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DST857BDJ-7
Bipolar Transistor Array, Dual PNP, 45 V, 100 mA
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- Manufacturer: DIODES INC.
- Product type: Bipolar Junction Transistor Arrays - BJT
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 6Pins
- Product Range: -
- Qualification: -
- Transistor Mounting: Surface Mount
- Transistor Polarity: Dual PNP
- Power Dissipation NPN: -
- Power Dissipation PNP: 300mW
- Transistor Case Style: SOT-963
- Transition Frequency NPN: -
- Transition Frequency PNP: 340MHz
- Operating Temperature Max: 150°C
- DC Current Gain hFE Min NPN: -
- DC Current Gain hFE Min PNP: 200hFE
- Continuous Collector Current NPN: -
- Continuous Collector Current PNP: 100mA
- Collector Emitter Voltage Max NPN: -
- Collector Emitter Voltage Max PNP: 45V
| Delivery and price | |
|---|---|
| Units per pack | 10000 |
| Price | 0.04 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**DST857BDJ 45V DUAL PNP SMALL SIGNAL TRANSISTOR IN SOT963** ## **Features** - Epitaxial Planar Die Construction - Ideally Suited for Automated Assembly Processes - Complementary NPN Type Available (DST847BDJ) - Ultra Small Package - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. “Green” Device (Note 3)** ## **Mechanical Data** - Case: SOT963 - Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Terminals: Finish – Matte Tin Plated Leads; Solderable per MILSTD-202, Method 208 © **e3** - Weight: 0.0027 grams (Approximate) **==> picture [416 x 124] intentionally omitted <==** **----- Start of picture text -----**<br> SOT963 C1 C2<br>B1 B2<br>;» & s|_[s|_[a<br>' [ ay et<br>E1 E2 FA B1<br>Top View Device Symbol Top View<br>Pin-Out<br>**----- End of picture text -----**<br> ## **Ordering Information** |**Part Number**|**Compliance**|**Marking**|**Reel Size(inches)**|**Tape Width(mm)**|**Quantity per Reel**| |---|---|---|---|---|---| |DST857BDJ-7|Standard|TB|7|8|10,000| Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. ## **Marking Information** **==> picture [196 x 54] intentionally omitted <==** **----- Start of picture text -----**<br> SOT963<br>TB<br>TB = Product Type Marking Code<br>**----- End of picture text -----**<br> 1 of 7 **www.diodes.com** DST857BDJ Document number: DS32037 Rev. 3 - 2 February 2019 © Diodes Incorporated **DST857BDJ** ## **Absolute Maximum Rating** (@TA = +25°C, unless otherwise specified.) |**Absolute Maximum Ratingg **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Collector-Base Voltage|VCBO|-50|V| |Collector-Emitter Voltage|VCEO|-45|V| |Emitter-Base Voltage|VEBO|-6.0|V| |Collector Current - Continuous(Note 5)|IC|-100|mA| ## **Thermal Characteristics** |**Thermal Characteristics**|||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Power Dissipation(Note 5)|PD|300|mW| |Thermal Resistance,Junction to Ambient(Note 5)|RJA|417|°C/W| |Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C| Note: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. **ESD Rating** (Note 6) **Characteristic Symbol Value Unit JEDEC Class** Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A ~~SSS~~ Electrostatic Discharge - Machine Model ESD MM 200 V B Note: 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 