DST847BDJ-7

**DST847BDJ** eo. TT **45V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT-963** 

## **Features** 

## **Mechanical Data** 

- Dual NPN SS 

- BVCEO  > 45V 

- IC = 100mA High Collector Current 

- PD = 300mW Power Dissipation 

- 1mm[2] Package Footprint, 5 Times Smaller than SOT23 

- 0.5mm Height Package Minimizing Off-Board Profile 

- Complementary PNP Type Available (DST857BDJ) 

   - Case: SOT-963 

   - Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 

   - Moisture Sensitivity:  Level 1 per J-STD-020 

   - Terminals: Finish – Matte Tin Plated Leads; Solderable per MILSTD-202, Method 208 

   - Weight: 0.0027 grams (Approximate) 

- **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** 

- **Halogen and Antimony Free. “Green” Device (Note 3)** 

- **Qualified to AEC-Q101 Standards for High Reliability** 

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SOT-963<br>~<br>Top View<br>**----- End of picture text -----**<br>


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Device Symbol  Top View<br>Pin-Out<br>**----- End of picture text -----**<br>


## **Ordering Information** (Note 4) 

|**Device**|**Compliance**|**Marking**|**Reel size(inches)**|**Tape width(mm)**|**Quantity per reel**|
|---|---|---|---|---|---|
|DST847BDJ-7|AEC-Q101|TA|7|8|10,000|



Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 

3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 

## **Marking Information** 

SOT-963 

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TA TA = Product Type Marking Code<br>**----- End of picture text -----**<br>


1 of 7 **www.diodes.com** 

DST847BDJ Document number: DS32035  Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**DST847BDJ** 

## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) 

|**Absolute Maximum Ratingsgss **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Collector-Base Voltage|VCBO|50|V|
|Collector-Emitter Voltage|VCEO|45|V|
|Emitter-Base Voltage|VEBO|6.0|V|
|Collector Current|IC|100|mA|



## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Thermal Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|||
|---|---|---|---|
|**Characteristic**|**Symbol**|**Value**|**Unit**|
|Power Dissipation(Note 5)|PD|300|mW|
|Thermal Resistance,Junction to Ambient(Note 5)|RJA|417|°C/W|
|Operatingand Storage Temperature Range|TJ,TSTG|-55 to +150|°C|



## **ESD rating** (Note 6) 

|**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**|
|---|---|---|---|---|
|Electrostatic Discharge - Human Body Model|ESD HBM|4,000|V|3A|
|ElectrostaticDischarge- MachineModel|ESD MM|200|V|B|



Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. 

6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 

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DST847BDJ Document number: DS32035  Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**DST847BDJ** 

## **Thermal Characteristics and Derating Information** 

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**----- Start of picture text -----**<br>
1<br>FEE D = 0.7 a ertEE<br>D = 0.5<br>TTT em Cr<br>D = 0.3 A PE<br>CLT RMMAAMSeeee MOURIMTIORATUIIGMUUINIORTTUIORWOTIIIORRUUII<br>0.1 ST I eAAN LUTTEIMT LI EU UTILI I MLM UTI<br>ERE D = 0.1 HaHH<br>D = 0.9<br>Sametieeee aati ae etani east eect ee easel ea ee<br>pC D = 0.05 ae RJA(t) = r(t) * RJA I<br>ne RJA = 370°C/W mil<br>D = 0.02<br>eA TCM UTP Hl<br>P(pk)<br>0.01 leEe D = 0.01 aL ULE LUI LM TT] t1 7] ltCott<br>SEH t 2<br>D = 0.005 T J  - T A  = P * R JA (t)<br>ReHe EeAR Duty Cycle, D = t1/t2 TTTT<br>D = Single Pulse<br>0.001<br>0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 1 Transient Thermal Response<br>r(t), TRANSIENT THERMAL RESISTANCE<br>**----- End of picture text -----**<br>


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1,000<br>Ete Fru ite eittn<br>LPAI ETI TTT TTT UH<br>Single Pulse<br>100 tha Ln R R JA JA (t) = r(t) *   = 370 ° C/W RJA Hhll<br>SaileasLPAI TEINcoatTTT eatTITTYaa DutTJ -y T CAy=cle, D = t P * RJA 1 (t)/t 2 iiHt<br>B01 0 0 Hh<br>10 0 ASN<br>CO Oc Sn Co TO<br>LPAI TET TTT INNTTITITETPTTTPTIETIPT<br>0 0A<br>1 AA<br>SE TT taeSabet<br>LPAI ETM TTT TIT TTT PT TTS ere<br>0.1 CCA COC<br>0.00001 0.001 0.1 10 1,000<br>t1, PULSE DURATION TIME (s)<br>Fig. 2 Single Pulse Maximum Power Dissipation<br>P(pk), PEAK TRANSIENT  POWER (W)<br>**----- End of picture text -----**<br>


3 of 7 **www.diodes.com** 

DST847BDJ Document number: DS32035  Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**DST847BDJ** 

