6<br>1<br>MAXIMUM RATINGS (TA = 25 ° C)<br>SC−70/SOT−323<br>Rating Symbol Max Unit XX M CASE 419<br>Collector−Base Voltage VCBO 50 Vdc STYLE 3<br>1<br>Collector−Emitter Voltage VCEO 50 Vdc<br>SC−75<br>Collector Current − Continuous IC 100 mAdc XX M CASE 463<br>STYLE 1<br>Input Forward Voltage VIN(fwd) 40 Vdc 1<br>— Input Reverse Voltage VIN(rev) 6 Vdc a : SOT−723<br>Stresses exceeding those listed in the Maximum Ratings table may damage the XX M CASE 631AA<br>device. If any of these limits are exceeded, device functionality should not be ee 1 STYLE 1<br>assumed, damage may occur and reliability may be affected.<br>SOT−1123<br>X M 1 CASE 524AA<br>STYLE 1<br>XXX = Specific Device Code<br>M = Date Code*<br>= Pb−Free Package<br>(Note: Microdot may be in either location)<br>**----- End of picture text -----**<br> *Date Code orientation may vary depending upon manufacturing location. ## **ORDERING INFORMATION** See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: **DTA114Y/D** **1** © Semiconductor Components Industries, LLC, 2012 **October, 2016 − Rev. 6** **MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3** **Table 1. ORDERING INFORMATION** |**Table 1. ORDERING INFORMATION**|||| |---|---|---|---| |**Device**|**Part Marking**|**Package**|**Shipping**†| |MUN2114T1G, SMUN2114T1G*|6D|SC−59|3,000 / Tape & Reel| |MMUN2114LT1G, SMMUN2114LT1G*|A6D|SOT−23|3,000 / Tape & Reel| |MMUN2114LT3G, NSVMMUN2114LT3G*|A6D|SOT−23|10,000 / Tape & Reel| |MUN5114T1G, SMUN5114T1G*|6D|SC−70/SOT−323|3,000 / Tape & Reel| |SMUN5114T3G|6D|SC−70/SOT−323|10,000 / Tape & Reel| |DTA114YET1G, SDTA114YET1G*|6D|SC−75|3,000 / Tape & Reel| |DTA114YM3T5G, NSVDTA114YM3T5G*|6D|SOT−723|8,000 / Tape & Reel| |NSBA114YF3T5G|K|SOT−1123|8,000 / Tape & Reel| †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **==> picture [243 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>200<br>(1) (2) (3) (4) (5)<br>150<br>100<br>50<br>0<br>−50 −25 0 25 50 75 100 125 150<br>AMBIENT TEMPERATURE ( ° C)<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br> (1) SC−75 and SC−70/SOT−323; Minimum Pad (2) SC−59; Minimum Pad (3) SOT−23; Minimum Pad (4) SOT−1123; 100 mm[2] , 1 oz. copper trace - (5) SOT−723; Minimum Pad **Figure 1. Derating Curve** **www.onsemi.com** **2** **MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3** ## **Table 2. THERMAL CHARACTERISTICS** |**Table 2. THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |**THERMAL CHARACTERISTICS (SC−59) (MUN2114)**|||| |Total Device Dissipation<br>TA= 25°C<br>(Note 1)<br>(Note 2)<br>Derate above 25°C<br>(Note 1)<br>(Note 2)|PD|230<br>338<br>1.8<br>2.7|mW<br>mW/°C| |Thermal Resistance,<br>(Note 1)<br>Junction to Ambient<br>(Note 2)|R�JA|540<br>370|°C/W| |Thermal Resistance,<br>(Note 1)<br>Junction to Lead<br>(Note 2)|R�JL|264<br>287|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| |**THERMAL CHARACTERISTICS (SOT−23) (MMUN2114L)**|||| |Total Device Dissipation<br>TA= 25°C<br>(Note 1)<br>(Note 2)<br>Derate above 25°C<br>(Note 1)<br>(Note 2)|PD|246<br>400<br>2.0<br>3.2|mW<br>mW/°C| |Thermal Resistance,<br>(Note 1)<br>Junction to Ambient<br>(Note 2)|R�JA|508<br>311|°C/W| |Thermal Resistance,<br>(Note 