7 **www.diodes.com** DST857BDJ Document number: DS32037 Rev. 3 - 2 February 2019 © Diodes Incorporated **DST857BDJ** [| ## **Thermal Characteristics and Derating Information** **==> picture [438 x 433] intentionally omitted <==** **----- Start of picture text -----**<br> 1 SS SSSSS<br>D = 0.7<br>Sm D = 0.5 memseteectae<br>PSPAU D = 0.3 8A ETI aTIM ereNEAemer TINCO OnTTemer<br>0.1 IE TUE cae LIME TIE ELAM<br>Sa D = 0.1 aee eee eee eect eect eee<br>a a 0 a Oo a, OO OO |<br>D = 0.9<br>po ee ee Ee<br>e D = 0.05 A ec RJA(t) = r(t) * RJA<br>nee R R θJA JA= 370 = 370 ℃ 癈 /W /W anit<br>Le AE TINE ITE PETE TT CTH<br>D = 0.02<br>0.01 eeeee D = 0.01 Aa || P(pk) Ty t1 eeHill<br>EF ERE HEE sont<br>SSS D = 0.005 T J - T A = P * Rt2 JA (t)<br>Ra he CeO Duty Cycle, D = t 1 /t 2 HCH<br>D = Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 1 Transient Thermal Response<br>1,000 0.4<br>Oe ee ee ue<br>ETI TMT TTI TT TTT mut<br>CCIE TT TTT Single Pulse mail<br>R JA (t) = r(t) * R JA<br>100 iaCi NTa aac an R T R J θJA - T JA= 370 A = 370 = P * ℃癈 R /W /W JA(t) ililCn 0.3<br>COETUTMICn TNIETA TOT T eeTT T| Duty Cycle, D = t1/t2 CoonTTT)<br>LOUTI ECT TTI TTT TI mul Note 5<br>HEC ATT HAR HHP HTAHHTE HE Note 3<br>10 Aa 0.2<br>Se TT IRSeo)<br>LOCI CMTE TTI NUTT TI TIT TITTTTT)<br>Te<br>1 wi A aS 0.1<br>a Se<br>COATNn<br>COPTIC8 TC TTffSET CTInk nh<br>LATE ITTTTToa<br>0.1 0<br>0.00001 0.001 0.1 10 1,000 0 20 40 60 80 100 120<br>t1, PULSE DURATION TIME (s) TA, AMBIENT TEMPERATURE (A, AMBIENT TEMPERATURE (, AMBIENT TEMPERATURE (C)<br>Fig. 2 Single Pulse Maximum Power Dissipation<br>r(t), TRANSIENT THERMAL RESISTANCE<br>, POWER DISSIPATION (W)<br>D<br>P<br>P(pk), PEAK TRANSIENT POWER (W)<br>**----- End of picture text -----**<br> **==> picture [211 x 211] intentionally omitted <==** **----- Start of picture text -----**<br> 0.4<br>0.3<br>Note 5<br>Note 3<br>0.2<br>0.1<br>0<br>0 20 40 60 80 100 120 140 160<br>TA, AMBIENT TEMPERATURE (A, AMBIENT TEMPERATURE (, AMBIENT TEMPERATURE (C)<br>Fig. 3 Power Dissipation vs. Ambient Temperature<br>, POWER DISSIPATION (W)<br>D<br>P<br>**----- End of picture text -----**<br> 3 of 7 **www.diodes.com** DST857BDJ Document number: DS32037 Rev. 3 - 2 February 2019 © Diodes Incorporated **DST857BDJ** ## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) |**Typical Electrical Characteristicsypical Electrical Characteristicsical Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||| |---|---|---|---|---|---|---| |**Characteristic(Note 7)**|**Symbol**|**Min**|**Typical**|**Max**|**Unit**|**Test Condition**| |Collector-Base Breakdown Voltage<br>~~a~~|V(BR)CBO|-50|-100|-<br>~~QO~~|V<br>~~QO QO~~|IC= -10µA,IB= 0<br>~~QO~~| |Collector-Emitter Breakdown Voltage<br>~~GG~~<br>~~a~~<br>~~a~~|V(BR)CES<br>~~GG~~|-50<br>~~GG~~|-90<br>~~GG~~|-<br>~~GG~~<br>~~QO~~|V<br>~~GG~~<br>~~QO QO~~|IC= -10µA,IB= 0<br>~~GG~~<br>~~QO~~<br>~~OO~~| |Collector-Emitter Breakdown Voltage<br>~~a~~<br>~~a~~|V(BR)CEO<br>~~(GOO~~|-45<br>~~(GOO~~|-65<br>~~(GOO~~|-<br>~~QO~~<br>~~(GOO~~|V<br>~~QO QO~~<br>~~(GOO~~|IC= -1mA,IB= 0<br>~~QO~~<br>~~(GOO~~<br>~~OO~~| |Emitter-Base Breakdown Voltage<br>~~a~~<br>~~Pe~~|V(BR)EBO<br>~~GOO~~<br>|-6<br>~~GOO~~<br>|-8.5<br>~~GOO~~<br>|-<br>~~GOO~~<br>|V<br>~~GOO~~<br>|IE= -1µA,IC= 