## **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

|**Electrical Characteristics**(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||
|---|---|---|---|---|---|---|
|**Characteristic(Note 7)**|**Symbol**|**Min**|**Typical**|**Max**|**Unit**|**Test Condition**|
|Collector-Base Breakdown Voltage|BVCBO|50|150||V|IC= 10µA,IB= 0|
|Collector-Emitter Breakdown Voltage|BVCES|50|150||V|IC= 10µA,IB= 0|
|Collector-Emitter Breakdown Voltage|BVCEO|45|65<br>~~—_f~~|<br>~~—_fff}~~|V<br>~~ff}~~|IC= 1mA,IB= 0<br>~~ff}~~|
|Emitter-Base Breakdown Voltage<br>~~f+}~~|BVEBO<br>~~f+}~~|6<br>~~f+}~~|8.35<br>~~f+}~~<br>~~—_f~~|<br>~~f+}~~<br>~~—_fff}~~|V<br>~~f+}~~<br>~~ff}~~|IE= 1µA,IC= 0<br>~~f+}~~<br>~~ff}~~|
|Collector-Base Cut-Off Current<br>~~f+}~~|ICBO<br>~~f+}~~<br>~~ee~~|<br>~~f+}~~<br>~~ee~~|<br>~~f+}~~<br>~~—_f~~<br>~~ee~~|15<br>~~f+}~~<br>~~—_fff}~~<br>~~ee~~|nA<br>~~f+}~~<br>~~ff}~~<br>~~ee~~|VCB = 30V<br>~~f+}~~<br>~~ff}~~|
|DC Current Gain<br>~~ee~~|hFE<br>~~ee~~<br>~~ee~~<br>~~ee~~|<br>200<br>~~ee~~<br>~~ee~~<br>~~ee~~|220<br>300<br>~~—_f~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|<br>470<br>~~—_f ff}~~<br>~~ee~~<br>~~ee~~|<br>~~ff}~~<br>~~ee~~<br>~~ee~~|IC= 10µA, VCE= 5V<br>IC= 2.0mA,VCE= 5V<br>~~ff}~~<br>~~ee~~|
|Collector-Emitter Saturation Voltage<br>~~ee~~|VCE(sat)<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|<br><br> ~~ee~~<br>~~ee~~<br>~~ee~~<br>~~es~~|50<br>122<br>~~ee ~~<br>~~ee~~<br>~~ee~~|125<br>300<br> ~~ee~~<br>~~ee~~|mV<br>~~ee~~<br>~~ee~~|IC= 10mA, IB= 0.5mA<br>IC= 100mA,IB= 5.0mA<br>~~ee~~|
|Base-Emitter Saturation Voltage<br>~~es~~|VBE(sat)<br>~~ee ~~<br>~~es~~<br>~~ee~~<br>~~ee~~|<br><br> ~~ee ~~<br>~~es~~<br>~~es~~<br>~~ee~~|760<br>880<br> ~~ee~~<br>~~es~~<br>~~ee~~|1,000<br>1,100<br>~~es~~|mV<br>~~es~~|IC= 10mA, IB= 0.5mA<br>IC= 100mA,IB= 5.0mA<br>~~es~~|
|Base-Emitter Voltage<br>~~ee~~|VBE(on)<br>~~ee ~~<br>~~ee~~<br>~~ee~~<br>~~Gs~~|580<br> ~~es~~<br>~~ee~~<br>~~ee~~|650<br>725<br>~~ee~~<br>~~ee~~|750<br>800<br>~~ee~~|mV<br>~~ee~~|IC= 2.0mA, VCE= 5V<br>IC= 10mA,VCE= 5V<br>~~ee~~|
|Current Gain-Bandwidth Product<br>~~es~~<br>~~lm~~|fT<br>~~ee ~~<br>~~es~~<br>~~Gs~~<br>~~lm~~<br>~~eel~~|100<br> ~~ee ~~<br>~~es~~<br>~~eel~~<br>~~et~~|170<br> ~~ee~~<br>~~es~~<br>~~et~~<br>~~err~~|<br>~~es~~<br>~~errll~~|MHz<br>~~es~~<br>~~ll~~|VCE= 5V, IC = 10mA,<br>f = 100MHz<br>~~es~~|
|Collector-Base Capacitance<br>~~rrr~~<br>~~lm~~|Ccbo<br>~~Gs~~<br>~~rrr~~<br>~~lm~~<br>~~eel~~|<br>~~rrr~~<br>~~eel~~<br>~~et~~|1.5<br>~~rrr~~<br>~~et~~<br>~~err~~|<br>~~rrr~~<br>~~errll~~|pF<br>~~rrr~~<br>~~ll~~|VCB= 10V,f = 1.0MHz<br>~~rrr~~|



4 of 7 **www.diodes.com** 

DST847BDJ Document number: DS32035  Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**DST847BDJ** 

## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) 

