DST847BPDP6-7

Bipolar Transistor Array, Complementary NPN and PNP, 45 V, 45 V, 100 mA, 100 mA, 300 mW

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Manufacturer: DIODES INC.
Product type: Bipolar Junction Transistor Arrays - BJT
SVHC: No SVHC (25-Jun-2025)
No. of Pins: 6Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Complementary NPN and PNP
Power Dissipation NPN: 300mW
Power Dissipation PNP: 300mW
Transistor Case Style: SOT-963
Transition Frequency NPN: 175MHz
Transition Frequency PNP: 340MHz
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 200hFE
DC Current Gain hFE Min PNP: 200hFE
Continuous Collector Current NPN: 100mA
Continuous Collector Current PNP: 100mA
Collector Emitter Voltage Max NPN: 45V
Collector Emitter Voltage Max PNP: 45V
Delivery and price
Units per pack	5000
Price	0.067 €
Current stock	10+
Lead time	30 days
Datasheet
**DST847BPDP6** 

**45V COMPLEMENTARY SMALL SIGNAL TRANSISTOR IN SOT963** 

## **Features** 

## **Mechanical Data** 

- NPN & PNP Complementary SS 

- BVCEO  > 45V 

- IC = 100mA High Collector Current 

- PD = 300mW Power Dissipation 

- 1mm[2] Package Footprint, 5 times smaller than SOT23 

- 0.5mm Height Package Minimizing Off-Board Profile 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

   - Case: SOT-963 

   - Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity:  Level 1 per J-STD-020 

   - Terminals: Finish  Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 

   - Weight: 0.0027 grams (Approximate) 

- **Qualified to AEC-Q101 Standards for High Reliability** 

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SOT-963<br>6 5 4<br>Q1 Q2<br>1 2 3<br>Top View  Device Schematic<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Device**|**Compliance**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|---|
|DST847BPDP6-7|AEC-Q101|TC|7|8|10,000|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

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SOT-963<br>TC<br>TC = Product Type Marking Code<br>**----- End of picture text -----**<br>


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DST847BPDP6 Document number: DS32036 Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**DST847BPDP6** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|50(-50)|V|
|Collector-Emitter Voltage|VCEO|45(-45)|V|
|Emitter-Base Voltage|VEBO|6.0(-5.0)|V|
|Collector Current|IC|100(-100)|mA|



**Thermal Characteristics Characteristic Symbol Value Unit** Power Dissipation (Note 5) PD 300 mW Thermal Resistance, Junction to Ambient (Note 5) RJA 417 °C/W ~~===>~~ Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C **ESD Ratings** (Note 6) **Characteristic Symbol Value Unit JEDEC Class** Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 200 V B ~~SO~~ Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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DST847BPDP6 Document number: DS32036 Rev. 2 - 2 

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**DST847BPDP6** 

## **Thermal Characteristics and Derating Information** 

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**----- Start of picture text -----**<br>
1 SSS SSS SS SSS SSS SSS oe<br>Ee D = 0.7<br>D = 0.5<br>Ea a<br>D = 0.3 ET<br>FH THI ULL eA ETE<br>0.1 CT eeAL<br>ES D = 0.1 LUI IE IML ATTTTThl<br>Speers ieee nen espeeZae \Pers D = 0.9 ee ee Fe S| | RR adT EEL Et<br>D = 0.05<br>pOe1 ZPa A ro R RJA JA(t) = r(t) *   = 370°C/W R JA CoCT<br>D = 0.02<br>0.01 PTT EINE LEI ETT ETT P(pk) Hil<br>pearPr D = 0.01 ee ATA {>| t1 t2 CTTCTT<br>Fy D = 0.005 ITIL T J  - T A  = P * R JA (t) al<br>a Duty Cycle, D = t1/t2 THT<br>D = Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 1 Transient Thermal Response<br>1,000 0.4<br>100 Single Pulse<br>RJA(t) = r(t) * RJA 0.3<br>RJA = 370°C/W Note 3<br>TJ - TA = P * RJA(t)<br>10 IN Duty Cycle, D = t 1 /t 2<br>0.2<br>1<br>0.1<br>0.1<br>0.01 0<br>0.00001 0.001 0.1 10 1,000 0 20 40 60 80 100 120 140 160<br>t1, PULSE DURATION TIME (s) TA, AMBIENT TEMPERATURE (C)<br>Fig. 2 Single Pulse Maximum Power Dissipation Fig. 3 Power Dissipation vs. Ambient Temperature<br>, POWER DISSIPATION (W)<br>D<br>P<br>r(t), TRANSIENT THERMAL RESISTANCE<br>P(pk), PEAK TRANSIENT  POWER (W)<br>**----- End of picture text -----**<br>