1)<br>Junction to Lead<br>(Note 2)|R�JL|174<br>208|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| |**THERMAL CHARACTERISTICS (SC−70/SOT−323) (MUN5114)**|||| |Total Device Dissipation<br>TA= 25°C<br>(Note 1)<br>(Note 2)<br>Derate above 25°C<br>(Note 1)<br>(Note 2)|PD|202<br>310<br>1.6<br>2.5|mW<br>mW/°C| |Thermal Resistance,<br>(Note 1)<br>Junction to Ambient<br>(Note 2)|R�JA|618<br>403|°C/W| |Thermal Resistance,<br>(Note 1)<br>Junction to Lead<br>(Note 2)|R�JL|280<br>332|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| |**THERMAL CHARACTERISTICS (SC−75) (DTA114YE)**|||| |Total Device Dissipation<br>TA= 25°C<br>(Note 1)<br>(Note 2)<br>Derate above 25°C<br>(Note 1)<br>(Note 2)|PD|200<br>300<br>1.6<br>2.4|mW<br>mW/°C| |Thermal Resistance,<br>(Note 1)<br>Junction to Ambient<br>(Note 2)|R�JA|600<br>400|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| |**THERMAL CHARACTERISTICS (SOT−723) (DTA114YM3)**|||| |Total Device Dissipation<br>TA= 25°C<br>(Note 1)<br>(Note 2)<br>Derate above 25°C<br>(Note 1)<br>(Note 2)|PD|260<br>600<br>2.0<br>4.8|mW<br>mW/°C| |Thermal Resistance,<br>(Note 1)<br>Junction to Ambient<br>(Note 2)|R�JA|480<br>205|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. 3. FR−4 @ 100 mm[2] , 1 oz. copper traces, still air. 4. FR−4 @ 500 mm[2] , 1 oz. copper traces, still air. **www.onsemi.com** **3** **MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3** ## **Table 2. THERMAL CHARACTERISTICS** |**Table 2. THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Max**|**Unit**| |**THERMAL CHARACTERISTICS (SOT−1123) (NSBA114YF3)**|||| |Total Device Dissipation<br>TA= 25°C<br>(Note 3)<br>(Note 4)<br>Derate above 25°C<br>(Note 3)<br>(Note 4)|PD|254<br>297<br>2.0<br>2.4|mW<br>mW/°C| |Thermal Resistance,<br>(Note 3)<br>Junction to Ambient<br>(Note 4)|R�JA|493<br>421|°C/W| |Thermal Resistance, Junction to Lead<br>(Note 3)|R�JL|193|°C/W| |Junction and Storage Temperature Range|TJ, Tstg|−55 to +150|°C| 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 Inch Pad. 3. FR−4 @ 100 mm[2] , 1 oz. copper traces, still air. 4. FR−4 @ 500 mm[2] , 1 oz. copper traces, still air. **Table 3. ELECTRICAL CHARACTERISTICS** (TA = 25 ° C, unless otherwise noted) |**Table 3. ELECTRICAL CHARACTERISTICS**(TA= 25°C, unless otherwis|e noted)||||| |---|---|---|---|---|---| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||| |Collector−Base Cutoff Current<br>(VCB= 50 V, IE= 0)|ICBO|−|−|100|nAdc| |Collector−Emitter Cutoff Current<br>(VCE= 50 V, IB= 0)|ICEO|−|−|500|nAdc| |Emitter−Base Cutoff Current<br>(VEB= 6.0 V, IC= 0)|IEBO|−|−|0.2|mAdc| |Collector−Base Breakdown Voltage<br>(IC= 10�A, IE= 0)|V(BR)CBO|50|−|−|Vdc| |Collector−Emitter Breakdown Voltage (Note 5)<br>(IC= 2.0 mA, IB= 0)|V(BR)CEO|50|−|−|Vdc| |**ON CHARACTERISTICS**|||||| |DC Current Gain (Note 5)<br>(IC= 5.0 mA, VCE= 10 V)|hFE|80|140|−|| |Collector�Emitter Saturation Voltage (Note 5)<br>(IC= 10 mA, IB= 0.3 mA)|VCE(sat)|−|−|0.25|Vdc| |Input Voltage (off)<br>(VCE= 5.0 V, IC= 100�A)|Vi(off)|−|0.7|0.5|Vdc| |Input Voltage (on)<br>(VCE= 0.2 V, IC= 1.0 mA)|Vi(on)|1.4|0.9|−|Vdc| |Output Voltage (on)<br>(VCC= 5.0 V, VB= 2.5 V, RL= 1.0 k�)|VOL|−|−|0.2|Vdc| |Output Voltage (off)<br>(VCC= 5.0 V, VB= 0.5 V, RL= 1.0 k�)|VOH|4.9|−|−|Vdc| |Input Resistor|R1|7.0|10|13|k�| |Resistor Ratio|R1/R2|0.17|0.21|0.25|| 5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle � 2%. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **4** **MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3** ## **TYPICAL CHARACTERISTICS MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3** **==> picture [488 x 609] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>1000<br>IC/IB = 10 VCE = 10 V 25 ° C 150 ° C<br>25 ° C 100 −55 ° C<br>0.1 150 ° C<br>10<br>−55 ° C<br>0.01 1<br>0 10 20 30 40 50 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 2. VCE(sat) vs. IC Figure 3. DC Current Gain<br>10 100<br>9 f = 10 kHz °<br>−55 C<br>8 ITEA = = 250 A ° C 10<br>7<br>6 1<br>5 25 ° C<br>4 0.1<br>3 150 ° C<br>2<br>0.01<br>1 VO = 5 V<br>0 0.001<br>0 10 20 30 40 50 0 1 2 3 4 5 6 7<br>VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V)<br>Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage<br>100<br>10 25 ° C<br>−55 ° C<br>1<br>150 ° C<br>VO = 0.2 V<br>0.1<br>0 10 20 30 40 50<br>IC, COLLECTOR CURRENT (mA)<br>, DC CURRENT GAIN<br>FE<br>h<br>, COLLECTOR−EMITTER VOLTAGE (V)<br>CE(sat)<br>V<br>, OUTPUT CAPACITANCE (pF)Cob , COLLECTOR CURRENT (mA)IC<br>, INPUT VOLTAGE (V)<br>in<br>V<br>**----- End of picture text -----**<br> **Figure 6. Input Voltage vs. Output Current** **www.onsemi.com** **5** **MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3** ## **TYPICAL CHARACTERISTICS NSBA114YF3** **==> picture [488 x 390] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>1000<br>IC/IB = 10 VCE = 10 V<br>25 ° C 25 ° C 150 ° C<br>100<br>−55 ° C<br>150 ° C<br>0.1<br>−55 ° C 10<br>0.01 1<br>0 10 20 30 40 50 0.1 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Figure 7. VCE(sat) vs. IC Figure 8. DC Current Gain<br>7 100<br>f = 10 kHz<br>6 ITEA = 0 A = 25 ° C 10 −55 ° C<br>5<br>1<br>4<br>3 0.1 25 ° C<br>2<br>0.01<br>1 150 ° C<br>VO = 5 V<br>0 0.001<br>0 10 20 30 40 50 0 1 2 3 4 5 6 7 12 11 10 11<br>VR, REVERSE VOLTAGE (V) Vin, INPUT VOLTAGE (V)<br>, DC CURRENT GAIN<br>FE<br>h<br>, COLLECTOR−EMITTER VOLTAGE (V)<br>CE(sat)<br>V<br>, OUTPUT CAPACITANCE (pF)Cob , COLLECTOR CURRENT (mA)IC<br>**----- End of picture text -----**<br> **Figure 9. Output Capacitance** **Figure 10. Output Current vs. Input Voltage** **==> picture [235 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>10 25 ° C −55 ° C<br>1<br>150 ° C<br>VO = 0.2 V<br>0.1<br>0 10 20 30 40 50<br>IC, COLLECTOR CURRENT (mA)<br>, INPUT VOLTAGE (V)<br>in<br>V<br>**----- End of picture text -----**<br> **Figure 11. Input Voltage vs. Output Current** **www.onsemi.com** **6** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [494 x 668] intentionally omitted <==** **----- Start of picture text -----**<br> SOT−23 (TO−236)<br>CASE 318−08<br>ISSUE AS<br>2 DATE 30 JAN 2018<br>SCALE 4:1<br>D NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.<br>0.25 MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF<br>“a 3 t = THE BASE MATERIAL.<br>| E HE T 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,PROTRUSIONS, OR GATE BURRS.