0<br>~~OO~~<br>~~GOO~~<br>| |Collector Cut-Off Current<br>~~Pe~~|ICBO<br>~~GOO~~<br><br>~~ee~~|-<br>~~GOO~~<br><br>~~es~~|-<br>~~GOO~~<br>|-15<br>~~GOO~~<br>|nA<br>~~GOO~~<br>|VCB= -30V<br>~~GOO~~<br>| |DC Current Gain<br>~~Peee~~|hFE<br>~~GOO~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|-<br>200<br>~~GOO~~<br>~~ee~~<br>~~es~~<br>~~es~~|340<br>330<br>~~GOO~~<br>~~ee~~|-<br>470<br>~~GOO~~<br>~~ee~~|-<br>~~GOO~~<br>~~ee~~|IC= -10µA, VCE= -5V<br>IC= -2.0mA,VCE= -5V<br>~~GOO~~<br>~~ee~~| |Collector-Emitter Saturation Voltage<br>~~ee~~|VCE(SAT)<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~es~~|-<br>-<br> ~~es~~<br>~~ee~~<br>~~es~~<br>~~es~~|-70<br>-300<br>~~ee~~|-175<br>-500<br>~~ee~~|mV<br>~~ee~~|IC= -10mA, IB= -0.5mA<br>IC= -100mA,IB= -5.0mA<br>~~ee~~| |Base-Emitter Saturation Voltage<br>~~ee~~|VBE(SAT)<br>~~ee ~~<br>~~ee~~<br>~~es~~<br>~~ee~~|-<br>-<br> ~~es~~<br>~~ee~~<br>~~es~~<br>~~es~~|-760<br>-885<br>~~ee~~<br>~~ee~~|-1000<br>-1100<br>~~ee~~<br>~~ee~~|mV<br>~~ee~~<br>~~ee~~|IC= -10mA, IB= -0.5mA<br>IC= -100mA,IB= -5.0mA<br>~~ee~~| |Base-EmitterTurn-OnVoltage<br>~~ee~~|VBE(ON)<br>~~es ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|-600<br> ~~es~~<br>~~ee~~<br>~~es~~|-670<br>-715<br>~~ee~~<br>~~ee~~|-780<br>-850<br>~~ee~~<br>~~ee~~|mV<br>~~ee~~<br>~~ee~~|IC= -2.0mA, VCE= -5V<br>IC= -10mA,VCE= -5V<br>~~ee~~| |Current Gain-Bandwidth Product<br>~~es~~|fT<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~GD~~|100<br> ~~es ~~<br>~~es~~<br>~~GD~~|340<br> ~~ee~~<br>~~es~~<br>~~GD~~|-<br>~~ee~~<br>~~es~~<br>~~QO~~|MHz<br>~~ee~~<br>~~es~~<br>~~COG~~|VCE= -5V, IC = -10mA,<br>f = 100MHz<br>~~es~~<br>~~COG~~| |Output Capacitance<br>~~ee~~|Cobo<br>~~ee~~<br>~~ee~~<br>~~GD~~|-<br>~~ee~~<br>~~GD~~|2.0<br>~~ee~~<br>~~GD~~|-<br>~~ee~~<br>~~QO~~|pF<br>~~ee~~<br>~~COG~~|VCB= -10V,f = 1.0MHz<br>~~ee~~<br>~~COG~~| **==> picture [213 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 0.18<br>IB = -2mA<br>0.16 I B = -1.8mA<br>TT IB = -1.6mA<br>0.14 I B = -1.4mA<br>0.12 IB = -1.2mA<br>IB = -1mA<br>0.10 IB = -0.8mA<br>0.08 IB = -0.6mA<br>0.06 IB = -0.4mA<br>0.04 I B = -0.2mA<br>0.02 Ai<br>0 Lo<br>0 1 2 3 4 5<br>-VCE, COLLECTOR-EMITTER VOLTAGE (V)<br>Fig. 4 Typical Collector Current<br>vs. Collector-Emitter Voltage<br>, COLLECTOR CURRENT (A)<br>C<br>-I<br>**----- End of picture text -----**<br> **==> picture [219 x 210] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>550 T = 150°CA VV = 5VCECE = -5V<br>Haat a<br>500<br>T = 125°CA<br>450<br>I [N]<br>G [A] 400 T = 85°CA<br>N [T]<br>350<br>300 T = 25°CA<br>C [URRE]<br>250<br>D [C]<br>, F [E] 200<br>- [h] 150 T = -55°CA<br>100<br>PEE EP<br>50<br>0 H E<br>0 1 10 100 1,000<br>-I , COLLECTOR CURRENT (mA)C<br>Fig. 5 Typical DC Current Gain vs. Collector Current<br>, DC CURRENT GAIN<br>FE<br>-h<br>**----- End of picture text -----**<br> 4 of 7 **www.diodes.com** DST857BDJ Document number: DS32037 Rev. 3 - 2 February 2019 © Diodes Incorporated **DST857BDJ** **==> picture [225 x 442] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>IC/IB=10<br>er eee |<br>[TTER] MI ( [V)] A<br>G [E] UT<br>- [E]<br>T [A] Yy<br>T [OR] O [L] V ERIE T = 150°CA ? AO<br>[C] E 0.1<br>L T = 125°CA<br>O [L] T [ION] ESE