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DST847BPDP6 Document number: DS32036 Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**DST847BPDP6** 

|**Characteristic(Note 7)**<br>~~OO~~|**Symbol**<br>~~OO~~|**Min**<br>~~OO~~|**Typical**<br>~~OO~~|**Max**<br>~~OO~~<br>~~———~~|**Unit**<br>~~OO~~<br>~~———~~|**Test Condition**<br>~~OO~~|
|---|---|---|---|---|---|---|
|Collector-Base Breakdown Voltage<br>~~OO~~|BVCBO<br>~~OO~~|50<br>~~OO~~|150<br>~~OO~~|-<br>~~OO~~<br>~~———~~|V<br>~~OO~~<br>~~———~~|IC= 10µA,IB= 0<br>~~OO~~<br>~~ee~~|
|Collector-Emitter Breakdown Voltage<br>~~ee~~|BVCES<br>~~ee~~|50<br>~~ee~~|150<br>~~ee~~|-<br>~~———~~<br>~~ee~~|V<br>~~———~~<br>~~ee~~|IC= 10µA,IB= 0<br>~~ee~~<br>~~ee~~|
|Collector-Emitter Breakdown Voltage<br>~~ee~~|BVCEO<br>~~ee~~|45<br>~~ee~~|65<br>~~ee~~|-<br>~~ee~~|V<br>~~ee~~|IC= 1mA,IB= 0<br>~~ee~~<br>~~ee~~|
|Emitter-Base Breakdown Voltage|BVEBO|6|8.35|-|V|IE= 1µA,IC= 0<br>~~ee~~|
|Collector-Base Cut-Off Current|ICBO|-|-|15|nA|VCB = 30V|
|DC Current Gain<br>~~OO~~|hFE<br>~~OO~~|-<br>200<br>~~OO~~|220<br>300<br>~~OO~~|-<br>470<br>~~OO~~|-<br>~~OO~~|IC=  10µA, VCE=  5V<br>IC=  2.0mA,VCE=  5V<br>~~OO~~|
|Collector-Emitter Saturation Voltage<br>~~OOO~~|VCE(sat)<br>~~OOO~~|-<br>-<br>~~OOO~~|50<br>122<br>~~OOO~~|125<br>300<br>~~OOO~~|mV<br>~~OOO~~|IC= 10mA, IB= 0.5mA<br>IC= 100mA,IB= 5.0mA<br>~~OOO~~|
|Base-Emitter Saturation Voltage<br>~~OOO~~|VBE(sat)<br>~~OOO~~|-<br>-<br>~~OOO~~|760<br>880<br>~~OOO~~|1,000<br>1,100<br>~~OOO~~|mV<br>~~OOO~~|IC= 10mA, IB= 0.5mA<br>IC= 100mA,IB= 5.0mA<br>~~OOO~~|
|Base-Emitter Voltage<br>~~OOO~~<br>~~Cr~~|VBE(on)<br>~~OOO~~<br>~~ee~~|580<br>~~OOO~~<br>~~ee~~|650<br>725<br>~~OOO~~<br>~~ee~~|750<br>800<br>~~OOO~~<br>~~ee~~|mV<br>~~OOO~~<br>~~ee~~|IC=  2.0mA, VCE=  5V<br>IC=  10mA,VCE=  5V<br>~~OOO~~|
|Current Gain-Bandwidth Product<br>~~ee~~<br>~~Cr~~<br>~~eeeeee~~|fT<br>~~ee~~<br>~~ee~~<br>~~eee~~<br>~~err~~|100<br>~~ee~~<br>~~ee~~<br>~~errlr~~|175<br>~~ee~~<br>~~ee~~<br>~~lr~~<br>~~tel~~|-<br>~~ee~~<br>~~ee~~<br>~~tel~~|MHz<br>~~ee~~<br>~~ee~~<br>~~dE~~|VCE= 5V, IC = 10mA,<br>f = 100MHz<br>~~ee~~<br>~~dE~~|
|Collector-Base Capacitance<br>~~Cr~~<br>~~eeeeee~~|Ccbo<br>~~ee~~<br>~~eee~~<br>~~err~~|-<br>~~ee~~<br>~~errlr~~|1.5<br>~~ee~~<br>~~lr~~<br>~~tel~~|-<br>~~ee~~<br>~~tel~~|pF<br>~~ee~~<br>~~dE~~|VCB= 10V,f = 1.0MHz<br>~~dE~~|