<br>1 2<br>MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>L A 0.89 1.00 1.11 0.035 0.039 0.044<br>3X b L1 A1b 0.010.37 0.060.44 0.100.50 0.0000.015 0.0020.017 0.0040.020<br>e VIEW C c 0.08 0.14 0.20 0.003 0.006 0.008<br>TOP VIEW D 2.80 2.90 3.04 0.110 0.114 0.120<br>E 1.20 1.30 1.40 0.047 0.051 0.055<br>e 1.78 1.90 2.04 0.070 0.075 0.080<br>L 0.30 0.43 0.55 0.012 0.017 0.022<br>A L1 0.35 0.54 0.69 0.014 0.021 0.027<br>H E 2.10 2.40 2.64 0.083 0.094 0.104<br>= T 0 ° −−− 10 ° 0 ° −−− 10 °<br>a A1 SIDE VIEW SEE VIEW C c<br>GENERIC<br>END VIEW<br>MARKING DIAGRAM*<br>RECOMMENDED<br>SOLDERING FOOTPRINT XXXM<br>1<br>2.90 i 0.903X XXX = Specific Device Code oo<br>M = Date Code<br>= Pb−Free Package<br>LO | cr ,<br>*This information is generic. Please refer to<br>3X 0.80 a) LL 0.95 device data sheet for actual part marking.<br>PITCH Pb−Free indicator, “G” or microdot “ ”, |<br>DIMENSIONS: MILLIMETERS may or may not be present.<br>STYLE 1 THRU 5: STYLE 6: STYLE 7: STYLE 8:<br>CANCELLED PIN 1. BASE PIN 1. EMITTER PIN 1. ANODE<br>2. EMITTER 2. BASE 2. NO CONNECTION<br>3. COLLECTOR 3. COLLECTOR 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11: STYLE 12: STYLE 13: STYLE 14:<br>PIN 1. ANODE PIN 1. DRAIN PIN 1. ANODE PIN 1. CATHODE PIN 1. SOURCE PIN 1. CATHODE<br>2. ANODE 2. SOURCE 2. CATHODE 2. CATHODE 2. DRAIN 2. GATE<br>3. CATHODE 3. GATE 3. CATHODE−ANODE 3. ANODE 3. GATE 3. ANODE<br>STYLE 15: STYLE 16: STYLE 17: STYLE 18: STYLE 19: STYLE 20:<br>PIN 1. GATE PIN 1. ANODE PIN 1. NO CONNECTION PIN 1. NO CONNECTION PIN 1. CATHODE PIN 1. CATHODE<br>2. CATHODE 2. CATHODE 2. ANODE 2. CATHODE 2. ANODE 2. ANODE<br>3. ANODE 3. CATHODE 3. CATHODE 3. ANODE 3. CATHODE−ANODE 3. GATE<br>STYLE 21: STYLE 22: STYLE 23: STYLE 24: STYLE 25: STYLE 26:<br>PIN 1. GATE PIN 1. RETURN PIN 1. ANODE PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE<br>2. SOURCE 2. OUTPUT 2. ANODE 2. DRAIN 2. CATHODE 2. ANODE<br>3. DRAIN 3. INPUT 3. CATHODE 3. SOURCE 3. GATE 3. NO CONNECTION<br>STYLE 27: STYLE 28:<br>PIN 1. CATHODE PIN 1. ANODE<br> 2. CATHODE 2. ANODE<br> 3. CATHODE 3. ANODE<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98ASB42226B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>DESCRIPTION: SOT−23 (TO−236) PAGE 1 OF 1<br>aes<br>ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br> www.onsemi.com © Semiconductor Components Industries, LLC, 2019 MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [275 x 39] intentionally omitted <==** **----- Start of picture text -----**<br> SC−59<br>CASE 318D−04<br>ISSUE H<br>DATE 28 JUN 2012<br>**----- End of picture text -----**<br> **==> picture [216 x 363] intentionally omitted <==** **----- Start of picture text -----**<br> SCALE 2:1<br>ros D<br>3<br>HE 1 2 E<br>b<br>e<br>C<br>A<br>L<br>A1<br>SOLDERING FOOTPRINT*<br>0.95<br>a 0.95 0.037<br>0.037<br>2.4<br>ae<br>0.094<br>1.0<br>0.039<br>0.8 SCALE 10:1 mm<br>0.031 - A inches<br>**----- End of picture text -----**<br> *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **==> picture [193 x 107] intentionally omitted <==** **----- Start of picture text -----**<br> NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>— MILLIMETERS INCHES<br>DIM MIN NOM MAX MIN NOM MAX<br>A 1.00 