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0.16 IB = 1.8mA IB = 2mA 450<br>0.14 | IB = 1.4mA IB = 1.6mA en_— 400 (Toec ei Tr VCE = 5V _<br>IB = 1.2mA TA = 150°C<br>0.12 eeee 350 eSFe TIS<br>0.10 Bess<6 IB = 1mA 300 CN T A  = 100°C CT<br>IB = 0.8mA<br>[EE CthTE ae INT<br>0.08 Zs I B  = 0.6mA 250 TA = 25°C coitk —Nv<br>ee CCer<br>IB = 0.4mA 200<br>0.06 a2s ASoot CPST<br>150<br>0.04 {—Ap I B  = 0.2mA SoCC TA = -55°C ecoi<br>100<br>0.02 | i | 50 SeeASoSoooTIS<br>00 Po] 1 [| 2 | 3 jo. 4 5 0 SoFcEEC<br>1 10 100<br>VCE, COLLECTOR-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA)<br>Fig. 4 Typical Collector Current  Fig. 5 Typical DC Current Gain vs. Collector Current<br>vs. Collector-Emitter Voltage<br>0.20 1<br>0.180.16 naa I C /I B  = 10 PEHe<br>0.14 eets |TAnnal<br>0.12<br>nr A ef ra<br>0.10 0 A 0.1 ll IC/IB = 100 m Wy |<br>ot oo aeel al<br>0.08 Ett T | A = 150°C i —ae I C /I B  = 50 s s<br>0.06 T A  = 100°C IC/IB = 20<br>01 on a, 740 et eT<br>0.04 SSS TA = 25°C WT IC/IB = 10 ET<br>0.02 ee T A  = -55°C<br>0 LH EEE TE 0.01<br>1 10 100 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 6 Typical Collector-Emitter Saturation Voltage Fig. 7 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>1.0 1.1<br>VCE = 5V<br>0.9 ATA EYeT 1.0 TT TT)LL<br>0.8 ica TA = -55 ° C 0.9 WE<br>0.8 T A  = -55°C<br>0.7 Tay a<br>ima SLL<br>TA = 25°C 0.7<br>0.6 HT [ae TA = 25°C oe<br>0.6<br>0.5 Tie T A = 100°C ceeb 0.5 1Tae a TA = 100 ° C eect<br>0.4 ll pitts TA = 150°C pad | 0.4 ee T A  = 150°C<br>0.3 0.3<br>1 10 100 1 10 100<br>IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)<br>Fig. 8 Typical Base-Emitter Turn-On Voltage  Fig. 9 Typical Base-Emitter Saturation Voltage<br>vs. Collector Current vs. Collector Current<br>C<br>, COLLECTOR CURRENT (A)<br>I<br>, BASE-EMITTER SATURATION VOLTAGE (V)<br>BE(SAT)<br>V<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>SATURATION<br>CE(SAT)<br>V<br>, DC CURRENT GAIN<br>h<br>FE<br>, BASE-EMITTER TURN-ON VOLTAGE (V)<br>BE(ON)<br>V<br>VOLTAGE (V)<br>, COLLECTOR-EMITTER<br>SATURATION<br>CE(SAT)<br>V<br>**----- End of picture text -----**<br>


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DST847BDJ Document number: DS32035  Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**DST847BDJ** 

## **Package Outline Dimensions** 

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 

|E<br>D<br>e1<br>e<br>E1<br>b (6 places)<br>~~al~~<br>~~am ~~|c<br>1!<br> ~~:~~|c<br>1!<br> ~~:~~|c<br>1!<br> ~~:~~|c<br>1!<br> ~~:~~|L|**Dim**<br>**A**<br>**A1**<br>**C**<br>**D**<br>**E**<br>**E1**<br>**L**<br>**b**|**SOT-963**<br>**Min**<br>**Max**<br>0.40<br>0.50<br>0<br>0.05<br>0.120<br>0.180 <br>0.95<br>1.05<br>0.95<br>1.05<br>0.75<br>0.85<br>0.05<br>0.15<br>0.10<br>0.20|**Typ**<br>0.45<br>-<br>0.150<br>1.00<br>1.00<br>0.80<br>0.10<br>0.15|
|---|---|---|---|---|---|---|---|---|
|A<br>A1<br>~~Goal~~||||||**e**<br>**e1 **<br>**All Dimensions in mm**|0.35Typ<br>0.70Typ<br>**All Dimensions in mm**||



## **Suggest Pad Layout** 

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 

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C C<br>[<br>Y1<br>Y (6X)<br>Mchad Ge<br>X (6X)<br>**----- End of picture text -----**<br>


|**Dimensions Value**|**Dimensions Value(in mm)**|
|---|---|
|**C**|0.350|
|**X**|0.200|
|**Y**|0.200|
|**Y1**|1.100|



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DST847BDJ Document number: DS32035  Rev. 2 - 2 

March 2015 © Diodes Incorporated 

**DST847BDJ** 

## **IMPORTANT NOTICE** 

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others.  Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. 

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending.  Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. 

This document is written in English but may be translated into multiple languages for reference.  Only the English version of this document is the final and determinative format released by Diodes Incorporated. 

## **LIFE SUPPORT** 

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: 

- A.   Life support devices or systems are devices or systems which: 

   1. are intended to implant into the body, or 

   2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. 

B.   A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated.  Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. 

Copyright © 2015, Diodes Incorporated 

**www.diodes.com** 

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DST847BDJ Document number: DS32035  Rev. 2 - 2 

March 2015 © Diodes Incorporated