Note: 7. Measured under pulsed conditions. Pulse width  300µs.  Duty cycle  2%. 

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DST847BPDP6 Document number: DS32036 Rev. 2 - 2 

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**DST847BPDP6** 

## **Typical Characteristics – Q1 NPN Transistor** (@TA = +25°C, unless otherwise specified.) 

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0.16 IB = 1.8mA IB = 2mA 450 a V CE  = 5V<br>0.14 IB = 1.4mA IB = 1.6mA = 400 HHH SHE OHH<br>IB = 1.2mA 350 TA = 150°C<br>0.12 eo COEIS<br>TA = 100°C<br>SE IB = 1mA 300 Perr INT<br>0.10 255555 I 2 B = 0.8mA 2 250 as a TFOIE| Tn NTE I<br>0.08 [ IB = 0.6mA PPA TA = 25°C<br>IB = 0.4mA 200<br>0.06 a=— 150 Foieeoi<br>T A  = -55°C<br>0.04 [—__ {> I B  = 0.2mA 100 coCNee ee<br>Co oT<br>0.02 WM , 50 aECCIFATE FP<br>EE<br>0 Po 0 aCe oT<br>0 1 2 3 4 5 1 10 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)<br>Fig. 4 Typical Collector Current  Fig. 5 Typical DC Current Gain vs. Collector Current<br>vs. Collector-Emitter Voltage<br>0.20<br>0.18 ae IC/IB = 10 en 1 [WLU!] I ™ C/IB = 20<br>0.16 Ht St tH See eee eee te<br>0.14<br>a 0<br>0.12 HH A<br>ee) OE Sif<br>0.10 TA = 10°C<br>CO ee 0.1 TL<br>0.08 a T A  = 150°C stieeeenasiimell<br>Pct 1 ea ee TA = 20°C eal) Ze<br>0.06 SO eee TA = 100°C 272i ae TA = 50°C ee atteeee<br>0.04<br>TA = 25 ° C TA = 100°C<br>0.02 a TA = -55°C i oe<br>Fett<br>0 HEHEeeeEHH 0.01 TE CUE LTE<br>1 10 100 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 6 Typical Collector-Emitter Saturation Voltage Fig. 7 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>1.0 1.1<br>V - CE = 5V 1.0 AE ET<br>0.8 0.9 ie<br>TBE TA = -55°C |<br>ual LEE Tt<br>0.8 T A  = -55°C<br>0.6 l T A  = 25°C z 0.7 wn<br>TA = 25°C<br>0.6<br>TA = 100°C<br>0.4 |e r T Lea 0.5 eo(eRe<br>Leect ee TA = 100°C ee<br>TA = 150°C<br>0.4 ra T A  = 150°C | |<br>0.2 0.3<br>0.1 1 10 100 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 8 Typical Base-Emitter Turn-On Voltage  Fig. 9 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>SATURATION<br>V<br>CE(SAT)<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>BE(ON)<br>V<br>, DC CURRENT GAIN<br>h<br>FE<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>SATURATION<br>CE(SAT)<br>V<br>, BASE-EMITTER SATURATION VOLTAGE (V)<br>V<br>BE(SAT)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