1.15 1.30 0.039 0.045 0.051<br>A1 0.01 0.06 0.10 0.001 0.002 0.004<br>b 0.35 0.43 0.50 0.014 0.017 0.020<br>c 0.09 0.14 0.18 0.003 0.005 0.007<br>D 2.70 2.90 3.10 0.106 0.114 0.122<br>E 1.30 1.50 1.70 0.051 0.059 0.067<br>e 1.70 1.90 2.10 0.067 0.075 0.083<br>L 0.20 0.40 0.60 0.008 0.016 0.024<br>H E 2.50 2.80 3.00 0.099 0.110 0.118<br>**----- End of picture text -----**<br> **==> picture [150 x 128] intentionally omitted <==** **----- Start of picture text -----**<br> GENERIC<br>MARKING DIAGRAM<br>XXX M<br>1 =<br>XXX = Specific Device Code<br>M = Date Code<br>= Pb−Free Package*<br>(*Note: Microdot may be in either location)<br>**----- End of picture text -----**<br> *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. **==> picture [201 x 72] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1: STYLE 2: STYLE 3:<br>PIN 1. BASE PIN 1. ANODE PIN 1. ANODE<br>2. EMITTER 2. N.C. 2. ANODE<br>3. COLLECTOR 3. CATHODE 3. CATHODE<br>STYLE 4: STYLE 5: STYLE 6:<br>PIN 1. CATHODE PIN 1. CATHODE PIN 1. ANODE<br>2. N.C. 2. CATHODE 2. CATHODE<br>3. ANODE 3. ANODE 3. ANODE/CATHODE<br>**----- End of picture text -----**<br> Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB42664B** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SC−59 PAGE 1 OF 1** ~~aes~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [37 x 36] intentionally omitted <==** **SC−70 (SOT−323)** CASE 419 ISSUE P **==> picture [81 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> DATE 07 OCT 2021<br>**----- End of picture text -----**<br> **SCALE 4:1** ## **GENERIC MARKING DIAGRAM** **==> picture [116 x 78] intentionally omitted <==** **----- Start of picture text -----**<br> XX M �<br>�<br>1<br>XX = Specific Device Code<br>M = Date Code<br>� = Pb−Free Package<br>**----- End of picture text -----**<br> *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. **==> picture [191 x 63] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1: STYLE 2: STYLE 3:<br>CANCELLED PIN 1. ANODE PIN 1. BASE<br>2. N.C. 2. EMITTER<br>3. CATHODE 3. COLLECTOR<br>STYLE 6: STYLE 7: STYLE 8:<br>PIN 1. EMITTER PIN 1. BASE PIN 1. GATE<br> 2. BASE 2. EMITTER 2. SOURCE<br> 3. COLLECTOR 3. COLLECTOR 3. DRAIN<br>**----- End of picture text -----**<br> **==> picture [206 x 63] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 4: STYLE 5:<br>PIN 1. CATHODE PIN 1. ANODE<br>2. CATHODE 2. ANODE<br>3. ANODE 3. CATHODE<br>STYLE 9: STYLE 10: STYLE 11:<br>PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE<br> 2. CATHODE 2. ANODE 2. CATHODE<br> 3. CATHODE-ANODE 3. ANODE-CATHODE 3. CATHODE<br>**----- End of picture text -----**<br> ## **DOCUMENT NUMBER: 98ASB42819B** **DESCRIPTION: SC−70 (SOT−323)** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **PAGE 1 OF 1** **onsemi** and are trademarks of Semiconductor Components Industries, LLC dba **onsemi** or its subsidiaries in the United States and/or other countries. **onsemi** reserves the right to make changes without further notice to any products herein. **onsemi** makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. **onsemi** does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **==> picture [35 x 49] intentionally omitted <==** **----- Start of picture text -----**<br> 3 oe 2<br>1<br>SCALE 4:1<br>**----- End of picture text -----**<br> **SC−75/SOT−416** CASE 463−01 ISSUE G DATE 07 AUG 2015 **==> picture [430 x 472] intentionally omitted <==** **----- Start of picture text -----**<br> −E− NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ANSI<br>T o T Y14.5M, 1982.