ari te<br>C AR T = 85°CA<br>, AT [)] T [U] eSS e E e T = 25°CA Coo<br>( [S] C [E] AS S S T = -55°CA Bani<br>- [V] aa<br>0.01 a ii<br>0.1 1 10 100 1,000<br>-I , COLLECTOR CURRENT (mA)C<br>Fig. 6 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>) 1.0 WA<br>( [V]<br>G [E] V = -5VCE<br>T [A]<br>O [L]<br>V 0.8 o T = -55°CA e<br>- [ON] N TT 7anil,4A<br>R<br>T [U] T = 25°CA<br>R 0.6<br>eT All<br>I [TTE] M T r ea T = 150°CA<br>- [E] E T = 125°CA<br>S 0.4<br>AB w s T = 85°CA All<br>Ssetl<br>,<br>[E(ON)] B<br>- [V] 0.2 MT<br>0.1 1 10 100 1,000<br>-I , COLLECTOR CURRENT (mA)C<br>Fig. 8 Typical Base-Emitter Turn-On Voltage<br>vs. Collector Current<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>CE(SAT) SATURATION<br>-V<br> VOLTAGE (V)<br>TURN-ON<br>, BASE-EMITTER<br>BE(ON)<br>-V<br>**----- End of picture text -----**<br> **==> picture [224 x 445] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>ICI/I = 20/ICBB=20<br>R ae<br>I [TTE] M [V)] ( | |<br>G [E] a |<br>A<br>T<br>O [L] ET RR<br>C [TOR-E] V T = 150°CA<br>O [N] 0.1 T = 125°CA<br>IT Sme e<br>C [OLLE] AR T = 85°CA<br>, T [)] A UTA S S 227, T = 25°CA Gant eeetl<br>( [S] EC S T E T = -55°CA<br>- [V] — —— mma<br>0.01<br>0.1 1 10 100 1,000<br>-I , COLLECTOR CURRENT (mA)C<br>Fig. 7 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>) [V] ( 1.2 Gain = 10<br>G [E]<br>O [LTA] 1.0<br>T TC<br>VT [ION] geezMe<br>0.8<br>T = -55°CA<br>T [URA]<br>A<br>S i H<br>R 0.6 T = 25°CA eral<br>I [TTE] M T = 150°CA<br>- [E] E 0.4 KK T = 125°CA<br>SAB ew T = 85°CA<br>, T [)] A<br>S 0.2 a i Wi<br>(EB 0.1 1 10 100 1,000<br>- [V] -I , COLLECTOR CURRENT (mA)C<br>Fig. 9 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>CE(SAT) SATURATION<br>-V<br>VOLTAGE (V)<br>, BASE-EMITTER SATURATION<br>BE(SAT)<br>-V<br>**----- End of picture text -----**<br> 5 of 7 **www.diodes.com** DST857BDJ Document number: DS32037 Rev. 3 - 2 February 2019 © Diodes Incorporated **DST857BDJ** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. **==> picture [381 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> SOT963<br>D<br>L1<br>e1<br>SOT963<br>Dim Min Max Typ<br>E1 E A 0.40 0.50 0.45<br>A1 0.00 0.05 --<br>b 0.10 0.20 0.15<br>c 0.120 0.180 0.150<br>D 0.95 1.05 1.00<br>b e ea OL c E 0.95 1.05 1.00<br>b E1 0.75 0.85 0.80<br>e -- -- 0.35<br>e1 -- -- 0.70<br>==== L1 0.05 0.15 0.10<br>All Dimensions in mm<br>A1<br>A<br>Seating plane<br>**----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. **SOT963** **==> picture [127 x 141] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>Y1<br>p ad<br>Y<br>X<br>**----- End of picture text -----**<br> **==> picture [95 x 95] intentionally omitted <==** **----- Start of picture text -----**<br> Value<br>Dimensions<br>(in mm)<br>C 0.350<br>X 0.200<br>Y 0.200<br>Y1 1.100<br>_<br>**----- End of picture text -----**<br> 6 of 7 **www.diodes.com** DST857BDJ Document number: DS32037 Rev. 3 - 2 February 2019 © Diodes Incorporated **DST857BDJ** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2019, Diodes Incorporated **www.diodes.com** 7 of 7 **www.diodes.com** DST857BDJ Document number: DS32037 Rev. 3 - 2 February 2019 © Diodes Incorporated
Updated at March 26, 2026
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