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DST847BPDP6 Document number: DS32036 Rev. 2 - 2 

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**www.diodes.com** 

**DST847BPDP6** 

**Electrical Characteristics – Q2 PNP Transistor** (@TA = +25°C, unless otherwise specified.) 

|**Characteristic(Note 7)**<br>~~————~~|**Symbol**<br>~~————~~|**Min**<br>~~————~~|**Typical**<br>~~————~~|**Max**<br>~~————~~|**Unit**<br>~~————~~|**Test Condition**<br>~~————~~|
|---|---|---|---|---|---|---|
|Collector-Base Breakdown Voltage<br>~~————~~<br>~~SEE~~|BVCBO<br>~~————~~<br>~~ee~~|-50<br>~~————~~<br>~~ee~~|-100<br>~~————~~<br>~~ee~~|-<br>~~————~~|V<br>~~————~~|IC= -10µA,IB= 0<br>~~————~~|
|Collector-Emitter Breakdown Voltage<br>~~ee~~<br>~~SEE~~|BVCES<br>~~ee~~<br>~~ee~~|-50<br>~~ee~~<br>~~ee~~|-90<br>~~ee~~<br>~~ee~~|-<br>~~ee~~|V<br>~~ee~~|IC= -10µA,IB= 0<br>~~ee~~|
|Collector-Emitter Breakdown Voltage<br>~~ee~~<br>~~SEE~~<br>~~PaEEEEEEEEEEREEEEEE~~|BVCEO<br>~~ee~~<br>~~ee~~<br>~~PaEEEEEEEEEEREEEEEE~~|-45<br>~~ee~~<br>~~ee~~<br>~~PaEEEEEEEEEEREEEEEE~~|-65<br>~~ee~~<br>~~ee~~<br>~~PaEEEEEEEEEEREEEEEE~~|-<br>~~ee~~<br>~~PaEEEEEEEEEEREEEEEE~~|V<br>~~ee~~<br>~~PaEEEEEEEEEEREEEEEE~~|IC= -1mA,IB= 0<br>~~ee~~<br>~~PaEEEEEEEEEEREEEEEE~~|
|Emitter-Base Breakdown Voltage<br>~~SEE~~<br>~~PaEEEEEEEEEEREEEEEE~~|BVEBO<br>~~ee~~<br>~~PaEEEEEEEEEEREEEEEE~~|-6<br>~~ee~~<br>~~PaEEEEEEEEEEREEEEEE~~|-8.5<br>~~ee~~<br>~~PaEEEEEEEEEEREEEEEE~~|-<br>~~PaEEEEEEEEEEREEEEEE~~|V<br>~~PaEEEEEEEEEEREEEEEE~~|IE= -1µA,IC= 0<br>~~PaEEEEEEEEEEREEEEEE~~|