<br>2. CONTROLLING DIMENSION: MILLIMETER.<br>2<br>MILLIMETERS INCHES<br>3 DIM MIN NOM MAX MIN NOM MAX<br>e −D− A 0.70 0.80 0.90 0.027 0.031 0.035<br>1 A1 0.00 0.05 0.10 0.000 0.002 0.004<br>b 3 PL b 0.15 0.20 0.30 0.006 0.008 0.012<br>0.20 (0.008) a M D HE 0.20 (0.008) E CDE 0.101.550.70 0.151.600.80 0.251.650.90 0.0040.0610.027 0.0060.0630.031 0.0100.0650.035<br>e 1.00 BSC 0.04 BSC<br>L 0.10 0.15 0.20 0.004 0.006 0.008<br>q a—D = B HE 1.50 1.60 BE 1.70 0.060 0.063 0.067<br>C<br>A GENERIC<br>MARKING DIAGRAM*<br>L A1<br>XX M<br>STYLE 1: STYLE 2: STYLE 3:<br>PIN 1. BASE PIN 1. ANODE PIN 1. ANODE<br> 2. EMITTER Jo 2. N/C 2. ANODE 1 a<br> 3. COLLECTOR 3. CATHODE 3. CATHODE<br>XX = Specific Device Code<br>STYLE 4: STYLE 5: M = Date Code<br>PIN 1. CATHODE PIN 1. GATE<br> 2. CATHODE 2. SOURCE = Pb−Free Package<br> 3. ANODE 3. DRAIN *This information is generic. Please refer to<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”,<br>may or may not be present.<br>SOLDERING FOOTPRINT*<br>0.356<br>0.014<br>aT<br>1.803 0.787<br>0.071 0.031<br>7 Mm _<br>_ 0.508 a<br>0.020 1.000<br>0.039<br>SCALE 10:1 mm<br>(—) inches<br>*For additional information on our Pb−Free strategy and soldering<br>details, please download the ON Semiconductor Soldering and<br>Mounting Techniques Reference Manual, SOLDERRM/D.<br>**----- End of picture text -----**<br> **PAGE 1 OF 1** ~~—_~~ Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98ASB15184C** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SC−75/SOT−416 PAGE 1 OF 1** ~~[[-_}__—__§_—___—_~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SOT−1123** CASE 524AA ISSUE C ## DATE 29 NOV 2011 **SCALE 8:1** **==> picture [384 x 260] intentionally omitted <==** **----- Start of picture text -----**<br> D −X− NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME<br>OR −Y− Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: MILLIMETERS.<br>1 3 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD<br>E FINISH. MINIMUM LEAD THICKNESS IS THE<br>2 MINIMUM THICKNESS OF BASE MATERIAL.<br>coe 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS, OR GATE BURRS.<br>TOP VIEW<br>MILLIMETERS<br>A DIM MIN MAX<br>A 0.34 0.40<br>b 0.15 0.28<br>b1 0.10 0.20<br>c 0.07 0.17<br>D 0.75 0.85<br>c Ph HE E 0.55 0.65<br>e 0.35 0.40<br>SIDE VIEW HE 0.95 1.05<br>L 0.185 REF<br>foi O L2 0.05 o 0.15<br>3X L2 b GENERIC<br>0.08 X Y<br>y “Efe MARKING DIAGRAM*<br>e<br>X M<br>3X L<br>ee 2X b1<br>BOTTOM VIEW X = Specific Device Code<br>M = Date Code<br>SOLDERING FOOTPRINT* *This information is generic. Please refer<br>**----- End of picture text -----**<br> 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. **==> picture [160 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> 1.20<br>3X 0.34<br>0.26<br>1<br>al:<br>0.38 2X<br>aan 0.20 S PACKAGE