|Collector Cut-Off Current<br>~~SEE~~<br>~~PaEEEEEEEEEEREEEEEE~~|ICBO<br>~~ee~~<br>~~PaEEEEEEEEEEREEEEEE~~|-<br>~~ee~~<br>~~PaEEEEEEEEEEREEEEEE~~|-<br>~~ee~~<br>~~PaEEEEEEEEEEREEEEEE~~|-15<br>~~PaEEEEEEEEEEREEEEEE~~|nA<br>~~PaEEEEEEEEEEREEEEEE~~|VCB = -30V<br>~~PaEEEEEEEEEEREEEEEE~~|
|DC Current Gain<br>~~SEE~~<br>~~PaEEEEEEEEEEREEEEEE~~<br>~~a~~|hFE<br>~~ee ~~<br>~~PaEEEEEEEEEEREEEEEE~~<br>~~a~~|-<br>200<br> ~~ee ~~<br>~~PaEEEEEEEEEEREEEEEE~~<br>~~a~~|340<br>330<br> ~~ee~~<br>~~PaEEEEEEEEEEREEEEEE~~<br>~~a~~|-<br>470<br>~~PaEEEEEEEEEEREEEEEE~~<br>~~a~~|-<br>~~PaEEEEEEEEEEREEEEEE~~<br>~~a~~|IC=  -10µA, VCE= -5V<br>IC=  -2.0mA,VCE= -5V<br>~~PaEEEEEEEEEEREEEEEE~~<br>~~a~~|
|Collector-Emitter Saturation Voltage<br>~~GG~~|VCE(sat)<br>~~GG~~|-<br>-<br>~~GG~~|-70<br>-300<br>~~GG~~|-175<br>-500<br>~~GG~~|mV<br>~~GG~~|IC= -10mA, IB= -0.5mA<br>IC= -100mA,IB= -5.0mA<br>~~GG~~|
|Base-Emitter Saturation Voltage<br>~~Oa~~|VBE(sat)<br>~~Oa~~|-<br>-<br>~~Oa~~|-760<br>-885<br>~~Oa~~|-1,000<br>-1,100<br>~~Oa~~|mV<br>~~Oa~~|IC= -10mA, IB= -0.5mA<br>IC= -100mA,IB= -5.0mA<br>~~Oa~~|
|Base-Emitter Voltage<br>~~OG~~|VBE(on)<br>~~OG~~<br>~~es~~|-600<br>-<br>~~OG~~<br>~~es~~|-670<br>-715<br>~~OG~~|-780<br>-850<br>~~OG~~|mV<br>~~OG~~|IC=  -2.0mA, VCE=  -5V<br>IC=  -10mA,VCE=  -5V<br>~~OG~~|
|Current Gain-Bandwidth Product<br>~~es~~|fT<br>~~es~~<br>~~es~~<br>~~eer~~|100<br>~~es~~<br>~~es~~<br>~~eerll~~|340<br>~~es~~<br>~~ll~~<br>~~el~~|-<br>~~es~~<br>~~el~~<br>~~ld~~|MHz<br>~~es~~<br>~~ld~~<br>~~ld~~|VCE= -5V, IC = -10mA,<br>f = 100MHz<br>~~es~~<br>~~ld~~|
|Output Capacitance<br>~~rrr~~|Cobo<br>~~es ~~<br>~~rrr~~<br>~~eer~~|-<br> ~~es~~<br>~~rrr~~<br>~~eerll~~|2.0<br>~~rrr~~<br>~~ll~~<br>~~el~~|-<br>~~rrr~~<br>~~el~~<br>~~ld~~|pF<br>~~rrr~~<br>~~ld~~<br>~~ld~~|VCB= -10V,f = 1.0MHz<br>~~rrr~~<br>~~ld~~|