s<br>OUTLINE<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> - *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. **==> picture [300 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. BASE PIN 1. ANODE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE<br> 2. EMITTER 2. N/C 2. ANODE 2. CATHODE 2. SOURCE<br> 3. COLLECTOR 3. CATHODE 3. CATHODE 3. ANODE 3. DRAIN<br>**----- End of picture text -----**<br> Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON23134D** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−1123, 3−LEAD, 1.0X0.6X0.37, 0.35P PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** **SOT−723** CASE 631AA−01 ISSUE D DATE 10 AUG 2009 **SCALE 4:1** **==> picture [451 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> −X− NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME<br>D Y14.5M, 1994.<br>b1 A 2. CONTROLLING DIMENSION: MILLIMETERS.<br>3 −Y− 3. MAXIMUM LEAD THICKNESS INCLUDES LEADFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUMFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM<br>THICKNESS OF BASE MATERIAL.<br>E H E 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>FLASH, PROTRUSIONS OR GATE BURRS.<br>1 2<br>Go 2X b tf MILLIMETERS<br>C DIM MIN NOM MAX<br>2X e 0.08 X Y A 0.45 0.50 0.55<br>SIDE VIEW b 0.15 0.21 0.27<br>TOP VIEW b1 0.25 0.31 0.37<br>C 0.07 0.12 0.17<br>3X L D 1.15 1.20 1.25<br>1 E 0.75 0.80 0.85<br>e 0.40 BSC<br>H E 1.15 1.20 1.25<br>L 0.29 REF<br>L2 0.15 0.20 0.25<br>3X L2 |CU E GENERIC<br>BOTTOM VIEW MARKING DIAGRAM*<br>STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5:<br>PIN 1. BASE PIN 1. ANODE PIN 1. ANODE PIN 1. CATHODE PIN 1. GATE XX M<br> 2. EMITTER 2. N/C 2. ANODE 2. CATHODE 2. SOURCE<br> 3. COLLECTOR 3. CATHODE 3. CATHODE 3. ANODE 3. DRAIN<br>=<br>1<br>XX = Specific Device Code<br>RECOMMENDED<br>M = Date Code<br>**----- End of picture text -----**<br> 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 3. MAXIMUM LEAD THICKNESS INCLUDES LEADFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUMFINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. **==> picture [177 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> RECOMMENDED<br>SOLDERING FOOTPRINT*<br>2X<br>0.40<br>2X 0.27<br>“Ar<br>PACKAGE<br>OUTLINE<br>SAE]<br>1.50<br>3X 0.52 aoe 0.36<br>DIMENSIONS: MILLIMETERS<br>**----- End of picture text -----**<br> *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON12989D** Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. **DESCRIPTION: SOT−723 PAGE 1 OF 1** ~~SE~~ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. www.onsemi.com © Semiconductor Components Industries, LLC, 2019 **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **TECHNICAL SUPPORT Email Requests to:** orderlit@onsemi.com **North American Technical Support: Europe, Middle East and Africa Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 00421 33 790 2910 **onsemi Website:** www.onsemi.com Phone: 011 421 33 790 2910 For additional information, please contact your local Sales Representative ◊ **==> picture [232 x 43] intentionally omitted <==**
Updated at April 24, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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