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**DST847BPDP6** 

## **Typical Characteristics – Q2 PNP Transistor** (@TA = +25°C, unless otherwise specified.) 

**==> picture [489 x 663] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.18 1,000 a OOOO OOO<br>0.16 IB = -1.8mA IB = -2mA T A  = 150°C T A  = 125°C VCE = 5V<br>IB = -1.6mA<br>0.14 I B  = -1.4mA T A  = 85°C<br>T A  = 25°C<br>0.12 IB = -1.2mA L—___ ST<br>Lz=—_—_— IB = -1mA IT TTR TTT<br>0.10 ff I B  = -0.8mA aT TA = -55°C \<br>IB = -0.6mA 100<br>jes ITN<br>0.08<br>IB = -0.4mA Soot Seatiereete<br>0.06 MoO——&#.-o2. TTT<br>YA went<br>ST<br>0.04 I B  = -0.2mA<br>0.02 ————_ |<br>0 10<br>0 1 2 3 4 5 0.1 1 10 100 1,000<br>-VCE, COLLECTOR-EMITTER VOLTAGE (V) -IC, COLLECTOR CURRENT (A)<br>Fig. 10 Typical Collector Current  Fig. 11 Typical DC Current Gain vs. Collector Current<br>vs. Collector-Emitter Voltage<br>1 1<br>Se Se er een See<br>IC/IB = 10 I C /I B = 20<br>a_ ieee AMR SOaeeemcertiteeeettte|) emmett<br>EAE EI ee)<br>PA<br>a an A A PIE<br>TA = 150°C<br>0.1 aSati T A  = 150°C 0.1 All| TA = 125 TEI °C TAyl TA = 85° TTT C<br>an T A  = 125°C BOTSDy r TA = 85°C ti ritt asi=a:ean T A  = 25°C FH<br>=FSei pee T A = 25°C Tt eSsasCen T Am A = -55°C 1<br>=a T A  = -55°C tt Te cH<br>aera ccc ttCr<br>0.01 aii 0.01 eV<br>0.1 1 10 100 1,000 0.1 1 10 100 1,000<br>-IC, COLLECTOR CURRENT (mA) -IC, COLLECTOR CURRENT (mA)<br>Fig. 12 Typical Collector-Emitter Saturation Voltage Fig. 13 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>1.2 1.2<br>VCE = -5V IC/IB = 10<br>1.0 RAR THE Te<br>0.8 aAT TTealPT 1.0 WEA2<br>CIM TA = -55°C ear 0.8 FEL alllielll|<br>NZI ee TA = -55°C tll al<br>0.6 TA = 25°C<br>OM Tl lH<br>0.4 maesat Ter T A = 85°C TTT 0.6 T A  = 25°C mT TA = 85°C<br>ass<br>T A  = 150°C TA = 125°C TA = 125°C<br>0.4<br>0.2 =ea cr Imani oeTer TA = 150°C<br>Co a een<br>0 0.2<br>0.1 ELALINE 1 | LATIMEnon 10 TUTTE 100 LTT 1,000 0.1 TM 1 10 A 100 1,000<br>-IC, COLLECTOR CURRENT (mA) -IC, COLLECTOR CURRENT (mA)<br>Fig. 14 Typical Base-Emitter Turn-On Voltage  Fig. 15 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>, DC CURRENT GAIN<br>FE<br>h<br>, BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(SAT)<br>-V<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>-V<br>BE(ON)<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>CE(SAT) SATURATION<br>-V<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>SATURATION<br>-V<br>CE(SAT)<br>, COLLECTOR CURRENT (A)<br>-I<br>C<br>**----- End of picture text -----**<br>


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DST847BPDP6 Document number: DS32036 Rev. 2 - 2 

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**DST847BPDP6** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

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**----- Start of picture text -----**<br>
D<br>e1<br>SOT-963<br>L<br>Dim  Min  Max  Typ<br>A  0.40 0.50 0.45<br>A1  0 0.05 -<br>E1 E<br>C 0.120 0.180 0.150<br>D  0.95 1.05 1.00<br>E  0.95 1.05 1.00<br>E1  0.75 0.85 0.80<br>= e b (6 places) : c L  0.05 0.15 0.10<br>b  0.10 0.20 0.15<br>e 0.35 Typ<br>e1  0.70 Typ<br>A All Dimensions in mm<br>A1<br>Exal<br>**----- End of picture text -----**<br>


## **Suggest Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

**==> picture [84 x 111] intentionally omitted <==**

**----- Start of picture text -----**<br>
C C<br>Y1<br>Y (6X)<br>fg<br>X (6X)<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|0.350|
|**X**|0.200|
|**Y**|0.200|
|**Y1**|1.100|



8 of 9 **www.diodes.com** 

DST847BPDP6 Document number: DS32036 Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**DST847BPDP6** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

A.   Life support devices or systems are devices or systems which: 

1. are intended to implant into the body, or 

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

9 of 9 **www.diodes.com** 

DST847BPDP6 Document number: DS32036 Rev. 2 - 2 

March 2015 © Diodes Incorporated
Updated at March 26, 2026
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